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1. 发明授权

US07034353B2 Methods for enhancing capacitors having roughened features to increase charge-storage capacity 失效
公开(公告)号：US07034353B2
公开(公告)日：2006-04-25
申请号：US09965240
申请日：2001-09-26
申请人： Randhir P. S. Thakur , Garry A. Mercaldi , Michael Nuttall , Shenlin Chen , Er-Xuan Ping
发明人： Randhir P. S. Thakur , Garry A. Mercaldi , Michael Nuttall , Shenlin Chen , Er-Xuan Ping
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： G11C11/404 , G11C17/16 , H01L21/28568 , H01L21/76888 , H01L27/1085 , H01L27/10852 , H01L27/11502 , H01L27/11507 , H01L28/60 , H01L28/82 , H01L28/84
摘要： Structures and methods for making a semiconductor structure are discussed. The semiconductor structure includes a rough surface having protrusions formed from an undoped silicon film. If the semiconductor structure is a capacitor, the protrusions help to increase the capacitance of the capacitor. The semiconductor structure also includes a relatively smooth surface abutting the rough surface, wherein the relatively smooth surface is formed from a polycrystalline material.

2. 发明授权

US06594013B2 Reflectance method for evaluating the surface characteristics of opaque materials 有权
公开(公告)号：US06594013B2
公开(公告)日：2003-07-15
申请号：US10057363
申请日：2001-10-29
申请人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
发明人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
IPC分类号： G01B1100
CPC分类号： G01B11/303
摘要： Disclosed is a process for analyzing the surface characteristics of opaque materials. The method comprises in one embodiment the use of a UV reflectometer to build a calibration matrix of data from a set of control samples and correlating a desired surface characteristic such as roughness or surface area to the set of reflectances of the control samples. The UV reflectometer is then used to measure the reflectances of a test sample of unknown surface characteristics. Reflectances are taken at a variety of angles of reflection for a variety of wavelengths, preferably between about 250 nanometers to about 400 nanometers. These reflectances are then compared against the reflectances of the calibration matrix in order to correlate the closest data in the calibration matrix. By so doing, a variety of information is thereby concluded, due to the broad spectrum of wavelengths and angles of reflection used. This includes information pertaining to the roughness and surface area, as well as other surface characteristics such as grain size, grain density, grain shape, and boundary size between the grains. Surface characteristic evaluation can be conducted in-process in a manner which is non-destructive to the test sample. The method is particularly useful for determining the capacitance of highly granular polysilicon test samples used in the construction of capacitator plates in integrated circuit technology, and can be used to determine the existence of flat smooth surfaces, and the presence of prismatic and hemispherical irregularities on flat smooth surfaces.

3. 发明授权

US5658381A Method to form hemispherical grain (HSG) silicon by implant seeding followed by vacuum anneal 失效
标题翻译：通过种植接种然后真空退火形成半球形晶粒（HSG）硅的方法
公开(公告)号：US5658381A
公开(公告)日：1997-08-19
申请号：US439022
申请日：1995-05-11
申请人： Randhir P. S. Thakur , Michael Nuttall
发明人： Randhir P. S. Thakur , Michael Nuttall
IPC分类号： C30B1/02 , H01L21/02 , C30B31/22
CPC分类号： H01L28/82 , C30B1/023 , C30B29/06 , H01L28/84 , H01L28/90 , Y10S438/964
摘要： Hemispherical grain (HSG) silicon for a semiconductor device, is formed by: introducing a crystallization nucleus into a silicon material; and converting the silicon material into the HSG silicon by promoting the growth of the crystallization nucleus during a high vacuum anneal. An embodiment of the present invention is a semiconductor device having hemispherical grain (HSG) silicon, where the HSG silicon comprises a silicon material converted into the HSG silicon from the growth of at least one implanted crystallization nucleus.
摘要翻译：半导体器件的半球形晶粒（HSG）硅通过：将结晶核引入硅材料中而形成; 并通过在高真空退火期间促进结晶核的生长而将硅材料转化成HSG硅。本发明的一个实施方案是具有半球形晶粒（HSG）硅的半导体器件，其中HSG硅包括从至少一个注入的结晶核的生长转化成HSG硅的硅材料。

4. 发明授权

US07989864B2 Methods for enhancing capacitors having roughened features to increase charge-storage capacity 失效
标题翻译：用于增强具有粗糙特征的电容器以增加电荷存储容量的方法
公开(公告)号：US07989864B2
公开(公告)日：2011-08-02
申请号：US12538779
申请日：2009-08-10
申请人： Randhir P. S. Thakur , Garry A. Mercaldi , Michael Nuttall , Shenline Chen , Er-Xuan Ping
发明人： Randhir P. S. Thakur , Garry A. Mercaldi , Michael Nuttall , Shenline Chen , Er-Xuan Ping
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： G11C11/404 , G11C17/16 , H01L21/28568 , H01L21/76888 , H01L27/1085 , H01L27/10852 , H01L27/11502 , H01L27/11507 , H01L28/60 , H01L28/82 , H01L28/84
摘要： Structures and methods for making a semiconductor structure are discussed. The semiconductor structure includes a rough surface having protrusions formed from an undoped silicon film. If the semiconductor structure is a capacitor, the protrusions help to increase the capacitance of the capacitor. The semiconductor structure also includes a relatively smooth surface abutting the rough surface, wherein the relatively smooth surface is formed from a polycrystalline material.
摘要翻译：讨论了制造半导体结构的结构和方法。半导体结构包括具有由未掺杂硅膜形成的突起的粗糙表面。如果半导体结构是电容器，则突起有助于增加电容器的电容。半导体结构还包括与粗糙表面邻接的相对光滑的表面，其中相对光滑的表面由多晶材料形成。

5. 发明授权

US06479854B1 Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer 有权
公开(公告)号：US06479854B1
公开(公告)日：2002-11-12
申请号：US09353574
申请日：1999-07-15
申请人： Randhir P. S. Thakur , Garry A. Mercaldi , Michael Nuttall
发明人： Randhir P. S. Thakur , Garry A. Mercaldi , Michael Nuttall
IPC分类号： H01L27108
CPC分类号： G11C11/404 , G11C17/16 , H01L21/28568 , H01L21/76888 , H01L27/1085 , H01L28/60
摘要： A semiconductor structure includes a dielectric layer having first and second opposing sides. A conductive layer is adjacent to the first side of the dielectric layer and is coupled to a first terminal, and a conductive barrier layer is adjacent to the second side of the dielectric layer and is coupled to a second terminal. The conductive barrier layer may be formed from tungsten nitride, tungsten silicon nitride, titanium silicon nitride or other barrier materials.

6. 发明授权

US06417928B2 Reflectance method for evaluating the surface characteristics of opaque materials 失效
公开(公告)号：US06417928B2
公开(公告)日：2002-07-09
申请号：US09793317
申请日：2001-02-26
申请人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
发明人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
IPC分类号： G01B1130
CPC分类号： G01B11/303
摘要： Disclosed is a process for analyzing the surface characteristics of opaque materials. The method comprises in one embodiment the use of a UV reflectometer to build a calibration matrix of data from a set of control samples and correlating a desired surface characteristic such as roughness or surface area to the set of reflectances of the control samples. The UV reflectometer is then used to measure the reflectances of a test sample of unknown surface characteristics. Reflectances are taken at a variety of angles of reflection for a variety of wavelengths, preferably between about 250 nanometers to about 400 nanometers. These reflectances are then compared against the reflectances of the calibration matrix in order to correlate the closest data in the calibration matrix. By so doing, a variety of information is thereby concluded, due to the broad spectrum of wavelengths and angles of reflection used. This includes information pertaining to the roughness and surface area, as well as other surface characteristics such as grain size, grain density, grain shape, and boundary size between the grains. Surface characteristic evaluation can be conducted in-process in a manner which is non-destructive to the test sample. The method is particularly useful for determining the capacitance of highly granular polysilicon test samples used in the construction of capacitator plates in integrated circuit technology, and can be used to determine the existence of flat smooth surfaces, and the presence of prismatic and hemispherical irregularities on flat smooth surfaces.

7. 发明授权

US06327040B2 Reflectance method for evaluating the surface characteristics of opaque materials 失效
标题翻译：用于评估不透明材料表面特性的反射方法
公开(公告)号：US06327040B2
公开(公告)日：2001-12-04
申请号：US09793435
申请日：2001-02-26
申请人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
发明人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
IPC分类号： G01B1130
CPC分类号： G01B11/303
摘要： Disclosed is a process for analyzing the surface characteristics of opaque materials. The method comprises in one embodiment the use of a UV reflectometer to build a calibration matrix of data from a set of control samples and correlating a desired surface characteristic such as roughness or surface area to the set of reflectances of the control samples. The UV reflectometer is then used to measure the reflectances of a test sample of unknown surface characteristics. Reflectances are taken at a variety of angles of reflection for a variety of wavelengths, preferably between about 250 nanometers to about 400 nanomneters. These reflectances are then compared against the reflectances of the calibration matrix in order to correlate the closest data in the calibration matrix. By so doing, a variety of information is thereby concluded, due to the broad spectrum of wavelengths and angles of reflection used. This includes information pertaining to the roughness and surface area, as well as other surface characteristics such as grain size, grain density, grain shape, and boundary size between the grains. Surface characteristic evaluation can be conducted in-process in a manner which is non-destructive to the test sample. The method is particularly useful for determining the capacitance of highly granular polysilicon test samples used in the construction of capacitator plates in integrated circuit technology, and can be used to determine the existence of flat smooth surfaces, the presence of prismatic and hemispherical irregularities on flat smooth surfaces, and the size of such irregularities.
摘要翻译：公开了一种用于分析不透明材料的表面特性的方法。该方法在一个实施方案中包括使用UV反射计来构建来自一组对照样品的数据的校准矩阵，并将期望的表面特性如粗糙度或表面积与对照样品的一组反射率相关联。然后使用UV反射计来测量未知表面特性的测试样品的反射率。在各种各样的波长的反射角度下进行反射，优选在约250纳米至约400纳米的范围内。然后将这些反射率与校准矩阵的反射率进行比较，以便将校准矩阵中最接近的数据相关联。通过这样做，由于广泛的波长和使用的反射角度，从而得出各种信息。这包括关于粗糙度和表面积的信息，以及晶粒之间的其他表面特性，例如晶粒尺寸，晶粒密度，晶粒形状和边界尺寸。表面特性评估可以以对测试样品非破坏性的方式进行。该方法特别有助于确定集成电路技术中用于构建电容器板的高度粒状多晶硅测试样品的电容，并且可用于确定平滑光滑表面的存在，平坦光滑的棱镜和半球形不规则的存在表面和这种不规则的大小。

8. 发明授权

US06225157B1 Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer 有权
标题翻译：具有阻挡层电极和改进的阻挡层的电容器/反熔丝结构
公开(公告)号：US06225157B1
公开(公告)日：2001-05-01
申请号：US09260995
申请日：1999-03-01
申请人： Randhir P. S. Thakur , Garry A. Mercaldi , Michael Nuttall
发明人： Randhir P. S. Thakur , Garry A. Mercaldi , Michael Nuttall
IPC分类号： H01L2170
CPC分类号： G11C11/404 , G11C17/16 , H01L21/28568 , H01L21/76888 , H01L27/1085 , H01L28/60
摘要： A semiconductor structure includes a dielectric layer having first and second opposing sides. A conductive layer is adjacent to the first side of the dielectric layer and is coupled to a first terminal, and a conductive barrier layer is adjacent to the second side of the dielectric layer and is coupled to a second terminal. The conductive barrier layer may be formed from tungsten nitride, tungsten silicon nitride, titanium silicon nitride or other barrier materials.
摘要翻译：半导体结构包括具有第一和第二相对侧的电介质层。导电层与电介质层的第一侧相邻并且耦合到第一端子，并且导电阻挡层与电介质层的第二侧相邻并耦合到第二端子。导电阻挡层可以由氮化钨，氮化钨，氮化钛或其它阻挡材料形成。

9. 发明授权

US06682970B1 Capacitor/antifuse structure having a barrier-layer electrode and improved barrier layer 有权
标题翻译：具有阻挡层电极和改进的阻挡层的电容器/反熔丝结构
公开(公告)号：US06682970B1
公开(公告)日：2004-01-27
申请号：US09692897
申请日：2000-10-19
申请人： Randhir P. S. Thakur , Garry A. Mercaldi , Michael Nuttall
发明人： Randhir P. S. Thakur , Garry A. Mercaldi , Michael Nuttall
IPC分类号： H01L218242
CPC分类号： H01L27/11502 , G11C11/404 , G11C17/16 , H01L21/28568 , H01L21/76888 , H01L27/1085 , H01L27/11507 , H01L28/60 , H01L28/84
摘要： A semiconductor structure includes a dielectric layer having first and second opposing sides. A conductive layer is adjacent to the first side of the dielectric layer and is coupled to a first terminal, and a conductive barrier layer is adjacent to the second side of the dielectric layer and is coupled to a second terminal. The conductive barrier layer may be formed from tungsten nitride, tungsten silicon nitride, titanium silicon nitride or other barrier material.
摘要翻译：半导体结构包括具有第一和第二相对侧的电介质层。导电层与电介质层的第一侧相邻并且耦合到第一端子，并且导电阻挡层与电介质层的第二侧相邻并耦合到第二端子。导电阻挡层可以由氮化钨，氮化钨，氮化钛或其它阻挡材料形成。

10. 发明授权

US06262485B1 Using implants to lower anneal temperatures 有权
标题翻译：使用植入物降低退火温度
公开(公告)号：US06262485B1
公开(公告)日：2001-07-17
申请号：US09258465
申请日：1999-02-26
申请人： Randhir P. S. Thakur , Michael Nuttall
发明人： Randhir P. S. Thakur , Michael Nuttall
IPC分类号： H01L2348
CPC分类号： H01L21/28518
摘要： A method for lowering the anneal temperature required to form a multi-component material, such as refractory metal silicide. A shallow layer of titanium is implanted in the bottom of the contact area after the contact area is defined. Titanium is then deposited over the contact area and annealed, forming titanium silicide. A second embodiment comprises depositing titanium over a defined contact area. Silicon is then implanted in the deposited titanium layer and annealed, forming titanium silicide. A third embodiment comprises combining the methods of the first and second embodiments. In further embodiment, nitrogen, cobalt, cesium, hydrogen, fluorine, and deuterium are also implanted at selected times.
摘要翻译：降低形成诸如难熔金属硅化物的多组分材料所需的退火温度的方法。在定义接触区域之后，在接触区域的底部注入浅层的钛。然后将钛沉积在接触区域上并退火，形成硅化钛。第二实施例包括在限定的接触区域上沉积钛。然后将硅注入沉积的钛层并退火，形成硅化钛。第三实施例包括组合第一和第二实施例的方法。在进一步的实施方案中，氮，钴，铯，氢，氟和氘也在选定的时间被植入。

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