专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

41. 发明授权

US08839916B2 Control method for parking release apparatus of shift-by-wire shifting device 有权
标题翻译：线移线装置停车解除装置的控制方法
公开(公告)号：US08839916B2
公开(公告)日：2014-09-23
申请号：US13285539
申请日：2011-10-31
申请人： Hangil Park , Changhyun Lee
发明人： Hangil Park , Changhyun Lee
IPC分类号： F16D66/00 , B60T7/12 , B60T13/74
CPC分类号： B60T7/12 , B60T13/746 , Y10T477/6437 , Y10T477/644 , Y10T477/853
摘要： A control method for a parking release apparatus of a shift-by-wire shifting device can improve the commercial value of a vehicle by improving safety of the vehicle and preventing robbery, by interfering with or preventing an attempt of abnormally and manually releasing a parking state of the vehicle when there is no problem in the electric system of the vehicle, using a part provided to be manually operated in the parking release apparatus such that a P-stage state and an N-stage state can be manually switched when a problem, such as discharge, occurs in the electric system, in the vehicle equipped with a shift by wire apparatus.
摘要翻译：线移线装置的停车解除装置的控制方法可以通过提高车辆的安全性和防止抢劫，通过干扰或防止异常地和手动地解除停车状态的尝试来提高车辆的商业价值在车辆的电气系统中没有问题的情况下，使用在停车解除装置中手动操作的部件，使得当出现问题时可以手动切换P级状态和N级状态，例如放电，发生在电气系统中，在配备有有线装置的换档的车辆中。

42. 发明申请

US20140254271A1 Nonvolatile Memory Device and Read Method Thereof 有权
标题翻译：非易失性存储器件及其读取方法
公开(公告)号：US20140254271A1
公开(公告)日：2014-09-11
申请号：US14280920
申请日：2014-05-19
申请人： Changhyun Lee , Jungdal Choi , Byeong-In Choe
发明人： Changhyun Lee , Jungdal Choi , Byeong-In Choe
IPC分类号： G11C16/34 , G11C16/26
CPC分类号： G11C16/26 , G11C8/10 , G11C11/5628 , G11C11/5642 , G11C16/0483 , G11C16/10 , G11C16/3418 , G11C16/3436 , G11C16/3454 , G11C16/3459 , G11C29/00
摘要： A nonvolatile memory device has improved reliability by compensating a threshold voltage of a flash memory cell. A nonvolatile memory device includes a memory cell array and a voltage generator for supplying a select read voltage to a select word line and an unselect read voltage to unselected word lines when a read operation is performed, and supplying a verify voltage to a select word line and the unselect read voltage to unselected word lines when a program operation is performed. The voltage generator supplies a first unselect read voltage to at least one between an upper word line and a lower word line adjacent to the select word line when the program operation is performed, and supplies a second unselected read voltage to at least one between the upper word line and the lower word line adjacent to the select word line when the read operation is performed.
摘要翻译：非易失性存储器件通过补偿闪存单元的阈值电压而提高了可靠性。非易失性存储器件包括：存储单元阵列和电压发生器，用于在执行读取操作时将选择读取电压提供给选择字线，并将未选择读取电压提供给未选择的字线;以及将验证电压提供给选择字线以及当执行编程操作时，对未选字线的取消选择读取电压。电压发生器在执行编程操作时将第一未读选择电压提供给与选择字线相邻的上字线和下字线之间的至少一个，并且将第二未选择读电压提供给上当执行读操作时，字线和与选择字线相邻的下字线。

43. 发明授权

US08644064B2 Memory semiconductor device and method of operating the same 有权
标题翻译：存储器半导体器件及其操作方法
公开(公告)号：US08644064B2
公开(公告)日：2014-02-04
申请号：US13107206
申请日：2011-05-13
申请人： Byungkyu Cho , Changhyun Lee , Sunghoi Hur
发明人： Byungkyu Cho , Changhyun Lee , Sunghoi Hur
IPC分类号： G11C16/04
CPC分类号： G11C16/3427 , G11C16/0483 , G11C16/26
摘要： In a read step or a program (write) verification step of a semiconductor memory device, read voltages different from one another are applied to a pair of word lines respectively disposed on both sides of a selected word line to suppress the enlargement of program distribution.
摘要翻译：在半导体存储器件的读取步骤或程序（写入）验证步骤中，彼此不同的读取电压被施加到分别设置在所选字线的两侧上的一对字线，以抑制程序分配的扩大。

44. 发明申请

US20140016408A1 NONVOLATILE MEMORY DEVICES HAVING VERTICALLY INTEGRATED NONVOLATILE MEMORY CELL SUB-STRINGS THEREIN 有权
标题翻译：具有垂直集成非易失性存储单元子带的非易失性存储器件
公开(公告)号：US20140016408A1
公开(公告)日：2014-01-16
申请号：US14024844
申请日：2013-09-12
申请人： Changhyun Lee , Sunil Shim , Jaehoon Jang , Sunghoi Hur , Hansoo Kim , Kihyun Kim
发明人： Changhyun Lee , Sunil Shim , Jaehoon Jang , Sunghoi Hur , Hansoo Kim , Kihyun Kim
IPC分类号： G11C16/28
CPC分类号： G11C16/28 , G11C16/14 , H01L27/11551 , H01L27/11556 , H01L27/11578 , H01L29/7889 , H01L29/7926
摘要： Nonvolatile memory devices according to embodiments of the invention include highly integrated vertical stacks of nonvolatile memory cells. These vertical stacks of memory cells can utilize dummy memory cells to compensate for process artifacts that would otherwise yield relatively poor functioning memory cell strings when relatively large numbers of memory cells are stacked vertically on a semiconductor substrate using a plurality of vertical sub-strings electrically connected in series.
摘要翻译：根据本发明的实施例的非易失性存储器件包括高度集成的非易失性存储器单元的垂直堆叠。这些垂直堆叠的存储器单元可以利用虚拟存储器单元来补偿当相对大量的存储单元垂直地堆叠在半导体衬底上时使用电连接的多个垂直子串的过程伪像，否则会产生相对较差的功能性存储单元串系列。

45. 发明授权

US08408088B2 Apparatus for removing parking state of shift-by-wire shifting device 有权
标题翻译：用于消除换档换档装置停车状态的装置
公开(公告)号：US08408088B2
公开(公告)日：2013-04-02
申请号：US12880926
申请日：2010-09-13
申请人： Hangil Park , Changhyun Lee , Jeongho Park
发明人： Hangil Park , Changhyun Lee , Jeongho Park
IPC分类号： B60K20/00 , G05G5/00
CPC分类号： F16H63/3466 , Y10T74/2003 , Y10T74/20049 , Y10T74/20085 , Y10T74/20098 , Y10T74/20402 , Y10T74/20408 , Y10T74/2045 , Y10T74/20462 , Y10T74/2186
摘要： An apparatus for releasing a parking state of a shift-by-wire shifting device may include a housing fixed to a vehicle body, a driving screw rotatably coupled to the housing and threaded, a slider engaged to the driving screw and slidable along the driving screw, and a cable connected to the slider and transmitting a sliding motion of the slider to a transmission.
摘要翻译：用于释放换档换档装置的停车状态的装置可以包括固定到车体的壳体，可旋转地联接到壳体并带螺纹的驱动螺杆，与驱动螺杆接合并可沿着驱动螺杆滑动的滑块以及连接到滑块并将滑块的滑动运动传递到传输装置的电缆。

46. 发明申请

US20120081959A1 MEMORY SYSTEM AND PROGRAMMING METHOD THEREOF 有权
标题翻译：记忆系统及其编程方法
公开(公告)号：US20120081959A1
公开(公告)日：2012-04-05
申请号：US13272879
申请日：2011-10-13
申请人： Changhyun Lee , Jungdal Choi , Byeong-In Choe
发明人： Changhyun Lee , Jungdal Choi , Byeong-In Choe
IPC分类号： G11C16/10 , G11C16/06 , G11C16/04
CPC分类号： G11C11/5642 , G11C16/0483 , G11C16/26 , G11C16/3454
摘要： Provided are a non-volatile memory system and a programming method thereof. The programming method of the non-volatile memory system includes adjusting a program-verify-voltage of a selected memory cell referring to program data to be written in an interfering cell configured to provide interference for the selected memory cell and programming the selected memory cell depending on the adjusted program-verify-voltage.
摘要翻译：提供了一种非易失性存储器系统及其编程方法。非易失性存储器系统的编程方法包括：参考要写入被配置为为所选存储器单元提供干扰的干扰单元的程序数据来调整所选择的存储器单元的编程验证电压，并根据调整后的程序验证电压。

47. 发明申请

US20120003800A1 Methods of Forming Nonvolatile Memory Devices Having Vertically Integrated Nonvolatile Memory Cell Sub-Strings Therein and Nonvolatile Memory Devices Formed Thereby 有权
标题翻译：形成具有垂直集成的非易失性存储器单元子串的非易失性存储器件的方法及其形成的非易失性存储器件
公开(公告)号：US20120003800A1
公开(公告)日：2012-01-05
申请号：US13165576
申请日：2011-06-21
申请人： Changhyun Lee , Sunil Shim , Jaehoon Jang , Sunghoi Hur , Hansoo Kim , Kihyun Kim
发明人： Changhyun Lee , Sunil Shim , Jaehoon Jang , Sunghoi Hur , Hansoo Kim , Kihyun Kim
IPC分类号： H01L21/8239
CPC分类号： G11C16/28 , G11C16/14 , H01L27/11551 , H01L27/11556 , H01L27/11578 , H01L29/7889 , H01L29/7926
摘要： Methods of forming nonvolatile memory devices according to embodiments of the invention include techniques to form highly integrated vertical stacks of nonvolatile memory cells. These vertical stacks of memory cells can utilize dummy memory cells to compensate for process artifacts that would otherwise yield relatively poor functioning memory cell strings when relatively large numbers of memory cells are stacked vertically on a semiconductor substrate using a plurality of vertical sub-strings electrically connected in series.
摘要翻译：形成根据本发明的实施例的非易失性存储器件的方法包括形成非易失性存储器单元的高度集成的垂直堆叠的技术。这些垂直堆叠的存储器单元可以利用虚拟存储器单元来补偿当相对大量的存储单元垂直地堆叠在半导体衬底上时使用电连接的多个垂直子串的过程伪像，否则会产生相对较差的功能性存储单元串系列。

48. 发明申请

US20100214844A1 Memory system and programming method thereof 有权
标题翻译：存储器系统及其编程方法
公开(公告)号：US20100214844A1
公开(公告)日：2010-08-26
申请号：US12656083
申请日：2010-01-15
申请人： Changhyun Lee , Jungdal Choi , Byeong-In Choe
发明人： Changhyun Lee , Jungdal Choi , Byeong-In Choe
IPC分类号： G11C16/04
CPC分类号： G11C16/26 , G11C11/5642
摘要： Provided are a non-volatile memory system and a programming method thereof. The programming method of the non-volatile memory system includes adjusting a program-verify-voltage of a selected memory cell referring to program data to be written in an interfering cell configured to provide interference for the selected memory cell and programming the selected memory cell depending on the adjusted program-verify-voltage.
摘要翻译：提供了一种非易失性存储器系统及其编程方法。非易失性存储器系统的编程方法包括：参考要写入被配置为为所选存储器单元提供干扰的干扰单元的程序数据来调整所选择的存储器单元的编程验证电压，并根据调整后的程序验证电压。

49. 发明申请

US20100124119A1 Nonvolatile Memory Device and Read Methods Thereof 有权
标题翻译：非易失性存储器件及其读取方法
公开(公告)号：US20100124119A1
公开(公告)日：2010-05-20
申请号：US12607518
申请日：2009-10-28
申请人： Changhyun Lee , Jungdal Choi , Byeong-In Choi
发明人： Changhyun Lee , Jungdal Choi , Byeong-In Choi
IPC分类号： G11C16/04 , G11C5/14
CPC分类号： G11C8/08 , G11C11/5642 , G11C16/3418 , G11C29/00
摘要： An object of the present inventive concept is providing a nonvolatile memory device having improved reliability by compensating a threshold voltage of a flash memory cell.A nonvolatile memory device according to the present inventive concept includes a memory cell array connected to a plurality of word lines; and a voltage generator for supplying a select read voltage to a select word line and an unselect read voltage to an unselect word line among the plurality of word lines when a read operation is performed. The voltage generator generates the unselect read voltage having a different level according to whether the unselect word line is adjacent to the select word line or not.A nonvolatile memory device according to the present inventive concept compensates a threshold voltage increased or decreased due to various causes. According to the present inventive concept, reliability of a nonvolatile memory device is improved.
摘要翻译：本发明构思的目的是通过补偿闪存单元的阈值电压来提供具有改善的可靠性的非易失性存储器件。根据本发明构思的非易失性存储器件包括连接到多个字线的存储单元阵列; 以及电压发生器，用于当执行读取操作时，将选择读取电压提供给选择字线和取消选择读取电压到多个字线中的未选择字线。电压发生器根据取消选择字线是否与选择字线相邻而产生具有不同电平的取消读取电压。根据本发明构思的非易失性存储器件补偿由于各种原因而增加或减少的阈值电压。根据本发明构思，提高了非易失性存储装置的可靠性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式