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41. 发明授权

US4930916A Paper feeder 失效
标题翻译：送纸器
公开(公告)号：US4930916A
公开(公告)日：1990-06-05
申请号：US277866
申请日：1988-11-30
申请人： Shinsuke Fujiwara
发明人： Shinsuke Fujiwara
IPC分类号： B41J11/38 , B41J11/24 , B41J13/03
CPC分类号： B41J13/03 , B41J11/24
摘要： A paper feeder roller wherein a motor transfers a driving force to a deceleration gear train. The deceleration gear train transfers this force to the shaft of a paper feeder roller which is rotated thereto. A plate connected to the paper feeder roller is rotatable about an axis so that the rotation of the plate rotates the paper feeder roller in and out of engagement with the deceleration gear train. When the paper feeder roller is disengaged with the deceleration gear train, the paper feeder roller can be rotated manually.
摘要翻译：一种供纸辊，其中电动机将驱动力传递到减速齿轮系。减速齿轮系将该力传递给与其旋转的供纸辊的轴。连接到供纸辊的板可以绕轴线旋转，使得板的旋转使供纸辊旋转与减速齿轮系接合。当供纸辊与减速齿轮系分离时，可以手动旋转供纸辊。

42. 发明授权

US08679955B2 Method for forming epitaxial wafer and method for fabricating semiconductor device 有权
标题翻译：用于形成外延晶片的方法和用于制造半导体器件的方法
公开(公告)号：US08679955B2
公开(公告)日：2014-03-25
申请号：US13202419
申请日：2010-02-10
申请人： Shin Hashimoto , Katsushi Akita , Kensaku Motoki , Hideaki Nakahata , Shinsuke Fujiwara
发明人： Shin Hashimoto , Katsushi Akita , Kensaku Motoki , Hideaki Nakahata , Shinsuke Fujiwara
IPC分类号： H01L21/20
CPC分类号： H01L21/0262 , C30B25/02 , C30B29/16 , C30B29/403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L33/007
摘要： A method for forming an epitaxial wafer is provided as one enabling growth of a gallium nitride based semiconductor with good crystal quality on a gallium oxide region. In step S107, an AlN buffer layer 13 is grown. In step S108, at a time t5, a source gas G1 containing hydrogen, trimethylaluminum, and ammonia, in addition to nitrogen, is supplied into a growth reactor 10 to grow the AlN buffer layer 13 on a primary surface 11a. The AlN buffer layer 13 is so called a low-temperature buffer layer. After a start of film formation of the buffer layer 13, in step S109 supply of hydrogen (H2) is started at a time t6. At the time t6, H2, N2, TMA, and NH3 are supplied into the growth reactor 10. A supply amount of hydrogen is increased between times t6 and t7, and at the time t7 the increase of hydrogen is terminated to supply a constant amount of hydrogen. At the time t7, H2, TMA, and NH3 are supplied into the growth reactor 10.
摘要翻译：提供了一种用于形成外延晶片的方法，其可以在氧化镓区域上使得能够以良好的晶体质量生长氮化镓基半导体。在步骤S107中，生长AlN缓冲层13。在步骤S108中，在时刻t5，将除了氮以外的氢，三甲基铝和氨的原料气G1供给到生长反应器10中，以在主面11a上生长AlN缓冲层13。 AlN缓冲层13被称为低温缓冲层。在开始形成缓冲层13之后，在步骤S109中，在时刻t6开始供给氢（H2）。在时间t6，H2，N2，TMA和NH3被供应到生长反应器10中。在时间t6和t7之间，氢的供应量增加，而在时间t7，氢的增加被终止以提供恒定的量的氢。在时间t7，将H2，TMA和NH3供应到生长反应器10中。

43. 发明授权

US08540817B2 Method of manufacturing a Si(1-v-w-x)CwAlxNv substrate, method of manufacturing an epitaxial wafer, Si(1-v-w-x)CwAlxNv substrate, and epitaxial wafer 失效
标题翻译： Si（1-v-w-x）C w Al x N v衬底的制造方法，外延晶片的制造方法，Si（1-v-w-x）C w Al x N v衬底和外延晶片
公开(公告)号：US08540817B2
公开(公告)日：2013-09-24
申请号：US12989015
申请日：2009-04-17
申请人： Issei Satoh , Michimasa Miyanaga , Shinsuke Fujiwara , Hideaki Nakahata
发明人： Issei Satoh , Michimasa Miyanaga , Shinsuke Fujiwara , Hideaki Nakahata
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B23/00 , C23C14/0617 , C23C14/28 , C30B25/00 , C30B25/02 , C30B28/12 , C30B28/14 , C30B29/36 , C30B29/38 , C30B29/403 , H01L21/02381 , H01L21/02439 , H01L21/02447 , H01L21/02458 , H01L21/02488 , H01L21/02507 , H01L21/02513 , H01L21/0254 , H01L21/02617 , Y10T428/24471
摘要： There are provided a method for manufacturing a Si(1-v-w-x)CwAlxNv substrate having a reduced number of cracks and high processability, a method for manufacturing an epitaxial wafer, a Si(1-v-w-x)CwAlxNv substrate, and an epitaxial wafer.A method for manufacturing a Si(1-v-w-x)CwAlxNv substrate 10a includes the following steps. First, a Si substrate 11 is prepared. A Si(1-v-w-x)CwAlxNv layer (0
摘要翻译：提供了具有减少的裂纹数和加工性能降低的Si（1-v-w-x）C w Al x N v衬底的制造方法，外延晶片的制造方法，Si（1-v-w-x）C w Al x N v衬底和外延晶片。制造Si（1-v-w-x）C w Al x N v衬底10a的方法包括以下步骤。首先，准备Si基板11。然后在Si衬底上，在低于1℃的温度下生长Si（1-vwx）C w Al x N v层（0

44. 发明授权

US08501592B2 Freestanding III-nitride single-crystal substrate and method of manufacturing semiconductor device utilizing the substrate 有权
标题翻译：独立的III族氮化物单晶衬底以及利用衬底的半导体器件的制造方法
公开(公告)号：US08501592B2
公开(公告)日：2013-08-06
申请号：US13006429
申请日：2011-01-14
申请人： Shinsuke Fujiwara , Seiji Nakahata
发明人： Shinsuke Fujiwara , Seiji Nakahata
IPC分类号： H01L21/20
CPC分类号： C30B29/403 , C30B9/12 , C30B19/02 , C30B25/20
摘要： Freestanding III-nitride single-crystal substrates whose average dislocation density is not greater than 5×105 cm−2 and that are fracture resistant, and a method of manufacturing semiconductor devices utilizing such freestanding III-nitride single-crystal substrates are made available. The freestanding III-nitride single-crystal substrate includes one or more high-dislocation-density regions (20h), and a plurality of low-dislocation-density regions (20k) in which the dislocation density is lower than that of the high-dislocation-density regions (20h), wherein the average dislocation density is not greater than 5×105 cm−2. Herein, the ratio of the dislocation density of the high-dislocation-density region(s) (20h) to the average dislocation density is sufficiently large to check the propagation of cracks in the substrate. And the semiconductor device manufacturing method utilizes the freestanding III-nitride single crystal substrate (20p).
摘要翻译：可以获得平均位错密度不大于5×105cm-2并且是耐断裂性的独立的III族氮化物单晶衬底，以及利用这种独立式III族氮化物单晶衬底制造半导体器件的方法。独立的III族氮化物单晶衬底包括一个或多个高位错密度区域（20h）和位错密度低于高位错密度区域（20k）的多个低位错密度区域（20k）密度区域（20h），其中平均位错密度不大于5×105cm-2。这里，高位错密度区域（20h）的位错密度与平均位错密度的比例足够大，以检查基板中的裂纹的传播。并且半导体器件制造方法利用独立的III族氮化物单晶衬底（20p）。

45. 发明申请

US20120329245A1 Group III Nitride Crystal and Method for Producing the Same 有权
标题翻译： III族氮化物晶体及其制造方法
公开(公告)号：US20120329245A1
公开(公告)日：2012-12-27
申请号：US13338263
申请日：2011-12-28
申请人： Koji Uematsu , Hideki Osada , Seiji Nakahata , Shinsuke Fujiwara
发明人： Koji Uematsu , Hideki Osada , Seiji Nakahata , Shinsuke Fujiwara
IPC分类号： H01L21/78 , C01B21/06
CPC分类号： H01L29/045 , C01B21/0632 , C01P2002/90 , C01P2006/12 , C30B29/403 , C30B29/406 , C30B33/06 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02658 , H01L33/16 , H01L33/32
摘要： A method for producing a group III nitride crystal in the present invention includes the steps of cutting a plurality of group III nitride crystal substrates 10p and 10q having a main plane from a group III nitride bulk crystal 1, the main planes 10pm and 10qm having a plane orientation with an off-angle of five degrees or less with respect to a crystal-geometrically equivalent plane orientation selected from the group consisting of {20-21}, {20-2-1}, {22-41}, and {22-4-1}, transversely arranging the substrates 10p and 10q adjacent to each other such that the main planes 10pm and 10qm of the substrates 10p and 10q are parallel to each other and each [0001] direction of the substrates 10p and 10q coincides with each other, and growing a group III nitride crystal 20 on the main planes 10pm and 10qm of the substrates 10p and 10q.
摘要翻译：本发明的III族氮化物晶体的制造方法包括从III族氮化物本体晶体1切割出具有主面的多个III族氮化物晶体基板10p，10q，主平面10pm，10qm具有平面取向相对于从{20-21}，{20-2-1}，{22-41}和{22-41}组成的组中的晶体 - 几何等效平面取向具有5度或更小的偏离角度， 22-4-1}，使基板10p和10q彼此相邻地布置，使得基板10p和10q的主平面10pm和10qm彼此平行，并且基板10p和10q的每个[0001]方向与并且在基板10p和10q的主平面10pm和10qm上生长III族氮化物晶体20。

46. 发明申请

US20120070929A1 METHOD FOR FABRICATING WAFER PRODUCT AND METHOD FOR FABRICATING GALLIUM NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE 有权
标题翻译：用于制造波形产品的方法和用于制造基于氮化镓的半导体光学器件的方法
公开(公告)号：US20120070929A1
公开(公告)日：2012-03-22
申请号：US13318039
申请日：2010-03-01
申请人： Shin Hashimoto , Katsushi Akita , Kensaku Motoki , Shinsuke Fujiwara , Hideaki Nakahata
发明人： Shin Hashimoto , Katsushi Akita , Kensaku Motoki , Shinsuke Fujiwara , Hideaki Nakahata
IPC分类号： H01L33/36 , H01L21/20
CPC分类号： C23C16/0227 , C23C16/0272 , C23C16/303 , C30B25/183 , C30B29/406 , H01L33/007
摘要： Provided is a method for fabricating a wafer product including an active layer grown on a gallium oxide substrate and allowing an improvement in emission intensity. In step S105, a buffer layer 13 comprised of a Group III nitride such as GaN, AlGaN, or AlN is grown at 600 Celsius degrees on a primary surface 11a of a gallium oxide substrate 11. After the growth of the buffer layer 13, while supplying a gas G2, which contains hydrogen and nitrogen, into a growth reactor 10, the gallium oxide substrate 11 and the buffer layer 13 are exposed to an atmosphere in the growth reactor 11 at 1050 Celsius degrees. A Group III nitride semiconductor layer 15 is grown on the modified buffer layer. The modified buffer layer includes, for example, voids. The Group III nitride semiconductor layer 15 can be comprised of GaN and AlGaN. When the Group III nitride semiconductor layer 15 is formed of these materials, excellent crystal quality is obtained on the modified buffer layer 14.
摘要翻译：本发明提供一种制造晶片产品的方法，该晶片产品包括在氧化镓衬底上生长的有源层并且能够提高发光强度。在步骤S105中，在氧化镓衬底11的主表面11a上以600摄氏度生长由诸如GaN，AlGaN或AlN的III族氮化物构成的缓冲层13.在缓冲层13生长之后，同时将含有氢和氮的气体G2供给到生长反应器10中，将氧化镓衬底11和缓冲层13在生长反应器11中的气氛中以1050摄氏度暴露。在改性缓冲层上生长III族氮化物半导体层15。改性缓冲层包括例如空隙。 III族氮化物半导体层15可以由GaN和AlGaN构成。当由这些材料形成III族氮化物半导体层15时，在改性缓冲层14上获得优异的晶体质量。

47. 发明授权

US07998836B1 Method for fabricating gallium nitride based semiconductor electronic device 有权
标题翻译：制造氮化镓基半导体电子器件的方法
公开(公告)号：US07998836B1
公开(公告)日：2011-08-16
申请号：US12912932
申请日：2010-10-27
申请人： Hiromu Shiomi , Shinsuke Fujiwara , Yu Saitoh , Makoto Kiyama
发明人： Hiromu Shiomi , Shinsuke Fujiwara , Yu Saitoh , Makoto Kiyama
IPC分类号： H01L21/30
CPC分类号： H01L29/66219 , H01L29/2003 , H01L29/66204 , H01L29/861 , H01L29/872
摘要： A method of fabricating a gallium nitride-based semiconductor electronic device is provided, the method preventing a reduction in adhesiveness between a gallium nitride-based semiconductor layer and a conductive substrate. A substrate 11 is prepared. The substrate 11 has a first surface 11a and a second surface 11b, the first surface 11a allowing a gallium nitride-based semiconductor to be deposited thereon. The substrate 11 includes a support 13 of a material different from the gallium nitride-based semiconductor. The support is exposed on the second surface 11b of the substrate 11. An array of grooves 15 is provided in the second surface 11b. A semiconductor region including at least one gallium nitride-based semiconductor layer is deposited on the first surface 11a of the substrate 11, and thereby an epitaxial substrate E is fabricated. A conductive substrate 33 is bonded to the epitaxial substrate E such that the semiconductor region 17 is provided between the first surface 11a of the substrate 11 and the conductive substrate E. Subsequently, the second surface 11b is irradiated with laser light for laser lift-off.
摘要翻译：提供了一种制造氮化镓基半导体电子器件的方法，该方法防止了氮化镓基半导体层与导电基片之间的粘附性的降低。制备基板11。基板11具有第一表面11a和第二表面11b，第一表面11a允许沉积氮化镓基半导体。基板11包括与氮化镓基半导体不同的材料的支撑体13。支撑体暴露在基板11的第二表面11b上。在第二表面11b中设置有一组槽15。包括至少一个氮化镓基半导体层的半导体区域沉积在衬底11的第一表面11a上，由此制造外延衬底E。将导电基板33接合到外延基板E，使得半导体区域17设置在基板11的第一表面11a和导电基板E之间。接着，用激光照射激光剥离第二表面11b 。

48. 发明授权

US07943964B2 AlxGayIn1−x−yN crystal substrate, semiconductor device, and method of manufacturing the same 有权
标题翻译： AlxGayIn1-x-yN晶体基板，半导体器件及其制造方法
公开(公告)号：US07943964B2
公开(公告)日：2011-05-17
申请号：US12096986
申请日：2006-10-16
申请人： Shinsuke Fujiwara , Tomoki Uemura , Takuji Okahisa , Koji Uematsu , Manabu Okui , Muneyuki Nishioka , Shin Hashimoto
发明人： Shinsuke Fujiwara , Tomoki Uemura , Takuji Okahisa , Koji Uematsu , Manabu Okui , Muneyuki Nishioka , Shin Hashimoto
IPC分类号： H01L33/30
CPC分类号： H01L21/02658 , C30B25/02 , C30B29/403 , H01L21/02389 , H01L21/0254
摘要： An AlxGayIn1-x-yN crystal substrate of the present invention has a main plane having an area of at least 10 cm2. The main plane has an outer region located within 5 mm from an outer periphery of the main plane, and an inner region corresponding to a region other than the outer region. The inner region has a total dislocation density of at least 1×102 cm−2 and at most 1×106 cm−2. It is thereby possible to provide an AlxGayIn1-x-yN crystal substrate having a large size and a suitable dislocation density for serving as a substrate for a semiconductor device, a semiconductor device including the AlxGayIn1-x-yN crystal substrate, and a method of manufacturing the same.
摘要翻译：本发明的Al x Ga y In 1-x-y N晶体基板具有面积为至少10cm 2的主平面。主平面具有位于与主平面的外周5mm以内的外部区域和与外部区域以外的区域对应的内部区域。内部区域的总位错密度为1×102cm 2以上且1×10 6 cm -2以下。由此，可以提供具有大尺寸和合适的位错密度的Al x Ga y In 1-x-y N晶体基板，用作半导体器件的基板，包括Al x Ga y In 1-x-y N晶体基板的半导体器件，以及制造相同。

49. 发明申请

US20110042788A1 PROCESS FOR PRODUCING Si(1-v-w-x)CwAlxNv BASE MATERIAL, PROCESS FOR PRODUCING EPITAXIAL WAFER, SI(1-v-w-x)CwAlxNv BASE MATERIAL, AND EPITAXIAL WAFER 有权
标题翻译：用于生产Si（1-v-w-x）CwAlxNv基材的方法，用于生产外延晶体的方法，SI（1-v-w-x）C w Al x N v基材和外延晶体
公开(公告)号：US20110042788A1
公开(公告)日：2011-02-24
申请号：US12989039
申请日：2009-04-17
申请人： Issei Satoh , Michimasa Miyanaga , Shinsuke Fujiwara , Hideaki Nakahata
发明人： Issei Satoh , Michimasa Miyanaga , Shinsuke Fujiwara , Hideaki Nakahata
IPC分类号： H01L29/24 , H01L21/36 , H01L29/20
CPC分类号： H01L29/267 , C23C14/0617 , C23C14/28 , C30B23/02 , C30B29/36 , C30B29/38 , C30B29/403 , H01L21/02381 , H01L21/02447 , H01L21/02458 , H01L21/02529 , H01L21/0254 , H01L21/0262 , H01L21/02631
摘要： Si(1-v-w-x)CwAlxNv crystals in a mixed crystal state are formed. A method for manufacturing an easily processable Si(1-v-w-x)CwAlxNv substrate, a method for manufacturing an epitaxial wafer, a Si(1-v-w-x)CwAlxNv substrate, and an epitaxial wafer are provided.A method for manufacturing a Si(1-v-w-x)CwAlxNv substrate 10a includes the following steps. First, a Si substrate 11 is prepared. A Si(1-v-w-x)CwAlxNv layer 12 (0
摘要翻译：形成混晶的Si（1-v-w-x）C w Al x N v晶体。提供了一种用于制造易加工的Si（1-v-w-x）C w Al x N v衬底的方法，制造外延晶片的方法，Si（1-v-w-x）C w Al x N v衬底和外延晶片。制造Si（1-v-w-x）C w Al x N v衬底10a的方法包括以下步骤。首先，准备Si基板11。然后在Si衬底11上生长Si（1-vwx）C w Al x N v层12（0

50. 发明申请

US20100139553A1 Method of Growing III-Nitride Crystal 有权
标题翻译：生长III型氮化物晶体的方法
公开(公告)号：US20100139553A1
公开(公告)日：2010-06-10
申请号：US12630836
申请日：2009-12-03
申请人： Hiroaki Yoshida , Shinsuke Fujiwara , Koji Uematsu , Masanori Morishita
发明人： Hiroaki Yoshida , Shinsuke Fujiwara , Koji Uematsu , Masanori Morishita
IPC分类号： C30B25/02
CPC分类号： C30B25/20 , C30B29/406
摘要： Affords a method of growing, across the entirety of a major surface of a first III-nitride crystal, a second III-nitride crystal by HVPE, in an ambient temperature higher than 1100° C. The present III-nitride crystal growth method comprises: a step of preparing a first III-nitride crystal (10) having an alkali-metal atom concentration of less than 1.0×1018 cm−3; and a step of growing a second III-nitride crystal (20) onto a major surface (10m) of the first III-nitride crystal (10) by HVPE, in an ambient temperature higher than 1100° C.
摘要翻译：提供了在高于1100℃的环境温度下，通过HVPE在第一III族氮化物晶体的整个主表面上生长第二III族氮化物晶体的方法。本III-氮化物晶体生长方法包括：制备碱金属原子浓度小于1.0×1018cm-3的第一III族氮化物晶体（10）的步骤; 以及在高于1100℃的环境温度下通过HVPE在第一III族氮化物晶体（10）的主表面（10m）上生长第二III族氮化物晶体（20）的步骤。

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