专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08557088B2 Physical vapor deposition with phase shift 有权
标题翻译：具有相移的物理气相沉积
公开(公告)号：US08557088B2
公开(公告)日：2013-10-15
申请号：US12389241
申请日：2009-02-19
申请人： Youming Li , Jeffrey Birkmeyer , Takamichi Fujii , Takayuki Naono , Yoshikazu Hishinuma
发明人： Youming Li , Jeffrey Birkmeyer , Takamichi Fujii , Takayuki Naono , Yoshikazu Hishinuma
IPC分类号： C23C14/34
CPC分类号： C23C14/345 , H01J37/3408 , H01J37/3438 , H01J37/3444
摘要： A method of physical vapor deposition includes applying a first radio frequency signal having a first phase to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, applying a second radio frequency signal having a second phase to a chuck in the physical vapor deposition apparatus, wherein the chuck supports a substrate, and wherein a difference between the first and second phases creates a positive self bias direct current voltage on the substrate, and depositing a material from the sputtering target onto the substrate.
摘要翻译：一种物理气相沉积方法包括在物理气相沉积设备中向阴极施加具有第一相的第一射频信号，其中所述阴极包括溅射靶，将具有第二相的第二射频信号施加到卡盘中的第二相位物理气相沉积设备，其中所述卡盘支撑衬底，并且其中所述第一和第二相之间的差产生在所述衬底上的正自偏压直流电压，以及将材料从所述溅射靶沉积到所述衬底上。

2. 发明授权

US08540851B2 Physical vapor deposition with impedance matching network 有权
标题翻译：物理气相沉积与阻抗匹配网络
公开(公告)号：US08540851B2
公开(公告)日：2013-09-24
申请号：US12389253
申请日：2009-02-19
申请人： Youming Li , Jeffrey Birkmeyer , Takamichi Fujii , Takayuki Naono , Yoshikazu Hishinuma
发明人： Youming Li , Jeffrey Birkmeyer , Takamichi Fujii , Takayuki Naono , Yoshikazu Hishinuma
IPC分类号： C23C14/34 , C23C14/56
CPC分类号： C23C14/35 , C23C14/088 , C23C14/345 , H01J37/32651 , H01J37/3408 , H01J37/3444
摘要： A method of physical vapor deposition includes applying a radio frequency signal to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, electrically connecting a chuck in the physical vapor deposition apparatus to an impedance matching network, wherein the chuck supports a substrate, and wherein the impedance matching network includes at least one capacitor, and depositing material from the sputtering target onto the substrate.
摘要翻译：一种物理气相沉积方法包括在物理气相沉积设备中向阴极施加射频信号，其中阴极包括溅射靶，将物理气相沉积设备中的卡盘电连接到阻抗匹配网络，其中卡盘支撑衬底，并且其中所述阻抗匹配网络包括至少一个电容器，以及将材料从所述溅射靶材沉积到所述衬底上。

3. 发明申请

US20100206718A1 PHYSICAL VAPOR DEPOSITION WITH IMPEDANCE MATCHING NETWORK 有权
标题翻译：物理蒸汽沉积与阻抗匹配网络
公开(公告)号：US20100206718A1
公开(公告)日：2010-08-19
申请号：US12389253
申请日：2009-02-19
申请人： Youming Li , Jeffrey Birkmeyer , Takamichi Fujii , Takayuki Naono , Yoshi Hishinuma
发明人： Youming Li , Jeffrey Birkmeyer , Takamichi Fujii , Takayuki Naono , Yoshi Hishinuma
IPC分类号： C23C14/34
CPC分类号： C23C14/35 , C23C14/088 , C23C14/345 , H01J37/32651 , H01J37/3408 , H01J37/3444
摘要： A method of physical vapor deposition includes applying a radio frequency signal to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, electrically connecting a chuck in the physical vapor deposition apparatus to an impedance matching network, wherein the chuck supports a substrate, and wherein the impedance matching network includes at least one capacitor, and depositing material from the sputtering target onto the substrate.
摘要翻译：一种物理气相沉积方法包括在物理气相沉积设备中向阴极施加射频信号，其中阴极包括溅射靶，将物理气相沉积设备中的卡盘电连接到阻抗匹配网络，其中卡盘支撑衬底，并且其中所述阻抗匹配网络包括至少一个电容器，以及将材料从所述溅射靶材沉积到所述衬底上。

4. 发明申请

US20100206714A1 PHYSICAL VAPOR DEPOSITION WITH PHASE SHIFT 有权
标题翻译：物理蒸气沉积与相移
公开(公告)号：US20100206714A1
公开(公告)日：2010-08-19
申请号：US12389241
申请日：2009-02-19
申请人： Youming Li , Jeffrey Birkmeyer , Takamichi Fujii , Takayuki Naono , Yoshi Hishinuma
发明人： Youming Li , Jeffrey Birkmeyer , Takamichi Fujii , Takayuki Naono , Yoshi Hishinuma
IPC分类号： C23C14/34
CPC分类号： C23C14/345 , H01J37/3408 , H01J37/3438 , H01J37/3444
摘要： A method of physical vapor deposition includes applying a first radio frequency signal having a first phase to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, applying a second radio frequency signal having a second phase to a chuck in the physical vapor deposition apparatus, wherein the chuck supports a substrate, and wherein a difference between the first and second phases creates a positive self bias direct current voltage on the substrate, and depositing a material from the sputtering target onto the substrate.
摘要翻译：一种物理气相沉积方法包括在物理气相沉积设备中向阴极施加具有第一相的第一射频信号，其中所述阴极包括溅射靶，将具有第二相的第二射频信号施加到卡盘中的第二相位物理气相沉积设备，其中所述卡盘支撑衬底，并且其中所述第一和第二相之间的差产生在所述衬底上的正自偏压直流电压，以及将材料从所述溅射靶沉积到所述衬底上。

5. 发明申请

US20100147681A1 CHAMBER SHIELD FOR VACUUM PHYSICAL VAPOR DEPOSITION 有权
标题翻译：真空真空蒸发沉积室
公开(公告)号：US20100147681A1
公开(公告)日：2010-06-17
申请号：US12334279
申请日：2008-12-12
申请人： Youming Li , Jeffrey Birkmeyer
发明人： Youming Li , Jeffrey Birkmeyer
IPC分类号： C23C14/35
CPC分类号： C23C14/35 , H01J37/32623 , H01J37/34
摘要： A physical vapor deposition apparatus includes a vacuum chamber with side walls, a cathode, a radio frequency power supply, a substrate support, and anode, and a shield. The cathode is inside the vacuum chamber and includes a sputtering target. The radio frequency power supply is configured to apply power to the cathode. The substrate support is inside and electrically isolated from the side walls of the vacuum chamber. The anode is inside and electrically connected to the side walls of the vacuum chamber. The shield is inside and electrically connected to the side walls of the vacuum chamber and includes an annular body and a plurality of concentric annular projections extending from the annular body.
摘要翻译：物理气相沉积装置包括具有侧壁的真空室，阴极，射频电源，基板支撑件和阳极以及屏蔽件。阴极在真空室内，并包括溅射靶。射频电源被配置为向阴极施加电力。衬底支撑件与真空室的侧壁在内部并与之电隔离。阳极在真空室的侧壁内部并电连接。屏蔽体内部并电连接到真空室的侧壁，并且包括环形体和从环形体延伸的多个同心的环形突起。

6. 发明授权

US09085152B2 Etching piezoelectric material 有权
标题翻译：蚀刻压电材料
公开(公告)号：US09085152B2
公开(公告)日：2015-07-21
申请号：US12991901
申请日：2009-05-12
申请人： Jeffrey Birkmeyer , Youming Li
发明人： Jeffrey Birkmeyer , Youming Li
IPC分类号： C23F1/12 , B41J2/16 , H01L21/311 , H01L41/332
CPC分类号： B41J2/161 , B41J2/1623 , B41J2/1628 , B41J2/1629 , B41J2/1632 , B41J2/1646 , H01L21/31138 , H01L41/332 , Y10T428/24802 , Y10T428/24917
摘要： Piezoelectric material is shaped by plasma etching to form deep features with high aspect ratios, and desired geometries.
摘要翻译：压电材料通过等离子体蚀刻成形，以形成具有高纵横比和所需几何形状的深度特征。

7. 发明申请

US20130284589A1 RADIO FREQUENCY TUNED SUBSTRATE BIASED PHYSICAL VAPOR DEPOSITION APPARATUS AND METHOD OF OPERATION 审中-公开
标题翻译：无线电频率调谐基板偏置物理蒸气沉积装置和操作方法
公开(公告)号：US20130284589A1
公开(公告)日：2013-10-31
申请号：US13460332
申请日：2012-04-30
申请人： Youming Li , Jeffrey Birkmeyer
发明人： Youming Li , Jeffrey Birkmeyer
IPC分类号： C23C14/34
CPC分类号： C23C14/345 , C23C14/35 , H01J37/32183 , H01J37/32651 , H01J37/3444
摘要： A method of physical vapor deposition includes applying a radio frequency signal to a cathode in a physical vapor deposition apparatus, wherein the cathode includes a sputtering target, electrically connecting a chuck in the physical vapor deposition apparatus to an impedance matching network, wherein the chuck supports a substrate, and wherein the impedance matching network includes at least one capacitor, and depositing material from the sputtering target onto the substrate.
摘要翻译：一种物理气相沉积方法包括在物理气相沉积设备中向阴极施加射频信号，其中阴极包括溅射靶，将物理气相沉积设备中的卡盘电连接到阻抗匹配网络，其中卡盘支撑衬底，并且其中所述阻抗匹配网络包括至少一个电容器，以及将材料从所述溅射靶材沉积到所述衬底上。

8. 发明申请

US20100147680A1 SHAPED ANODE AND ANODE-SHIELD CONNECTION FOR VACUUM PHYSICAL VAPOR DEPOSITION 有权
标题翻译：用于真空真空蒸发沉积的形状阳极和阳极屏蔽连接
公开(公告)号：US20100147680A1
公开(公告)日：2010-06-17
申请号：US12334253
申请日：2008-12-12
申请人： Youming Li , Jeffrey Birkmeyer
发明人： Youming Li , Jeffrey Birkmeyer
IPC分类号： C23C14/35
CPC分类号： C23C14/08 , C23C14/35 , H01J37/3408 , H01J37/3438 , H01J37/3447
摘要： A physical vapor deposition apparatus includes a vacuum chamber with side walls, a cathode, a radio frequency power supply, a substrate support, a shield, and an anode. The cathode is inside the vacuum chamber, and the cathode includes a sputtering target. The radio frequency power supply is configured to apply power to the cathode. The substrate support is inside and electrically isolated from the side walls of the vacuum chamber. The shield is inside and electrically connected to the side walls of the vacuum chamber. The anode is inside and electrically connected to the side walls of the vacuum chamber. The anode includes an annular body and an annular flange projecting inwardly from the annular body, and the annular flange is positioned to define a volume below the target for the generation of plasma.
摘要翻译：物理气相沉积装置包括具有侧壁的真空室，阴极，射频电源，基板支撑件，屏蔽件和阳极。阴极在真空室内，阴极包括溅射靶。射频电源被配置为向阴极施加电力。衬底支撑件与真空室的侧壁在内部并与之电隔离。屏蔽层内部并电连接到真空室的侧壁。阳极在真空室的侧壁内部并电连接。阳极包括环形体和从环形体向内突出的环形凸缘，并且环形凸缘被定位成限定靶下方的体积以产生等离子体。

9. 发明授权

US10442195B2 Piezoelectric device and method for manufacturing an inkjet head 有权
公开(公告)号：US10442195B2
公开(公告)日：2019-10-15
申请号：US15630590
申请日：2017-06-22
申请人： Yoshikazu Hishinuma , Shinya Sugimoto , Youming Li , Christoph Menzel , Mats G. Ottoson , Darren Imai
发明人： Yoshikazu Hishinuma , Shinya Sugimoto , Youming Li , Christoph Menzel , Mats G. Ottoson , Darren Imai
IPC分类号： B41J2/14 , B41J2/145 , B41J2/16 , H01L41/312 , H01L41/047 , H01L41/293 , H01L41/297
摘要： A piezoelectric device and method of manufacturing the same and an inkjet head are described. In one embodiment, the inkjet print head comprises a plurality of jets, wherein each of the plurality of jets comprises a nozzle, a pressure chamber connected with the nozzle, a piezoelectric body coupled to the pressure chamber, and an electrode coupled to the piezoelectric body to cause displacement of the piezoelectric body to apply pressure to the pressure chamber in response to a voltage applied to the electrode; and wherein electrodes of two or more of the plurality of jets have different sizes to cause their associated piezoelectric bodies to have a uniform displacement amount when the voltage is applied to the electrodes.

10. 发明申请

US20180370234A1 PIEZOELECTRIC DEVICE AND METHOD FOR MANUFACTURING AN INKJET HEAD 审中-公开
公开(公告)号：US20180370234A1
公开(公告)日：2018-12-27
申请号：US15630590
申请日：2017-06-22
申请人： Yoshikazu Hishinuma , Shinya Sugimoto , Youming Li , Christoph Menzel , Mats G. Ottoson , Darren Imai
发明人： Yoshikazu Hishinuma , Shinya Sugimoto , Youming Li , Christoph Menzel , Mats G. Ottoson , Darren Imai
IPC分类号： B41J2/14 , B41J2/145 , B41J2/16 , H01L41/047 , H01L41/293 , H01L41/297 , H01L41/312
CPC分类号： B41J2/14201 , B41J2/14233 , B41J2/145 , B41J2/1607 , B41J2/161 , B41J2/1628 , B41J2/1631 , B41J2/1642 , B41J2/1646 , B41J2002/14266 , B41J2002/14459 , B41J2002/14491 , H01L41/047 , H01L41/0472 , H01L41/29 , H01L41/293 , H01L41/297 , H01L41/312
摘要： A piezoelectric device and method of manufacturing the same and an inkjet head are described. In one embodiment, the inkjet print head comprises a plurality of jets, wherein each of the plurality of jets comprises a nozzle, a pressure chamber connected with the nozzle, a piezoelectric body coupled to the pressure chamber, and an electrode coupled to the piezoelectric body to cause displacement of the piezoelectric body to apply pressure to the pressure chamber in response to a voltage applied to the electrode; and wherein electrodes of two or more of the plurality of jets have different sizes to cause their associated piezoelectric bodies to have a uniform displacement amount when the voltage is applied to the electrodes.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式