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1. 发明申请

US20060019475A1 Method of depositing polysilicon 审中-公开
标题翻译：沉积多晶硅的方法
公开(公告)号：US20060019475A1
公开(公告)日：2006-01-26
申请号：US11234334
申请日：2005-09-23
申请人： Michael Nuttall , Er-Xuan Ping , Yongjun Hu
发明人： Michael Nuttall , Er-Xuan Ping , Yongjun Hu
IPC分类号： H01L21/20
CPC分类号： H01L21/28525 , C23C16/04 , C23C16/24 , H01L21/28562 , H01L21/31604 , H01L21/32051 , H01L21/76879 , H01L28/60 , H01L29/41775 , H01L29/41783 , H01L29/7834
摘要： A method of depositing polysilicon includes positioning a substrate within a chemical vapor deposition reactor. The substrate has an exposed substantially crystalline region and an exposed substantially amorphous region. A gaseous precursor comprising silicon is fed to the chemical vapor deposition reactor to provide a reactive atmosphere under conditions effective to substantially selectively deposit polysilicon on the crystalline region relative to the amorphous region. The reactive atmosphere during the depositing consists essentially of a gaseous silane precursor.
摘要翻译：沉积多晶硅的方法包括将衬底定位在化学气相沉积反应器内。衬底具有暴露的基本上结晶的区域和暴露的基本无定形区域。包含硅的气态前体被供给到化学气相沉积反应器，以在有效地相对于非晶区域在晶体区域上基本上选择性地沉积多晶硅的条件下提供反应性气氛。沉积期间的反应性气氛基本上由气态硅烷前体组成。

2. 发明申请

US20060019442A1 Method of forming a capacitor 失效
标题翻译：形成电容器的方法
公开(公告)号：US20060019442A1
公开(公告)日：2006-01-26
申请号：US11234328
申请日：2005-09-23
申请人： Michael Nuttall , Er-Xuan Ping , Yongjun Hu
发明人： Michael Nuttall , Er-Xuan Ping , Yongjun Hu
IPC分类号： H01L21/8242
CPC分类号： H01L21/28525 , C23C16/04 , C23C16/24 , H01L21/28562 , H01L21/31604 , H01L21/32051 , H01L21/76879 , H01L28/60 , H01L29/41775 , H01L29/41783 , H01L29/7834
摘要： A method of forming a capacitor includes forming a first capacitor electrode over a substrate. A substantially crystalline capacitor dielectric layer is formed over the first capacitor electrode. The substrate with the substantially crystalline capacitor dielectric layer is provided within a chemical vapor deposition reactor. Such substrate has an exposed substantially amorphous material. A gaseous precursor comprising silicon is fed to the chemical vapor deposition reactor under conditions effective to substantially selectively deposit polysilicon on the substantially crystalline capacitor dielectric layer relative to the exposed substantially amorphous material, and the polysilicon is formed into a second capacitor electrode.
摘要翻译：形成电容器的方法包括在衬底上形成第一电容器电极。在第一电容器电极上形成基本上结晶的电容器电介质层。具有基本上结晶的电容器电介质层的衬底设置在化学气相沉积反应器内。这种衬底具有暴露的基本无定形的材料。包含硅的气态前体在有效基本上选择性地在基本上结晶的电容器电介质层上沉积多晶硅相对于暴露的基本无定形材料的条件下被馈送到化学气相沉积反应器，并且多晶硅形成第二电容器电极。

3. 发明授权

US07989864B2 Methods for enhancing capacitors having roughened features to increase charge-storage capacity 失效
标题翻译：用于增强具有粗糙特征的电容器以增加电荷存储容量的方法
公开(公告)号：US07989864B2
公开(公告)日：2011-08-02
申请号：US12538779
申请日：2009-08-10
申请人： Randhir P. S. Thakur , Garry A. Mercaldi , Michael Nuttall , Shenline Chen , Er-Xuan Ping
发明人： Randhir P. S. Thakur , Garry A. Mercaldi , Michael Nuttall , Shenline Chen , Er-Xuan Ping
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： G11C11/404 , G11C17/16 , H01L21/28568 , H01L21/76888 , H01L27/1085 , H01L27/10852 , H01L27/11502 , H01L27/11507 , H01L28/60 , H01L28/82 , H01L28/84
摘要： Structures and methods for making a semiconductor structure are discussed. The semiconductor structure includes a rough surface having protrusions formed from an undoped silicon film. If the semiconductor structure is a capacitor, the protrusions help to increase the capacitance of the capacitor. The semiconductor structure also includes a relatively smooth surface abutting the rough surface, wherein the relatively smooth surface is formed from a polycrystalline material.
摘要翻译：讨论了制造半导体结构的结构和方法。半导体结构包括具有由未掺杂硅膜形成的突起的粗糙表面。如果半导体结构是电容器，则突起有助于增加电容器的电容。半导体结构还包括与粗糙表面邻接的相对光滑的表面，其中相对光滑的表面由多晶材料形成。

4. 发明授权

US07923322B2 Method of forming a capacitor 失效
标题翻译：形成电容器的方法
公开(公告)号：US07923322B2
公开(公告)日：2011-04-12
申请号：US11234328
申请日：2005-09-23
申请人： Michael Nuttall , Er-Xuan Ping , Yongjun Jeff Hu
发明人： Michael Nuttall , Er-Xuan Ping , Yongjun Jeff Hu
IPC分类号： H01L21/8242
CPC分类号： H01L21/28525 , C23C16/04 , C23C16/24 , H01L21/28562 , H01L21/31604 , H01L21/32051 , H01L21/76879 , H01L28/60 , H01L29/41775 , H01L29/41783 , H01L29/7834
摘要： A method of forming a capacitor includes forming a first capacitor electrode over a substrate. A substantially crystalline capacitor dielectric layer is formed over the first capacitor electrode. The substrate with the substantially crystalline capacitor dielectric layer is provided within a chemical vapor deposition reactor. Such substrate has an exposed substantially amorphous material. A gaseous precursor comprising silicon is fed to the chemical vapor deposition reactor under conditions effective to substantially selectively deposit polysilicon on the substantially crystalline capacitor dielectric layer relative to the exposed substantially amorphous material, and the polysilicon is formed into a second capacitor electrode.
摘要翻译：形成电容器的方法包括在衬底上形成第一电容器电极。在第一电容器电极上形成基本上结晶的电容器电介质层。具有基本上结晶的电容器电介质层的衬底设置在化学气相沉积反应器内。这种衬底具有暴露的基本无定形的材料。包含硅的气态前体在有效基本上选择性地在基本上结晶的电容器电介质层上沉积多晶硅相对于暴露的基本无定形材料的条件下被馈送到化学气相沉积反应器，并且多晶硅形成第二电容器电极。

5. 发明授权

US07034353B2 Methods for enhancing capacitors having roughened features to increase charge-storage capacity 失效
公开(公告)号：US07034353B2
公开(公告)日：2006-04-25
申请号：US09965240
申请日：2001-09-26
申请人： Randhir P. S. Thakur , Garry A. Mercaldi , Michael Nuttall , Shenlin Chen , Er-Xuan Ping
发明人： Randhir P. S. Thakur , Garry A. Mercaldi , Michael Nuttall , Shenlin Chen , Er-Xuan Ping
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119
CPC分类号： G11C11/404 , G11C17/16 , H01L21/28568 , H01L21/76888 , H01L27/1085 , H01L27/10852 , H01L27/11502 , H01L27/11507 , H01L28/60 , H01L28/82 , H01L28/84
摘要： Structures and methods for making a semiconductor structure are discussed. The semiconductor structure includes a rough surface having protrusions formed from an undoped silicon film. If the semiconductor structure is a capacitor, the protrusions help to increase the capacitance of the capacitor. The semiconductor structure also includes a relatively smooth surface abutting the rough surface, wherein the relatively smooth surface is formed from a polycrystalline material.

6. 发明授权

US07049231B2 Methods of forming capacitors 失效
标题翻译：形成电容器的方法
公开(公告)号：US07049231B2
公开(公告)日：2006-05-23
申请号：US10863046
申请日：2004-06-07
申请人： Michael Nuttall , Er-Xuan Ping , Yongjun Jeff Hu
发明人： Michael Nuttall , Er-Xuan Ping , Yongjun Jeff Hu
IPC分类号： H01L21/00
CPC分类号： H01L21/28525 , C23C16/04 , C23C16/24 , H01L21/28562 , H01L21/31604 , H01L21/32051 , H01L21/76879 , H01L28/60 , H01L29/41775 , H01L29/41783 , H01L29/7834
摘要： In but one aspect of the invention, a method of depositing polysilicon comprises providing a substrate within a chemical vapor deposition reactor, with the substrate having an exposed substantially crystalline region and an exposed substantially amorphous region. A gaseous precursor comprising silicon is fed to the chemical vapor deposition reactor under conditions effective to substantially selectively deposit polysilicon on the crystalline region and not the amorphous region. In another aspect a method of fabricating a field effect transistor on a substrate comprises forming a gate dielectric layer and a gate over semiconductive material. Doped source/drain regions are formed within semiconductive material laterally proximate the gate. Substantially amorphous insulating material is formed over and laterally proximate the gate. The substrate is provided within a chemical vapor deposition reactor. A gaseous precursor comprising silicon is fed to the chemical vapor deposition reactor under conditions effective to substantially selectively deposit polysilicon on the source/drain regions and not on substantially amorphous material, and forming elevated source/drains on the doped source/drain regions. In but another aspect, a method of forming a contact to a substrate is disclosed. A contact opening is etched through amorphous insulating material over a node location ultimately comprising an outwardly exposed substantially crystalline surface. Within a chemical vapor deposition reactor, a gaseous precursor comprising silicon is provided under conditions effective to substantially selectively deposit polysilicon on the outwardly exposed crystalline node location surface and not on the insulating material. Capacitor forming methods are also disclosed.
摘要翻译：在本发明的一个方面，沉积多晶硅的方法包括在化学气相沉积反应器内提供衬底，衬底具有暴露的基本上结晶的区域和暴露的基本无定形区域。包含硅的气体前体在有效基本上选择性地在结晶区域而非非晶区域上沉积多晶硅的条件下被供给到化学气相沉积反应器。在另一方面，在衬底上制造场效应晶体管的方法包括形成栅极介电层和半导体材料上的栅极。掺杂的源极/漏极区域在靠近栅极的半导体材料内形成。基本上非晶绝缘材料形成在栅极上方和侧向靠近栅极。衬底设置在化学气相沉积反应器内。包含硅的气体前体在有效地基本上选择性地在源极/漏极区域上沉积多晶硅而不是基本上无定形材料的条件下被馈送到化学气相沉积反应器，并且在掺杂源极/漏极区上形成升高的源极/漏极。在另一方面，公开了一种形成与基板的接触的方法。接触开口在最终包括向外暴露的基本上结晶的表面的节点位置上通过非晶绝缘材料蚀刻。在化学气相沉积反应器内，在有效地基本上选择性地将多晶硅沉积在外露的晶体结点位置表面而不是在绝缘材料上的条件下提供包含硅的气态前体。还公开了电容器形成方法。

7. 发明授权

US06797558B2 Methods of forming a capacitor with substantially selective deposite of polysilicon on a substantially crystalline capacitor dielectric layer 失效
标题翻译：在基本上结晶的电容器电介质层上形成具有基本上选择性沉积多晶硅的电容器的方法
公开(公告)号：US06797558B2
公开(公告)日：2004-09-28
申请号：US10050426
申请日：2002-01-15
申请人： Michael Nuttall , Er-Xuan Ping , Yongjun Jeff Hu
发明人： Michael Nuttall , Er-Xuan Ping , Yongjun Jeff Hu
IPC分类号： H01L218242
CPC分类号： H01L21/28525 , C23C16/04 , C23C16/24 , H01L21/28562 , H01L21/31604 , H01L21/32051 , H01L21/76879 , H01L28/60 , H01L29/41775 , H01L29/41783 , H01L29/7834
摘要： A method of forming a capacitor includes forming a first capacitor electrode over a substrate. A substantially crystalline capacitor dielectric layer is formed over the first capacitor electrode. The substrate with substantially crystalline capacitor dielectric layer is provided within a chemical vapor deposition reactor. A gaseous precursor comprising silicon is fed to the chemical vapor deposition reactor under conditions effective to substantially selectively deposit polysilicon on the substantially crystalline capacitor dielectric region, and the polysilicon is formed into a second capacitor electrode.
摘要翻译：形成电容器的方法包括在衬底上形成第一电容器电极。在第一电容器电极上形成基本上结晶的电容器电介质层。具有基本上结晶的电容器介电层的基板设置在化学气相沉积反应器内。包含硅的气体前体在有效基本上选择性地在基本上结晶的电容器介电区域上沉积多晶硅的条件下被馈送到化学气相沉积反应器，并且多晶硅形成为第二电容器电极。

8. 发明授权

US07576380B2 Methods for enhancing capacitors having roughened features to increase charge-storage capacity 失效
公开(公告)号：US07576380B2
公开(公告)日：2009-08-18
申请号：US11502090
申请日：2006-08-09
申请人： Randhir P. S. Thakur , Garry A. Mercaldi , Michael Nuttall , Shenline Chen , Er-Xuan Ping
发明人： Randhir P. S. Thakur , Garry A. Mercaldi , Michael Nuttall , Shenline Chen , Er-Xuan Ping
IPC分类号： H01L27/108 , H01L29/76 , H01L29/94 , H01L31/119 , H01L29/00
CPC分类号： G11C11/404 , G11C17/16 , H01L21/28568 , H01L21/76888 , H01L27/1085 , H01L27/10852 , H01L27/11502 , H01L27/11507 , H01L28/60 , H01L28/82 , H01L28/84
摘要： Structures and methods for making a semiconductor structure are discussed. The semiconductor structure includes a rough surface having protrusions formed from an undoped silicon film. If the semiconductor structure is a capacitor, the protrusions help to increase the capacitance of the capacitor. The semiconductor structure also includes a relatively smooth surface abutting the rough surface, wherein the relatively smooth surface is formed from a polycrystalline material.

9. 发明授权

US06458699B1 Methods of forming a contact to a substrate 有权
标题翻译：与基材形成接触的方法
公开(公告)号：US06458699B1
公开(公告)日：2002-10-01
申请号：US09843116
申请日：2001-04-24
申请人： Michael Nuttall , Er-Xuan Ping , Yongjun Jeff Hu
发明人： Michael Nuttall , Er-Xuan Ping , Yongjun Jeff Hu
IPC分类号： H01L2144
CPC分类号： H01L29/41783 , C23C16/04 , C23C16/24 , H01L21/28525 , H01L21/28562 , H01L21/76879 , H01L29/41775 , H01L29/7834
摘要： A method of forming a contact to a substrate includes forming insulating material comprising a substantially amorphous outer surface over a substrate node location. A contact opening is etched through the insulating material over the node location. The node location comprises an outwardly exposed substantially crystalline metal silicide surface. The substrate with outwardly exposed substantially crystalline metal silicide node location surface is provided within a chemical vapor deposition reactor. A gaseous precursor including silicon is fed to the chemical vapor deposition reactor under conditions effective to substantially selectively deposit polysilicon on the outwardly exposed substantially crystalline metal silicide node location surface and not on the insulating material.
摘要翻译：形成与衬底的接触的方法包括形成在衬底节点位置上包括基本无定形的外表面的绝缘材料。通过节点位置处的绝缘材料蚀刻接触开口。节点位置包括向外暴露的基本上结晶的金属硅化物表面。具有向外暴露的基本上结晶的金属硅化物结点位置表面的衬底设置在化学气相沉积反应器内。包括硅的气体前体在有效地基本上选择性地在多晶硅上沉积在外露的基本上结晶的金属硅化物结点位置表面而不是绝缘材料上的条件下被供给到化学气相沉积反应器。

10. 发明授权

US6159852A Method of depositing polysilicon, method of fabricating a field effect transistor, method of forming a contact to a substrate, method of forming a capacitor 失效
标题翻译：沉积多晶硅的方法，制造场效应晶体管的方法，与衬底形成接触的方法，形成电容器的方法
公开(公告)号：US6159852A
公开(公告)日：2000-12-12
申请号：US23239
申请日：1998-02-13
申请人： Michael Nuttall , Er-Xuan Ping , Yongjun Jeff Hu
发明人： Michael Nuttall , Er-Xuan Ping , Yongjun Jeff Hu
IPC分类号： C23C16/04 , C23C16/24 , H01L21/285 , H01L21/768 , H01L29/417 , H01L29/78 , H01L21/4763
CPC分类号： H01L29/41783 , C23C16/04 , C23C16/24 , H01L21/28525 , H01L21/28562 , H01L21/76879 , H01L29/41775 , H01L29/7834
摘要： In a method of depositing polysilicon comprises providing a substrate within a chemical vapor deposition reactor, with the substrate having an exposed substantially crystalline region and an exposed substantially amorphous region. A gaseous precursor comprising silicon is fed to the chemical vapor deposition reactor under conditions effective to selectively deposit polysilicon on the crystalline region and not the amorphous region. In another aspect a method of fabricating a field effect transistor on a substrate comprises forming a gate dielectric layer and a gate over semiconductive material. A gaseous precursor comprising silicon is fed to the chemical vapor deposition reactor under conditions effective to substantially selectively deposit polysilicon on the source/drain regions and not on amorphous material, and forming elevated source/drains on the doped source/drain regions. In another aspect, a method of forming a contact to a substrate is disclosed. A contact opening is etched through amorphous insulating material over a node location ultimately comprising an outwardly exposed substantially crystalline surface. Within a chemical vapor deposition reactor, a gaseous precursor comprising silicon is provided under conditions effective to selectively deposit polysilicon on the outwardly exposed crystalline node location surface and not on the insulating material.
摘要翻译：在沉积多晶硅的方法中包括在化学气相沉积反应器内提供衬底，其中衬底具有暴露的基本上结晶的区域和暴露的基本非晶区域。包含硅的气体前体在有效选择性地在结晶区域而非非晶区域上沉积多晶硅的条件下进料至化学气相沉积反应器。在另一方面，在衬底上制造场效应晶体管的方法包括形成栅极介电层和半导体材料上的栅极。包含硅的气体前体在有效基本上选择性地在源极/漏极区域上而不是无定形材料上沉积多晶硅并且在掺杂源极/漏极区域上形成升高的源极/漏极的条件下被馈送到化学气相沉积反应器。另一方面，公开了一种形成与基板的接触的方法。接触开口在最终包括向外暴露的基本上结晶的表面的节点位置上通过非晶绝缘材料蚀刻。在化学气相沉积反应器内，在有效选择性地将多晶硅沉积在外露的晶体结点位置表面而不是在绝缘材料上的条件下提供了包含硅的气态前体。

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