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1. 发明申请

US20050230258A1 Apparatus and process for sensing fluoro species in semiconductor processing systems 审中-公开
公开(公告)号：US20050230258A1
公开(公告)日：2005-10-20
申请号：US11057735
申请日：2005-02-14
申请人： Frank Dimeo , Philip Chen , Jeffrey Neuner , James Welch , Michele Stawasz , Thomas Baum , Mackenzie King , Ing-Shin Chen , Jeffrey Roeder
发明人： Frank Dimeo , Philip Chen , Jeffrey Neuner , James Welch , Michele Stawasz , Thomas Baum , Mackenzie King , Ing-Shin Chen , Jeffrey Roeder
IPC分类号： G01N33/00 , C25D5/48 , G01N27/26
CPC分类号： G01N27/128 , H01J37/3244 , H01J37/32935 , H01J37/32981 , Y10T29/49007 , Y10T436/17 , Y10T436/19
摘要： A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.

2. 发明申请

US20050205424A1 Apparatus and process for sensing fluoro species in semiconductor processing systems 有权
公开(公告)号：US20050205424A1
公开(公告)日：2005-09-22
申请号：US11057734
申请日：2005-02-14
申请人： Frank Dimeo , Philip Chen , Jeffrey Neuner , James Welch , Michele Stawasz , Thomas Baum , MacKenzie King , Ing-Shin Chen , Jeffrey Roeder
发明人： Frank Dimeo , Philip Chen , Jeffrey Neuner , James Welch , Michele Stawasz , Thomas Baum , MacKenzie King , Ing-Shin Chen , Jeffrey Roeder
IPC分类号： G01N33/00 , G01N27/26
CPC分类号： G01N27/128 , H01J37/3244 , H01J37/32935 , H01J37/32981 , Y10T29/49007 , Y10T436/17 , Y10T436/19
摘要： A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.

3. 发明申请

US20050199496A1 Apparatus and process for sensing fluoro species in semiconductor processing systems 有权
标题翻译：用于在半导体处理系统中感测氟物质的装置和方法
公开(公告)号：US20050199496A1
公开(公告)日：2005-09-15
申请号：US11057594
申请日：2005-02-14
申请人： Frank Dimeo , Philip Chen , Jeffrey Neuner , James Welch , Michele Stawasz , Thomas Baum , Mackenzie King , Ing-Shin Chen , Jeffrey Roeder
发明人： Frank Dimeo , Philip Chen , Jeffrey Neuner , James Welch , Michele Stawasz , Thomas Baum , Mackenzie King , Ing-Shin Chen , Jeffrey Roeder
IPC分类号： G01N33/00 , G01N27/26
CPC分类号： G01N27/128 , H01J37/3244 , H01J37/32935 , H01J37/32981 , Y10T29/49007 , Y10T436/17 , Y10T436/19
摘要： A gas detector and process for detecting a fluorine-containing species in a gas containing same, e.g., an effluent of a semiconductor processing tool undergoing etch cleaning with HF, NF3, etc. The detector in a preferred structural arrangement employs a microelectromechanical system (MEMS)-based device structure and/or a free-standing metal element that functions as a sensing component and optionally as a heat source when elevated temperature sensing is required. The free-standing metal element can be fabricated directly onto a standard chip carrier/device package so that the package becomes a platform of the detector.
摘要翻译：用于检测含有其的气体中的含氟物质的气体检测器和方法，例如用HF，NF 3等进行蚀刻清洁的半导体加工工具的流出物。优选的检测器结构布置采用基于微机电系统（MEMS）的器件结构和/或独立的金属元件，其在需要高温感测时用作感测部件并且可选地作为热源。独立的金属元件可以直接制造在标准芯片载体/器件封装上，使得封装成为检测器的平台。

4. 发明申请

US20080134757A1 Method And Apparatus For Monitoring Plasma Conditions In An Etching Plasma Processing Facility 审中-公开
标题翻译：用于在蚀刻等离子体处理设备中监测等离子体条件的方法和装置
公开(公告)号：US20080134757A1
公开(公告)日：2008-06-12
申请号：US11908668
申请日：2006-03-15
申请人： Ing-Shin Chen , Jeffrey W. Neuner , Frank Dimeo , Philip S.H. Chen , James J. Welch , Jeffrey F. Roeder
发明人： Ing-Shin Chen , Jeffrey W. Neuner , Frank Dimeo , Philip S.H. Chen , James J. Welch , Jeffrey F. Roeder
IPC分类号： G01N25/36
CPC分类号： B81C1/00587 , B81C99/0065 , B81C2201/0138 , C23C16/4405 , G01N27/16 , H01J37/32935
摘要： A gas sensor and method of gas sensing, e.g., of a type as useful with downstream sensor elements for determining the plasma conditions (e.g., plasma etching end point) in a semiconductor etching facility that utilizes halogen-containing plasma and/or oxygen-containing plasma. Such sensor elements are capable of exhibiting temperature change in the presence of energetic gas species, e.g., fluorine, chlorine, iodine, bromine, oxygen, and derivatives and radicals thereof that are generated by the plasma, and correspondingly generating an output signal indicative of such temperature change for determination of the plasma conditions in the etching plasma processing facility.
摘要翻译：一种气体传感器和气体传感方法，例如，对于使用含卤素等离子体和/或含氧的半导体蚀刻设备中用于确定等离子体条件（例如，等离子体蚀刻终点）的下游传感器元件有用的类型等离子体。这样的传感器元件能够在由等离子体产生的能量气体物质例如氟，氯，碘，溴，氧及其衍生物和自由基的存在下表现出温度变化，并且相应地产生指示其的输出信号用于确定蚀刻等离子体处理设备中的等离子体条件的温度变化。

5. 发明申请

US20060086376A1 Novel methods for cleaning ion implanter components 有权
标题翻译：清洗离子注入机组件的新方法
公开(公告)号：US20060086376A1
公开(公告)日：2006-04-27
申请号：US10973673
申请日：2004-10-26
申请人： Frank Dimeo , James Dietz , W. Olander , Robert Kaim , Steven Bishop , Jeffrey Neuner
发明人： Frank Dimeo , James Dietz , W. Olander , Robert Kaim , Steven Bishop , Jeffrey Neuner
IPC分类号： B08B6/00 , B08B9/00
CPC分类号： C23G5/00 , C23C14/564 , H01J37/08 , H01J37/32862 , H01J2237/022 , H01J2237/31701
摘要： A method and apparatus for cleaning residue from components of an ion source region of an ion implanter used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive halide composition for sufficient time and under sufficient conditions to at least partially remove the residue. The gas-phase reactive halide composition is chosen to react selectively with the residue, while not reacting with the components of the ion source region or the vacuum chamber.
摘要翻译：一种用于清洁用于制造微电子器件的离子注入机的离子源区域的组分的残留物的方法和装置。为了有效地除去残留物，将组分与气相反应性卤化物组合物接触足够的时间并在足够的条件下至少部分地除去残余物。选择气相反应性卤化物组合物与残余物选择性反应，而不与离子源区域或真空室的组分反应。

6. 发明申请

US20100154835A1 CLEANING OF SEMICONDUCTOR PROCESSING SYSTEMS 有权
标题翻译：半导体加工系统的清洁
公开(公告)号：US20100154835A1
公开(公告)日：2010-06-24
申请号：US12298727
申请日：2007-04-26
申请人： Frank Dimeo , James Dietz , Karl W. Olander , Robert Kaim , Steven Bishop , Jeffrey W. Neuner , Jose Arno , Paul J. Marganski , Joseph D. Sweeney , David Eldridge , Sharad Yedave , Oleg Byl , Gregory T. Stauf
发明人： Frank Dimeo , James Dietz , Karl W. Olander , Robert Kaim , Steven Bishop , Jeffrey W. Neuner , Jose Arno , Paul J. Marganski , Joseph D. Sweeney , David Eldridge , Sharad Yedave , Oleg Byl , Gregory T. Stauf
IPC分类号： B08B5/00
CPC分类号： C23C14/564 , C23C16/4405 , H01J37/32412 , H01J37/32862
摘要： A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part. Particularly preferred gas-phase reactive materials utilized comprise gaseous compounds such as XeF2, XeF4, XeF6, NF3, IF5, IF7, SF6, C2F6, F2, CF4, KrF2, Cl2, HCl, ClF3, ClO2, N2F4, N2F2, N3F, NFH2, NH2F, HOBr, Br2, C3F8, C4F8, C5F8, CHF3, CH2F2, CH3F, COF2, HF, C2HF5, C2H2F4, C2H3F3, C2H4F2, C2H5F, C3F6, and organochlorides such as COCl2, CCl4, CHCl3, CH2Cl2 and CH3Cl.
摘要翻译：一种清洁残留物的方法和装置，用于制造微电子装置中使用的半导体处理系统的组件。为了有效地除去残留物，将组分与气相反应性材料接触足够的时间和足够的条件以至少部分地除去残余物。当残留物和构成组分的材料不同时，气相反应性材料与残余物选择性反应，并与构成离子注入机的组分的材料具有最低的反应性。当残留物和构成组分的材料相同时，气相反应性材料可以与残留物和组分部分反应。使用的特别优选的气相反应性材料包括气态化合物如XeF 2，XeF 4，XeF 6，NF 3，IF 5，IF 7，SF 6，C 2 F 6，F 2，CF 4，KrF 2，Cl 2，HCl，ClF 3，ClO 2，N 2 F 4，N 2 F 2，N 3 F，，NH2F，HOBr，Br2，C3F8，C4F8，C5F8，CHF3，CH2F2，CH3F，COF2，HF，C2HF5，C2H2F4，C2H3F3，C2H4F2，C2H5F，C3F6和有机氯化物，如COCl2，CCl4，CHCl3，CH2Cl2和CH3Cl。

7. 发明授权

US08603252B2 Cleaning of semiconductor processing systems 有权
标题翻译：半导体处理系统的清洁
公开(公告)号：US08603252B2
公开(公告)日：2013-12-10
申请号：US12298727
申请日：2007-04-26
申请人： Frank Dimeo , James Dietz , W. Karl Olander , Robert Kaim , Steven Bishop , Jeffrey W. Neuner , Jose Arno , Paul J. Marganski , Joseph D. Sweeney , David Eldridge , Sharad Yedave , Oleg Byl , Gregory T. Stauf
发明人： Frank Dimeo , James Dietz , W. Karl Olander , Robert Kaim , Steven Bishop , Jeffrey W. Neuner , Jose Arno , Paul J. Marganski , Joseph D. Sweeney , David Eldridge , Sharad Yedave , Oleg Byl , Gregory T. Stauf
IPC分类号： B08B7/00
CPC分类号： C23C14/564 , C23C16/4405 , H01J37/32412 , H01J37/32862
摘要： A method and apparatus for cleaning residue from components of semiconductor processing systems used in the fabrication of microelectronic devices. To effectively remove residue, the components are contacted with a gas-phase reactive material for sufficient time and under sufficient conditions to at least partially remove the residue. When the residue and the material from which the components are constructed are different, the gas-phase reactive material is selectively reactive with the residue and minimally reactive with the materials from which the components of the ion implanter are constructed. When the residue and the material from which the components are constructed is the same, then the gas-phase reactive material may be reactive with both the residue and the component part. Particularly preferred gas-phase reactive materials utilized comprise gaseous compounds such as XeF2, XeF4, XeF6, NF3, IF5, IF7, SF6, C2F6, F2, CF4, KrF2, Cl2, HCl, ClF3, ClO2, N2F4, N2F2, N3F, NFH2, NH2F, HOBr, Br2, C3F8, C4F8, C5F8, CHF3, CH2F2, CH3F, COF2, HF, C2HF5, C2H2F4, C2H3F3, C2H4F2, C2H5F, C3F6, and organochlorides such as COCl2, CCl4, CHCl3, CH2Cl2 and CH3Cl.
摘要翻译：一种清洁残留物的方法和装置，用于制造微电子装置中使用的半导体处理系统的组件。为了有效地除去残留物，将组分与气相反应性材料接触足够的时间和足够的条件以至少部分地除去残余物。当残留物和构成组分的材料不同时，气相反应性材料与残余物选择性反应，并与构成离子注入机的组分的材料具有最低的反应性。当残留物和构成组分的材料相同时，气相反应性材料可以与残留物和组分部分反应。使用的特别优选的气相反应性材料包括气态化合物如XeF 2，XeF 4，XeF 6，NF 3，IF 5，IF 7，SF 6，C 2 F 6，F 2，CF 4，KrF 2，Cl 2，HCl，ClF 3，ClO 2，N 2 F 4，N 2 F 2，N 3 F，，NH2F，HOBr，Br2，C3F8，C4F8，C5F8，CHF3，CH2F2，CH3F，COF2，HF，C2HF5，C2H2F4，C2H3F3，C2H4F2，C2H5F，C3F6和有机氯化物，如COCl2，CCl4，CHCl3，CH2Cl2和CH3Cl。

8. 发明申请

US20080245676A1 Material Containment System 审中-公开
标题翻译：物料遏制系统
公开(公告)号：US20080245676A1
公开(公告)日：2008-10-09
申请号：US12064625
申请日：2006-08-22
申请人： James V. McManus , Jerrold David Sameth , Frank Dimeo
发明人： James V. McManus , Jerrold David Sameth , Frank Dimeo
IPC分类号： B65B3/00
CPC分类号： B65D7/045 , B65D85/84 , B65D2203/10
摘要： Containment packages (10) having utility for transport of hazardous gases and security systems for controlling access to packages, e.g., hazardous gas containment packages (20). In a specific implementation, a containment package includes an overpack (11) for improving the safety and security of gas-containment vessels during transportation, e.g., air shipment, in which the overpack is pressurized by a protective gas at pressure in excess of the pressure in the gas-containment vessels, and a global positioning system (GPS) coordinated programmable lock and key system (30) is integrated with the containment package for controlled access to the gas-containment vessels only when the GPS component indicates that the containment package is at a specific geographic location.
摘要翻译：具有用于运输危险气体的容纳包装（10）和用于控制进入包装的安全系统，例如危险气体容纳包装（20）。在具体实施中，遏制包装包括用于改善运输过程中气体容纳容器（例如空运）的安全和保护的外包装（11），其中外包装由压力超过压力的保护气体加压在气体储存容器中，并且全球定位系统（GPS）协调的可编程锁和钥匙系统（30）与容纳包集成在一起，仅在GPS组件指示容纳包是在特定的地理位置。

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