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1. 发明申请

US20060084272A1 Polishing slurries for copper and associated materials 有权
标题翻译：抛光用于铜和相关材料的浆料
公开(公告)号：US20060084272A1
公开(公告)日：2006-04-20
申请号：US11145807
申请日：2005-06-06
申请人： William Wojtczak , Thomas Baum , Long Nguyen , Cary Regulski
发明人： William Wojtczak , Thomas Baum , Long Nguyen , Cary Regulski
IPC分类号： H01L21/461
CPC分类号： H01L21/3212 , C09G1/02
摘要： A chemical mechanical polishing slurry and method for using the slurry for polishing copper, barrier material and dielectric material that includes a first and second slurry. The first slurry has a high removal rate on copper and a low removal rate on barrier material. The second slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first and second slurries can include silica particles, an oxidizing agent, a corrosion inhibitor, and a cleaning agent.
摘要翻译：一种化学机械抛光浆料和使用该浆料抛光铜，阻挡材料和介电材料的方法，其包括第一和第二浆料。第一种浆料对铜的去除率高，在阻隔材料上的去除率低。第二种浆料对阻隔材料的去除率高，对铜和介电材料的去除率低。第一和第二浆料可以包括二氧化硅颗粒，氧化剂，腐蚀抑制剂和清洁剂。

2. 发明申请

US20060160475A1 Chemical mechanical polishing compositions for metal and associated materials and method of using same 审中-公开
公开(公告)号：US20060160475A1
公开(公告)日：2006-07-20
申请号：US11386307
申请日：2006-03-22
申请人： Ying Ma , William Wojtczak , Cary Regulski , Thomas Baum , David Bernhard , Deepak Verma
发明人： Ying Ma , William Wojtczak , Cary Regulski , Thomas Baum , David Bernhard , Deepak Verma
IPC分类号： B24B7/30
CPC分类号： H01L21/3212 , B24B37/0056 , B24B37/044 , C09G1/02
摘要： A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.

3. 发明授权

US07029373B2 Chemical mechanical polishing compositions for metal and associated materials and method of using same 失效
公开(公告)号：US07029373B2
公开(公告)日：2006-04-18
申请号：US09929564
申请日：2001-08-14
申请人： Ying Ma , William Wojtczak , Cary Regulski , Thomas H. Baum , David D. Bernhard , Deepak Verma
发明人： Ying Ma , William Wojtczak , Cary Regulski , Thomas H. Baum , David D. Bernhard , Deepak Verma
IPC分类号： B24B1/00
CPC分类号： H01L21/3212 , B24B37/0056 , B24B37/044 , C09G1/02
摘要： A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.

4. 发明授权

US06692546B2 Chemical mechanical polishing compositions for metal and associated materials and method of using same 有权
标题翻译：金属及相关材料的化学机械抛光组合物及其使用方法
公开(公告)号：US06692546B2
公开(公告)日：2004-02-17
申请号：US09932415
申请日：2001-08-17
申请人： Ying Ma , William Wojtczak , Cary Regulski , Thomas H. Baum , David D. Bernhard , Deepak Verma
发明人： Ying Ma , William Wojtczak , Cary Regulski , Thomas H. Baum , David D. Bernhard , Deepak Verma
IPC分类号： C09G102
CPC分类号： H01L21/3212 , B24B37/0056 , B24B37/044 , C09G1/02
摘要： A chemical mechanical polishing slurry composition and method for using the slurry composition for polishing copper, barrier material and dielectric material that comprises first and second-step slurries. The first-step slurry has a high removal rate on copper and a low removal rate on barrier material. The second-step slurry has a high removal rate on barrier material and a low removal rate on copper and dielectric material. The first slurry comprises at least an organic polymeric abrasive.
摘要翻译：一种化学机械抛光浆料组合物和使用该浆料组合物抛光铜，阻挡材料和电介质材料的方法，其包括第一和第二步浆料。第一步浆料对铜的去除率高，阻隔材料的去除率低。第二步浆料对阻隔材料的去除率高，铜和介电材料的去除率低。第一浆液至少包含有机聚合物研磨剂。

5. 发明申请

US20050215446A1 Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate 有权
标题翻译：含有铜特异性腐蚀抑制剂的清洁组合物，用于清洗半导体衬底上的无机残留物
公开(公告)号：US20050215446A1
公开(公告)日：2005-09-29
申请号：US11135892
申请日：2005-05-24
申请人： William Wojtczak , Ma. Seijo , David Bernhard , Long Nguyen
发明人： William Wojtczak , Ma. Seijo , David Bernhard , Long Nguyen
IPC分类号： C11D3/04 , C09K13/00 , C09K13/08 , C11D1/00 , C11D3/20 , C11D3/30 , C11D3/32 , C11D7/08 , C11D7/10 , C11D7/26 , C11D7/28 , C11D7/32 , C11D7/34 , C11D7/60 , C11D11/00 , C11D17/08 , C23F11/14 , C23G1/10 , G03F7/42 , H01L21/02 , H01L21/302 , H01L21/304 , H01L21/306 , H01L21/3065 , H01L21/321 , H01L21/3213
CPC分类号： C11D3/30 , C09K13/00 , C09K13/08 , C11D3/32 , C11D3/33 , C11D7/10 , C11D7/264 , C11D7/265 , C11D7/266 , C11D7/28 , C11D7/3209 , C11D7/3218 , C11D7/3245 , C11D7/3254 , C11D7/3263 , C11D7/3272 , C11D7/3281 , C11D7/34 , C11D11/0047 , C23F11/142 , C23F11/146 , C23G1/103 , C23G1/106 , G03F7/425 , H01L21/02063 , H01L21/02071 , H01L21/02074 , H01L21/32136
摘要： A semiconductor wafer cleaning formulation, including 1-35% wt. fluoride source, 20-60% wt. organic amine(s), 0.1-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 20-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
摘要翻译：半导体晶片清洁配方，包括1-35重量％氟化物源，20-60重量％有机胺，0.1-40重量％含氮组分，例如含氮羧酸或亚胺，20-50重量％水，0-21重量％。金属螯合剂。该制剂可用于在抗蚀剂等离子体灰化步骤之后从晶片中除去残余物，例如含有精细铜互连结构的半导体晶片的无机残渣。

6. 发明申请

US20050124517A1 Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrates 有权
标题翻译：包含用于清洁半导体衬底上的无机残留物的铜特异性缓蚀剂的水性清洁组合物
公开(公告)号：US20050124517A1
公开(公告)日：2005-06-09
申请号：US11042531
申请日：2005-01-24
申请人： William Wojtczak , Ma. Seijo , David Bernhard , Long Nguyen
发明人： William Wojtczak , Ma. Seijo , David Bernhard , Long Nguyen
IPC分类号： C11D3/04 , C09K13/00 , C09K13/08 , C11D1/00 , C11D3/20 , C11D3/30 , C11D3/32 , C11D7/10 , C11D7/26 , C11D7/28 , C11D7/32 , C11D7/34 , C11D11/00 , C11D17/08 , G03F7/42 , H01L21/302 , H01L21/304 , H01L21/306 , H01L21/3065
CPC分类号： H01L21/02074 , C09K13/00 , C09K13/08 , C11D7/10 , C11D7/264 , C11D7/265 , C11D7/266 , C11D7/28 , C11D7/3209 , C11D7/3218 , C11D7/3245 , C11D7/3254 , C11D7/3263 , C11D7/3281 , C11D7/34 , C11D11/0047 , G03F7/425 , H01L21/02063 , H01L21/02071
摘要： A semiconductor wafer cleaning formulation, including 1-21% wt. fluoride source, 20-55% wt. organic amine(s), 0.5-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 23-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.
摘要翻译：半导体晶片清洁配方，包括1-21％氟化物源，20-55重量％有机胺，0.5-40重量％含氮组分，例如含氮羧酸或亚胺，23-50重量％水，0-21重量％。金属螯合剂。该制剂可用于在抗蚀剂等离子体灰化步骤之后从晶片中除去残余物，例如含有精细铜互连结构的半导体晶片的无机残渣。

7. 发明申请

US20050003674A1 Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate 有权
公开(公告)号：US20050003674A1
公开(公告)日：2005-01-06
申请号：US10861158
申请日：2004-06-04
申请人： William Wojtczak , Ma Seijo , David Bernhard , Long Nguyen
发明人： William Wojtczak , Ma Seijo , David Bernhard , Long Nguyen
IPC分类号： C11D3/04 , C09K13/00 , C09K13/08 , C11D1/00 , C11D3/20 , C11D3/30 , C11D3/32 , C11D7/10 , C11D7/26 , C11D7/28 , C11D7/32 , C11D7/34 , C11D11/00 , C11D17/08 , G03F7/42 , H01L21/302 , H01L21/304 , H01L21/306 , H01L21/3065
CPC分类号： H01L21/02074 , C09K13/00 , C09K13/08 , C11D7/10 , C11D7/264 , C11D7/265 , C11D7/266 , C11D7/28 , C11D7/3209 , C11D7/3218 , C11D7/3245 , C11D7/3254 , C11D7/3263 , C11D7/3281 , C11D7/34 , C11D11/0047 , G03F7/425 , H01L21/02063 , H01L21/02071
摘要： A semiconductor wafer cleaning formulation, including 1-21% wt. fluoride source, 20-55% wt. organic amine(s), 0.5-40% wt. nitrogenous component, e.g., a nitrogen-containing carboxylic acid or an imine, 23-50% wt. water, and 0-21% wt. metal chelating agent(s). The formulations are useful to remove residue from wafers following a resist plasma ashing step, such as inorganic residue from semiconductor wafers containing delicate copper interconnecting structures.

8. 发明申请

US20080116170A1 SELECTIVE METAL WET ETCH COMPOSITION AND PROCESS 审中-公开
标题翻译：选择性金属湿蚀蚀组合物和工艺
公开(公告)号：US20080116170A1
公开(公告)日：2008-05-22
申请号：US11942157
申请日：2007-11-19
申请人： Sian Collins , William Wojtczak
发明人： Sian Collins , William Wojtczak
IPC分类号： C23F1/24 , C09K13/06
CPC分类号： H01L21/32134 , C23F1/28 , C23F1/30
摘要： Composition and a process using the composition for selectively wet etching metal including depositing metal on a silicon surface; applying energy to cause respective portions of the metal and silicon to form silicide, leaving a quantity of unreacted metal; selectively wet etching the unreacted metal by applying to the unreacted metal a composition including HCl, HBr, an ammonium halide, an amine hydrohalide salt, a quaternary ammonium halide, a quaternary phosphonium halide or a mixture of any two or more thereof; a nitrogen oxide compound; a stabilizer for the nitrogen oxide, comprising a glycol, a glyme, an ether, a polyol or a mixture of any two or more thereof; and water. In one embodiment, the composition includes an ammonium halide, an amine hydrohalide salt, a quaternary ammonium halide, a quaternary phosphonium halide or a mixture of any two or more thereof; a nitrogen oxide compound; and water.
摘要翻译：组合物和使用所述组合物的方法，所述组合物用于选择性湿蚀刻金属，包括在硅表面上沉积金施加能量以使金属和硅的各部分形成硅化物，留下一定数量的未反应的金属; 通过向未反应的金属施加包括HCl，HBr，卤化铵，胺氢卤化物盐，季铵卤化物，卤化鏻或其任何两种或更多种的混合物的组合物，选择性地湿法蚀刻未反应的金属。氮氧化物; 包含二醇，甘醇二甲醚，醚，多元醇或其任何两种或多种的混合物的氮氧化物稳定剂; 和水。在一个实施方案中，组合物包括卤化铵，胺氢卤酸盐，季铵卤化物，卤化鏻季铵盐或其任何两种或多种的混合物; 氮氧化物; 和水。

9. 发明申请

US20080210900A1 Selective Wet Etchings Of Oxides 审中-公开
标题翻译：氧化物的选择性湿蚀刻
公开(公告)号：US20080210900A1
公开(公告)日：2008-09-04
申请号：US11914241
申请日：2006-04-25
申请人： William Wojtczak , Sian Collins
发明人： William Wojtczak , Sian Collins
IPC分类号： C09K13/08 , C03C25/52
CPC分类号： H01L21/31111
摘要： The present invention relates to a wet etching composition including a sulfonic acid, a phosphonic acid, a phosphinic acid or a mixture of any two or more thereof, and a fluoride, and to a process of selectively etching oxides relative to nitrides, high-nitrogen content silicon oxynitride, metal, silicon or silicide. The process includes providing a substrate comprising oxide and one or more of nitride, high-nitrogen content silicon oxynitride, metal, silicon or silicide in which the oxide is to be etched; applying to the substrate for a time sufficient to remove a desired quantity of oxide from the substrate the etching composition; and removing the etching composition, in which the oxide is removed selectively.
摘要翻译：本发明涉及包含磺酸，膦酸，次膦酸或其任何两种或多种的混合物和氟化物的湿法蚀刻组合物，以及选择性地相对于氮化物，高氮的氧化物蚀刻的方法含硅氧氮化物，金属，硅或硅化物。该方法包括提供包含氧化物和氮化物，高氮含量的氮氧化硅，金属，硅或硅化物中的一种或多种氧化物的衬底，其中氧化物被蚀刻; 向衬底施加足以从衬底去除所需量的氧化物的时间的蚀刻组合物; 并除去选择性地除去氧化物的蚀刻组合物。

10. 发明申请

US20060226122A1 Selective wet etching of metal nitrides 审中-公开
标题翻译：金属氮化物的选择性湿法蚀刻
公开(公告)号：US20060226122A1
公开(公告)日：2006-10-12
申请号：US11387597
申请日：2006-03-23
申请人： William Wojtczak , Dean DeWulf
发明人： William Wojtczak , Dean DeWulf
IPC分类号： C09K13/00 , B44C1/22 , H01L21/461 , C09K13/04
CPC分类号： C09K13/06 , C09K13/00 , C09K13/02 , H01L21/32134
摘要： In one embodiment, the present invention relates to a wet etching composition including hydrogen peroxide; an organic onium hydroxide; and an acid. In another embodiment, the invention relates to a method of wet etching metal nitride selectively to surrounding structures comprising one or more of silicon, silicon oxides, glass, PSG, BPSG, BSG, silicon oxynitride, silicon nitride and silicon oxycarbide and combinations and mixtures thereof and/or photoresist materials, including steps of providing a wet etching composition including hydrogen peroxide, an organic onium hydroxide, and an organic acid; and exposing a metal nitride to be etched with the wet etching composition for a time and at a temperature effective to etch the metal nitride selectively to the surrounding structures.
摘要翻译：在一个实施方案中，本发明涉及包含过氧化氢的湿蚀刻组合物; 有机氢氧化鎓; 和酸。在另一个实施方案中，本发明涉及一种将金属氮化物选择性地湿式蚀刻以包括硅，氧化硅，玻璃，PSG，BPSG，BSG，氮氧化硅，氮化硅和碳氧化硅中的一种或多种的金属氮化物及其组合和混合物的方法和/或光致抗蚀剂材料，包括提供包括过氧化氢，有机氢氧化鎓和有机酸的湿蚀刻组合物的步骤; 以及用湿蚀刻组合物暴露待蚀刻的金属氮化物一段时间并且有效地将金属氮化物选择性地蚀刻到周围结构。

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