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热词
    • 2. 发明授权
    • Method for manufacturing a semiconductor device and apparatus for manufacturing a semiconductor device
    • 半导体装置的制造方法以及半导体装置的制造装置
    • US07018932B2
    • 2006-03-28
    • US10377597
    • 2003-03-04
    • Shinichi ItoTatsuhiko HigashikiKatsuya OkumuraKenji KawanoSoichi Inoue
    • Shinichi ItoTatsuhiko HigashikiKatsuya OkumuraKenji KawanoSoichi Inoue
    • H01L21/027G03F9/00
    • G03F7/70625G03F7/70633G03F7/70641G03F7/70675H01J2237/30438
    • A method for manufacturing a semiconductor device including, forming a photosensitive-film on a substrate, carrying the substrate on which the photosensitive-film is formed, to an exposure device provided with a mask in which an on-mask-inspection-mark and an on-mask-device-pattern are formed, selectively exposing the photosensitive-film to light to transfer the on-mask-inspection-mark to the photosensitive-film to form a latent-image of the inspection-mark on the photosensitive-film, heating at least that area of the photosensitive-film in which the latent-image of the inspection-mark is formed, measuring the inspection-mark, changing set-values for the exposure device used for the selective exposure, on the basis of result of the measurement so that exposure conditions conform to the set-values, exposing the photosensitive-film on the basis of the changed set-values to transfer the on-mask-device-pattern to the photosensitive-film to form a latent image of the device-pattern on the photosensitive-film, heating an entire surface of the photosensitive-film, and developing the photosensitive-film.
    • 一种半导体器件的制造方法,其特征在于,在将基板上形成有感光膜的基板上形成感光膜的制造方法,设置在具有掩模检查标记和掩模检查标记的掩模的曝光装置 形成掩模装置图案,选择性地将感光膜曝光以将掩模检查标记转印到感光膜上,以在感光膜上形成检查标记的潜像, 至少加热其中形成有检查标记的潜像的感光膜的面积,测量检查标记,改变用于选择性曝光的曝光装置的设定值,基于 所述测量使得曝光条件符合设定值,基于改变的设定值曝光感光膜以将掩模设备图案转印到感光膜上以形成该设备的潜像 p图案在p 感光膜,加热感光膜的整个表面,并显影感光膜。