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41. 发明授权

US5552341A Semiconductor device and method for manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5552341A
公开(公告)日：1996-09-03
申请号：US164920
申请日：1993-12-10
申请人： Sang-in Lee
发明人： Sang-in Lee
IPC分类号： H01L21/28 , C23C14/06 , C23C14/24 , H01L21/768 , H01L23/522 , H01L23/532 , H01L21/441
CPC分类号： H01L21/76856 , H01L21/76843 , H01L21/76846 , H01L21/76877 , H01L21/76882 , H01L23/532 , H01L2924/0002 , Y10S257/915
摘要： A semiconductor device and manufacturing method thereof having a diffusion barrier layer formed on a semiconductor wafer. The diffusion barrier layer has a surface region provided with a silylation layer which is formed on the diffusion barrier layer by a plasma process using silicon hydride or by a reactive sputtering method using SiH.sub.4. When a metal layer is formed on the silylation layer, the wettability between the diffusion barrier layer and the metal is enhanced and large grains are formed, thereby increasing the step coverage for the contact hole of the metal layer or for the via hole. Additionally, when heat treatment is performed after the metal layer is formed on the silylation layer, the reflow characteristic of the metal layer becomes good, to thereby facilitate the filling of the contact hole or the via hole. When the wiring layer is thus formed, metal wiring having good reliability can be obtained and a subsequent scintering process is rendered unnecessary.
摘要翻译：一种在半导体晶片上形成扩散阻挡层的半导体器件及其制造方法。扩散阻挡层具有通过使用氢化硅的等离子体处理或通过使用SiH 4的反应溅射法形成在扩散阻挡层上的甲硅烷基层的表面区域。当在甲硅烷基层上形成金属层时，扩散阻挡层和金属之间的润湿性增强，并且形成大的晶粒，从而增加金属层或通孔的接触孔的阶梯覆盖。此外，当在甲硅烷基层上形成金属层之后进行热处理时，金属层的回流特性变好，从而有助于填充接触孔或通孔。当这样形成布线层时，可以获得具有良好可靠性的金属布线，并且不需要随后的烧结处理。

42. 发明授权

US07052918B2 Multi-layer film for thin film structure, capacitor using the same and fabrication method thereof 有权
公开(公告)号：US07052918B2
公开(公告)日：2006-05-30
申请号：US10410341
申请日：2003-04-10
申请人： Jae-soon Lim , Yeong-kwan Kim , Heung-soo Park , Sang-in Lee
发明人： Jae-soon Lim , Yeong-kwan Kim , Heung-soo Park , Sang-in Lee
IPC分类号： H01L21/8242
CPC分类号： H01L28/40 , H01L21/3142 , H01L21/31604 , H01L21/31616
摘要： A multi-layer film for a thin film structure, a capacitor using the multi-layer film and methods for fabricating the multi-layer film and the capacitor, the multi-layer film including a composition transition layer between a lower material layer and an upper material layer respectively formed of different elements whose interaction parameters are different from each other, the composition transition layer containing both elements of the lower and upper material layers, the concentration of the composition transition layer gradually varying from the portion of the composition transition layer contacting with the lower material layer to the portion of the composition transition layer contacting with the upper material layer such that the concentration of the element of the upper material layer is relatively large in its portion adjacent to the upper material layer, each of the lower and upper material layers being formed of an oxide or nitride material of aluminum, silicon, zirconium, cerium, titanium, yttrium, tantalum or niobium.

43. 发明授权

US07050937B2 Performance measurement system 有权
标题翻译：性能测量系统
公开(公告)号：US07050937B2
公开(公告)日：2006-05-23
申请号：US10791808
申请日：2004-03-04
申请人： Sang-in Lee
发明人： Sang-in Lee
IPC分类号： G06F19/00
CPC分类号： B25J9/1674 , G05B2219/37605 , G05B2219/40602
摘要： A performance test system includes a measuring device to measure an object device, and a computing device having a controller to test performance of the object device based on measured data transmitted from the measuring device, wherein the controller controls to display a report setup window through which data to be reflected in a measurement report is inputted, a coordinate-system setup window through which a coordinate system is set up based on the object device, and a measuring option setup window through which options for measuring the performance of the object device are set up, controls operation of the measuring device and the object device based on the options set up through the measuring option setup window, and tests the performance of the object device based on the measured data transmitted from the measuring device according to the operation of the object device and the measuring device, and controls to display a report window to process and to output report data inputted through the report setup window and the measured data transmitted from the measuring device. The present invention provides a performance measurement system, in which performance of an object device is measured, the performance measurement is reported with measured data and various report data, and an interface convenient for a user is provided.
摘要翻译：性能测试系统包括测量对象设备的测量设备和具有控制器的计算设备，该控制器基于从测量设备发送的测量数据来测试对象设备的性能，其中控制器控制显示报告设置窗口，通过该设置窗口输入要反映在测量报告中的数据，基于对象设备建立坐标系的坐标系设置窗口以及用于测量对象设备的性能的选项的测量选项设置窗口基于通过测量选项设置窗口设置的选项来控制测量设备和对象设备的操作，并且基于根据对象的操作从测量设备发送的测量数据来测试对象设备的性能设备和测量设备，并控制显示报告窗口以处理和输出输入的报告数据通过报告设置窗口和从测量设备发送的测量数据。本发明提供了一种性能测量系统，其中测量对象设备的性能，通过测量数据和各种报告数据报告性能测量，并提供对用户方便的接口。

44. 发明申请

US20050027479A1 Performance measurement system 有权
标题翻译：性能测量系统
公开(公告)号：US20050027479A1
公开(公告)日：2005-02-03
申请号：US10791808
申请日：2004-03-04
申请人： Sang-in Lee
发明人： Sang-in Lee
IPC分类号： G05B23/02 , G01M99/00 , G21C17/00
CPC分类号： B25J9/1674 , G05B2219/37605 , G05B2219/40602
摘要： A performance test system includes a measuring device to measure an object device, and a computing device having a controller to test performance of the object device based on measured data transmitted from the measuring device, wherein the controller controls to display a report setup window through which data to be reflected in a measurement report is inputted, a coordinate-system setup window through which a coordinate system is set up based on the object device, and a measuring option setup window through which options for measuring the performance of the object device are set up, controls operation of the measuring device and the object device based on the options set up through the measuring option setup window, and tests the performance of the object device based on the measured data transmitted from the measuring device according to the operation of the object device and the measuring device, and controls to display a report window to process and to output report data inputted through the report setup window and the measured data transmitted from the measuring device. The present invention provides a performance measurement system, in which performance of an object device is measured, the performance measurement is reported with measured data and various report data, and an interface convenient for a user is provided.
摘要翻译：性能测试系统包括测量对象设备的测量设备和具有控制器的计算设备，该控制器基于从测量设备发送的测量数据来测试对象设备的性能，其中控制器控制显示报告设置窗口，通过该设置窗口输入要反映在测量报告中的数据，基于对象设备建立坐标系的坐标系设置窗口以及用于测量对象设备的性能的选项的测量选项设置窗口基于通过测量选项设置窗口设置的选项来控制测量设备和对象设备的操作，并且基于根据对象的操作从测量设备发送的测量数据来测试对象设备的性能设备和测量设备，并控制显示报告窗口以处理和输出输入的报告数据通过报告设置窗口和从测量设备发送的测量数据。本发明提供了一种性能测量系统，其中测量对象设备的性能，通过测量数据和各种报告数据报告性能测量，并提供对用户方便的接口。

45. 发明授权

US06478872B1 Method of delivering gas into reaction chamber and shower head used to deliver gas 有权
标题翻译：将气体输送到用于输送气体的反应室和淋浴喷头中的方法
公开(公告)号：US06478872B1
公开(公告)日：2002-11-12
申请号：US09467313
申请日：1999-12-20
申请人： Yun-sook Chae , In-sang Jeon , Sang-bom Kang , Sang-in Lee , Kyu-wan Ryu
发明人： Yun-sook Chae , In-sang Jeon , Sang-bom Kang , Sang-in Lee , Kyu-wan Ryu
IPC分类号： C30B2500
CPC分类号： C30B25/14 , C23C16/45548 , C23C16/45565 , C23C16/45574
摘要： A method of delivering two or more mutually-reactive reaction gases when a predetermined film is deposited on a substrate, and a shower head used in the gas delivery method, function to increase the film deposition rate while preventing formation of contaminating particles. In this method, one reaction gas is delivered toward the edge of the substrate, and the other reaction gases are delivered toward the central portion of the substrate, each of the reaction gases being delivered via an independent gas outlet to prevent the reaction gases from being mixed. In the shower head, separate passages are provided to prevent the first reaction gas from mixing with the other reaction gases by delivering the first reaction gas from outlets formed around the edge of the bottom surface of the shower head. The other reaction gases are delivered from outlets formed in the central portion of the bottom surface of the shower head. Accordingly, one of the mutually-reactive gases is delivered toward the central portion of the substrate, and the others are delivered toward the edge of the substrate.
摘要翻译：当将预定的膜沉积在基底上时输送两个或更多个相互反应的反应气体的方法和用于气体输送方法的淋浴头的作用是提高膜沉积速率同时防止污染颗粒的形成。在该方法中，一个反应气体被输送到基板的边缘，并且其它反应气体被输送到基板的中心部分，每个反应气体经由独立的气体出口输送，以防止反应气体混合在喷淋头中，设置分开的通道，以防止第一反应气体与其它反应气体混合，通过从喷淋头底表面的边缘周围形成的出口输送第一反应气体。其他反应气体从形成在淋浴喷头的底面的中心部分的出口输送。因此，相互反应的气体中的一种被输送到基板的中心部分，而其它的被传送到基板的边缘。

46. 发明授权

US06180447B2 Methods for fabricating integrated circuit capacitors including barrier layers having grain boundary filling material 有权
标题翻译：制造集成电路电容器的方法，其包括具有晶界填充材料的阻挡层
公开(公告)号：US06180447B2
公开(公告)日：2001-01-30
申请号：US09223540
申请日：1998-12-30
申请人： Chang-soo Park , Sang-in Lee , Hong-ku Paik
发明人： Chang-soo Park , Sang-in Lee , Hong-ku Paik
IPC分类号： H01L218242
CPC分类号： H01L21/7687 , H01L21/28568 , H01L21/76841 , H01L21/76849 , H01L21/76855 , H01L28/55 , H01L28/60 , H01L28/75
摘要： A barrier layer is included in an integrated circuit capacitor, between a conductive plug and a lower capacitor electrode. The barrier layer includes refractory metal and grain boundary filling material. The grain boundary filling material preferably is Ce, Zr, Y, Th, Hf, La, Al and/or oxides thereof, and is preferably less that 20 atomic percent of the barrier layer. The barrier layer can reduce and preferably prevent diffusion of oxygen, and can thereby reduce the leakage current and oxidation of the integrated circuit capacitor.
摘要翻译：在集成电路电容器中包括阻挡层，在导电插塞和下电容器电极之间。阻挡层包括难熔金属和晶界填充材料。晶界填充材料优选为Ce，Zr，Y，Th，Hf，La，Al和/或其氧化物，优选小于阻挡层的20原子％。阻挡层可以减少并优选地防止氧的扩散，并且因此可以减小集成电路电容器的漏电流和氧化。

47. 发明授权

US6156644A Method for forming interconnects for semiconductor devices using reaction control layers, and interconnects formed thereby 失效
标题翻译：用于使用反应控制层形成用于半导体器件的互连的方法，以及由此形成的互连
公开(公告)号：US6156644A
公开(公告)日：2000-12-05
申请号：US760594
申请日：1996-12-04
申请人： Kwang-man Ko , Sang-in Lee
发明人： Kwang-man Ko , Sang-in Lee
IPC分类号： H01L21/28 , H01L21/285 , H01L21/3205 , H01L21/768 , H01L23/522 , H01L21/44 , H01L21/4763 , H01L29/40
CPC分类号： H01L21/76865 , H01L21/28518 , H01L21/76843 , H01L21/76855
摘要： Interconnects for semiconductor devices are formed by forming a reaction control layer on a lower conductive layer of a semiconductor device, forming a reactive metal layer on the reaction control layer, opposite the lower conductive layer, reacting the lower conductive layer with the reactive metal layer, through the reaction control layer, to form an ohmic contact for the semiconductor device, and forming an upper conductive layer on the ohmic contact, opposite the lower conductive layer. Interconnects so formed may provide reduced contact resistance and reduced agglomeration of the ohmic contact region, independent of reaction temperatures. The reactive metal layer is preferably a refractory metal and the reaction control layer is preferably a refractory metal compound. The upper conductive layer is also preferably a refractory metal.
摘要翻译：通过在半导体器件的下导电层上形成反应控制层，在反应控制层上形成与下导电层相反的反应性金属层，使下导电层与反应性金属层反应，形成半导体器件互连，通过反应控制层，形成用于半导体器件的欧姆接触，以及在欧姆接触上形成与下导电层相对的上导电层。如此形成的互连可以提供降低的接触电阻并且减小欧姆接触区的附聚，而与反应温度无关。反应性金属层优选为难熔金属，反应控制层优选为难熔金属化合物。上导电层也优选为难熔金属。

48. 发明授权

US5814556A Method of filling a contact hole in a semiconductor substrate with a metal 失效
标题翻译：用金属填充半导体衬底中的接触孔的方法
公开(公告)号：US5814556A
公开(公告)日：1998-09-29
申请号：US698372
申请日：1996-08-15
申请人： Young-jin Wee , In-seon Park , Sang-in Lee
发明人： Young-jin Wee , In-seon Park , Sang-in Lee
IPC分类号： H01L21/285 , H01L21/28 , H01L21/768 , H01L21/4763
CPC分类号： H01L21/76877
摘要： A method for forming a metal layer of an ultra-thin film according to metal deposition conditions and a method for forming metal wiring by filling a high aspect-ratio contact hole using cooling step prior to depositing the metal layer. In particular, the additional cooling process is performed before the process of depositing the metal layer and then the deposition process is performed in a state where the temperature of the wafer has been cooled down to a temperature in the range between -25.degree. C. and room temperature. The surface morphology of the deposited metal layer is improved and a continuous ultra-thin film can be obtained. Also, the aluminum filling characteristics in the contact hole having a high aspect-ratio are improved.
摘要翻译：根据金属沉积条件形成超薄膜的金属层的方法以及通过在沉积金属层之前使用冷却步骤填充高纵横比接触孔来形成金属布线的方法。特别地，在沉积金属层的过程之前进行附加的冷却过程，然后在晶片的温度已经冷却到-25℃和-25℃之间的温度的状态下进行沉积工艺，并且室内温度。沉积金属层的表面形态得到改善，可获得连续的超薄膜。此外，具有高纵横比的接触孔中的铝填充特性得到改善。

49. 发明授权

US5572071A Semiconductor device having a multi-layer metallization structure 失效
公开(公告)号：US5572071A
公开(公告)日：1996-11-05
申请号：US476738
申请日：1995-06-07
申请人： Sang-in Lee
发明人： Sang-in Lee
IPC分类号： H01L21/285 , H01L21/441 , H01L21/48 , H01L21/768 , H01L23/485 , H01L23/522 , H01L23/532 , H01L29/41 , H01L29/43
CPC分类号： H01L21/76838 , H01L21/76843 , H01L21/76856 , H01L21/76862 , H01L21/76876 , H01L21/76877 , H01L23/485 , H01L23/53223 , H01L2924/0002 , Y10S257/915
摘要： The invention relates to a wiring structure for a semiconductor device and a method for manufacturing the same, which fills up a contact hole of below one half micron. An insulating layer is formed on a semiconductor substrate, and a contact hole is formed in the insulating layer. On the insulating layer, a first metal is deposited via a CVD method to form a CVD metal layer or a CVD metal plug filling up the contact hole. Then, the thus-obtained CVD metal layer or the CVD metal plus is heat-treated in a vacuum at a high temperature below the melting point of the first metal, thereby planarizing the surface of the CVD metal layer. A second metal is deposited via a sputtering method on the CVD metal layer or on the CVD metal plug to thereby form a sputtered metal layer. The contact hole is filled up with the first metal by the CVD method and then a reliable sputtered metal layer is deposited via a sputtering method. The wiring layer can be used for semiconductor devices of the next generation.

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