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41. 发明申请

US20050214950A1 Optical disk based gas-sensing and storage device 审中-公开
标题翻译：基于光盘的气体传感和存储设备
公开(公告)号：US20050214950A1
公开(公告)日：2005-09-29
申请号：US10807020
申请日：2004-03-23
申请人： Jeffrey Roeder , Thomas Baum
发明人： Jeffrey Roeder , Thomas Baum
IPC分类号： G01N21/00 , G01N21/75 , G01N21/78
CPC分类号： G01N21/75 , G01N21/783
摘要： An optical disk based gas-sensing and storage system for sensing toxic gas species or environmental contaminants and recording such events on an optical data storage disk. The system includes a gas-retaining unit having an internal cavity for retaining a gaseous sample potentially comprising a gas species of interest, an optical storage disk arranged for contact with the gaseous sample in the gas-retaining unit, wherein the optical data storage disk includes a gas-sensing medium that exhibits a physical and/or chemical property change when exposed to the gas species of interest thereby generating optically readable signals, and a laser energy source positioned to irradiate the optical data storage disk to detect and/or enhance changes in chemical and/or physical properties of the gas-sensing medium and record optically readable signals.
摘要翻译：一种用于感测有毒气体种类或环境污染物并在光学数据存储盘上记录这种事件的基于光盘的气体感测和存储系统。该系统包括气体保持单元，该气体保持单元具有用于保持潜在地包含感兴趣的气体种类的气体样品的内部空腔，光学存储盘布置成与气体保持单元中的气体样品接触，其中光学数据存储盘包括当暴露于感兴趣的气体物质时产生物理和/或化学性质的气体感测介质，从而产生光学可读信号;以及激光能量源，其被定位成照射光学数据存储盘以检测和/或增强气体传感介质的化学和/或物理特性，并记录光学可读信号。

42. 发明申请

US20050205424A1 Apparatus and process for sensing fluoro species in semiconductor processing systems 有权
公开(公告)号：US20050205424A1
公开(公告)日：2005-09-22
申请号：US11057734
申请日：2005-02-14
申请人： Frank Dimeo , Philip Chen , Jeffrey Neuner , James Welch , Michele Stawasz , Thomas Baum , MacKenzie King , Ing-Shin Chen , Jeffrey Roeder
发明人： Frank Dimeo , Philip Chen , Jeffrey Neuner , James Welch , Michele Stawasz , Thomas Baum , MacKenzie King , Ing-Shin Chen , Jeffrey Roeder
IPC分类号： G01N33/00 , G01N27/26
CPC分类号： G01N27/128 , H01J37/3244 , H01J37/32935 , H01J37/32981 , Y10T29/49007 , Y10T436/17 , Y10T436/19
摘要： A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.

43. 发明申请

US20060115596A1 Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film material 有权
公开(公告)号：US20060115596A1
公开(公告)日：2006-06-01
申请号：US11328582
申请日：2006-01-10
申请人： Peter Buskirk , Jeffrey Roeder , Steven Bilodeau , Michael Russell , Stephen Johnston , Daniel Vestyck , Thomas Baum
发明人： Peter Buskirk , Jeffrey Roeder , Steven Bilodeau , Michael Russell , Stephen Johnston , Daniel Vestyck , Thomas Baum
IPC分类号： C07F7/30 , C07F7/22 , C07F7/28
CPC分类号： C07C49/92 , C04B35/491 , C04B2235/441 , C04B2235/449 , C04B2235/963 , C07F7/003 , C23C16/409 , H01G4/1245 , H01G4/33 , H01L21/31691 , H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A novel lead zirconium titanate (PZT) material having unique properties and application for PZT thin film capacitors and ferroelectric capacitor structures, e.g., FeRAMs, employing such thin film material. The PZT material is scalable, being dimensionally scalable, pulse length scalable and/or E-field scalable in character, and is useful for ferroelectric capacitors over a wide range of thicknesses, e.g., from about 20 nanometers to about 150 nanometers, and a range of lateral dimensions extending to as low as 0.15 μm. Corresponding capacitor areas (i.e., lateral scaling) in a preferred embodiment are in the range of from about 104 to about 10−2 μm2. The scalable PZT material of the invention may be formed by liquid delivery MOCVD, without PZT film modification techniques such as acceptor doping or use of film modifiers (e.g., Nb, Ta, La, Sr, Ca and the like).

44. 发明申请

US20050199496A1 Apparatus and process for sensing fluoro species in semiconductor processing systems 有权
标题翻译：用于在半导体处理系统中感测氟物质的装置和方法
公开(公告)号：US20050199496A1
公开(公告)日：2005-09-15
申请号：US11057594
申请日：2005-02-14
申请人： Frank Dimeo , Philip Chen , Jeffrey Neuner , James Welch , Michele Stawasz , Thomas Baum , Mackenzie King , Ing-Shin Chen , Jeffrey Roeder
发明人： Frank Dimeo , Philip Chen , Jeffrey Neuner , James Welch , Michele Stawasz , Thomas Baum , Mackenzie King , Ing-Shin Chen , Jeffrey Roeder
IPC分类号： G01N33/00 , G01N27/26
CPC分类号： G01N27/128 , H01J37/3244 , H01J37/32935 , H01J37/32981 , Y10T29/49007 , Y10T436/17 , Y10T436/19
摘要： A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.
摘要翻译：用于检测含有其的气体中的含氟物质的气体检测器和方法，例如用HF，NF 3等进行蚀刻清洁的半导体加工工具的流出物。优选的检测器结构布置采用基于微机电系统（MEMS）的器件结构和/或独立的金属元件，其在需要高温感测时用作感测部件并且可选地作为热源。独立的金属元件可以直接制造在标准芯片载体/器件封装上，使得封装成为检测器的平台。

45. 发明申请

US20050042136A1 Colorimetric gas detector and windowed process chamber 审中-公开
标题翻译：比色气体检测仪和窗口处理室
公开(公告)号：US20050042136A1
公开(公告)日：2005-02-24
申请号：US10642848
申请日：2003-08-18
申请人： Paul Marganski , Joseph Sweeney , Glenn Tom , Jose Arno , Thomas Baum , Jeffrey Roeder , James Hills
发明人： Paul Marganski , Joseph Sweeney , Glenn Tom , Jose Arno , Thomas Baum , Jeffrey Roeder , James Hills
IPC分类号： G01N21/78 , G01N21/00
CPC分类号： G01N21/783
摘要： A windowed chamber, e.g., a semiconductor manufacturing process chamber such as a scrubber, deposition chamber, thermal reactor, or the like, including a port with a radiation-transmissive window therein. Interiorly disposed within the chamber is (i) a disposable film on an interior surface of the window and/or (ii) a colorimetric medium disposed in viewable relationship to the window, so that a colorimetric change is perceivable through the window, e.g., visually or by optical sensing device, when the colorimetric medium is exposed to target gas species. Also disclosed is a gas detection article including a polymeric material that is colorimetrically responsive to the presence of at least one target gas species, in exposure thereto.
摘要翻译：诸如洗涤器，沉积室，热反应器等半导体制造处理室的窗口化室，包括其中具有辐射透射窗口的端口。内部设置在腔室内的是（i）窗口内表面上的一次性薄膜和/或（ii）以与窗口可视的关系设置的比色介质，使得通过窗口可感知到比色变化，例如，视觉上或通过光学感测装置，当比色介质暴露于目标气体种类时。还公开了一种气体检测制品，其包括在暴露于其中时比色测定至少一种目标气体种类的存在的聚合物材料。

46. 发明申请

US20060154186A1 Composition useful for removal of post-etch photoresist and bottom anti-reflection coatings 审中-公开
标题翻译：用于去除蚀刻后光致抗蚀剂和底部防反射涂层的组合物
公开(公告)号：US20060154186A1
公开(公告)日：2006-07-13
申请号：US11031118
申请日：2005-01-07
申请人： David Minsek , Weihua Wang , David Bernhard , Thomas Baum
发明人： David Minsek , Weihua Wang , David Bernhard , Thomas Baum
IPC分类号： G03C5/00
CPC分类号： G03F7/425 , G03F7/091
摘要： An aqueous-based composition and process for removing hardened photoresist and/or bottom anti-reflective coating (BARC) material from a substrate having same thereon. The aqueous-based composition includes at least one chaotropic solute, at least one alkaline base, and deionized water. The composition achieves high-efficiency removal of hardened photoresist and/or BARC material in the manufacture of integrated circuitry without adverse effect to metal species on the substrate, such as copper, and without damage to low-k dielectric materials employed in the semiconductor architecture.
摘要翻译：一种水性组合物和从其上具有其的基材去除硬化的光致抗蚀剂和/或底部抗反射涂层（BARC）材料的方法。水基组合物包括至少一种离液序列溶质，至少一种碱性碱和去离子水。该组合物在集成电路的制造中实现了高效去除硬化的光致抗蚀剂和/或BARC材料，而不会对衬底（例如铜）上的金属物质产生不利影响，并且不损害在半导体结构中使用的低k电介质材料。

47. 发明授权

US06814631B2 Electrical terminal for surge protection cartridge 失效
标题翻译：电涌保护盒用电气端子
公开(公告)号：US06814631B2
公开(公告)日：2004-11-09
申请号：US10114138
申请日：2002-04-02
申请人： Thomas Baum , Albert McGovern , Daniel Hoeft , Jane Lee
发明人： Thomas Baum , Albert McGovern , Daniel Hoeft , Jane Lee
IPC分类号： H01R1311
CPC分类号： H01R13/113 , H01R9/2441 , H01R11/22 , H01R13/112 , H01R13/6666
摘要： An electrical terminal and a system of the terminal and a housing is disclosed as an example of the present invention. The electrical terminal and the housing have a number of advantages including being sufficiently stiff to prevent arcing and physical damage to the electrical terminal upon being exposed to surge current/voltage. The terminal includes a contact with a base portion from which two spaced apart arms extend outwardly. First portions of the arms are generally parallel to one another. Second portions of the arms converge toward each other and then flare outwardly along third portions of the arms. At the junction of the second and third portions, there is a contact region formed to receive the lead of a surge protection device. The terminal is enclosed in an opening in the electrically insulative housing, the opening being bordered by walls closely adjacent to the first portions of the arms. The spacing of the walls from the arms is about 0.001 inches on each side of the terminal. When the terminal is exposed to a surge current/voltage, the walls stiffen the terminal and prevent arcing and physical damage.

48. 发明申请

US20060084272A1 Polishing slurries for copper and associated materials 有权
标题翻译：抛光用于铜和相关材料的浆料
公开(公告)号：US20060084272A1
公开(公告)日：2006-04-20
申请号：US11145807
申请日：2005-06-06
申请人： William Wojtczak , Thomas Baum , Long Nguyen , Cary Regulski
发明人： William Wojtczak , Thomas Baum , Long Nguyen , Cary Regulski
IPC分类号： H01L21/461
CPC分类号： H01L21/3212 , C09G1/02
摘要： A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that includes a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries can include silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
摘要翻译：一种化学机械抛光浆料和使用该浆料抛光铜，阻挡材料和介电材料的方法，其包括第一和第二浆料。第一种浆料对铜的去除率高，在阻隔材料上的去除率低。第二种浆料对阻隔材料的去除率高，对铜和介电材料的去除率低。第一和第二浆料可以包括二氧化硅颗粒，氧化剂，腐蚀抑制剂和清洁剂。

49. 发明申请

US20060063687A1 Composition and process for ashless removal of post-etch photoresist and/or bottom anti-reflective material on a substrate 审中-公开
标题翻译：用于在基底上无蚀刻去除蚀刻后光致抗蚀剂和/或底部抗反射材料的组合物和方法
公开(公告)号：US20060063687A1
公开(公告)日：2006-03-23
申请号：US10944491
申请日：2004-09-17
申请人： David Minsek , David Bernhard , Thomas Baum
发明人： David Minsek , David Bernhard , Thomas Baum
IPC分类号： C11D7/32
CPC分类号： C11D7/3209 , C11D11/0047 , C23C22/63 , C23G1/20
摘要： An aqueous-based composition and process for removing photoresist and/or bottom anti-reflective coating (BARC) material from a substrate having such material(s) thereon. The aqueous-based composition includes a quaternary ammonium base, at least one co-solvent, and optionally a chelator. The composition achieves high-efficiency removal of photoresist and/or BARC material in the manufacture of integrated circuitry without adverse effect on metal species on the substrate, such as copper, and without damage to SiOC-based dielectric materials employed in the semiconductor architecture.
摘要翻译：一种用于从其上具有这种材料的基材去除光致抗蚀剂和/或底部抗反射涂层（BARC）材料的水基组合物和方法。水基组合物包括季铵碱，至少一种共溶剂和任选的螯合剂。该组合物在集成电路的制造中实现了光致抗蚀剂和/或BARC材料的高效去除，而对衬底（例如铜）上的金属物质没有不利影响，并且不损坏半导体结构中使用的基于SiOC的介电材料。

50. 发明申请

US20050227482A1 Composition useful for removal of bottom anti-reflection coatings from patterned ion-implanted photoresist wafers 审中-公开
标题翻译：用于从图案化离子注入的光致抗蚀剂晶片去除底部防反射涂层的组合物
公开(公告)号：US20050227482A1
公开(公告)日：2005-10-13
申请号：US10807858
申请日：2004-03-24
申请人： Michael Korzenski , Thomas Baum
发明人： Michael Korzenski , Thomas Baum
IPC分类号： C11D3/02 , C11D3/20 , C11D3/39 , C11D3/43 , C11D11/00 , G03F7/09 , G03F7/42 , H01L21/311 , H01L21/44 , H01L21/4763
CPC分类号： H01L21/31133 , C11D3/042 , C11D3/046 , C11D3/2075 , C11D3/3947 , C11D3/43 , C11D11/0047 , G03F7/091 , G03F7/422 , G03F7/425 , H01L21/31111
摘要： A method and composition for removing a bottom anti-reflection coating (BARC) layer from semiconductor substrates having such BARC layers is described. The removal composition includes a supercritical fluid, a co-solvent, an etchant and a surfactant. Such removal compositions overcome the intrinsic deficiency of SCCO2 as a removal reagent, viz., the non-polar character of SCCO2 and its associated inability to solubilize species such as inorganic salts and polar organic compounds that must be removed from the semiconductor substrate.
摘要翻译：描述了从具有这种BARC层的半导体衬底去除底部抗反射涂层（BARC）层的方法和组合物。除去组合物包括超临界流体，共溶剂，蚀刻剂和表面活性剂。这种去除组合物克服了作为去除试剂的SCCO 2 N的固有缺陷，即SCCO 2的非极性特征，并且其不能溶解物质如无机物必须从半导体衬底去除的盐和极性有机化合物。

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