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41. 发明授权

US07270123B2 Nebulizer apparatus and method 有权
标题翻译：雾化装置及方法
公开(公告)号：US07270123B2
公开(公告)日：2007-09-18
申请号：US10918656
申请日：2004-08-12
申请人： Jerry Grychowski , Martin P. Foley , Michael Nuttall
发明人： Jerry Grychowski , Martin P. Foley , Michael Nuttall
IPC分类号： A61M11/00
CPC分类号： A61M11/06 , A61M11/002 , A61M2206/14
摘要： A nebulizer for efficiently and reliably delivering aerosolized fluid to an inhaling patient is disclosed. The nebulizer, in one embodiment, includes a fluid channel air inlet and fluid channel air inlet valve responsive to either a manual force external of the nebulizer, or a patient's breathing, to begin the nebulization process. The nebulizer also includes a fluid return channel to a fluid source, such as a removable vial, containing fluid to be aerosolized.
摘要翻译：公开了一种用于有效且可靠地将雾化的流体输送到吸入患者的雾化器。在一个实施例中，雾化器包括响应于雾化器外部的手动力或患者呼吸的流体通道空气入口和流体通道空气入口阀，以开始雾化过程。雾化器还包括流体源的流体返回通道，例如可移除的小瓶，其包含要雾化的流体。

42. 发明授权

US07034353B2 Methods for enhancing capacitors having roughened features to increase charge-storage capacity 失效
公开(公告)号：US07034353B2
公开(公告)日：2006-04-25
申请号：US09965240
申请日：2001-09-26
申请人： Randhir P. S. Thakur , Garry A. Mercaldi , Michael Nuttall , Shenlin Chen , Er-Xuan Ping
发明人： Randhir P. S. Thakur , Garry A. Mercaldi , Michael Nuttall , Shenlin Chen , Er-Xuan Ping
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： G11C11/404 , G11C17/16 , H01L21/28568 , H01L21/76888 , H01L27/1085 , H01L27/10852 , H01L27/11502 , H01L27/11507 , H01L28/60 , H01L28/82 , H01L28/84
摘要： Structures and methods for making a semiconductor structure are discussed. The semiconductor structure includes a rough surface having protrusions formed from an undoped silicon film. If the semiconductor structure is a capacitor, the protrusions help to increase the capacitance of the capacitor. The semiconductor structure also includes a relatively smooth surface abutting the rough surface, wherein the relatively smooth surface is formed from a polycrystalline material.

43. 发明申请

US20060079150A1 Toy for collecting and dispersing toy vehicles 审中-公开
标题翻译：用于收集和分散玩具车的玩具
公开(公告)号：US20060079150A1
公开(公告)日：2006-04-13
申请号：US10961948
申请日：2004-10-08
申请人： Miva Filoseta , Eric So , Dave Sheltman , Michael Nuttall
发明人： Miva Filoseta , Eric So , Dave Sheltman , Michael Nuttall
IPC分类号： A63H17/00
CPC分类号： A63H17/26
摘要： Disclosed is a toy, comprising of rotating means for collecting and dispersing an item and power means coupled to said rotating means, said power means powering said rotating means at a first speed in a first direction to collect said toy, and powering said rotating means at a second speed in a second direction to disperse said toy, said first speed different from said second speed, and said first direction different from said second direction.
摘要翻译：公开了一种玩具，包括用于收集和分散物品的旋转装置和联接到所述旋转装置的动力装置，所述动力装置以第一方向的第一速度对所述旋转装置供电以收集所述玩具，并且将所述旋转装置在第二方向上的第二速度以分散所述玩具，所述第一速度不同于所述第二速度，并且所述第一方向与所述第二方向不同。

44. 发明申请

US20060019475A1 Method of depositing polysilicon 审中-公开
标题翻译：沉积多晶硅的方法
公开(公告)号：US20060019475A1
公开(公告)日：2006-01-26
申请号：US11234334
申请日：2005-09-23
申请人： Michael Nuttall , Er-Xuan Ping , Yongjun Hu
发明人： Michael Nuttall , Er-Xuan Ping , Yongjun Hu
IPC分类号： H01L21/20
CPC分类号： H01L21/28525 , C23C16/04 , C23C16/24 , H01L21/28562 , H01L21/31604 , H01L21/32051 , H01L21/76879 , H01L28/60 , H01L29/41775 , H01L29/41783 , H01L29/7834
摘要： A method of depositing polysilicon includes positioning a substrate within a chemical vapor deposition reactor. The substrate has an exposed substantially crystalline region and an exposed substantially amorphous region. A gaseous precursor comprising silicon is fed to the chemical vapor deposition reactor to provide a reactive atmosphere under conditions effective to substantially selectively deposit polysilicon on the crystalline region relative to the amorphous region. The reactive atmosphere during the depositing consists essentially of a gaseous silane precursor.
摘要翻译：沉积多晶硅的方法包括将衬底定位在化学气相沉积反应器内。衬底具有暴露的基本上结晶的区域和暴露的基本无定形区域。包含硅的气态前体被供给到化学气相沉积反应器，以在有效地相对于非晶区域在晶体区域上基本上选择性地沉积多晶硅的条件下提供反应性气氛。沉积期间的反应性气氛基本上由气态硅烷前体组成。

45. 发明申请

US20060019442A1 Method of forming a capacitor 失效
标题翻译：形成电容器的方法
公开(公告)号：US20060019442A1
公开(公告)日：2006-01-26
申请号：US11234328
申请日：2005-09-23
申请人： Michael Nuttall , Er-Xuan Ping , Yongjun Hu
发明人： Michael Nuttall , Er-Xuan Ping , Yongjun Hu
IPC分类号： H01L21/8242
CPC分类号： H01L21/28525 , C23C16/04 , C23C16/24 , H01L21/28562 , H01L21/31604 , H01L21/32051 , H01L21/76879 , H01L28/60 , H01L29/41775 , H01L29/41783 , H01L29/7834
摘要： A method of forming a capacitor includes forming a first capacitor electrode over a substrate. A substantially crystalline capacitor dielectric layer is formed over the first capacitor electrode. The substrate with the substantially crystalline capacitor dielectric layer is provided within a chemical vapor deposition reactor. Such substrate has an exposed substantially amorphous material. A gaseous precursor comprising silicon is fed to the chemical vapor deposition reactor under conditions effective to substantially selectively deposit polysilicon on the substantially crystalline capacitor dielectric layer relative to the exposed substantially amorphous material, and the polysilicon is formed into a second capacitor electrode.
摘要翻译：形成电容器的方法包括在衬底上形成第一电容器电极。在第一电容器电极上形成基本上结晶的电容器电介质层。具有基本上结晶的电容器电介质层的衬底设置在化学气相沉积反应器内。这种衬底具有暴露的基本无定形的材料。包含硅的气态前体在有效基本上选择性地在基本上结晶的电容器电介质层上沉积多晶硅相对于暴露的基本无定形材料的条件下被馈送到化学气相沉积反应器，并且多晶硅形成第二电容器电极。

46. 发明授权

US06594013B2 Reflectance method for evaluating the surface characteristics of opaque materials 有权
公开(公告)号：US06594013B2
公开(公告)日：2003-07-15
申请号：US10057363
申请日：2001-10-29
申请人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
发明人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
IPC分类号： G01B1100
CPC分类号： G01B11/303
摘要： Disclosed is a process for analyzing the surface characteristics of opaque materials. The method comprises in one embodiment the use of a UV reflectometer to build a calibration matrix of data from a set of control samples and correlating a desired surface characteristic such as roughness or surface area to the set of reflectances of the control samples. The UV reflectometer is then used to measure the reflectances of a test sample of unknown surface characteristics. Reflectances are taken at a variety of angles of reflection for a variety of wavelengths, preferably between about 250 nanometers to about 400 nanometers. These reflectances are then compared against the reflectances of the calibration matrix in order to correlate the closest data in the calibration matrix. By so doing, a variety of information is thereby concluded, due to the broad spectrum of wavelengths and angles of reflection used. This includes information pertaining to the roughness and surface area, as well as other surface characteristics such as grain size, grain density, grain shape, and boundary size between the grains. Surface characteristic evaluation can be conducted in-process in a manner which is non-destructive to the test sample. The method is particularly useful for determining the capacitance of highly granular polysilicon test samples used in the construction of capacitator plates in integrated circuit technology, and can be used to determine the existence of flat smooth surfaces, and the presence of prismatic and hemispherical irregularities on flat smooth surfaces.

47. 发明授权

US5658381A Method to form hemispherical grain (HSG) silicon by implant seeding followed by vacuum anneal 失效
标题翻译：通过种植接种然后真空退火形成半球形晶粒（HSG）硅的方法
公开(公告)号：US5658381A
公开(公告)日：1997-08-19
申请号：US439022
申请日：1995-05-11
申请人： Randhir P. S. Thakur , Michael Nuttall
发明人： Randhir P. S. Thakur , Michael Nuttall
IPC分类号： C30B1/02 , H01L21/02 , C30B31/22
CPC分类号： H01L28/82 , C30B1/023 , C30B29/06 , H01L28/84 , H01L28/90 , Y10S438/964
摘要： Hemispherical grain (HSG) silicon for a semiconductor device, is formed by: introducing a crystallization nucleus into a silicon material; and converting the silicon material into the HSG silicon by promoting the growth of the crystallization nucleus during a high vacuum anneal. An embodiment of the present invention is a semiconductor device having hemispherical grain (HSG) silicon, where the HSG silicon comprises a silicon material converted into the HSG silicon from the growth of at least one implanted crystallization nucleus.
摘要翻译：半导体器件的半球形晶粒（HSG）硅通过：将结晶核引入硅材料中而形成; 并通过在高真空退火期间促进结晶核的生长而将硅材料转化成HSG硅。本发明的一个实施方案是具有半球形晶粒（HSG）硅的半导体器件，其中HSG硅包括从至少一个注入的结晶核的生长转化成HSG硅的硅材料。

48. 发明授权

US08690632B2 Toy track set and relay segments 有权
标题翻译：玩具轨道集和继电器段
公开(公告)号：US08690632B2
公开(公告)日：2014-04-08
申请号：US12766808
申请日：2010-04-23
申请人： Stacy L. O'Connor , Michael Nuttall , Brendon Vetuskey
发明人： Stacy L. O'Connor , Michael Nuttall , Brendon Vetuskey
IPC分类号： A63H18/00
CPC分类号： A63H18/02 , A63H18/023 , A63H18/026 , A63H18/028 , A63H18/06
摘要： A relay segment for a toy track set is provided, the relay segment having a trigger moveably secured to the relay segment proximate to a first vehicle track segment pivotally mounted to the relay segment for adjustable movement with respect to the relay segment, the trigger being capable of movement between a first position and a second position; and a launching element for launching a vehicle from the relay segment when the trigger is moved from the first position to the second position.
摘要翻译：提供了一种用于玩具轨道组的继电器段，所述继电器段具有可移动地固定到所述继电器段的触发器，所述触发器可靠地枢转地安装到所述继电器段上的第一车辆轨道段，以相对于所述继电器段可调节地移动，所述触发器能够在第一位置和第二位置之间的运动; 以及用于当所述触发器从所述第一位置移动到所述第二位置时从所述继电器段发射车辆的发射元件。

49. 发明申请

US20130295818A1 TOY 有权
标题翻译：玩具
公开(公告)号：US20130295818A1
公开(公告)日：2013-11-07
申请号：US13662681
申请日：2012-10-29
申请人： Stacy Lynn O'Connor , Michael Nuttall
发明人： Stacy Lynn O'Connor , Michael Nuttall
IPC分类号： A63H18/02
CPC分类号： A63H18/02 , A63H18/04 , Y10T29/49826
摘要： A reconfigurable structure for use with toy vehicles is provided, the structure having a first tower structure having a plurality of floors each having an entrance and an exit; a lift movably secured to the first tower, the lift being positionable at any entrance of the plurality of floors of the first tower; a ramp movably secured to the first tower, the ramp being positionable at any exit of the plurality of floors of the first tower; a second tower structure having a plurality of floors each having an entrance and an exit; a lift movably secured to the second tower, the lift being positionable at any entrance of the plurality of floors of the second tower; a ramp movably secured to the second tower, the ramp being positionable at any exit of the plurality of floors of the second tower; and wherein the reconfigurable structure is capable of having a stowed configuration and a deployed configuration, wherein the ramp of the first tower is configured to releasably engage the lift of the second tower when the reconfigurable structure is in the deployed configuration.
摘要翻译：提供了一种用于玩具车辆的可重构结构，该结构具有第一塔架结构，其具有多个楼层，每层具有入口和出口; 可移动地固定到第一塔架的升降机，电梯可定位在第一塔架的多个楼层的任何入口处; 可移动地固定到第一塔的斜坡，斜坡可定位在第一塔的多个楼层的任何出口处; 第二塔结构，其具有多个层，每层具有入口和出口; 可移动地固定到第二塔架的升降机，升降机可定位在第二塔架的多个楼层的任何入口处; 可移动地固定到第二塔的斜坡，斜坡可定位在第二塔的多个楼层的任何出口处; 并且其中所述可重构结构能够具有收起的构造和展开的构造，其中当所述可重构结构处于展开配置时，所述第一塔的所述坡道被构造成可释放地接合所述第二塔的升降。

50. 发明申请

US20130231028A1 TOY VEHICLE TRACK SET 审中-公开
标题翻译：玩具车跟踪设置
公开(公告)号：US20130231028A1
公开(公告)日：2013-09-05
申请号：US13597544
申请日：2012-08-29
申请人： Eric Ostendorff , Michael Nuttall
发明人： Eric Ostendorff , Michael Nuttall
IPC分类号： A63H18/02
CPC分类号： A63H18/028 , A63H18/026
摘要： A track set for toy vehicles is provided, the track set having: a first track circuit having a loop section and a figure-8 track circuit; a second track circuit having a loop section and figure-8 track circuit, wherein the figure-8 track circuits are overlaid on each other to provide multiple intersections between each figure-8 track circuit, wherein the toy vehicles travelling on the figure-8 track circuits can crash into each other as they travel along the figure-8 track circuits; and a mechanism for propelling the vehicles along the first track circuit and the second track circuit.
摘要翻译：提供了一种用于玩具车辆的轨道组，轨道组具有：具有环路部分和图8轨道电路的第一轨道电路; 具有环路部分和图8轨道电路的第二轨道电路，其中图8轨道电路彼此重叠以在每个图8轨道电路之间提供多个交点，其中在图8轨道上行进的玩具车电路可以沿着图8轨道电路行进而相互碰撞; 以及用于沿着第一轨道电路和第二轨道电路推动车辆的机构。

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