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    • 42. 发明授权
    • Image input apparatus having interchangeable image pickup device and pan head
    • 图像输入装置具有可互换的图像拾取装置和盘头
    • US06445410B2
    • 2002-09-03
    • US08547201
    • 1995-10-24
    • Kenji Kawano
    • Kenji Kawano
    • H04N5232
    • H04N5/23209H04N7/142
    • An image input apparatus has a pan head for mounting an image pickup device thereon and for changing the image pickup direction of the image pickup device. The image pickup device has an engaging device, and control terminals capable of transmitting specification information about an operation of the pan head from the image pickup device to the pan head. The pan head has a holding device to be engaged with the engaging device so as to interchangeably hold the image pickup device, identifying terminals capable of receiving the specification information when the image pickup device is held by the holding device, and a selection circuit for selecting an operation of the pan head corresponding to the held image pickup device based on the received specification information.
    • 图像输入装置具有用于在其上安装图像拾取装置并用于改变图像拾取装置的图像拾取方向的摇摄头。 图像拾取装置具有接合装置,以及控制端子,其能够将关于盘头的操作的规格信息从图像拾取装置发送到盘头。 摇头具有与接合装置接合的保持装置,以便可互换地保持图像拾取装置,当保持装置保持图像拾取装置时能够接收指定信息的识别终端;以及选择电路 基于所接收的指定信息,对应于所保持的图像拾取装置的平移头的操作。
    • 46. 发明授权
    • Method of testing integrated circuit including a DRAM
    • 包括DRAM的集成电路测试方法
    • US06228666B1
    • 2001-05-08
    • US09391000
    • 1999-09-07
    • Kenji Kawano
    • Kenji Kawano
    • H01L2166
    • G11C29/835G11C29/44H01L23/544H01L24/05H01L24/06H01L2223/5444H01L2223/54473H01L2224/05554H01L2924/12042H01L2924/13091H01L2924/14H01L2924/00
    • A method of testing a semiconductor integrated circuit device including a defective chip recognition circuit unit so that in testing a DRAM unit, if the DRAM unit cannot be made to conform to a specification, even using a redundancy circuit, defective data can be written in the defective chip recognition circuit unit. The method includes deciding whether a DRAM unit conforms and deciding whether a DRAM unit judged imperfect can be conformed using a redundancy circuit; deciding whether the semiconductor integrated circuit device is defective when the DRAM unit has been judged defective and writing the defective decision data into a defective chip recognition circuit unit; reading the defective decision data in the defective chip recognition circuit unit and deciding whether to test the logic unit; testing the logic unit when the test of the logic unit is to be performed; and deciding whether the logic unit conforms.
    • 一种测试包括有缺陷的芯片识别电路单元的半导体集成电路装置的方法,使得在测试DRAM单元时,如果不能使DRAM单元符合规范,即使使用冗余电路,也可以将错误数据写入 有缺陷的芯片识别电路单元。 该方法包括:确定DRAM单元是否符合并决定是否可以使用冗余电路来确定判断不完整的DRAM单元; 当DRAM单元已被判定为有缺陷并将缺陷判定数据写入缺陷芯片识别电路单元时,判断半导体集成电路器件是否有缺陷; 读取有缺陷的芯片识别电路单元中的有缺陷的判定数据,并决定是否测试逻辑单元; 当要执行逻辑单元的测试时测试逻辑单元; 并决定逻辑单元是否符合要求。
    • 47. 发明授权
    • Ultra high-speed semiconductor optical modulator with traveling-wave
electrode
    • 具有行波电极的超高速半导体光调制器
    • US6160654A
    • 2000-12-12
    • US360759
    • 1999-07-26
    • Kenji Kawano
    • Kenji Kawano
    • G02F1/015G02F1/017
    • B82Y20/00G02F1/01708G02F2001/0159G02F2201/127
    • A wideband semiconductor electro-absorption optical modulator including a semiconductor core shorter in absorption-peak wavelength than a wavelength of optical signal, and an electrode for applying an electric signal to absorb the optical signal by shifting the absorption-peak wavelength to a long wavelength region when a voltage is applied, wherein an electric signal input port and an electric signal output port are disposed so that the electrode is constructed in the form of a traveling-wave electrode, and a total thickness of non-doped layers including the semiconductor core is reduced to decrease a driving voltage. Degradation of optical modulation bandwidth and reflection characteristics of the electric signal caused by mismatching of characteristic impedance to an outer circuit are reduced by decreasing an interaction length of the electric signal and the optical signal. Further, mismatching of characteristic impedance is corrected by adjusting a doping concentration of a p-type or n-type doped layer located above or beneath the semiconductor core.
    • 一种宽带半导体电吸收光调制器,其包括具有比光信号的波长更短的吸收峰值波长的半导体芯片,以及用于通过将吸收峰值波长移位到长波长区域来施加电信号以吸收光信号的电极 当施加电压时,其中设置电信号输入端口和电信号输出端口,使得电极构造为行波电极的形式,并且包括半导体芯的非掺杂层的总厚度为 降低驱动电压。 通过减小电信号和光信号的相互作用长度,降低由特性阻抗与外部电路失配引起的电信号的光调制带宽和反射特性的降低。 此外,通过调整位于半导体芯上方或下方的p型或n型掺杂层的掺杂浓度来校正特性阻抗的失配。
    • 49. 发明授权
    • Exposure mask and method and apparatus for manufacturing the same
    • 曝光掩模及其制造方法和装置
    • US5907393A
    • 1999-05-25
    • US729592
    • 1996-10-11
    • Kenji KawanoShinichi ItoIwao HigashikawaMasamitsu ItohTakashi KamoHiroaki HazamaTakayuki Iwamatsu
    • Kenji KawanoShinichi ItoIwao HigashikawaMasamitsu ItohTakashi KamoHiroaki HazamaTakayuki Iwamatsu
    • G03F1/32G03F1/68G01N21/00
    • G03F1/32G03F1/68
    • This invention provides an exposure mask including a translucent film formed on a light-transmitting substrate and having a mask pattern, and a stabilized region formed in the boundary between the light-transmitting substrate and the translucent film or on at least the surface of the translucent film to prevent variations in physical properties of the translucent film. In addition, this invention provides a method of manufacturing an exposure mask, including the steps of forming a translucent film on a light-transmitting substrate, forming a photosensitive resin film on the translucent film, forming a photosensitive resin pattern by exposing the photosensitive resin film to a radiation or a charged particle beam, removing an exposed portion of the translucent film by using the photosensitive resin pattern as a mask, removing the photosensitive resin pattern, and forming a stabilized region in the boundary between the light-transmitting substrate and the translucent film or on at least the surface of the translucent film before the step of forming the photosensitive resin film or after the step of forming the photosensitive resin pattern. Also, this invention provides an apparatus for manufacturing an exposure mask, including a light source for radiating light containing at least an exposure wavelength onto a translucent film formed on a light-transmitting substrate, a photodetecting unit for detecting light emitted from the light source and transmitted through or reflected by the translucent film, and a measuring unit for measuring the characteristic of the translucent film from the light detected by the photodetecting unit.
    • 本发明提供一种曝光掩模,其包括形成在透光基板上并具有掩模图案的半透明膜,以及形成在透光基板和半透膜之间的边界中的至少半透明的表面的稳定区域 膜以防止半透明膜的物理性质的变化。 此外,本发明提供一种制造曝光掩模的方法,包括以下步骤:在透光性基板上形成半透膜,在半透膜上形成感光性树脂膜,通过使感光性树脂膜曝光,形成感光性树脂图案 通过使用感光性树脂图案作为掩模去除透光性膜的露出部分,除去感光性树脂图案,在透光性基板与透光性的界面之间形成稳定区域 或在形成感光性树脂膜的步骤之前或在形成感光性树脂图案的步骤之后,至少在半透明膜的表面上。 另外,本发明提供了一种用于制造曝光掩模的装置,包括用于将至少包含曝光波长的光发射到形成在透光基板上的半透明膜上的光源,用于检测从光源发射的光的光电检测单元和 通过透光膜透射或反射,以及测量单元,用于根据由光检测单元检测到的光来测量半透膜的特性。