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41. 发明授权

US06946637B2 Image sensing device using MOS type image sensing elements 失效
标题翻译：图像感测器件采用MOS型摄像元件
公开(公告)号：US06946637B2
公开(公告)日：2005-09-20
申请号：US10680181
申请日：2003-10-08
申请人： Tetsunobu Kochi , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Tetsunobu Kochi , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H01L27/146 , H04N5/355 , H04N5/363 , H04N5/365 , H04N5/374 , H04N5/3745 , H01J40/14
CPC分类号： H04N5/37452 , H01L27/14609 , H01L27/14643 , H04N5/3559 , H04N5/363 , H04N5/365 , H04N5/374 , H04N5/3741
摘要： In a photoelectric conversion device having a plurality of pixel cells each of which includes a photoelectric conversion element, a field effect transistor having the gate area for storing signal charge generated by the photoelectric conversion element and the source-drain path for outputting a signal corresponding to the signal charge stored in the gate, a first power supply line for supplying electric power to the field effect transistor, and a first switch connected between the field effect transistor and the first power supply line, when a reset voltage for resetting the gate of the field effect transistor is Vsig0, a threshold voltage of the field effect transistor is Vth, current flowing through the field effect transistor is Ia, a voltage applied via the first power supply line is Vc1, and a series resistance of the first switch is Ron, each pixel cell is configured to satisfy a condition determined by Vc1−Ron×Ia>Vsig0−Vth.
摘要翻译：在具有包括光电转换元件的多个像素单元的光电转换装置中，具有用于存储由光电转换元件生成的信号电荷的栅极区域的场效应晶体管和用于输出与光电转换元件对应的信号的源极 - 漏极路径存储在栅极中的信号电荷，用于向场效应晶体管提供电力的第一电源线和连接在场效应晶体管和第一电源线之间的第一开关，当用于复位栅极的复位电压场效应晶体管是V Sig0 ，场效应晶体管的阈值电压为V th，则流过场效应晶体管的电流为I / ，经由第一电源线施加的电压为V C1，并且第一开关的串联电阻为R＆lt;＆lt;＆gt;，每个像素单元被配置为满足所确定的条件通过V c1 <！ - SIPO

42. 发明授权

US06946636B2 Image pickup apparatus providing a bias between different pixel areas during signal accumulation 有权
标题翻译：图像拾取装置在信号累积期间提供不同像素区域之间的偏置
公开(公告)号：US06946636B2
公开(公告)日：2005-09-20
申请号：US09790601
申请日：2001-02-23
申请人： Tomoko Eguchi , Toru Koizumi , Katsuhito Sakurai , Fumihiro Inui , Hiroki Hiyama , Masaru Fujimura
发明人： Tomoko Eguchi , Toru Koizumi , Katsuhito Sakurai , Fumihiro Inui , Hiroki Hiyama , Masaru Fujimura
IPC分类号： H01L27/146 , H04N5/335 , H04N5/365 , H04N5/374 , H04N5/3745 , H04N5/378 , H01L27/00 , H01L31/00
CPC分类号： H04N5/365 , H01L27/14609
摘要： In order to reduce the noise in the readout signal, the invention provides an image pickup apparatus comprising a pixel including a photoelectric conversion unit for converting the incident light and accumulating a resulting electrical signal, and a transfer switch reading the electrical signal accumulated in the photoelectric conversion unit or a signal based on such electrical signal, and potential control means for maintaining the potential of the signal line higher than that of the photoelectric conversion unit while the photoelectric conversion unit accumulates the electrical signal.
摘要翻译：为了降低读出信号中的噪声，本发明提供了一种图像拾取装置，包括：像素，包括用于转换入射光并累积所得到的电信号的光电转换单元;以及读取在光电中累积的电信号的转移开关转换单元或基于这种电信号的信号，以及电位控制装置，用于在光电转换单元累积电信号的同时保持信号线的电位高于光电转换单元的电位。

43. 发明申请

US20050185074A1 Solid-state imaging device 失效
标题翻译：固态成像装置
公开(公告)号：US20050185074A1
公开(公告)日：2005-08-25
申请号：US11104538
申请日：2005-04-13
申请人： Tomoya Yoneda , Shigetoshi Sugawa , Toru Koizumi , Tetsunobu Kochi
发明人： Tomoya Yoneda , Shigetoshi Sugawa , Toru Koizumi , Tetsunobu Kochi
IPC分类号： H01L27/146 , H01L27/148 , H04N1/195 , H04N5/335 , H04N5/361 , H04N5/369 , H04N5/374 , H04N9/07
CPC分类号： H04N1/195 , H01L27/14603 , H01L27/14609 , H01L27/14623 , H01L27/14643
摘要： To control the potential distribution generated in a well at the time of amplification and reduce a shading in a solid-state imaging device of amplification type, the amplification type solid-state imaging device of the present invention comprises a plurality of picture elements each including photoelectric conversion elements formed in a second conductivity type common well inside a first conductivity type substrate, wherein a plurality of well contacts are disposed inside a picture element array area.
摘要翻译：为了控制放大时在阱中产生的电位分布并减小放大型固态成像装置中的阴影，本发明的放大型固态成像装置包括多个图像元素，每个图像元素包括光电形成在第一导电型衬底内的第二导电类型共同阱中的转换元件，其中多个阱触点设置在像素阵列区域内。

44. 发明授权

US06898310B1 Image signal processing method, image signal processing system, storage medium, and image sensing apparatus 有权
标题翻译：图像信号处理方法，图像信号处理系统，存储介质和图像感测装置
公开(公告)号：US06898310B1
公开(公告)日：2005-05-24
申请号：US09343186
申请日：1999-06-30
申请人： Tadahiro Ohmi , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Tetsunobu Kochi , Katsuhito Sakurai , Takahiro Nakayama , Tatsuo Morimoto
发明人： Tadahiro Ohmi , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Tetsunobu Kochi , Katsuhito Sakurai , Takahiro Nakayama , Tatsuo Morimoto
IPC分类号： H04N5/225 , H04N1/41 , H04N1/60 , H04N1/64 , H04N9/04 , H04N9/64 , H04N9/69 , H04N9/73 , H04N9/804 , H04N9/808 , H04N11/04 , G06K9/00
CPC分类号： H04N1/60 , H04N1/64 , H04N9/643
摘要： An image signal processing method and system, which can greatly reduce the data size upon transmitting an image signal or storing the signal in a storage medium, and can obtain a high-quality image by preventing image quality after color processing from deteriorating. According to the method for processing an image signal output from an image sensing element, a compression step of compressing the image signal and an expansion step of expanding the compressed image signal are executed without executing color processing for executing at least white balance correction or correction, and the color processing is executed after completion of the compression and expansion steps, thereby preventing occurrence of block noise and high-frequency noise associated with compressing/expanding image data after the color processing of the image signal.
摘要翻译：一种图像信号处理方法和系统，其可以在发送图像信号或将信号存储在存储介质中时大大减少数据大小，并且可以通过防止颜色处理之后的图像质量劣化而获得高质量图像。根据用于处理从图像感测元件输出的图像信号的方法，执行压缩图像信号的压缩步骤和扩展压缩图像信号的扩展步骤，而不执行至少执行白平衡校正或y校正的颜色处理，并且在完成压缩和扩展步骤之后执行颜色处理，从而防止在图像信号的颜色处理之后发生与压缩/扩大图像数据相关联的块噪声和高频噪声。

45. 发明授权

US06839084B1 Image pickup apparatus capable of switching modes based on signals from photoelectric conversion pixels 有权
标题翻译：能够根据来自光电转换像素的信号切换模式的摄像装置
公开(公告)号：US06839084B1
公开(公告)日：2005-01-04
申请号：US09333748
申请日：1999-06-16
申请人： Hiroki Hiyama , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Tetsunobu Kochi , Katsuhito Sakurai
发明人： Hiroki Hiyama , Shigetoshi Sugawa , Isamu Ueno , Katsuhisa Ogawa , Toru Koizumi , Tetsunobu Kochi , Katsuhito Sakurai
IPC分类号： H04N1/028 , H04N5/232 , H04N5/335 , H04N5/341 , H04N5/353 , H04N5/357 , H04N5/369 , H04N5/374 , H04N5/378 , H04N5/77 , H04N5/907 , H04N3/14 , H04N5/217
CPC分类号： H04N5/3575 , H04N5/23212 , H04N5/23245 , H04N5/772 , H04N5/907
摘要： In order to select an image pickup mode corresponding to purposes, there is provided a photoelectric conversion device comprising a plurality of photoelectric conversion pixels; and a control circuit for controlling a first mode for reading out first and second signals from each of the photoelectric conversion pixels, and a second mode for reading out the first signal from each of the photoelectric conversion pixels, wherein the first signal includes a noise signal produced upon resetting each of the photoelectric conversion pixels, and an optical signal produced by accumulating a photocharge, and the second signal includes a noise signal produced upon resetting each of the photoelectric conversion pixels.
摘要翻译：为了选择对应于目的的图像拾取模式，提供了包括多个光电转换像素的光电转换装置; 以及控制电路，用于控制用于从每个光电转换像素读出第一和第二信号的第一模式，以及用于从每个光电转换像素读出第一信号的第二模式，其中第一信号包括噪声信号在复位每个光电转换像素时产生的光信号和通过累积光电荷产生的光信号，并且第二信号包括在复位每个光电转换像素时产生的噪声信号。

46. 发明授权

US06661459B1 Solid state image pickup device with LDD structure and reset transistor 有权
标题翻译：具有LDD结构和复位晶体管的固态图像拾取器件
公开(公告)号：US06661459B1
公开(公告)日：2003-12-09
申请号：US09271887
申请日：1999-03-18
申请人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
发明人： Toru Koizumi , Shigetoshi Sugawa , Isamu Ueno , Tesunobu Kochi , Katsuhito Sakurai , Hiroki Hiyama
IPC分类号： H04N314
CPC分类号： H01L27/14806 , H01L27/14609 , H01L27/14643 , H01L27/14689 , H01L31/035281 , Y02E10/50
摘要： In a solid state image pickup device, in order to form a bypass region with precisely controlled impurity concentration and width, there is provided a solid state image pickup device comprising a photoelectric conversion unit composed of a first region of a first conductive type formed on a semiconductor substrate and having a principal surface, a second region of a second conductive type formed in the first region, and a third region of the first conductive type present between the second region and the principal surface, a fourth region of the second conductive type formed in the first region, and a charge transfer unit including the first region, an insulation layer on the first region and a control electrode provided on the insulation layer, for transferring a signal charge accumulated in the photoelectric conversion unit, to the fourth region, wherein the photoelectric conversion unit and the charge transfer unit are connected through a fifth region of the second conductive type.
摘要翻译：在固态图像拾取装置中，为了形成具有精确控制的杂质浓度和宽度的旁路区域，提供了一种固态图像拾取装置，其包括光电转换单元，该光电转换单元由形成在第一导电类型的第一导电类型的第一区域半导体基板，具有主表面，形成在第一区域中的第二导电类型的第二区域和存在于第二区域和主表面之间的第一导电类型的第三区域，形成第二导电类型的第四区域在所述第一区域中，以及电荷转移单元，所述电荷转移单元包括所述第一区域，所述第一区域上的绝缘层和设置在所述绝缘层上的控制电极，用于将累积在所述光电转换单元中的信号电荷转移到所述第四区域，其中光电转换单元和电荷转移单元通过第二导电类型的第五区连接。

47. 发明授权

US06178302B1 Developer container seal, developer container, developing apparatus, process cartridge, and image forming apparatus 有权
标题翻译：显影剂容器密封，显影剂容器，显影装置，处理盒和成像装置
公开(公告)号：US06178302B1
公开(公告)日：2001-01-23
申请号：US09207025
申请日：1998-12-08
申请人： Toshiaki Nagashima , Teruhiko Sasaki , Kazuo Chadani , Toru Koizumi
发明人： Toshiaki Nagashima , Teruhiko Sasaki , Kazuo Chadani , Toru Koizumi
IPC分类号： G03G1508
CPC分类号： G03G21/1832 , G03G15/0896 , G03G21/1875 , G03G2215/088 , G03G2221/1648 , G03G2221/1663 , G03G2221/183
摘要： A seal member for sealing an opening of a developer accommodating container for accommodating a developer, which developer accommodating container is detachably mountable to a main assembly of an image forming apparatus, includes a seal base for sealing the opening; a force receiving portion for receiving a force for unsealing the seal base; an electroconductive portion capable of being disconnected by an unsealing operation of the seal base, the electroconductive portion including a contact portion electrically connectable with a contact portion of the main assembly of the image forming apparatus to permit the main assembly of the image forming apparatus to detect whether the electroconductive portion is disconnected or not.
摘要翻译：一种用于密封用于容纳显影剂的显影剂容纳容器的开口的密封构件，该显影剂容纳容器可拆卸地安装到图像形成装置的主组件上，包括用于密封开口的密封基座; 用于接收用于开封密封基座的力的力接收部分; 能够通过密封基座的开封操作而断开的导电部分，导电部分包括与图像形成设备的主组件的接触部分可电连接的接触部分，以允许图像形成设备的主组件检测导电部分是否断开。

48. 发明授权

US5827755A Liquid crystal image display unit and method for fabricating semiconductor optical member 失效
公开(公告)号：US5827755A
公开(公告)日：1998-10-27
申请号：US517903
申请日：1995-08-22
申请人： Takao Yonehara , Mamoru Miyawaki , Akira Ishizaki , Junichi Hoshi , Masaru Sakamoto , Shigetoshi Sugawa , Shunsuke Inoue , Toru Koizumi , Tetsunobu Kohchi , Kiyofumi Sakaguchi , Takanori Watanabe
发明人： Takao Yonehara , Mamoru Miyawaki , Akira Ishizaki , Junichi Hoshi , Masaru Sakamoto , Shigetoshi Sugawa , Shunsuke Inoue , Toru Koizumi , Tetsunobu Kohchi , Kiyofumi Sakaguchi , Takanori Watanabe
IPC分类号： G02F1/1362 , H01L27/12 , H01L21/00 , H01L21/301 , H01L21/76
CPC分类号： G02F1/13454 , H01L27/12 , H01L27/1203 , H01L27/1233 , G02F2001/136281 , G02F2202/105 , Y10S438/96
摘要： A liquid crystal image display unit created on a substrate non-transparent to the light in the visible radiation area, characterized in that a portion beneath a liquid crystal pixel part on said substrate is removed, so that the light is made transmissive through said liquid crystal pixel part.

49. 发明授权

US5661329A Semiconductor integrated circuit device including an improved separating groove arrangement 失效
标题翻译：半导体集成电路器件包括改进的分离槽布置
公开(公告)号：US5661329A
公开(公告)日：1997-08-26
申请号：US350944
申请日：1994-12-07
申请人： Toshiro Hiramoto , Nobuo Tamba , Masami Usami , Takahide Ikeda , Kazuo Tanaka , Atsuo Watanabe , Satoru Isomura , Toshiyuki Kikuchi , Toru Koizumi
发明人： Toshiro Hiramoto , Nobuo Tamba , Masami Usami , Takahide Ikeda , Kazuo Tanaka , Atsuo Watanabe , Satoru Isomura , Toshiyuki Kikuchi , Toru Koizumi
IPC分类号： H01L21/84 , H01L27/12 , H01L29/10 , H01L29/00 , H01L27/01
CPC分类号： H01L27/1203 , H01L21/84 , H01L29/1079
摘要： A semiconductor integrated circuit device includes an element separating first and second grooves formed to surround active regions to be formed with a semiconductor element. In addition a third groove is formed to surround at least a portion of the first groove, when viewed from a plane view. In the semiconductor integrated circuit device, the active regions and an element separating region of a silicon layer are insulated from each other by the separating grooves extending from the main surface of the silicon layer to an underlying insulating layer, and are fed with a common fixed potential.
摘要翻译：半导体集成电路器件包括分离形成为围绕要形成半导体元件的有源区的第一和第二沟槽的元件。此外，当从平面视图观察时，形成第三凹槽以围绕第一凹槽的至少一部分。在半导体集成电路器件中，硅层的有源区域和元件分离区域通过从硅层的主表面延伸到下面的绝缘层的分离槽彼此绝缘，并且被馈送有公共固定潜在。

50. 发明授权

US5475244A MIS transistor having second conductivity type source and drain regions sandwiching a channel region of a first conductivity type of a first semiconductor material formed on an insulating substrate, and a gate electrode formed on a main surface 失效
标题翻译： MIS晶体管具有第二导电类型的源极和漏极区域，其夹着形成在绝缘基板上的第一半导体材料的第一导电类型的沟道区域和形成在沟道区域的主表面上的栅电极
公开(公告)号：US5475244A
公开(公告)日：1995-12-12
申请号：US37681
申请日：1993-03-24
申请人： Toru Koizumi , Hidemasa Mizutani , Masakazu Morishita
发明人： Toru Koizumi , Hidemasa Mizutani , Masakazu Morishita
IPC分类号： H01L27/12 , H01L21/336 , H01L29/78 , H01L29/786 , H01L31/072 , H01L27/01 , H01L29/04 , H01L31/117
CPC分类号： H01L29/66772 , H01L29/78618 , H01L29/78621
摘要： An MIS transistor has a channel portion of a first conduction type of first semiconductor material formed on an insulating substrate, second conduction type source and drain regions sandwiching said channel portion therebetween, and a gate electrode formed on a main surface of the channel portion with an insulating film therebetween, wherein the source region is made of the first semiconductor material and a second semiconductor material having an energy band gap smaller than that of the first semiconductor material and a heterojunction between the first and second semiconductor materials is provided outside of a depletion layer region formed in the junction between the source and channel portions, and inside a diffusion length L.sub.d from a depletion edge.
摘要翻译： MIS晶体管具有形成在绝缘基板上的第一导电类型的第一半导体材料的沟道部分，夹在其间的所述沟道部分的第二导电型源极和漏极区域，以及形成在沟道部分的主表面上的栅电极，其间源区域由第一半导体材料制成，第二半导体材料的能带隙小于第一半导体材料的能带隙，第一和第二半导体材料之间的异质结设置在耗尽层的外侧在源极和沟道部分之间的接合处形成的区域，以及从耗尽边缘的扩散长度Ld内部。

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