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1. 发明授权

US06594013B2 Reflectance method for evaluating the surface characteristics of opaque materials 有权
公开(公告)号：US06594013B2
公开(公告)日：2003-07-15
申请号：US10057363
申请日：2001-10-29
申请人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
发明人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
IPC分类号： G01B1100
CPC分类号： G01B11/303
摘要： Disclosed is a process for analyzing the surface characteristics of opaque materials. The method comprises in one embodiment the use of a UV reflectometer to build a calibration matrix of data from a set of control samples and correlating a desired surface characteristic such as roughness or surface area to the set of reflectances of the control samples. The UV reflectometer is then used to measure the reflectances of a test sample of unknown surface characteristics. Reflectances are taken at a variety of angles of reflection for a variety of wavelengths, preferably between about 250 nanometers to about 400 nanometers. These reflectances are then compared against the reflectances of the calibration matrix in order to correlate the closest data in the calibration matrix. By so doing, a variety of information is thereby concluded, due to the broad spectrum of wavelengths and angles of reflection used. This includes information pertaining to the roughness and surface area, as well as other surface characteristics such as grain size, grain density, grain shape, and boundary size between the grains. Surface characteristic evaluation can be conducted in-process in a manner which is non-destructive to the test sample. The method is particularly useful for determining the capacitance of highly granular polysilicon test samples used in the construction of capacitator plates in integrated circuit technology, and can be used to determine the existence of flat smooth surfaces, and the presence of prismatic and hemispherical irregularities on flat smooth surfaces.

2. 发明授权

US06417928B2 Reflectance method for evaluating the surface characteristics of opaque materials 失效
公开(公告)号：US06417928B2
公开(公告)日：2002-07-09
申请号：US09793317
申请日：2001-02-26
申请人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
发明人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
IPC分类号： G01B1130
CPC分类号： G01B11/303
摘要： Disclosed is a process for analyzing the surface characteristics of opaque materials. The method comprises in one embodiment the use of a UV reflectometer to build a calibration matrix of data from a set of control samples and correlating a desired surface characteristic such as roughness or surface area to the set of reflectances of the control samples. The UV reflectometer is then used to measure the reflectances of a test sample of unknown surface characteristics. Reflectances are taken at a variety of angles of reflection for a variety of wavelengths, preferably between about 250 nanometers to about 400 nanometers. These reflectances are then compared against the reflectances of the calibration matrix in order to correlate the closest data in the calibration matrix. By so doing, a variety of information is thereby concluded, due to the broad spectrum of wavelengths and angles of reflection used. This includes information pertaining to the roughness and surface area, as well as other surface characteristics such as grain size, grain density, grain shape, and boundary size between the grains. Surface characteristic evaluation can be conducted in-process in a manner which is non-destructive to the test sample. The method is particularly useful for determining the capacitance of highly granular polysilicon test samples used in the construction of capacitator plates in integrated circuit technology, and can be used to determine the existence of flat smooth surfaces, and the presence of prismatic and hemispherical irregularities on flat smooth surfaces.

3. 发明授权

US06327040B2 Reflectance method for evaluating the surface characteristics of opaque materials 失效
标题翻译：用于评估不透明材料表面特性的反射方法
公开(公告)号：US06327040B2
公开(公告)日：2001-12-04
申请号：US09793435
申请日：2001-02-26
申请人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
发明人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
IPC分类号： G01B1130
CPC分类号： G01B11/303
摘要： Disclosed is a process for analyzing the surface characteristics of opaque materials. The method comprises in one embodiment the use of a UV reflectometer to build a calibration matrix of data from a set of control samples and correlating a desired surface characteristic such as roughness or surface area to the set of reflectances of the control samples. The UV reflectometer is then used to measure the reflectances of a test sample of unknown surface characteristics. Reflectances are taken at a variety of angles of reflection for a variety of wavelengths, preferably between about 250 nanometers to about 400 nanomneters. These reflectances are then compared against the reflectances of the calibration matrix in order to correlate the closest data in the calibration matrix. By so doing, a variety of information is thereby concluded, due to the broad spectrum of wavelengths and angles of reflection used. This includes information pertaining to the roughness and surface area, as well as other surface characteristics such as grain size, grain density, grain shape, and boundary size between the grains. Surface characteristic evaluation can be conducted in-process in a manner which is non-destructive to the test sample. The method is particularly useful for determining the capacitance of highly granular polysilicon test samples used in the construction of capacitator plates in integrated circuit technology, and can be used to determine the existence of flat smooth surfaces, the presence of prismatic and hemispherical irregularities on flat smooth surfaces, and the size of such irregularities.
摘要翻译：公开了一种用于分析不透明材料的表面特性的方法。该方法在一个实施方案中包括使用UV反射计来构建来自一组对照样品的数据的校准矩阵，并将期望的表面特性如粗糙度或表面积与对照样品的一组反射率相关联。然后使用UV反射计来测量未知表面特性的测试样品的反射率。在各种各样的波长的反射角度下进行反射，优选在约250纳米至约400纳米的范围内。然后将这些反射率与校准矩阵的反射率进行比较，以便将校准矩阵中最接近的数据相关联。通过这样做，由于广泛的波长和使用的反射角度，从而得出各种信息。这包括关于粗糙度和表面积的信息，以及晶粒之间的其他表面特性，例如晶粒尺寸，晶粒密度，晶粒形状和边界尺寸。表面特性评估可以以对测试样品非破坏性的方式进行。该方法特别有助于确定集成电路技术中用于构建电容器板的高度粒状多晶硅测试样品的电容，并且可用于确定平滑光滑表面的存在，平坦光滑的棱镜和半球形不规则的存在表面和这种不规则的大小。

4. 发明授权

US06195163B1 Reflectance method for evaluating the surface characteristics of opaque materials 有权
标题翻译：用于评估不透明材料表面特性的反射方法
公开(公告)号：US06195163B1
公开(公告)日：2001-02-27
申请号：US09175061
申请日：1998-10-19
申请人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
发明人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
IPC分类号： G01B1130
CPC分类号： G01B11/303
摘要： Disclosed is a process for analyzing the surface characteristics of opaque materials. The method comprises in one embodiment the use of a UV reflectometer to build a calibration matrix of data from a set of control samples and correlating a desired surface characteristic such as roughness or surface area to the set of reflectances of the control samples. The UV reflectometer is then used to measure the reflectances of a test sample of unknown surface characteristics. Reflectances are taken at a variety of angles of reflection for a variety of wavelengths, preferably between about 250 nanometers to about 400 nanometers. These reflectances are then compared against the reflectances of the calibration matrix in order to correlate the closest data in the calibration matrix. By so doing, a variety of information is thereby concluded, due to the broad spectrum of wavelengths and angles of reflection used. This includes information pertaining to the roughness and surface area, as well as other surface characteristics such as grain size, grain density, grain shape, and boundary size between the grains. Surface characteristic evaluation can be conducted in-process in a manner which is non-destructive to the test sample. The method is particularly useful for determining the capacitance of highly granular polysilicon test samples used in the construction of capacitator plates in integrated circuit technology, and can be used to determine the existence of flat smooth surfaces, and the presence of prismatic and hemispherical irregularities on flat smooth surfaces.
摘要翻译：公开了一种用于分析不透明材料的表面特性的方法。该方法在一个实施方案中包括使用UV反射计来构建来自一组对照样品的数据的校准矩阵，并将期望的表面特性如粗糙度或表面积与对照样品的一组反射率相关联。然后使用UV反射计来测量未知表面特性的测试样品的反射率。对于各种波长，优选在约250纳米到约400纳米之间的各种反射角拍摄反射率。然后将这些反射率与校准矩阵的反射率进行比较，以便将校准矩阵中最接近的数据相关联。通过这样做，由于广泛的波长和使用的反射角度，从而得出各种信息。这包括关于粗糙度和表面积的信息，以及晶粒之间的其他表面特性，例如晶粒尺寸，晶粒密度，晶粒形状和边界尺寸。表面特性评估可以以对测试样品非破坏性的方式进行。该方法对于确定集成电路技术中电容器板结构中使用的高度粒状多晶硅测试样品的电容特别有用，可用于确定平坦光滑表面的存在，以及平面上存在棱镜和半球形不规则光滑的表面。

5. 发明授权

US5825498A Ultraviolet light reflectance method for evaluating the surface characteristics of opaque materials 失效
标题翻译：用于评估不透明材料表面特性的紫外光反射率法
公开(公告)号：US5825498A
公开(公告)日：1998-10-20
申请号：US596469
申请日：1996-02-05
申请人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
发明人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
IPC分类号： G01B11/30 , G01B11/00
CPC分类号： G01B11/303
摘要： Disclosed is a process for analyzing the surface characteristics of opaque materials. The method comprises in one embodiment the use of a UV reflectometer to build a calibration matrix of data from a set of control samples and correlating a desired surface characteristic such as roughness or surface area to the set of reflectances of the control samples. The UV reflectometer is then used to measure the reflectances of a test sample of unknown surface characteristics. Reflectances are taken at a variety of wavelengths, preferably between about 250 nanometers to about 400 nanometers. These reflectances are then compared against the reflectances of the calibration matrix in order to correlate the closest data in the calibration matrix. By so doing, a variety of information is thereby concluded, due to the broad spectrum of wavelengths used. This includes information pertaining to the roughness and surface area, as well as other surface characteristics such as grain size, grain density, grain shape, and boundary size between the grains. Surface characteristic evaluation can be conducted in-process in a manner which is non-destructive to the test sample. The method is particularly useful for determining the capacitance of highly granular polysilicon test samples used in the construction of capacitator plates in integrated circuit technology.
摘要翻译：公开了一种用于分析不透明材料的表面特性的方法。该方法在一个实施方案中包括使用UV反射计来构建来自一组对照样品的数据的校准矩阵，并将期望的表面特性如粗糙度或表面积与对照样品的一组反射率相关联。然后使用UV反射计测量未知表面特性的测试样品的反射率。反射率以各种波长进行，优选在约250纳米至约400纳米之间。然后将这些反射率与校准矩阵的反射率进行比较，以便将校准矩阵中最接近的数据相关联。通过这样做，由于所使用的波长范围广，因此得出各种信息。这包括关于粗糙度和表面积的信息，以及晶粒之间的其他表面特性，例如晶粒尺寸，晶粒密度，晶粒形状和边界尺寸。表面特性评估可以以对测试样品非破坏性的方式进行。该方法对于确定集成电路技术中用于构造电容器板的高度粒状多晶硅测试样品的电容特别有用。

6. 发明授权

US06452678B2 Reflectance method for evaluating the surface characteristics of opaque materials 有权
标题翻译：用于评估不透明材料表面特性的反射方法
公开(公告)号：US06452678B2
公开(公告)日：2002-09-17
申请号：US09928286
申请日：2001-08-10
申请人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
发明人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
IPC分类号： G01B1100
CPC分类号： G01B11/303
摘要： Disclosed is a process for analyzing the surface characteristics of opaque materials. The method comprises in one embodiment the use of a UV reflectometer to build a calibration matrix of data from a set of control samples and correlating a desired surface characteristic such as rouglness or surface area to the set of reflectances of the control samples. The UV reflectometer is then used to measure the reflectances of a test sample of unknown surface characteristics. Reflectances are taken at a variety of angles of reflection for a variety of wavelengths, preferably between about 250 nanometers to about 400 nanometers. These reflectances are then compared against the reflectances of the calibration matrix in order to correlate the closest data in the calibration matrix. By so doing, a variety of information is thereby concluded, due to the broad spectrum of wavelengths and angles of reflection used. This includes information pertaining to the roughness and surface area, as well as other surface characteristics such as grain size, grain density, grain shape, and boundary size between the grains. Surface characteristic evaluation can be conducted in-process in a manner which is non-destructive to the test sample. The method is particularly useful for determining the capacitance of highly granular polysilicon test samples used in the construction of capacitator plates in integrated circuit technology, and can be used to determine the existence of flat smooth surfaces, and the presence of prismatic and hemispherical irregularities on flat smooth surfaces.
摘要翻译：公开了一种用于分析不透明材料的表面特性的方法。该方法在一个实施例中包括使用UV反射计来构建来自一组控制样本的数据的校准矩阵，并将期望的表面特性（例如粗糙度或表面积）与对照样品的一组反射率相关联。然后使用UV反射计来测量未知表面特性的测试样品的反射率。对于各种波长，优选在约250纳米到约400纳米之间的各种反射角拍摄反射率。然后将这些反射率与校准矩阵的反射率进行比较，以便将校准矩阵中最接近的数据相关联。通过这样做，由于广泛的波长和使用的反射角度，从而得出各种信息。这包括关于粗糙度和表面积的信息，以及晶粒之间的其他表面特性，例如晶粒尺寸，晶粒密度，晶粒形状和边界尺寸。表面特性评估可以以对测试样品非破坏性的方式进行。该方法对于确定集成电路技术中电容器板结构中使用的高度粒状多晶硅测试样品的电容特别有用，可用于确定平坦光滑表面的存在，以及平面上存在棱镜和半球形不规则光滑的表面。

7. 发明授权

US06275292B1 Reflectance method for evaluating the surface characteristics of opaque materials 有权
公开(公告)号：US06275292B1
公开(公告)日：2001-08-14
申请号：US09517473
申请日：2000-03-02
申请人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
发明人： Randhir P. S. Thakur , Michael Nuttall , J. Brett Rolfson , Robert James Burke
IPC分类号： G01B1130
CPC分类号： G01B11/303
摘要： Disclosed is a process for analyzing the surface characteristics of opaque materials. The method comprises in one embodiment the use of a UV reflectometer to build a calibration matrix of data from a set of control samples and correlating a desired surface characteristic such as roughness or surface area to the set of reflectances of the control samples. The UV reflectometer is then used to measure the reflectances of a test sample of unknown surface characteristics. Reflectances are taken at a variety of angles of reflection for a variety of wavelengths, preferably between about 250 nanometers to about 400 nanometers. These reflectances are then compared against the reflectances of the calibration matrix in order to correlate the closest data in the calibration matrix. By so doing, a variety of information is thereby concluded, due to the broad spectrum of wavelengths and angles of reflection used. This includes information pertaining to the roughness and surface area, as well as other surface characteristics such as grain size, grain density, grain shape, and boundary size between the grains. Surface characteristic evaluation can be conducted in-process in a manner which is non-destructive to the test sample. The method is particularly useful for determining the capacitance of highly granular polysilicon test samples used in the construction of capacitator plates in integrated circuit technology, and can be used to determine the existence of flat smooth surfaces, and the presence of prismatic and hemispherical irregularities on flat smooth surfaces.

8. 发明授权

US6072226A Field isolation structure formed using ozone oxidation and tapering 失效
标题翻译：采用臭氧氧化和锥形形成现场隔离结构
公开(公告)号：US6072226A
公开(公告)日：2000-06-06
申请号：US844169
申请日：1997-04-18
申请人： Randhir P. S. Thakur , J. Brett Rolfson , Fernando Gonzalez , John T. Moore
发明人： Randhir P. S. Thakur , J. Brett Rolfson , Fernando Gonzalez , John T. Moore
IPC分类号： H01L21/3105 , H01L21/316 , H01L21/762 , H01L29/00
CPC分类号： H01L21/31053 , H01L21/02238 , H01L21/02255 , H01L21/31658 , H01L21/76216 , Y10S438/978
摘要： A method for forming a field isolation structure and an improved field isolation structure are provided. The method includes forming a field oxide on a silicon substrate using an ozone enhanced local oxidation of silicon (LOCOS) process. Following formation of the field oxide a surface topography of the field oxide is sloped or tapered by ion milling, dry etching, reactive ion etching or chemical mechanical planarization. With an ozone enhanced LOCOS process, oxidation rates are increased and stress between the field oxide and substrate are reduced. This permits the formation of field isolation structures with reduced lateral encroachment and a smaller bird's beak area. In addition, the sloped topography of the field oxide permits a subsequently deposited conductive layer (e.g., polysilicon) to be etched without the formation of conductive stringers. During the etch process the active areas on the substrate can be protected with a sacrificial oxide or by only partially removing the LOCOS mask.
摘要翻译：提供了一种用于形成场隔离结构和改进的场隔离结构的方法。该方法包括使用臭氧增强的局部氧化硅（LOCOS）工艺在硅衬底上形成场氧化物。在形成场氧化物之后，场氧化物的表面形貌通过离子研磨，干蚀刻，反应离子蚀刻或化学机械平面化而倾斜或渐缩。通过臭氧增强的LOCOS工艺，氧化速率增加，场氧化物和衬底之间的应力降低。这允许形成具有减小的横向侵入和较小鸟喙面积的场隔离结构。此外，场氧化物的倾斜形貌允许随后沉积的导电层（例如，多晶硅）被蚀刻而不形成导电桁条。在蚀刻过程中，可以用牺牲氧化物或仅部分去除LOCOS掩模来保护衬底上的有源区域。

9. 发明授权

US5672539A Method for forming an improved field isolation structure using ozone enhanced oxidation and tapering 失效
标题翻译：使用臭氧增强氧化和渐缩形成改进的场隔离结构的方法
公开(公告)号：US5672539A
公开(公告)日：1997-09-30
申请号：US538732
申请日：1995-10-03
申请人： Randhir P. S. Thakur , J. Brett Rolfson , Fernando Gonzalez , John T. Moore
发明人： Randhir P. S. Thakur , J. Brett Rolfson , Fernando Gonzalez , John T. Moore
IPC分类号： H01L21/3105 , H01L21/316 , H01L21/762 , H01L21/76
CPC分类号： H01L21/31053 , H01L21/02238 , H01L21/02255 , H01L21/31658 , H01L21/76216 , Y10S438/978
摘要： A method for forming a field isolation structure and an improved field isolation structure are provided. The method includes forming a field oxide on a silicon substrate using an ozone enhanced local oxidation of silicon (LOCOS) process. Following formation of the field oxide a surface topography of the field oxide is sloped or tapered by ion milling, dry etching, reactive ion etching or chemical mechanical planarization. With an ozone enhanced LOCOS process, oxidation rates are increased and stress between the field oxide and substrate are reduced. This permits the formation of field isolation structures with reduced lateral encroachment and a smaller bird's beak area. In addition, the sloped topography of the field oxide permits a subsequently deposited conductive layer (e.g., polysilicon) to be etched without the formation of conductive stringers. During the etch process the active areas on the substrate can be protected with a sacrificial oxide or by only partially removing the LOCOS mask.
摘要翻译：提供了一种用于形成场隔离结构和改进的场隔离结构的方法。该方法包括使用臭氧增强的局部氧化硅（LOCOS）工艺在硅衬底上形成场氧化物。在形成场氧化物之后，场氧化物的表面形貌通过离子研磨，干蚀刻，反应离子蚀刻或化学机械平面化而倾斜或渐缩。通过臭氧增强的LOCOS工艺，氧化速率增加，场氧化物和衬底之间的应力降低。这允许形成具有减小的横向侵入和较小鸟喙面积的场隔离结构。此外，场氧化物的倾斜形貌允许随后沉积的导电层（例如，多晶硅）被蚀刻而不形成导电桁条。在蚀刻过程中，可以用牺牲氧化物或仅部分去除LOCOS掩模来保护衬底上的有源区域。

10. 发明授权

US5946588A Low temperature sub-atmospheric ozone oxidation process for making thin gate oxides 失效
标题翻译：用于制造薄栅氧化物的低温亚大气臭氧氧化工艺
公开(公告)号：US5946588A
公开(公告)日：1999-08-31
申请号：US779602
申请日：1997-01-07
申请人： Aftab Ahmad , Randhir P. S. Thakur , J. Brett Rolfson , Brian Benard
发明人： Aftab Ahmad , Randhir P. S. Thakur , J. Brett Rolfson , Brian Benard
IPC分类号： H01L21/28 , H01L21/316 , H01L21/762
CPC分类号： H01L21/28211 , H01L21/02238 , H01L21/02255 , H01L21/31662 , H01L21/76216
摘要： A process for making thin gate oxides comprising the layering of a semiconductor substrate with at least an oxide layer and a nitride layer. The layers are then patterned and etched, thereby exposing portions of the substrate. The substrate is then doped, thereby creating a channel stop region. The exposed portions of the substrate are oxidized, thereby creating a field oxide region. The oxide and nitride layers are removed, thereby exposing sites of active areas, and a gate oxide layer grown in an ozone-containing atmosphere.
摘要翻译：一种用于制造薄栅极氧化物的方法，包括至少具有氧化物层和氮化物层的半导体衬底的层叠。然后对这些层进行图案化和蚀刻，从而暴露衬底的部分。然后将衬底掺杂，从而形成通道停止区域。衬底的暴露部分被氧化，从而产生场氧化物区域。去除氧化物和氮化物层，从而暴露有源区的位置，以及在含臭氧的气氛中生长的栅极氧化物层。

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