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1. 发明授权

US08501592B2 Freestanding III-nitride single-crystal substrate and method of manufacturing semiconductor device utilizing the substrate 有权
标题翻译：独立的III族氮化物单晶衬底以及利用衬底的半导体器件的制造方法
公开(公告)号：US08501592B2
公开(公告)日：2013-08-06
申请号：US13006429
申请日：2011-01-14
申请人： Shinsuke Fujiwara , Seiji Nakahata
发明人： Shinsuke Fujiwara , Seiji Nakahata
IPC分类号： H01L21/20
CPC分类号： C30B29/403 , C30B9/12 , C30B19/02 , C30B25/20
摘要： Freestanding III-nitride single-crystal substrates whose average dislocation density is not greater than 5×105 cm−2 and that are fracture resistant, and a method of manufacturing semiconductor devices utilizing such freestanding III-nitride single-crystal substrates are made available. The freestanding III-nitride single-crystal substrate includes one or more high-dislocation-density regions (20h), and a plurality of low-dislocation-density regions (20k) in which the dislocation density is lower than that of the high-dislocation-density regions (20h), wherein the average dislocation density is not greater than 5×105 cm−2. Herein, the ratio of the dislocation density of the high-dislocation-density region(s) (20h) to the average dislocation density is sufficiently large to check the propagation of cracks in the substrate. And the semiconductor device manufacturing method utilizes the freestanding III-nitride single crystal substrate (20p).
摘要翻译：可以获得平均位错密度不大于5×105cm-2并且是耐断裂性的独立的III族氮化物单晶衬底，以及利用这种独立式III族氮化物单晶衬底制造半导体器件的方法。独立的III族氮化物单晶衬底包括一个或多个高位错密度区域（20h）和位错密度低于高位错密度区域（20k）的多个低位错密度区域（20k）密度区域（20h），其中平均位错密度不大于5×105cm-2。这里，高位错密度区域（20h）的位错密度与平均位错密度的比例足够大，以检查基板中的裂纹的传播。并且半导体器件制造方法利用独立的III族氮化物单晶衬底（20p）。

2. 发明申请

US20120329245A1 Group III Nitride Crystal and Method for Producing the Same 有权
标题翻译： III族氮化物晶体及其制造方法
公开(公告)号：US20120329245A1
公开(公告)日：2012-12-27
申请号：US13338263
申请日：2011-12-28
申请人： Koji Uematsu , Hideki Osada , Seiji Nakahata , Shinsuke Fujiwara
发明人： Koji Uematsu , Hideki Osada , Seiji Nakahata , Shinsuke Fujiwara
IPC分类号： H01L21/78 , C01B21/06
CPC分类号： H01L29/045 , C01B21/0632 , C01P2002/90 , C01P2006/12 , C30B29/403 , C30B29/406 , C30B33/06 , H01L21/02389 , H01L21/0243 , H01L21/02433 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02658 , H01L33/16 , H01L33/32
摘要： A method for producing a group III nitride crystal in the present invention includes the steps of cutting a plurality of group III nitride crystal substrates 10p and 10q having a main plane from a group III nitride bulk crystal 1, the main planes 10pm and 10qm having a plane orientation with an off-angle of five degrees or less with respect to a crystal-geometrically equivalent plane orientation selected from the group consisting of {20-21}, {20-2-1}, {22-41}, and {22-4-1}, transversely arranging the substrates 10p and 10q adjacent to each other such that the main planes 10pm and 10qm of the substrates 10p and 10q are parallel to each other and each [0001] direction of the substrates 10p and 10q coincides with each other, and growing a group III nitride crystal 20 on the main planes 10pm and 10qm of the substrates 10p and 10q.
摘要翻译：本发明的III族氮化物晶体的制造方法包括从III族氮化物本体晶体1切割出具有主面的多个III族氮化物晶体基板10p，10q，主平面10pm，10qm具有平面取向相对于从{20-21}，{20-2-1}，{22-41}和{22-41}组成的组中的晶体 - 几何等效平面取向具有5度或更小的偏离角度， 22-4-1}，使基板10p和10q彼此相邻地布置，使得基板10p和10q的主平面10pm和10qm彼此平行，并且基板10p和10q的每个[0001]方向与并且在基板10p和10q的主平面10pm和10qm上生长III族氮化物晶体20。

3. 发明申请

US20090267190A1 Freestanding III-Nitride Single-Crystal Substrate and Method of Manufacturing Semiconductor Device Utilizing the Substrate 审中-公开
标题翻译：独立的III型氮化物单晶基板和利用该基板制造半导体器件的方法
公开(公告)号：US20090267190A1
公开(公告)日：2009-10-29
申请号：US12426963
申请日：2009-04-21
申请人： Shinsuke Fujiwara , Seiji Nakahata
发明人： Shinsuke Fujiwara , Seiji Nakahata
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： C30B29/403 , C30B9/12 , C30B19/02 , C30B25/20
摘要： Freestanding III-nitride single-crystal substrates whose average dislocation density is not greater than 5×105 cm−2 and that are fracture resistant, and a method of manufacturing semiconductor devices utilizing such freestanding III-nitride single-crystal substrates are made available. The freestanding III-nitride single-crystal substrate includes one or more high-dislocation-density regions (20h), and a plurality of low-dislocation-density regions (20k) in which the dislocation density is lower than that of the high-dislocation-density regions (20h), wherein the average dislocation density is not greater than 5×105 cm−2. Herein, the ratio of the dislocation density of the high-dislocation-density region(s) (20h) to the average dislocation density is sufficiently large to check the propagation of cracks in the substrate. And the semiconductor device manufacturing method utilizes the freestanding III-nitride single crystal substrate (20p).
摘要翻译：平均位错密度不大于5×10 5 cm -2且耐断裂的独立III族氮化物单晶衬底，以及利用这种独立式III族氮化物单晶衬底制造半导体器件的方法是可用的。独立的III族氮化物单晶衬底包括一个或多个高位错密度区域（20h）和位错密度低于高位错密度区域（20k）的多个低位错密度区域（20k）密度区域（20h），其中平均位错密度不大于5×10 5 cm -2。这里，高位错密度区域（20h）的位错密度与平均位错密度的比例足够大，以检查基板中的裂纹的传播。并且半导体器件制造方法利用独立的III族氮化物单晶衬底（20p）。

4. 发明申请

US20120070962A1 Freestanding III-Nitride Single-Crystal Substrate and Method of Manufacturing Semiconductor Device Utilizing the Substrate 有权
标题翻译：独立的III型氮化物单晶基板和利用该基板制造半导体器件的方法
公开(公告)号：US20120070962A1
公开(公告)日：2012-03-22
申请号：US13006429
申请日：2011-01-14
申请人： Shinsuke Fujiwara , Seiji Nakahata
发明人： Shinsuke Fujiwara , Seiji Nakahata
IPC分类号： H01L21/30 , B24B1/00 , C30B25/02 , C30B19/02 , C30B19/12
CPC分类号： C30B29/403 , C30B9/12 , C30B19/02 , C30B25/20
摘要： Freestanding III-nitride single-crystal substrates whose average dislocation density is not greater than 5×105 cm−2 and that are fracture resistant, and a method of manufacturing semiconductor devices utilizing such freestanding III-nitride single-crystal substrates are made available. The freestanding III-nitride single-crystal substrate includes one or more high-dislocation-density regions (20h), and a plurality of low-dislocation-density regions (20k) in which the dislocation density is lower than that of the high-dislocation-density regions (20h), wherein the average dislocation density is not greater than 5×105 cm−2. Herein, the ratio of the dislocation density of the high-dislocation-density region(s) (20h) to the average dislocation density is sufficiently large to check the propagation of cracks in the substrate. And the semiconductor device manufacturing method utilizes the freestanding III-nitride single crystal substrate (20p).
摘要翻译：可以获得平均位错密度不大于5×105cm-2并且是耐断裂性的独立的III族氮化物单晶衬底，以及利用这种独立式III族氮化物单晶衬底制造半导体器件的方法。独立的III族氮化物单晶衬底包括一个或多个高位错密度区域（20h）和位错密度低于高位错密度区域（20k）的多个低位错密度区域（20k）密度区域（20h），其中平均位错密度不大于5×105cm-2。这里，高位错密度区域（20h）的位错密度与平均位错密度的比例足够大，以检查基板中的裂纹的传播。并且半导体器件制造方法利用独立的III族氮化物单晶衬底（20p）。

5. 发明申请

US20110108852A1 GaN SUBSTRATE AND LIGHT-EMITTING DEVICE 有权
标题翻译： GaN衬底和发光器件
公开(公告)号：US20110108852A1
公开(公告)日：2011-05-12
申请号：US12981939
申请日：2010-12-30
申请人： Shinsuke FUJIWARA , Toshihiro Kotani , Fumitake Nakanishi , Seiji Nakahata , Koji Uematsu
发明人： Shinsuke FUJIWARA , Toshihiro Kotani , Fumitake Nakanishi , Seiji Nakahata , Koji Uematsu
IPC分类号： H01L33/32
CPC分类号： C30B25/00 , C30B29/406 , H01L33/32
摘要： The present GaN substrate can have an absorption coefficient not lower than 7 cm−1 for light having a wavelength of 380 nm and light having a wavelength of 1500 nm, an absorption coefficient lower than 7 cm−1 for at least light having a wavelength not shorter than 500 nm and not longer than 780 nm, and specific resistance not higher than 0.02 Ωcm. Here, the absorption coefficient for light having a wavelength not shorter than 500 nm and not longer than 780 nm can be lower than 7 cm−1. Thus, a GaN substrate having a low absorption coefficient for light having a wavelength within a light emission wavelength region of a light-emitting device and specific resistance not higher than a prescribed value and being suitable for the light-emitting device is provided.
摘要翻译：对于波长为380nm的光和波长为1500nm的光，对于至少具有波长不为波长的光，吸收系数低于7cm -1，本GaN基板的吸收系数不低于7cm -1 小于500nm且不大于780nm，电阻率不高于0.02＆OHgr; cm。这里，波长不小于500nm且不大于780nm的光的吸收系数可以低于7cm -1。因此，提供了具有低于发光器件的发光波长区域内的波长的光的吸收系数低的规定值并且不高于规定值并且适用于发光器件的GaN衬底。

6. 发明申请

US20090208749A1 Group III Nitride Single Crystal and Method of Its Growth 有权
标题翻译：第III族氮化物单晶及其生长方法
公开(公告)号：US20090208749A1
公开(公告)日：2009-08-20
申请号：US12305001
申请日：2006-06-16
申请人： Michimasa Miyanaga , Naho Mizuhara , Shinsuke Fujiwara , Seiji Nakahata , Hideaki Nakahata
发明人： Michimasa Miyanaga , Naho Mizuhara , Shinsuke Fujiwara , Seiji Nakahata , Hideaki Nakahata
IPC分类号： B32B5/16 , C30B23/00
CPC分类号： C30B23/005 , C30B29/403 , C30B35/002 , Y10T428/2982
摘要： Affords methods of growing III nitride single crystals of favorable crystallinity with excellent reproducibility, and the III nitride crystals obtained by the growth methods. One method grows a III nitride single crystal (3) inside a crystal-growth vessel (11), the method being characterized in that a porous body formed from a metal carbide, whose porosity is between 0.1% and 70% is employed in at least a portion of the crystal-growth vessel (11). Employing the crystal-growth vessel (11) makes it possible to discharge from 1% to 50% of a source gas (4) inside the crystal-growth vessel (11) via the pores in the porous body to the outside of the crystal-growth vessel (11).
摘要翻译：提供具有良好重现性的具有良好结晶度的III族氮化物单晶的方法和通过生长方法获得的III族氮化物晶体。一种方法是在晶体生长容器（11）的内部生长III族氮化物单晶（3），其特征在于，至少使用由孔隙率在0.1％至70％之间的金属碳化物形成的多孔体晶体生长容器（11）的一部分。采用晶体生长容器（11）使得可以通过多孔体中的孔将晶体生长容器（11）内的源气体（4）的1％〜50％排出到晶体生长容器生长容器（11）。

7. 发明申请

US20070145376A1 Gallium Nitride Crystal Substrate, Semiconductor Device, Method of Manufacturing Semiconductor Device, and Method of Identifying Gallium Nitride Crystal Substrate 审中-公开
标题翻译：氮化镓晶体基板，半导体器件，半导体器件的制造方法以及识别氮化镓晶体基板的方法
公开(公告)号：US20070145376A1
公开(公告)日：2007-06-28
申请号：US11616016
申请日：2006-12-26
申请人： Manabu Okui , Ken-ichiro Miyatake , Hideaki Nakahata , Shinsuke Fujiwara , Seiji Nakahata
发明人： Manabu Okui , Ken-ichiro Miyatake , Hideaki Nakahata , Shinsuke Fujiwara , Seiji Nakahata
IPC分类号： H01L29/15
CPC分类号： C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/0262
摘要： Affords GaN crystal substrates that can reduce the occurring of cracks and fractures in the GaN crystal substrates when the semiconductor devices are manufactured, semiconductor devices including them, methods of manufacturing the semiconductor devices, and methods of identifying the GaN crystal substrates. A gallium nitride crystal substrate has a surface area of 10 cm2 or more. The difference between the maximum and the minimum of Raman shifts corresponding to the E2H phonon mode in a region except for a region from the outer periphery in the surface of the gallium nitride crystal substrate to a line 5 mm radially inward from the outer periphery of the surface is 0.5 cm−1 or less. And also affords semiconductor devices including them, methods of manufacturing the semiconductor devices, and methods of identifying the GaN crystal substrates.
摘要翻译：提供了当制造半导体器件时可以减少GaN晶体衬底中的裂纹和断裂的发生的GaN晶体衬底，包括它们的半导体器件，半导体器件的制造方法以及识别GaN晶体衬底的方法。氮化镓晶体基板的表面积为10cm 2以上。在除了从氮化镓晶体基板的表面的外周到管线5mm的区域以外的区域中，对应于E＆lt; 2H＆gt;声子模式的拉曼位移的最大值和最小值之间的差异从表面的外周向内径向内侧为0.5cm -1以下。并且还提供包括它们的半导体器件，制造半导体器件的方法以及识别GaN晶体衬底的方法。

8. 发明授权

US08377204B2 Group III nitride single crystal and method of its growth 有权
标题翻译： III族氮化物单晶及其生长方法
公开(公告)号：US08377204B2
公开(公告)日：2013-02-19
申请号：US12305001
申请日：2006-06-16
申请人： Michimasa Miyanaga , Naho Mizuhara , Shinsuke Fujiwara , Seiji Nakahata , Hideaki Nakahata
发明人： Michimasa Miyanaga , Naho Mizuhara , Shinsuke Fujiwara , Seiji Nakahata , Hideaki Nakahata
IPC分类号： C30B23/00 , B32B5/16
CPC分类号： C30B23/005 , C30B29/403 , C30B35/002 , Y10T428/2982
摘要： Affords methods of growing III nitride single crystals of favorable crystallinity with excellent reproducibility, and the III nitride crystals obtained by the growth methods. One method grows a III nitride single crystal (3) inside a crystal-growth vessel (11), the method being characterized in that a porous body formed from a metal carbide, whose porosity is between 0.1% and 70% is employed in at least a portion of the crystal-growth vessel (11). Employing the crystal-growth vessel (11) makes it possible to discharge from 1% to 50% of a source gas (4) inside the crystal-growth vessel (11) via the pores in the porous body to the outside of the crystal-growth vessel (11).
摘要翻译：提供具有良好重现性的具有良好结晶度的III族氮化物单晶的方法和通过生长方法获得的III族氮化物晶体。一种方法是在晶体生长容器（11）的内部生长III族氮化物单晶（3），其特征在于，至少使用由孔隙率在0.1％至70％之间的金属碳化物形成的多孔体晶体生长容器（11）的一部分。采用晶体生长容器（11）使得可以通过多孔体中的孔将晶体生长容器（11）内的源气体（4）的1％〜50％排出到晶体生长容器生长容器（11）。

9. 发明授权

US08294245B2 GaN single-crystal mass and method of its manufacture, and semiconductor device and method of its manufacture 有权
标题翻译： GaN单晶质量及其制造方法，半导体器件及其制造方法
公开(公告)号：US08294245B2
公开(公告)日：2012-10-23
申请号：US12797617
申请日：2010-06-10
申请人： Hideaki Nakahata , Shinsuke Fujiwara , Takashi Sakurada , Yoshiyuki Yamamoto , Seiji Nakahata , Tomoki Uemura
发明人： Hideaki Nakahata , Shinsuke Fujiwara , Takashi Sakurada , Yoshiyuki Yamamoto , Seiji Nakahata , Tomoki Uemura
IPC分类号： H01L29/20
CPC分类号： H01L29/872 , C30B25/00 , C30B29/406 , H01L21/02008 , H01L21/0237 , H01L21/0254 , H01L21/0262 , H01L29/2003 , H01L29/205
摘要： Affords a GaN single-crystal mass, a method of its manufacture, and a semiconductor device and method of its manufacture, whereby when the GaN single-crystal mass is being grown, and when the grown GaN single-crystal mass is being processed into a substrate or like form, as well as when an at least single-lamina semiconductor layer is being formed onto a single-crystal GaN mass in substrate form to manufacture semiconductor devices, cracking is controlled to a minimum. The GaN single-crystal mass 10 has a wurtzitic crystalline structure and, at 30° C., its elastic constant C11 is from 348 GPa to 365 GPa and its elastic constant C13 is from 90 GPa to 98 GPa; alternatively its elastic constant C11 is from 352 GPa to 362 GPa.
摘要翻译：提供GaN单晶体，其制造方法以及其制造的半导体器件及其制造方法，由此当生长GaN单晶质量时，并且当将生长的GaN单晶体块加工成衬底或类似形式，以及当至少单层GaN半导体层以衬底形式形成在单晶GaN块上以制造半导体器件时，将裂纹控制到最小。 GaN单晶块10具有纤锌矿结晶结构，在30℃下，其弹性常数C11为348GPa至365GPa，其弹性常数C13为90GPa至98GPa; 或者其弹性常数C11为352GPa至362GPa。

10. 发明授权

US08598685B2 GaN single crystal substrate and method of manufacturing thereof and GaN-based semiconductor device and method of manufacturing thereof 有权
标题翻译： GaN单晶衬底及其制造方法和GaN基半导体器件及其制造方法
公开(公告)号：US08598685B2
公开(公告)日：2013-12-03
申请号：US12817753
申请日：2010-06-17
申请人： Shinsuke Fujiwara , Koji Uematsu , Hideki Osada , Seiji Nakahata
发明人： Shinsuke Fujiwara , Koji Uematsu , Hideki Osada , Seiji Nakahata
IPC分类号： H01L29/20
CPC分类号： H01L29/2003 , C30B25/20 , C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L29/36 , H01L33/0075 , H01L33/16
摘要： A GaN single crystal substrate has a main surface with an area of not less than 10 cm2, the main surface has a plane orientation inclined by not less than 65° and not more than 85° with respect to one of a (0001) plane and a (000-1) plane, and the substrate has at least one of a substantially uniform distribution of a carrier concentration in the main surface, a substantially uniform distribution of a dislocation density in the main surface, and a photoelasticity distortion value of not more than 5×10−5, the photoelasticity distortion value being measured by photoelasticity at an arbitrary point in the main surface when light is applied perpendicularly to the main surface at an ambient temperature of 25° C. Thus, the GaN single crystal substrate suitable for manufacture of a GaN-based semiconductor device having a small variation of characteristics can be obtained.
摘要翻译： GaN单晶衬底具有面积不小于10cm 2的主表面，主表面相对于（0001）面和（0001）面之一具有倾斜不小于65°且不大于85°的面取向（000-1）面，并且基板具有在主表面中载流子浓度基本均匀分布中的至少一个，主表面中位错密度的基本均匀分布，并且光弹性变形值不大在5×10-5以下的情况下，在25℃的环境温度下垂直于主表面照射主表面的任意点时，通过光弹性测定光弹性失真值。因此，GaN单晶基板适合可以获得具有小的特性变化的GaN基半导体器件的制造。

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