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1. 发明授权

US06180447B2 Methods for fabricating integrated circuit capacitors including barrier layers having grain boundary filling material 有权
标题翻译：制造集成电路电容器的方法，其包括具有晶界填充材料的阻挡层
公开(公告)号：US06180447B2
公开(公告)日：2001-01-30
申请号：US09223540
申请日：1998-12-30
申请人： Chang-soo Park , Sang-in Lee , Hong-ku Paik
发明人： Chang-soo Park , Sang-in Lee , Hong-ku Paik
IPC分类号： H01L218242
CPC分类号： H01L21/7687 , H01L21/28568 , H01L21/76841 , H01L21/76849 , H01L21/76855 , H01L28/55 , H01L28/60 , H01L28/75
摘要： A barrier layer is included in an integrated circuit capacitor, between a conductive plug and a lower capacitor electrode. The barrier layer includes refractory metal and grain boundary filling material. The grain boundary filling material preferably is Ce, Zr, Y, Th, Hf, La, Al and/or oxides thereof, and is preferably less that 20 atomic percent of the barrier layer. The barrier layer can reduce and preferably prevent diffusion of oxygen, and can thereby reduce the leakage current and oxidation of the integrated circuit capacitor.
摘要翻译：在集成电路电容器中包括阻挡层，在导电插塞和下电容器电极之间。阻挡层包括难熔金属和晶界填充材料。晶界填充材料优选为Ce，Zr，Y，Th，Hf，La，Al和/或其氧化物，优选小于阻挡层的20原子％。阻挡层可以减少并优选地防止氧的扩散，并且因此可以减小集成电路电容器的漏电流和氧化。

2. 发明授权

US5892254A Integrated circuit capacitors including barrier layers having grain boundary filling material 失效
标题翻译：集成电路电容器，包括具有晶界填充材料的阻挡层
公开(公告)号：US5892254A
公开(公告)日：1999-04-06
申请号：US940258
申请日：1997-09-30
申请人： Chang-soo Park , Sang-in Lee , Hong-ku Paik
发明人： Chang-soo Park , Sang-in Lee , Hong-ku Paik
IPC分类号： H01L27/04 , H01L21/02 , H01L21/285 , H01L21/768 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108 , H01L29/92 , H01L29/76 , H01L23/48 , H01L23/52 , H01L29/94
CPC分类号： H01L21/7687 , H01L21/76841 , H01L21/76849 , H01L21/76855 , H01L28/60 , H01L28/75 , H01L21/28568 , H01L28/55
摘要： A barrier layer is included in an integrated circuit capacitor, between a conductive plug and a lower capacitor electrode. The barrier layer includes refractory metal and grain boundary filling material. The grain boundary filling material preferably is Ce, Zr, Y, Th, Hf, La, Al and/or oxides thereof, and is preferably less that 20 atomic percent of the barrier layer. The barrier layer can reduce and preferably prevent diffusion of oxygen, and can thereby reduce the leakage current and oxidation of the integrated circuit capacitor.
摘要翻译：在集成电路电容器中包括阻挡层，在导电插塞和下电容器电极之间。阻挡层包括难熔金属和晶界填充材料。晶界填充材料优选为Ce，Zr，Y，Th，Hf，La，Al和/或其氧化物，优选小于阻挡层的20原子％。阻挡层可以减少并优选地防止氧的扩散，从而可以减小集成电路电容器的漏电流和氧化。

3. 发明授权

US06207487B1 Method for forming dielectric film of capacitor having different thicknesses partly 失效
标题翻译：部分形成不同厚度的电容器的电介质膜的形成方法
公开(公告)号：US06207487B1
公开(公告)日：2001-03-27
申请号：US09415830
申请日：1999-10-12
申请人： Yeong-kwan Kim , Sang-in Lee , Chang-soo Park , Young-sun Kim
发明人： Yeong-kwan Kim , Sang-in Lee , Chang-soo Park , Young-sun Kim
IPC分类号： H01L218244
CPC分类号： H01L28/40 , H01L21/02178 , H01L21/0228 , H01L21/31604 , H01L21/3162 , H01L21/31691 , H01L28/55
摘要： The present invention discloses a method for forming a dielectric film having improved leakage current characteristics in a capacitor. A lower electrode having a surface and a rounded protruding portion is formed on a semiconductor substrate. The surface and the protruding portion define at least one concave area. A chemisorption layer is then formed on the surface and the rounded protruding portion by supplying a first reactant. Also, a physisorption layer is formed on the chemisorption layer from the first reactant. Next, a portion of the physisorption layer is removed and a portion of the physisorption layer is left on the concave area. Subsequently, the chemisorption layer and the portion of the physisorption layer on the concave area react with a second reactant to form a dielectric film on the surface of the lower electrode. The thickness of said dielectric film is greater on the concave area than on the protruding portion, thereby reducing leakage current.
摘要翻译：本发明公开了一种在电容器中形成具有改善的漏电流特性的电介质膜的方法。在半导体衬底上形成具有表面和圆形突出部分的下电极。表面和突出部分限定至少一个凹入区域。然后通过提供第一反应物在表面和圆形突出部分上形成化学吸附层。此外，在第一反应物的化学吸附层上形成物理吸附层。接下来，去除一部分物理吸附层，并将一部分物理吸附层留在凹面上。随后，化学吸收层和凹面上的物理吸附层的部分与第二反应物反应，以在下电极的表面上形成电介质膜。所述电介质膜的厚度在凹区域上大于突出部分的厚度，从而减少漏电流。

4. 发明授权

US06174809B1 Method for forming metal layer using atomic layer deposition 有权
标题翻译：使用原子层沉积法形成金属层的方法
公开(公告)号：US06174809B1
公开(公告)日：2001-01-16
申请号：US09212090
申请日：1998-12-15
申请人： Sang-bom Kang , Yun-sook Chae , Chang-soo Park , Sang-in Lee
发明人： Sang-bom Kang , Yun-sook Chae , Chang-soo Park , Sang-in Lee
IPC分类号： H01L2144
CPC分类号： H01L21/76846 , C23C16/45561 , H01L21/28518 , H01L21/28562 , H01L21/76843
摘要： A method for forming a metal layer using an atomic layer deposition process. A sacrificial metal atomic layer is formed on a semiconductor substrate by reacting a precursor containing a metal with a reducing gas, and a metal atomic layer is formed of metal atoms separated from a metal halide gas on a semiconductor substrate by reacting the sacrificial metal atomic layer with a metal halide gas. Also, a silicon atomic layer may be additionally formed on the metal atomic layer using a silicon source gas, to thereby alternately stack metal atomic layers and silicon layers. Thus, a metal layer or a metal silicide layer having excellent step coverage can be formed on the semiconductor substrate.
摘要翻译：一种使用原子层沉积工艺形成金属层的方法。通过使包含金属的前体与还原气体反应而在半导体衬底上形成牺牲金属原子层，并且金属原子层由半导体衬底上的金属卤化物气体分离的金属原子形成，通过使牺牲金属原子层与金属卤化物气体。此外，可以使用硅源气体在金属原子层上另外形成硅原子层，从而交替堆叠金属原子层和硅层。因此，可以在半导体衬底上形成具有优异的阶梯覆盖的金属层或金属硅化物层。

5. 发明授权

US6144060A Integrated circuit devices having buffer layers therein which contain metal oxide stabilized by heat treatment under low temperature 失效
标题翻译：其中具有缓冲层的集成电路器件含有通过在低温下热处理而稳定的金属氧化物
公开(公告)号：US6144060A
公开(公告)日：2000-11-07
申请号：US127353
申请日：1998-07-31
申请人： In-seon Park , Yeong-kwan Kim , Sang-in Lee , Byung-hee Kim , Sang-min Lee , Chang-soo Park
发明人： In-seon Park , Yeong-kwan Kim , Sang-in Lee , Byung-hee Kim , Sang-min Lee , Chang-soo Park
IPC分类号： H01L21/8247 , H01L21/02 , H01L21/285 , H01L21/822 , H01L21/8242 , H01L21/8246 , H01L27/04 , H01L27/10 , H01L27/105 , H01L27/108 , H01L29/788 , H01L29/792 , H01L29/72
CPC分类号： H01L28/75 , H01L21/28568 , H01L27/10852 , H01L28/55
摘要： Integrated circuit devices include a first dielectric layer, an electrically insulating layer on the first dielectric layer and an an aluminum oxide buffer layer formed by atomic layer deposition (ALD) and stabilized by heat treatment at a temperature of less than about 600.degree. C., between the first dielectric layer and the electrically insulating layer. The first dielectric layer may comprise a high dielectric material such as a ferroelectric or paraelectric material. The electrically insulating layer may also comprise a material selected from the group consisting of silicon dioxide, borophosphosilicate glass (BPSG) and phosphosilicate glass (PSG). To provide a preferred integrated circuit capacitor, a substrate may be provided and an interlayer dielectric layer may be provided on the substrate. Here, a metal layer may also be provided between the interlayer dielectric layer and the first dielectric layer. The metal layer may comprise a material selected from the group consisting of Pt, Ru, Ir, and Pd.
摘要翻译：集成电路器件包括第一电介质层，第一电介质层上的电绝缘层和通过原子层沉积（ALD）形成并通过在小于约600℃的温度下进行热处理而稳定的氧化铝缓冲层，在第一介电层和电绝缘层之间。第一电介质层可以包括高电介质材料，例如铁电或顺电材料。电绝缘层还可以包括选自二氧化硅，硼磷硅酸盐玻璃（BPSG）和磷硅玻璃（PSG）的材料。为了提供优选的集成电路电容器，可以提供衬底，并且可以在衬底上提供层间电介质层。这里，还可以在层间介电层和第一介电层之间设置金属层。金属层可以包括选自Pt，Ru，Ir和Pd的材料。

6. 发明授权

US5869902A Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US5869902A
公开(公告)日：1999-02-09
申请号：US612792
申请日：1996-03-11
申请人： Sang-in Lee , Chang-soo Park
发明人： Sang-in Lee , Chang-soo Park
IPC分类号： H01L21/28 , H01L21/283 , H01L21/3105 , H01L21/3205 , H01L21/768 , H01L23/485 , H01L23/52 , H01L23/522 , H01L23/532 , H01L23/48 , H01L29/40
CPC分类号： H01L21/76865 , H01L21/3105 , H01L21/76843 , H01L21/76844 , H01L21/76858 , H01L21/76882 , H01L23/485 , H01L23/5226 , H01L23/53223 , H01L2924/0002
摘要： A wiring layer of a semiconductor device having a novel contact structure is disclosed. The semiconductor device includes a semiconductor substrate, an insulating layer having an opening (contact hole or via), a reactive spacer formed on the sidewall of the opening or a reactive layer formed on the sidewall and on the bottom surface of the opening and a first conductive layer formed on the insulating layer which completely fills the opening. Since the reactive spacer or layer is formed on the sidewall of the opening, when the first conductive layer material is deposited, large islands will form to become large grains of the sputtered Al film. Also, providing the reactive spacer or layer improves the reflow of the first conductive layer during a heat-treating step for filling the opening at a high temperature below a melting temperature. Thus, complete filling of the opening with sputtered Al can be ensured. All the contact holes, being less than 1 .mu.m in size and having an aspect ratio greater than 1.0, can be completely filled with Al, to thereby enhance the reliability of the wiring of a semiconductor device.
摘要翻译：公开了具有新型接触结构的半导体器件的布线层。半导体器件包括半导体衬底，具有开口（接触孔或通孔）的绝缘层，形成在开口的侧壁上的反应性间隔物或形成在开口的侧壁和底表面上的反应层，第一形成在绝缘层上的完全填充开口的导电层。由于反应性间隔物或层形成在开口的侧壁上，所以当沉积第一导电层材料时，将形成大的岛形成溅射的Al膜的大颗粒。此外，提供反应间隔物或层在用于在低于熔融温度的高温下填充开口的热处理步骤期间改善了第一导电层的回流。因此，可以确保用溅射的Al完全填充开口。尺寸小于1μm并且具有大于1.0的纵横比的所有接触孔可以完全填充Al，从而提高半导体器件的布线的可靠性。

7. 发明授权

US06270572B1 Method for manufacturing thin film using atomic layer deposition 有权
标题翻译：使用原子层沉积制造薄膜的方法
公开(公告)号：US06270572B1
公开(公告)日：2001-08-07
申请号：US09371709
申请日：1999-08-09
申请人： Yeong-kwan Kim , Sang-in Lee , Chang-soo Park , Sang-min Lee
发明人： Yeong-kwan Kim , Sang-in Lee , Chang-soo Park , Sang-min Lee
IPC分类号： C30B2502
CPC分类号： H05B33/04 , C23C16/44 , C23C16/45527 , C23C16/45561 , H01L21/02381 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L21/31604 , H01L21/31691
摘要： A thin film manufacturing method is provided. The method includes the step of chemically adsorbing a first reactant on a substrate by injecting the first reactant into a chamber in which the substrate is loaded. Physisorbed first reactant on the chemically adsorbed first reactant is removed by purging or pumping the chamber. After the first reactant is densely chemically adsorbed on the substrate by re-injecting the first reactant into the chamber, the physisorbed first reactant on the dense chemisorbed first reactant is removed by purging or pumping the chamber. A second reactant is chemically adsorbed onto the surface of the substrate by injecting the second reactant into the chamber. Physisorbed second reactant on the chemisorbed first reactant and the second reactant is removed by purging or pumping the chamber. A solid thin film is formed by chemical exchange through densely adsorbing the second reactant onto the substrate by re-injecting the second reactant into the chamber. According to the present invention, it is possible to obtain a precise stoichiometric thin film having a high film density, since the first reactant and the second reactant are densely adsorbed and the impurities are substantially removed by pumping or purging
摘要翻译：提供薄膜制造方法。该方法包括通过将第一反应物注入到其中负载衬底的室中来在基底上化学吸附第一反应物的步骤。化学吸附的第一反应物上的物理吸附的第一反应物通过清洗或泵送室来除去。在第一反应物通过将第一反应物重新注入室中密集地化学吸附在基材上之后，通过清洗或泵送室来去除致密化学吸附的第一反应物上的物理吸附的第一反应物。通过将第二反应物注入到室中，将第二反应物化学吸附到基底的表面上。化学吸附的第一反应物和第二反应物上的物理吸附的第二反应物通过清洗或泵送室来除去。通过将第二反应物重新注入到室中，将第二反应物密集地吸附到基底上，通过化学交换形成固体薄膜。根据本发明，可以获得具有高膜密度的精确化学计量薄膜，因为第一反应物和第二反应物被密集吸附并且通过泵送或清除基本上除去杂质

8. 发明授权

US06197683B1 Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same 有权
标题翻译：通过化学气相沉积形成金属氮化物膜的方法和使用其形成半导体器件的金属接触的方法
公开(公告)号：US06197683B1
公开(公告)日：2001-03-06
申请号：US09156724
申请日：1998-09-18
申请人： Sang-bom Kang , Chang-soo Park , Yun-sook Chae , Sang-in Lee
发明人： Sang-bom Kang , Chang-soo Park , Yun-sook Chae , Sang-in Lee
IPC分类号： H01L2144
CPC分类号： H01L21/76843 , C23C16/34 , C23C16/45553 , H01L21/28562 , H01L21/28568 , H01L21/76804 , H01L28/91
摘要： A method of forming a metal nitride film using chemical vapor deposition (CVD), and a method of forming a metal contact of a semiconductor device using the same, are provided. The method of forming a metal nitride film using chemical vapor deposition (CVD) in which a metal source and a nitrogen source are used as a precursor, includes the steps of inserting a semiconductor substrate into a deposition chamber, flowing the metal source into the deposition chamber, removing the metal source remaining in the deposition chamber by cutting off the inflow of the metal source and flowing a purge gas into the deposition chamber, cutting off the purge gas and flowing the nitrogen source into the deposition chamber to react with the metal source adsorbed on the semiconductor substrate, and removing the nitrogen source remaining in the deposition chamber by cutting off the inflow of the nitrogen source and flowing the purge gas into the deposition chamber. Accordingly, the metal nitride film has low resistivity and a low content of Cl even with excellent step coverage, and it can be formed at a temperature of 500° C. or lower. Also, a deposition speed, approximately 20 Å/cycle, is suitable for mass production.
摘要翻译：提供了使用化学气相沉积（CVD）形成金属氮化物膜的方法，以及使用其形成使用其的半导体器件的金属接触的方法。使用其中使用金属源和氮源作为前体的化学气相沉积（CVD）形成金属氮化物膜的方法包括以下步骤：将半导体衬底插入淀积室中，使金属源流入沉积物通过切断金属源的流入并将净化气体流入沉积室，去除沉积室中残留的金属源，切断净化气体并使氮源流入沉积室以与金属源反应吸附在半导体衬底上，并且通过切断氮源的流入并将净化气体流入沉积室来除去留在沉积室中的氮源。因此，即使具有优异的阶梯覆盖，金属氮化物膜也具有低电阻率和低的Cl含量，并且可以在500℃或更低的温度下形成。此外，沉积速度约为每秒的一个循环，适合批量生产。

9. 发明授权

US5266521A Method for forming a planarized composite metal layer in a semiconductor device 失效
标题翻译：在半导体器件中形成平面化复合金属层的方法
公开(公告)号：US5266521A
公开(公告)日：1993-11-30
申请号：US828458
申请日：1992-01-31
申请人： Sang-in Lee , Chang-soo Park , Jeong-ha Son
发明人： Sang-in Lee , Chang-soo Park , Jeong-ha Son
IPC分类号： H01L21/20 , H01L21/3205 , H01L21/321 , H01L21/768 , H01L23/532 , H01L21/441
CPC分类号： H01L21/76882 , H01L21/32115 , H01L21/7684 , H01L23/53214 , H01L21/76804 , H01L2924/0002 , Y10S438/913
摘要： A method for manufacturing a semiconductor device, comprising the steps of forming an insulating interlayer on a semiconductor substrate to provide a semiconductor intermediate product, providing the insulating interlayer with an opening, forming a first metal layer on the semiconductor intermediate product, heat-treating the first metal layer to fill up the opening with the metal, forming a second metal layer on the first metal layer, and then heat-treating the second layer to planarize the metal layer. An alternative embodiment of the invention encompasses a method for manufacturing a semiconductor device, comprising the steps of providing a semiconductor wafer with an opening formed thereon, forming a metal layer on the semiconductor wafer, and then heat-treating the metal layer to fill up the opening with the metal, wherein pure Al or an aluminum alloy having no Si component is used as the metal in forming the metal layer.
摘要翻译：一种制造半导体器件的方法，包括以下步骤：在半导体衬底上形成绝缘中间层以提供半导体中间产物，为绝缘中间层提供开口，在半导体中间产物上形成第一金属层，热处理第一金属层用金属填充开口，在第一金属层上形成第二金属层，然后热处理第二层以使金属层平坦化。本发明的替代实施例包括一种用于制造半导体器件的方法，包括以下步骤：提供半导体晶片，其上形成有开口，在半导体晶片上形成金属层，然后热处理金属层以填充与金属一起开口，其中在形成金属层时使用纯Al或不含Si成分的铝合金作为金属。

10. 发明授权

US06013576A Methods for forming an amorphous tantalum nitride film 失效
标题翻译：形成无定形氮化钽膜的方法
公开(公告)号：US06013576A
公开(公告)日：2000-01-11
申请号：US902880
申请日：1997-07-30
申请人： Jae-eung Oh , Sang-in Lee , Chang-soo Park
发明人： Jae-eung Oh , Sang-in Lee , Chang-soo Park
IPC分类号： C23C16/02 , C23C16/34 , C23C16/50 , H01L21/28 , H01L21/285 , H01L21/768 , H01L21/822 , H01L21/8242 , H01L27/04 , H01L27/108 , H01L21/205
CPC分类号： H01L21/76864 , C23C16/0227 , C23C16/34 , H01L21/76841
摘要： A metal nitride layer is formed on a substrate by exposing the substrate to a mixture including a nitrogen-containing organometallic gas and a hydrogen plasma to form a metal nitride layer on the substrate. The nitrogen-containing organometallic gas may comprise penta dimethyl amido tantalum (Ta(N(CH.sub.3).sub.2).sub.5, and the metal nitride layer may be formed by exposing comprises the step of exposing the substrate to a mixture including penta dimethyl amido tantalum gas (Ta(N(CH.sub.3).sub.2).sub.5 and a hydrogen plasma at a temperature greater than 300.degree. C., more preferably, at a temperature of 300.degree. C. to 750.degree. C. and a pressure of 0.5 torr to 1.5 torr. The penta dimethyl amido tantalum gas (Ta(N(CH.sub.3).sub.2).sub.5 is preferably provided to a chamber in which the substrate is placed at a mass flow rate of 50 sccm to 150 sccm, and the hydrogen plasma referably provided to the chamber at a mass flow rate of 30 sccm to 100 sccm. The hydrogen plasma may be produced external to the chamber in an atmosphere comprising hydrogen and an inert gas such as argon. A tantalum nitride (Ta.sub.3 N.sub.5 layer having a resistivity less than 1.times.10.sup.4 .mu..OMEGA.-cm may thereby be formed.
摘要翻译：通过将衬底暴露于包含含氮有机金属气体和氢等离子体的混合物在衬底上形成金属氮化物层，以在衬底上形成金属氮化物层。含氮有机金属气体可以包含五聚二甲基氨基钽（Ta（N（CH 3）2）5，并且金属氮化物层可以通过曝光形成包括将基底暴露于包括五聚二甲基氨基钽气体 Ta（N（CH 3）2）5和氢等离子体，温度高于300℃，更优选在300℃至750℃的温度下，压力为0.5托至1.5托。五元二甲基氨基钽气体（Ta（N（CH 3）2）5优选设置在其中以50sccm至150sccm的质量流速放置基板的室中，并且氢气等离子体可以在质量流量为30sccm至100sccm，氢气等离子体可以在包含氢气和惰性气体如氩气的气氛中在室外产生，氮化钽（具有小于1×10 4μM欧姆/ cm的电阻率的Ta 3 N 5层可以从而形成。

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