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    • 1. 发明申请
    • REFLECTIVE-TYPE MASK
    • 反射型面膜
    • US20090148781A1
    • 2009-06-11
    • US12329126
    • 2008-12-05
    • Takashi KAMOOsamu SugaToshihiko Tanaka
    • Takashi KAMOOsamu SugaToshihiko Tanaka
    • G03F1/00
    • G03F1/24B82Y10/00B82Y40/00G03F1/58
    • A reflective-type mask having a main surface including a pattern region in the main surface, the pattern region including a multilayer reflective film which reflects the exposure light and a first absorber pattern on the multilayer reflective film, the first absorber pattern including a pattern which absorbs the exposure light and corresponds to a pattern to be formed on a wafer, a light shielding region in the main surface for preventing a region on the wafer excluding a predetermined region from being irradiated with the exposure light when the main surface is irradiated with the exposure light for transferring the first absorber pattern to the predetermined region, the light shielding region including a second absorber pattern having a lower reflectivity to the exposure light than the first absorber pattern and being provided in a position differing from a position in which the first absorber pattern is provided.
    • 一种反射型掩模,其具有包括主表面中的图案区域的主表面,所述图案区域包括反射所述曝光光的多层反射膜和所述多层反射膜上的第一吸收体图案,所述第一吸收体图案包括图案, 吸收曝光光,并且对应于要在晶片上形成的图案,主表面上的遮光区域,用于防止当主表面被照射时,除了预定区域之外的晶片上的区域被照射曝光 用于将第一吸收体图案转印到预定区域的曝光光,所述遮光区域包括与所述第一吸收体图案相比对所述曝光光具有较低反射率的第二吸收体图案,并且设置在与所述第一吸收体 提供图案。
    • 2. 发明授权
    • Exposure mask and method and apparatus for manufacturing the same
    • 曝光掩模及其制造方法和装置
    • US5728494A
    • 1998-03-17
    • US730017
    • 1996-10-11
    • Kenji KawanoShinichi ItoIwao HigashikawaMasamitsu ItohTakashi KamoHiroaki HazamaTakayuki Iwamatsu
    • Kenji KawanoShinichi ItoIwao HigashikawaMasamitsu ItohTakashi KamoHiroaki HazamaTakayuki Iwamatsu
    • G03F1/32G03F1/68G03F9/00
    • G03F1/32G03F1/68
    • This invention provides an exposure mask including a translucent film formed on a light-transmitting substrate and having a mask pattern, and a stabilized region formed in the boundary between the light-transmitting substrate and the translucent film or on at least the surface of the translucent film to prevent variations in physical properties of the translucent film. In addition, this invention provides a method of manufacturing an exposure mask, including the steps of forming a translucent film on a light-transmitting substrate, forming a photosensitive resin film on the translucent film, forming a photosensitive resin pattern by exposing the photosensitive resin film to a radiation or a charged particle beam, removing an exposed portion of the translucent film by using the photosensitive resin pattern as a mask, removing the photosensitive resin pattern, and forming a stabilized region in the boundary between the light-transmitting substrate and the translucent film or on at least the surface of the translucent film before the step of forming the photo-sensitive resin film or after the step of forming the photosensitive resin pattern. Also, this invention provides an apparatus for manufacturing an exposure mask.
    • 本发明提供一种曝光掩模,其包括形成在透光基板上并具有掩模图案的半透明膜,以及形成在透光基板和半透膜之间的边界中的至少半透明的表面的稳定区域 膜以防止半透明膜的物理性质的变化。 此外,本发明提供一种制造曝光掩模的方法,包括以下步骤:在透光性基板上形成半透膜,在半透膜上形成感光性树脂膜,通过使感光性树脂膜曝光,形成感光性树脂图案 通过使用感光性树脂图案作为掩模去除透光性膜的露出部分,除去感光性树脂图案,在透光性基板与透光性的界面之间形成稳定区域 或在形成感光树脂膜的步骤之前或在形成感光性树脂图案的步骤之后,至少在半透明膜的表面上。 此外,本发明提供了一种用于制造曝光掩模的装置。
    • 3. 发明授权
    • Method for detecting an oxygen concentration and a method for
controlling an air-to-fuel ratio based on the detected oxygen
concentration
    • 用于检测氧浓度的方法和基于检测到的氧浓度来控制空燃比的方法
    • US4553424A
    • 1985-11-19
    • US477845
    • 1983-03-22
    • Shigenori SakuraiTakashi KamoShirou Kimura
    • Shigenori SakuraiTakashi KamoShirou Kimura
    • F02D41/14F02D41/24G01N27/406G01N27/04
    • F02D41/1476F02D41/1455F02D41/1479F02D41/2496G01N27/4065F02D41/1456
    • A method for detecting the oxygen concentration of a gas to be measured is disclosed using the limiting current type oxygen sensor. The method is characterized in that the relationship of an inclined straight line between the voltages applied to the oxygen sensor and the currents outputted therefrom is determined in such a manner that the inclined straight line may pass through the flat portions of the limiting current in the voltage-current characteristics curves at the different oxygen concentrations. The relationship between the outputted currents and the oxygen concentrations at the flat portion is such that when a given magnitude of voltage is applied to the oxygen sensor to cause it to output a current, a voltage which corresponds to this current at the inclined straight line is determined. The voltage thus determined is applied to the oxygen sensor to cause it to output a current. The oxygen concentration is determined from the current thus outputted with reference to the outputted current-oxygen concentration conversion straight line. There is also disclosed a method for controlling the air-to-fuel ratio of a gas from an engine using the above voltage-current characteristic curves, inclined straight line and outputted current-oxygen concentration.
    • 公开了使用极限电流型氧传感器来检测待测气体的氧浓度的方法。 该方法的特征在于,施加到氧传感器的电压和从其输出的电流之间的倾斜直线的关系以这样的方式确定:倾斜的直线可以通过电压中的限制电流的平坦部分 - 不同氧浓度下的电流特性曲线。 输出电流和平坦部分的氧浓度之间的关系使得当给氧传感器施加给定的电压以使其输出电流时,在倾斜直线处对应于该电流的电压为 决心。 将如此确定的电压施加到氧传感器以使其输出电流。 从根据输出的电流 - 氧浓度转换直线输出的电流求出氧浓度。 还公开了使用上述电压 - 电流特性曲线,斜直线和输出的电流 - 氧浓度来控制来自发动机的气体的空燃比的方法。
    • 7. 发明申请
    • METHOD OF CORRECTING DEFECTS IN A REFLECTION-TYPE MASK AND MASK-DEFECT CORRECTION APPARATUS
    • 在反射型掩模和掩模缺陷校正装置中校正缺陷的方法
    • US20120307218A1
    • 2012-12-06
    • US13423644
    • 2012-03-19
    • Takashi KAMO
    • Takashi KAMO
    • G03B27/68
    • G03F1/24G03F1/72G03F7/70283G03F7/70908
    • According to one embodiment, a method of correcting defects in a reflection-type mask is provided, which comprises acquiring a mask-pattern image of the mask, by using a mask-defect correction apparatus includes a mechanism configured to detect a defect in the mask and a mechanism configured to correct the defect, acquiring a simulated wafer-transfer optical image for the mask, by using an AIMS configured to simulate a wafer-transfer optical image, thereby to determine whether the mask is defective, locating a mask defect, in a mask-pattern image acquired by the mask-defect correction apparatus, by referring to the simulated pattern image acquired by the AIMS, and correcting the defect by the mask-defect correction apparatus, on the basis of the position of the mask defect, thus detected.
    • 根据一个实施例,提供了一种校正反射型掩模中的缺陷的方法,其包括通过使用掩模缺陷校正装置获取掩模的掩模图案图像,所述掩模缺陷校正装置包括被配置为检测掩模中的缺陷的机构 以及被配置为校正所述缺陷的机构,通过使用被配置为模拟晶片转移光学图像的AIMS来获取所述掩模的模拟晶片转移光学图像,从而确定所述掩模是否有缺陷,将掩模缺陷定位在 由掩模缺陷校正装置获取的掩模图案图像,通过参考由AIMS获取的模拟图案图像,并且基于掩模缺陷校正装置校正缺陷,基于掩模缺陷的位置,从而 检测到。
    • 8. 发明申请
    • REFLECTION-TYPE EXPOSURE MASK AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
    • 反射型曝光掩模和制造半导体器件的方法
    • US20110020737A1
    • 2011-01-27
    • US12749250
    • 2010-03-29
    • Takashi KamoOsamu Suga
    • Takashi KamoOsamu Suga
    • G03F1/00G03F7/20
    • B82Y10/00B82Y40/00G03F1/24G03F1/26G03F7/70283
    • A reflection-type exposure mask includes a multilayer reflective film in a main surface and serving as a high reflective region to an exposure light, and an absorber pattern on the multilayer reflective film and serving as a low reflective region to the exposure light, wherein a phase difference between reflection lights of the exposure light from the multilayer reflective film and the absorber pattern is in a range of 180°±10°, and the absorber pattern includes first and second linear patterns having longitudinal directions intersecting at right angles, contrast values of optical images of the first and second linear patterns formed on a wafer is to be 0.6 or more when one of the longitudinal directions of the first and second patterns agree with an incident direction of the exposure light to the main surface viewed from above the main surface.
    • 反射型曝光掩模包括主表面中的多层反射膜并且用作曝光用光的高反射区域,并且在多层反射膜上形成作为曝光用光的低反射区域的吸收体图案,其中, 来自多层反射膜的曝光光的反射光和吸收体图案之间的相位差在180°±10°的范围内,吸收体图案包括纵向相交成直角的第一和第二线状图案,对比度值 形成在晶片上的第一和第二线状图案的光学图像在第一和第二图案的纵向方向之一与主表面上方观察到的曝光的入射方向一致时为0.6以上 。
    • 9. 发明授权
    • Exposure mask and method and apparatus for manufacturing the same
    • 曝光掩模及其制造方法和装置
    • US5629115A
    • 1997-05-13
    • US583857
    • 1996-01-11
    • Kenji KawanoShinichi ItoIwao HigashikawaMasamitsu ItohTakashi KamoHiroaki HazamaTakayuki Iwamatsu
    • Kenji KawanoShinichi ItoIwao HigashikawaMasamitsu ItohTakashi KamoHiroaki HazamaTakayuki Iwamatsu
    • G03F1/32G03F1/68G03F9/00
    • G03F1/32G03F1/68
    • This invention provides an exposure mask including a translucent film formed on a light-transmitting substrate and having a mask pattern, and a stabilized region formed in the boundary between the light-transmitting substrate and the translucent film or on at least the surface of the translucent film to prevent variations in physical properties of the translucent film. In addition, this invention provides a method of manufacturing an exposure mask, including the steps of forming a translucent film on a light-transmitting substrate, forming a photosensitive resin film on the translucent film, forming a photosensitive resin pattern by exposing the photosensitive resin film to a radiation or a charged particle beam, removing an exposed portion of the translucent film by using the photosensitive resin pattern as a mask, removing the photosensitive resin pattern, and forming a stabilized region in the boundary between the light-transmitting substrate and the translucent film or on at least the surface of the translucent film before the step of forming the photosensitive resin film or after the step of forming the photosensitive resin pattern. Also, this invention provides an apparatus for manufacturing an exposure mask, including a light source for radiating light containing at least an exposure wavelength onto a translucent film formed on a light-transmitting substrate, a photodetecting unit for detecting light emitted from the light source and transmitted through or reflected by the translucent film, and a measuring unit for measuring the characteristic of the translucent film from the light detected by the photodetecting unit.
    • 本发明提供一种曝光掩模,其包括形成在透光基板上并具有掩模图案的半透明膜,以及形成在透光基板和半透膜之间的边界中的至少半透明的表面的稳定区域 膜以防止半透明膜的物理性质的变化。 此外,本发明提供一种制造曝光掩模的方法,包括以下步骤:在透光性基板上形成半透膜,在半透膜上形成感光性树脂膜,通过使感光性树脂膜曝光,形成感光性树脂图案 通过使用感光性树脂图案作为掩模去除透光性膜的露出部分,除去感光性树脂图案,在透光性基板与透光性的界面之间形成稳定区域 或在形成感光性树脂膜的步骤之前或在形成感光性树脂图案的步骤之后,至少在半透明膜的表面上。 另外,本发明提供了一种用于制造曝光掩模的装置,包括用于将至少包含曝光波长的光发射到形成在透光基板上的半透明膜上的光源,用于检测从光源发射的光的光电检测单元和 通过透光膜透射或反射,以及测量单元,用于根据由光检测单元检测到的光来测量半透膜的特性。
    • 10. 发明授权
    • Air-fuel ratio detector and method of measuring air-fuel ratio
    • 空燃比检测器和空燃比测量方法
    • US4574627A
    • 1986-03-11
    • US576957
    • 1984-02-03
    • Shigenori SakuraiTakashi KamoTadayoshi Ikai
    • Shigenori SakuraiTakashi KamoTadayoshi Ikai
    • G01N27/41F02D35/00F02D41/14G01M15/00G01N27/409G01N27/416G01N27/417
    • G01N27/417
    • An air-fuel ratio detector and an air-fuel ratio measuring method for detecting an oxygen density in an exhaust gas emitted from the internal combustion engine of an automobile. The air-fuel ratio detector has a tubular body and a pair of partition members dividing the tubular body into a closed-end section and an open-end section. At least one of the partition members comprises a solid electrolyte permeable to oxygen ions. A pair of electrodes is mounted on opposite surfaces of the solid electrolyte and connected to a DC power supply, thus constituting an oxygen pump. Another pair of electrodes is mounted on one of the partition members and connected to a DC power supply, thus constituting a limited-current oxygen sensor. Oxygen is introduced into a space between the partition members at all times by the oxygen pump to maintain the gas, which has been supplied through a gas dispersion member into the space, lean.
    • 一种空燃比检测器和用于检测从汽车的内燃机排出的废气中的氧浓度的空燃比测定方法。 空燃比检测器具有管状体和将管状体分成封闭端部和开口端部的一对分隔构件。 至少一个分隔构件包括可渗透氧离子的固体电解质。 一对电极安装在固体电解质的相对表面上并连接到直流电源,从而构成氧气泵。 另一对电极安装在一个分隔构件上并连接到直流电源,从而构成有限电流的氧传感器。 氧气始终通过氧气泵引入分隔构件之间的空间中,以将通过气体分散构件供应的气体维持在空间中。