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1. 发明授权

US08969920B2 Vertical GaN-based semiconductor device 有权
标题翻译：垂直GaN基半导体器件
公开(公告)号：US08969920B2
公开(公告)日：2015-03-03
申请号：US13824248
申请日：2011-07-06
申请人： Makoto Kiyama , Yu Saitoh , Masaya Okada , Masaki Ueno , Seiji Yaegashi , Kazutaka Inoue , Mitsunori Yokoyama
发明人： Makoto Kiyama , Yu Saitoh , Masaya Okada , Masaki Ueno , Seiji Yaegashi , Kazutaka Inoue , Mitsunori Yokoyama
IPC分类号： H01L29/66 , H01L29/778 , H01L29/20 , H01L29/423
CPC分类号： H01L29/778 , H01L29/2003 , H01L29/4236 , H01L29/66431 , H01L29/66462 , H01L29/7788 , H01L29/7789
摘要： A vertical semiconductor device in which pinch-off characteristics and breakdown voltage characteristics can be stably improved by fixing the electric potential of a p-type GaN barrier layer with certainty is provided. The semiconductor device includes a GaN-based stacked layer having an opening, a regrown layer including a channel located so as to cover a wall surface of the opening, an n+-type source layer that is in ohmic contact with the source electrode, a p-type GaN barrier layer, and a p+-type GaN-based supplementary layer located between the p-type GaN barrier layer and the n+-type source layer. The p+-type GaN-based supplementary layer and the n+-type source layer form a tunnel junction to fix the electric potential of the p-type GaN barrier layer at a source potential.
摘要翻译：提供了通过确定地固定p型GaN势垒层的电位可以稳定地提高夹断特性和击穿电压特性的垂直半导体器件。半导体器件包括具有开口的GaN基层叠层，包含覆盖开口壁面的沟道的再生长层，与源电极欧姆接触的n +型源极，p 位于p型GaN势垒层和n +型源极层之间的p +型GaN基辅助层。 p +型GaN基辅助层和n +型源极层形成隧道结，以将p型GaN阻挡层的电位固定在源极电位。

2. 发明授权

US08941174B2 Semiconductor device and method for producing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08941174B2
公开(公告)日：2015-01-27
申请号：US13885131
申请日：2011-10-17
申请人： Masaya Okada , Makoto Kiyama , Yu Saitoh , Seiji Yaegashi , Mitsunori Yokoyama , Kazutaka Inoue
发明人： Masaya Okada , Makoto Kiyama , Yu Saitoh , Seiji Yaegashi , Mitsunori Yokoyama , Kazutaka Inoue
IPC分类号： H01L29/66 , H01L29/78 , H01L29/778 , H01L29/20 , H01L29/417 , H01L29/423
CPC分类号： H01L29/7813 , H01L29/2003 , H01L29/41766 , H01L29/42368 , H01L29/66462 , H01L29/66734 , H01L29/7788 , H01L29/7789 , H01L29/78
摘要： It is an object to improve the breakdown voltage characteristics of a vertical semiconductor device having an opening and including a channel formed of two-dimensional electron gas in the opening. A GaN-based stacked layer 15 includes n−-type GaN drift layer 4/p-type GaN barrier layer 6/n+-type GaN contact layer 7. An opening 28 extends from a top layer and reaches the n−-type GaN drift layer 4. The semiconductor device includes a regrown layer 27 located so as to cover a wall surface and a bottom portion of the opening, the regrown layer 27 including an electron drift layer 22 and an electron source layer 26, a source electrode S located around the opening, a gate electrode G located on the regrown layer in the opening, and a bottom insulating layer 37 located in the bottom portion of the opening.
摘要翻译：本发明的目的是提高具有开口的垂直半导体器件的击穿电压特性，并且在开口中包括由二维电子气形成的沟道。 GaN基叠层15包括n型GaN漂移层4 / p型GaN势垒层6 / n +型GaN接触层7.开口28从顶层延伸并到达n型GaN漂移该半导体器件包括重新生长层27，其被覆盖以覆盖开口的壁表面和底部，再生长层27包括电子漂移层22和电子源层26，源电极S位于开口，位于开口中的再生长层上的栅极电极G和位于开口底部的底部绝缘层37。

3. 发明授权

US08896058B2 Semiconductor device and method for producing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08896058B2
公开(公告)日：2014-11-25
申请号：US13884229
申请日：2011-10-05
申请人： Masaya Okada , Makoto Kiyama , Yu Saitoh , Seiji Yaegashi , Mitsunori Yokoyama , Kazutaka Inoue
发明人： Masaya Okada , Makoto Kiyama , Yu Saitoh , Seiji Yaegashi , Mitsunori Yokoyama , Kazutaka Inoue
IPC分类号： H01L29/66 , H01L29/778 , H01L29/78 , H01L29/423 , H01L29/40 , H01L29/417 , H01L29/20
CPC分类号： H01L29/7827 , H01L29/2003 , H01L29/407 , H01L29/41766 , H01L29/4236 , H01L29/66462 , H01L29/66666 , H01L29/7788 , H01L29/7789
摘要： It is an object to improve the breakdown voltage characteristics of a vertical semiconductor device having an opening and including a channel formed of two-dimensional electron gas in the opening. The vertical semiconductor device includes a GaN-based stacked layer 15 having an opening 28 and the GaN-based stacked layer 15 includes n-type GaN-based drift layer 4/p-type GaN-based barrier layer 6/n-type GaN-based contact layer 7. The vertical semiconductor device includes a regrown layer 27 located so as to cover the opening, the regrown layer 27 including an electron drift layer 22 and an electron supply layer 26, a source electrode S, and a gate electrode G located on the regrown layer. The gate electrode G covers a portion having a length corresponding to the thickness of the p-type GaN-based barrier layer and is terminated at a position on the wall surface, the position being away from the bottom portion of the opening.
摘要翻译：本发明的目的是提高具有开口的垂直半导体器件的击穿电压特性，并且在开口中包括由二维电子气形成的沟道。垂直半导体器件包括具有开口28的GaN基叠层15，GaN基叠层15包括n型GaN基漂移层4 / p型GaN基阻挡层6 / n型GaN- 垂直半导体器件包括覆盖开口的再生长层27，包含电子漂移层22和电子供给层26的再生长层27，源电极S和位于在再生长层上。栅电极G覆盖长度对应于p型GaN基阻挡层的厚度的部分，并且终止在壁表面上的位置，该位置远离开口的底部。

4. 发明授权

US08884306B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08884306B2
公开(公告)日：2014-11-11
申请号：US13353707
申请日：2012-01-19
申请人： Takashi Kyono , Kuniaki Ishihara , Akihiro Hachigo , Takahisa Yoshida , Masaki Ueno , Makoto Kiyama
发明人： Takashi Kyono , Kuniaki Ishihara , Akihiro Hachigo , Takahisa Yoshida , Masaki Ueno , Makoto Kiyama
IPC分类号： H01L29/15 , H01L31/0256 , H01L33/00 , H01L33/02
CPC分类号： H01L33/007 , H01L33/0079 , H01L33/025
摘要： A semiconductor device includes a supporting substrate, a conductive layer placed on the supporting substrate, and at least one group III nitride semiconductor layer placed on the conductive layer. Of the group III nitride semiconductor layers, a conductive-layer-neighboring group III nitride semiconductor layer has n type conductivity, dislocation density of at most 1×107 cm−2, and oxygen concentration of at most 5×1018 cm−3. Thus, an n-down type device having a semiconductor layer of high crystallinity can be provided.
摘要翻译：半导体器件包括支撑衬底，放置在支撑衬底上的导电层和放置在导电层上的至少一个III族氮化物半导体层。在III族氮化物半导体层中，导电层相邻的III族氮化物半导体层具有n型导电性，位错密度至多为1×107cm-2，氧浓度为至多5×1018cm-3。因此，可以提供具有高结晶度的半导体层的n型型器件。

5. 发明申请

US20140203329A1 NITRIDE ELECTRONIC DEVICE AND METHOD FOR FABRICATING NITRIDE ELECTRONIC DEVICE 审中-公开
标题翻译：氮化物电子器件及其制造方法
公开(公告)号：US20140203329A1
公开(公告)日：2014-07-24
申请号：US14123738
申请日：2011-06-03
申请人： Yu Saitoh , Masaya Okada , Yusuke Yoshizumi , Makoto Kiyama , Masaki Ueno , Koji Katayama , Takao Nakamura
发明人： Yu Saitoh , Masaya Okada , Yusuke Yoshizumi , Makoto Kiyama , Masaki Ueno , Koji Katayama , Takao Nakamura
IPC分类号： H01L29/66 , H01L29/778
CPC分类号： H01L29/66462 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/0254 , H01L21/0262 , H01L21/30621 , H01L21/3085 , H01L21/3086 , H01L29/045 , H01L29/2003 , H01L29/41766 , H01L29/7788 , H01L29/7789
摘要： Provided is a nitride electronic device having a structure that allows the reduction of leakage by preventing the carrier concentration from increasing in a channel layer. An inclined surface and a primary surface of a semiconductor stack extend along first and second reference planes R1, R2, respectively. The primary surface of the stack is inclined at an angle ranging from 5 to 40 degrees with respect to a reference axis indicating a c-axis direction of hexagonal group III nitride. An axis normal to the plane R1 and the axis form an angle smaller than the angle an axis normal to the plane R2 and the axis form. The oxygen concentration of the channel layer is lower than 1×1017 cm−3. It becomes possible to avoid increase in carrier concentration of the channel layer caused by the oxygen addition, thereby reducing leakage current via the channel layer in the transistor.
摘要翻译：本发明提供一种氮化物电子器件，其具有通过防止载流子浓度在沟道层中增加而允许减少泄漏的结构。半导体堆叠的倾斜表面和主表面分别沿着第一和第二参考平面R1，R2延伸。堆叠的主表面相对于表示六方晶III族氮化物的c轴方向的参考轴线以5至40度的角度倾斜。与平面R1和轴垂直的轴线形成比垂直于平面R2的轴线和轴线的角度小的角度。通道层的氧浓度低于1×1017cm-3。可以避免由氧添加引起的沟道层的载流子浓度增加，从而减小晶体管中的沟道层的漏电流。

6. 发明申请

US20120205661A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120205661A1
公开(公告)日：2012-08-16
申请号：US13353707
申请日：2012-01-19
申请人： Takashi KYONO , Kuniaki Ishihara , Akihiro Hachigo , Takahisa Yoshida , Masaki Ueno , Makoto Kiyama
发明人： Takashi KYONO , Kuniaki Ishihara , Akihiro Hachigo , Takahisa Yoshida , Masaki Ueno , Makoto Kiyama
IPC分类号： H01L29/20 , H01L21/762
CPC分类号： H01L33/007 , H01L33/0079 , H01L33/025
摘要： A semiconductor device includes a supporting substrate, a conductive layer placed on the supporting substrate, and at least one group III nitride semiconductor layer placed on the conductive layer. Of the group III nitride semiconductor layers, a conductive-layer-neighboring group III nitride semiconductor layer has n type conductivity, dislocation density of at most 1×107 cm−2, and oxygen concentration of at most 5×1018 cm−3. Thus, an n-down type device having a semiconductor layer of high crystallinity can be provided.
摘要翻译：半导体器件包括支撑衬底，放置在支撑衬底上的导电层和放置在导电层上的至少一个III族氮化物半导体层。在III族氮化物半导体层中，导电层相邻的III族氮化物半导体层具有n型导电性，位错密度至多为1×107cm-2，氧浓度为至多5×1018cm-3。因此，可以提供具有高结晶度的半导体层的n型型器件。

7. 发明申请

US20120181548A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120181548A1
公开(公告)日：2012-07-19
申请号：US13498767
申请日：2010-06-24
申请人： Masaya Okada , Makoto Kiyama
发明人： Masaya Okada , Makoto Kiyama
IPC分类号： H01L29/778 , H01L21/20
CPC分类号： H01L29/7786 , H01L29/0891 , H01L29/2003 , H01L29/66462 , H01L29/7788 , H01L29/7789
摘要： There are provided a high current semiconductor device that has low on-resistance, high mobility, and good pinch-off characteristics and in which a kink phenomenon is not easily caused even if a drain voltage is increased, and a method for producing the semiconductor device. The semiconductor device of the present invention includes a GaN-based layered body 15 having an opening 28, a regrown layer 27 including a channel, a gate electrode G, a source electrode S, and a drain electrode D. The regrown layer 27 includes an electron transit layer 22 and an electron supply layer 26. The GaN-based layered body includes a p-type GaN layer 6 whose end surface is covered by the regrown layer in the opening, and a p-side electrode 11 that is in ohmic contact with the p-type GaN layer is disposed.
摘要翻译：提供了具有低导通电阻，高迁移率和良好的夹断特性的高电流半导体器件，并且即使漏极电压增加也不容易引起扭结现象，并且制造半导体器件的方法。本发明的半导体器件包括具有开口28的GaN基层叠体15，包括沟道的再生长层27，栅电极G，源电极S和漏电极D.再生层27包括：电子转移层22和电子供给层26.该GaN基层叠体包括端面被开口部中的再生长层覆盖的p型GaN层6和与欧姆接触的p侧电极11 配置p型GaN层。

8. 发明申请

US20120037918A1 SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120037918A1
公开(公告)日：2012-02-16
申请号：US13266420
申请日：2009-12-25
申请人： Tomihito Miyazaki , Makoto Kiyama , Taku Horii
发明人： Tomihito Miyazaki , Makoto Kiyama , Taku Horii
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L21/20 , H01L21/28575 , H01L21/28581 , H01L24/05 , H01L24/45 , H01L24/48 , H01L29/2003 , H01L29/41766 , H01L29/452 , H01L29/475 , H01L29/4958 , H01L29/7813 , H01L29/872 , H01L2224/04042 , H01L2224/05018 , H01L2224/05026 , H01L2224/05558 , H01L2224/05571 , H01L2224/05624 , H01L2224/45015 , H01L2224/45124 , H01L2224/48724 , H01L2924/00014 , H01L2924/0002 , H01L2924/01006 , H01L2924/01013 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01033 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/04941 , H01L2924/12032 , H01L2924/12042 , H01L2924/1305 , H01L2924/1306 , H01L2924/13064 , H01L2924/13091 , H01L2924/00 , H01L2224/05552 , H01L2924/2076
摘要： A semiconductor device includes a semiconductor layer (1) containing GaN and an electrode. The electrode includes an electrode main body (6), a connection-use electrode (8) containing Al and formed at a position farther from the semiconductor layer (1) than the electrode main body (6), and a barrier layer (7) formed between the electrode main body (6) and the connection-use electrode (8), the barrier layer (7) containing at least one selected from the group consisting of W, TiW, WN, TiN, Ta, and TaN. A surface roughness RMS of the barrier layer (7) is 3.0 nm or less.
摘要翻译：半导体器件包括含有GaN和电极的半导体层（1）。所述电极包括电极主体（6），包含Al并形成在比所述电极主体（6）更远离所述半导体层（1）的位置处的连接用电极（8）和阻挡层（7）形成在电极主体（6）和连接用电极（8）之间，阻挡层（7）含有选自W，TiW，WN，TiN，Ta和TaN中的至少一种。阻挡层（7）的表面粗糙度RMS为3.0nm以下。

9. 发明申请

US20110198693A1 III NITRIDE SEMICONDUCTOR ELECTRONIC DEVICE, METHOD FOR MANUFACTURING III NITRIDE SEMICONDUCTOR ELECTRONIC DEVICE, AND III NITRIDE SEMICONDUCTOR EPITAXIAL WAFER 失效
标题翻译： III型氮化物半导体电子器件，制造III型氮化物半导体电子器件的方法和III型氮化物半导体外延晶体管
公开(公告)号：US20110198693A1
公开(公告)日：2011-08-18
申请号：US13124934
申请日：2009-10-20
申请人： Hiromu Shiomi , Kazuhide Sumiyoshu , Yu Saitoh , Makoto Kiyama
发明人： Hiromu Shiomi , Kazuhide Sumiyoshu , Yu Saitoh , Makoto Kiyama
IPC分类号： H01L29/78 , H01L29/06 , H01L21/205
CPC分类号： H01L29/7802 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/0254 , H01L29/045 , H01L29/2003 , H01L29/32 , H01L29/41741 , H01L29/4238 , H01L29/475 , H01L29/66712 , H01L29/861 , H01L29/872
摘要： Provided is a III nitride semiconductor electronic device having a structure capable of reducing leakage current. A laminate 11 includes a substrate 13 and a III nitride semiconductor epitaxial film 15. The substrate 13 is made of a III nitride semiconductor having a carrier concentration of more than 1×1018 cm−3. The epitaxial structure 15 includes a III nitride semiconductor epitaxial film 17. A first face 13a of the substrate 13 is inclined at an angle θ of more than 5 degrees with respect to an axis Cx extending in a direction of the c-axis. A normal vector VN and a c-axis vector VC make the angle θ. The III nitride semiconductor epitaxial film 17 includes first, second and third regions 17a, 17b and 17c arranged in order in a direction of a normal to the first face 13a. A dislocation density of the third region 17c is smaller than that of the first region 17a. A dislocation density of the second region 17b is smaller than that of the substrate 13.
摘要翻译：提供具有能够减少漏电流的结构的III族氮化物半导体电子器件。层压体11包括基板13和III族氮化物半导体外延膜15.基板13由载流子浓度大于1×1018cm-3的III族氮化物半导体构成。外延结构15包括III族氮化物半导体外延膜17.衬底13的第一面13a以角度倾斜; 相对于沿c轴方向延伸的轴线Cx大于5度。法向量VN和c轴向量VC使得角度和角度。 III族氮化物半导体外延膜17包括沿着与第一面13a的法线方向依次排列的第一，第二和第三区域17a，17b和17c。第三区域17c的位错密度小于第一区域17a的位错密度。第二区域17b的位错密度小于基板13的位错密度。

10. 发明申请

US20080315209A1 Group III Nitride Semiconductor Device and Epitaxial Substrate 有权
标题翻译：第III族氮化物半导体器件和外延衬底
公开(公告)号：US20080315209A1
公开(公告)日：2008-12-25
申请号：US11571990
申请日：2006-01-20
申请人： Kouhei Miura , Makoto Kiyama , Takashi Sakurada
发明人： Kouhei Miura , Makoto Kiyama , Takashi Sakurada
IPC分类号： H01L29/20
CPC分类号： H01L29/872 , H01L29/045 , H01L29/2003 , H01L29/475
摘要： Affords a Group III nitride semiconductor device having a structure that can improve the breakdown voltage. A Schottky diode (11) consists of a Group III nitride support substrate (13), a gallium nitride region (15), and a Schottky electrode (17). The Group III nitride support substrate (13) has electrical conductivity. The Schottky electrode (17) forms a Schottky junction on the gallium nitride region (15). The gallium nitride region (15) is fabricated on a principal face (13a) of the Group III nitride support substrate (13). The gallium nitride region (15) has a (10 12)-plane XRD full-width-at-half-maximum of 100 sec or less.
摘要翻译：提供具有能够提高击穿电压的结构的III族氮化物半导体器件。肖特基二极管（11）由III族氮化物支撑衬底（13），氮化镓区域（15）和肖特基电极（17）组成。 III族氮化物支撑衬底（13）具有导电性。肖特基电极（17）在氮化镓区域（15）上形成肖特基结。氮化镓区域（15）制造在III族氮化物支撑衬底（13）的主面（13a）上。氮化镓区域（15）具有100秒或更短的（10°=“12”）平面XRD全宽度半最大值。

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