专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07943964B2 AlxGayIn1−x−yN crystal substrate, semiconductor device, and method of manufacturing the same 有权
标题翻译： AlxGayIn1-x-yN晶体基板，半导体器件及其制造方法
公开(公告)号：US07943964B2
公开(公告)日：2011-05-17
申请号：US12096986
申请日：2006-10-16
申请人： Shinsuke Fujiwara , Tomoki Uemura , Takuji Okahisa , Koji Uematsu , Manabu Okui , Muneyuki Nishioka , Shin Hashimoto
发明人： Shinsuke Fujiwara , Tomoki Uemura , Takuji Okahisa , Koji Uematsu , Manabu Okui , Muneyuki Nishioka , Shin Hashimoto
IPC分类号： H01L33/30
CPC分类号： H01L21/02658 , C30B25/02 , C30B29/403 , H01L21/02389 , H01L21/0254
摘要： An AlxGayIn1-x-yN crystal substrate of the present invention has a main plane having an area of at least 10 cm2. The main plane has an outer region located within 5 mm from an outer periphery of the main plane, and an inner region corresponding to a region other than the outer region. The inner region has a total dislocation density of at least 1×102 cm−2 and at most 1×106 cm−2. It is thereby possible to provide an AlxGayIn1-x-yN crystal substrate having a large size and a suitable dislocation density for serving as a substrate for a semiconductor device, a semiconductor device including the AlxGayIn1-x-yN crystal substrate, and a method of manufacturing the same.
摘要翻译：本发明的Al x Ga y In 1-x-y N晶体基板具有面积为至少10cm 2的主平面。主平面具有位于与主平面的外周5mm以内的外部区域和与外部区域以外的区域对应的内部区域。内部区域的总位错密度为1×102cm 2以上且1×10 6 cm -2以下。由此，可以提供具有大尺寸和合适的位错密度的Al x Ga y In 1-x-y N晶体基板，用作半导体器件的基板，包括Al x Ga y In 1-x-y N晶体基板的半导体器件，以及制造相同。

2. 发明申请

US20090194847A1 A1xGa yIn 1-x-yN CRYSTAL SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译： Al x Ga y In 1-x-y N晶体衬底，半导体器件及其制造方法
公开(公告)号：US20090194847A1
公开(公告)日：2009-08-06
申请号：US12096986
申请日：2006-10-16
申请人： Shinsuke Fujiwara , Tomoki Uemura , Takuji Okahisa , Koji Uematsu , Manabu Okui , Muneyuki Nishioka , Shin Hashimoto
发明人： Shinsuke Fujiwara , Tomoki Uemura , Takuji Okahisa , Koji Uematsu , Manabu Okui , Muneyuki Nishioka , Shin Hashimoto
IPC分类号： H01L29/20 , H01L21/20
CPC分类号： H01L21/02658 , C30B25/02 , C30B29/403 , H01L21/02389 , H01L21/0254
摘要： An AlxGayIn1-x-yN crystal substrate of the present invention has a main plane having an area of at least 10 cm2. The main plane has an outer region located within 5 mm from an outer periphery of the main plane, and an inner region corresponding to a region other than the outer region. The inner region has a total dislocation density of at least 1×102 cm−2 and at most 1×106 cm-31 2. It is thereby possible to provide an AlxGayIn1-x-yN crystal substrate having a large size and a suitable dislocation density for serving as a substrate for a semiconductor device, a semiconductor device including the AlxGayIn1-x-yN crystal substrate, and a method of manufacturing the same.
摘要翻译：本发明的Al x Ga y In 1-x-y N晶体基板具有面积为至少10cm 2的主平面。主平面具有位于与主平面的外周5mm以内的外部区域和与外部区域以外的区域对应的内部区域。内部区域的总位错密度为至少1×102cm-2，最多为1×106cm-31.2。由此，可以提供具有大尺寸和合适位错密度的Al x Ga y In 1-x-y N晶体基板，用作用于半导体器件的衬底，包括Al x Ga y In 1-x-y N晶体衬底的半导体器件及其制造方法。

3. 发明申请

US20070145376A1 Gallium Nitride Crystal Substrate, Semiconductor Device, Method of Manufacturing Semiconductor Device, and Method of Identifying Gallium Nitride Crystal Substrate 审中-公开
标题翻译：氮化镓晶体基板，半导体器件，半导体器件的制造方法以及识别氮化镓晶体基板的方法
公开(公告)号：US20070145376A1
公开(公告)日：2007-06-28
申请号：US11616016
申请日：2006-12-26
申请人： Manabu Okui , Ken-ichiro Miyatake , Hideaki Nakahata , Shinsuke Fujiwara , Seiji Nakahata
发明人： Manabu Okui , Ken-ichiro Miyatake , Hideaki Nakahata , Shinsuke Fujiwara , Seiji Nakahata
IPC分类号： H01L29/15
CPC分类号： C30B29/406 , H01L21/02389 , H01L21/02433 , H01L21/0254 , H01L21/0262
摘要： Affords GaN crystal substrates that can reduce the occurring of cracks and fractures in the GaN crystal substrates when the semiconductor devices are manufactured, semiconductor devices including them, methods of manufacturing the semiconductor devices, and methods of identifying the GaN crystal substrates. A gallium nitride crystal substrate has a surface area of 10 cm2 or more. The difference between the maximum and the minimum of Raman shifts corresponding to the E2H phonon mode in a region except for a region from the outer periphery in the surface of the gallium nitride crystal substrate to a line 5 mm radially inward from the outer periphery of the surface is 0.5 cm−1 or less. And also affords semiconductor devices including them, methods of manufacturing the semiconductor devices, and methods of identifying the GaN crystal substrates.
摘要翻译：提供了当制造半导体器件时可以减少GaN晶体衬底中的裂纹和断裂的发生的GaN晶体衬底，包括它们的半导体器件，半导体器件的制造方法以及识别GaN晶体衬底的方法。氮化镓晶体基板的表面积为10cm 2以上。在除了从氮化镓晶体基板的表面的外周到管线5mm的区域以外的区域中，对应于E＆lt; 2H＆gt;声子模式的拉曼位移的最大值和最小值之间的差异从表面的外周向内径向内侧为0.5cm -1以下。并且还提供包括它们的半导体器件，制造半导体器件的方法以及识别GaN晶体衬底的方法。

4. 发明授权

US07129525B2 Semiconductor light-emitting device 有权
标题翻译：半导体发光装置
公开(公告)号：US07129525B2
公开(公告)日：2006-10-31
申请号：US10908116
申请日：2005-04-28
申请人： Koji Uematsu , Masaki Ueno , Ryu Hirota , Hideaki Nakahata , Manabu Okui
发明人： Koji Uematsu , Masaki Ueno , Ryu Hirota , Hideaki Nakahata , Manabu Okui
IPC分类号： H01L33/00
CPC分类号： H01L33/16 , H01L33/32
摘要： Affords semiconductor light-emitting devices in which generation of spontaneous electric fields in the active layer is reduced to enable enhanced brightness. Semiconductor light-emitting device (1) is furnished with an n-type cladding layer (3), a p-type cladding layer (7) provided over the n-type cladding layer (3), and an active layer (5) composed of a nitride and provided in between the n-type cladding layer (3) and the p-type cladding layer (7), and therein is characterized in that the angle formed by an axis orthogonal to the interface between the n-type cladding layer (3) and the active layer (5), and the c-axis in the active layer (5), and the angle formed by an axis orthogonal to the interface between the active layer (5) and the p-type cladding layer (7), and the c-axis in the active layer (5), are each greater than zero.
摘要翻译：提供半导体发光器件，其中有源层中的自发电场的产生被减少以实现增强的亮度。半导体发光装置（1）具有n型包覆层（3），设置在n型覆盖层（3）上的p型覆盖层（7）和由n型覆盖层（3）构成的有源层并且设置在n型包覆层（3）和p型包覆层（7）之间，其特征在于，与正交于n型包覆层（3）和p型包层（3）和有源层（5）以及有源层（5）中的c轴，以及由与有源层（5）和p型包覆层（5）之间的界面正交的轴形成的角 7）和有源层（5）中的c轴分别大于零。

5. 发明申请

US20050242357A1 Semiconductor Light-Emitting Device 有权
标题翻译：半导体发光器件
公开(公告)号：US20050242357A1
公开(公告)日：2005-11-03
申请号：US10908116
申请日：2005-04-28
申请人： Koji Uematsu , Masaki Ueno , Ryu Hirota , Hideaki Nakahata , Manabu Okui
发明人： Koji Uematsu , Masaki Ueno , Ryu Hirota , Hideaki Nakahata , Manabu Okui
IPC分类号： H01L33/06 , H01L33/16 , H01L33/28 , H01L33/32 , H01L33/36 , H01L29/22
CPC分类号： H01L33/16 , H01L33/32
摘要： Affords semiconductor light-emitting devices in which generation of spontaneous electric fields in the active layer is reduced to enable enhanced brightness. Semiconductor light-emitting device (1) is furnished with an n-type cladding layer (3), a p-type cladding layer (7) provided over the n-type cladding layer (3), and an active layer (5) composed of a nitride and provided in between the n-type cladding layer (3) and the p-type cladding layer (7), and therein is characterized in that the angle formed by an axis orthogonal to the interface between the n-type cladding layer (3) and the active layer (5), and the c-axis in the active layer (5), and the angle formed by an axis orthogonal to the interface between the active layer (5) and the p-type cladding layer (7), and the c-axis in the active layer (5), are each greater than zero.
摘要翻译：提供半导体发光器件，其中有源层中的自发电场的产生被减少以实现增强的亮度。半导体发光装置（1）具有n型包覆层（3），设置在n型覆盖层（3）上的p型覆盖层（7）和由n型覆盖层（3）构成的有源层并且设置在n型包覆层（3）和p型包覆层（7）之间，其特征在于，与正交于n型包覆层（3）和p型包层（3）和有源层（5）以及有源层（5）中的c轴，以及由与有源层（5）和p型包覆层（5）之间的界面正交的轴形成的角 7）和有源层（5）中的c轴分别大于零。

6. 发明申请

US20120312757A1 DEVICE AND METHOD FOR TREATING BALLAST WATER FOR SHIP 有权
标题翻译：用于船舶处理压载水的装置和方法
公开(公告)号：US20120312757A1
公开(公告)日：2012-12-13
申请号：US13580175
申请日：2011-02-16
申请人： Munetsugu Ueyama , Ryusuke Nakai , Hideki Kashihara , Manabu Okui
发明人： Munetsugu Ueyama , Ryusuke Nakai , Hideki Kashihara , Manabu Okui
IPC分类号： B01D33/70 , B01D37/00 , B01D33/35
CPC分类号： B01D29/21 , B01D29/6446 , B01D29/74 , B01D29/92 , B01D33/073 , B01D33/39 , B01D33/463 , B01D35/303 , B01D2201/583 , B63J4/002 , C02F1/001 , C02F1/325 , C02F2103/008 , C02F2209/11 , C02F2303/04 , Y02T70/36
摘要： A filter disposed as a cylinder around an axis line, and provided to be rotatable around the axis line, a treated water nozzle for emitting treated water toward an outer circumferential surface of the filter, a case provided to surround the filter, and including an outer cylindrical portion having a nozzle opening of the treated water nozzle therein, a filtered water flow path for guiding filtered water that has been transmitted through the filter to outside of the case from within the cylinder of the filter, and a discharge flow path for discharging discharged water that was not filtered through the filter to the outside of the case are provided.
摘要翻译：一个过滤器，其围绕轴线设置为圆柱体，并且设置成可围绕轴线旋转;处理水喷嘴，用于朝向过滤器的外周表面喷射经处理的水，设置成围绕过滤器的壳体，并且包括外部具有处理水喷嘴的喷嘴开口的圆柱形部分，用于将已经从过滤器透过过滤器的过滤水引导到过滤器的气缸内部的过滤水流路和用于排出的排出流体还提供了没有通过过滤器过滤到壳体外部的水。

7. 发明授权

US09511310B2 Device and method for treating ballast water for ship 有权
标题翻译：用于船舶压载水处理的装置和方法
公开(公告)号：US09511310B2
公开(公告)日：2016-12-06
申请号：US13580175
申请日：2011-02-16
申请人： Munetsugu Ueyama , Ryusuke Nakai , Hideki Kashihara , Manabu Okui
发明人： Munetsugu Ueyama , Ryusuke Nakai , Hideki Kashihara , Manabu Okui
IPC分类号： B01D33/70 , B01D37/00 , B01D29/21 , B01D29/64 , B01D29/74 , B01D29/92 , C02F1/32 , B01D33/073 , B01D33/39 , B01D33/46 , B01D35/30 , B63J4/00 , C02F1/00 , C02F103/00
CPC分类号： B01D29/21 , B01D29/6446 , B01D29/74 , B01D29/92 , B01D33/073 , B01D33/39 , B01D33/463 , B01D35/303 , B01D2201/583 , B63J4/002 , C02F1/001 , C02F1/325 , C02F2103/008 , C02F2209/11 , C02F2303/04 , Y02T70/36
摘要： A filter disposed as a cylinder around an axis line, and provided to be rotatable around the axis line, a treated water nozzle for emitting treated water toward an outer circumferential surface of the filter, a case provided to surround the filter, and including an outer cylindrical portion having a nozzle opening of the treated water nozzle therein, a filtered water flow path for guiding filtered water that has been transmitted through the filter to outside of the case from within the cylinder of the filter, and a discharge flow path for discharging discharged water that was not filtered through the filter to the outside of the case are provided.
摘要翻译：一个过滤器，其围绕轴线设置为圆柱体，并且设置成可围绕轴线旋转;处理水喷嘴，用于朝向过滤器的外周表面喷射经处理的水，设置成围绕过滤器的壳体，并且包括外部具有处理水喷嘴的喷嘴开口的圆柱形部分，用于将已经从过滤器透过过滤器的过滤水引导到过滤器的气缸内部的过滤水流路和用于排出的排出流体还提供了没有通过过滤器过滤到壳体外部的水。

8. 发明授权

US5485950A Composite material, process for producing composite material, and process for producing composite material molding 失效
标题翻译：复合材料，复合材料的制造方法以及复合材料成型的制造方法
公开(公告)号：US5485950A
公开(公告)日：1996-01-23
申请号：US450396
申请日：1995-05-25
申请人： Kenichiro Shibata , Toshiyuki Hatta , Fumio Matsuyama , Masahiro Miyamoto , Manabu Okui , Masaya Nishi
发明人： Kenichiro Shibata , Toshiyuki Hatta , Fumio Matsuyama , Masahiro Miyamoto , Manabu Okui , Masaya Nishi
IPC分类号： B32B15/00 , A47J36/02 , B32B15/01 , B23K20/02 , B23K20/14
CPC分类号： A47J36/02 , B32B15/012
摘要： A composite material comprising a magnetic metal plate and an aluminum or aluminum alloy plate, the magnetic metal plate and the aluminum or aluminum alloy plate being clad together by an axial hot pressing. A process for producing a composite material which comprises the step of: cladding a magnetic metal plate with an aluminum or aluminum alloy plate by an axial hot pressing. A process for producing a composite material molding which comprises the steps of: cladding a magnetic metal plate with an aluminum or aluminum alloy plate by an axial hot pressing thereby obtaining a composite plate material; and subsequently subjecting the composite plate material to press molding and/or stamping and cutting.
摘要翻译：包括磁性金属板和铝或铝合金板的复合材料，磁性金属板和铝或铝合金板通过轴向热压包覆在一起。一种复合材料的制造方法，其特征在于，包括以下步骤：通过轴向热压包覆铝或铝合金板的磁性金属板。一种复合材料成形体的制造方法，其特征在于，包括以下步骤：通过轴向热压包覆铝或铝合金板的磁性金属板，得到复合板材; 然后对复合板材进行压制成型和/或冲压切割。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式