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41. 发明申请

US20050012345A1 Outside handle assembly of automobile 失效
标题翻译：汽车外部手柄总成
公开(公告)号：US20050012345A1
公开(公告)日：2005-01-20
申请号：US10892108
申请日：2004-07-16
申请人： Yutaka Saitoh
发明人： Yutaka Saitoh
IPC分类号： E05B1/00 , E05B77/06 , E05B77/36 , E05B83/36 , E05B85/16 , E05C9/00
CPC分类号： E05B77/04 , E05B77/06 , E05B85/16 , Y10S292/22 , Y10T292/57
摘要： An outside handle assembly for an automobile is constructed to have a handle body 3 connected to a handle base 2 secured to an automobile panel 1, and a connecting lever 7 swingably connected to the handle body 3 and driven vertically by an operating force applied to the handle body 3 so that an engaging portion 4 formed toward its lower end may push an unlocking lever 6 in a locking device 5 to release the locking device 5 from its locking state. The engaging portion 4 is formed to be disengageable from the unlocking lever 6 upon swinging of the connecting lever 7 toward the center of the automobile body. The handle base 2 is provided with a panel deformation detector 8 protruding toward the connecting lever 7. The connecting lever 7 being urged toward the panel 1 by urging member 9.
摘要翻译：用于汽车的外部手柄组件被构造成具有连接到固定到汽车面板1上的把手基座2的手柄主体3和可旋转地连接到手柄主体3并且通过施加到手柄主体3的操作力而被垂直驱动的连接杆7。手柄主体3，使得朝向其下端形成的接合部4可将锁定装置5中的解锁杆6推动以将锁定装置5从其锁定状态释放。接合部4在连接杆7朝向汽车车体的中心摆动时形成为能够与解锁杆6脱离接合。手柄基座2设置有朝向连接杆7突出的面板变形检测器8.连接杆7通过推动构件9被推向面板1。

42. 发明授权

US06613774B1 Pyrrolo [4,3,2-de] quinoline derivatives 失效
标题翻译：吡咯并[4,3,2-de]喹啉衍生物
公开(公告)号：US06613774B1
公开(公告)日：2003-09-02
申请号：US09720900
申请日：2001-01-02
申请人： Tsutomu Akama , Hiroyuki Nagata , Atsuhiro Hasegawa , Harumi Ue , Isami Takahashi , Yutaka Saitoh , Kenichi Mochida , Shun-ichi Ikeda , Yutaka Kanda
发明人： Tsutomu Akama , Hiroyuki Nagata , Atsuhiro Hasegawa , Harumi Ue , Isami Takahashi , Yutaka Saitoh , Kenichi Mochida , Shun-ichi Ikeda , Yutaka Kanda
IPC分类号： A61K314745
CPC分类号： C07D471/06
摘要： LK6-A derivatives which have immmunosuppressive activity, cell growth inhibitory activity, anti-tumor activity, etc. and which are represented by general formula (I): as defined herein, and pharmaceutically acceptable salts thereof.
摘要翻译： LK6-A衍生物，其具有免疫抑制活性，细胞生长抑制活性，抗肿瘤活性等，并且由通式（I）表示：如本文所定义，及其药学上可接受的盐。

43. 发明授权

US06320474B1 MOS-type capacitor and integrated circuit VCO using same 有权
标题翻译： MOS型电容器和集成电路使用VCO
公开(公告)号：US06320474B1
公开(公告)日：2001-11-20
申请号：US09473122
申请日：1999-12-28
申请人： Masaaki Kamiya , Yutaka Saitoh
发明人： Masaaki Kamiya , Yutaka Saitoh
IPC分类号： H01L2993
CPC分类号： H01L29/94 , H03B5/368 , H03B2201/0208 , H03K3/0307
摘要： A MOS-type capacitor includes a semiconductor substrate of a first conductive type serving as a first electrode, a conductor layer formed on the semiconductor substrate via a capacitive insulation film and serving as a second electrode, and an impurity region of a second conductive type formed in the vicinity of the surface of the semiconductor substrate at a location in proximity to a region facing the conductor layer. The MOS-type capacitor is used as a variable capacitor in a VCO (voltage-controlled oscillator) having a widened frequency range.
摘要翻译： MOS型电容器包括作为第一电极的第一导电类型的半导体衬底，经由电容绝缘膜形成并用作第二电极的半导体衬底上的导体层和形成的第二导电类型的杂质区域在靠近面向导体层的区域的位置处的半导体衬底的表面附近。在具有加宽的频率范围的VCO（压控振荡器）中使用MOS型电容器作为可变电容器。

44. 发明授权

US06306709B1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06306709B1
公开(公告)日：2001-10-23
申请号：US09270648
申请日：1999-03-16
申请人： Masanori Miyagi , Haruo Konishi , Kazuaki Kubo , Yoshikazu Kojima , Toru Shimizu , Yutaka Saitoh , Toru Machida , Tetsuya Kaneko
发明人： Masanori Miyagi , Haruo Konishi , Kazuaki Kubo , Yoshikazu Kojima , Toru Shimizu , Yutaka Saitoh , Toru Machida , Tetsuya Kaneko
IPC分类号： H01L21336
CPC分类号： H01L29/78696 , H01L21/3226 , H01L21/823462 , H01L27/0705 , H01L29/1041 , H01L29/1045 , H01L29/66757
摘要： In a MISFET, areas where a channel surface of a channel region is inverted by a first gate voltage and areas where the channel surface is inverted by a second gate voltage are provided in the channel region of the MISFET in plane as components thereof. The channel region 104 having a first impurity concentration determined by a surface concentration of a P-type semiconductor substrate and a channel region 105 having a second impurity concentration determined by doping an impurity to the region selected by a pattern 106 of a mask for doping impurity by ion implantation and others are provided in a channel region of an N-type MOSFET on the P-type semiconductor substrate. The channel region 104 having the first impurity concentration and the channel region 105 having the second impurity concentration are divided into a plurality of plane shapes. The channel region of the same MOSFET may be structured by the plurality of plane shapes having the plurality of impurity concentrations as described above and a threshold voltage of the MOSFET may be readily set to a desired value in response to a plane area ratio of the area having the first impurity concentration and the area having the second impurity concentration, allowing to realize a high performance semiconductor integrated circuit device at low cost.
摘要翻译：在MISFET中，在MISFET的沟道区域中设置沟道区域的沟道表面被第一栅极电压反转的区域和沟道表面由第二栅极电压反转的区域，作为其组成。具有由P型半导体衬底的表面浓度确定的第一杂质浓度的通道区域104和通过掺杂杂质确定的第二杂质浓度的沟道区域105，所述沟道区域105由用于掺杂杂质的掩模的图案106选择的区域通过离子注入等设置在P型半导体衬底上的N型MOSFET的沟道区中。具有第一杂质浓度的沟道区域104和具有第二杂质浓度的沟道区域105被分成多个平面形状。相同MOSFET的沟道区域可以由具有如上所述的多个杂质浓度的多个平面形状构成，并且可以根据区域的平面面积比容易地将MOSFET的阈值电压设置为期望值具有第一杂质浓度和具有第二杂质浓度的面积，从而以低成本实现高性能半导体集成电路器件。

45. 发明授权

US6114685A Solid-state radiation detector having a charge transfer device 失效
标题翻译：具有电荷转移装置的固态放射线检测器
公开(公告)号：US6114685A
公开(公告)日：2000-09-05
申请号：US12168
申请日：1998-01-22
申请人： Keiji Sato , Yutaka Saitoh
发明人： Keiji Sato , Yutaka Saitoh
IPC分类号： G01T1/24 , H01L27/14 , H01L27/146 , H01L27/148 , H01L31/09 , H01L31/10 , H01J40/14
CPC分类号： H01L27/14676 , H01L27/14893
摘要： A solid-state radiation detecting device comprises an insulation layer having a pair of opposed surfaces. First and second single crystal silicon semiconductors are disposed on respective ones of the opposed surfaces of the insulating layer. A photoelectric conversion element is disposed on the first single crystal silicon semiconductor. A signal processing circuit having a charge transfer device is disposed on the second single crystal silicon semiconductor.
摘要翻译：固态放射线检测装置包括具有一对相对表面的绝缘层。第一和第二单晶硅半导体设置在绝缘层的相对表面的相应表面上。光电转换元件设置在第一单晶硅半导体上。具有电荷转移装置的信号处理电路设置在第二单晶硅半导体上。

46. 发明授权

US5905291A MISFET semiconductor integrated circuit device 失效
标题翻译： MISFET半导体集成电路器件
公开(公告)号：US5905291A
公开(公告)日：1999-05-18
申请号：US503828
申请日：1995-07-18
申请人： Fumiyasu Utsunomiya , Yutaka Saitoh , Naoto Saitoh , Jun Osanai , Haruo Konishi , Masanori Miyagi
发明人： Fumiyasu Utsunomiya , Yutaka Saitoh , Naoto Saitoh , Jun Osanai , Haruo Konishi , Masanori Miyagi
IPC分类号： H01L21/8247 , H01L21/822 , H01L21/8234 , H01L27/02 , H01L27/04 , H01L27/06 , H01L27/088 , H01L27/10 , H01L29/788 , H01L29/792 , H01L29/772
CPC分类号： H01L27/0214 , H01L27/0629
摘要： A semiconductor integrated circuit device comprises at least two MISFETs formed on a semiconductor substrate and connected in series in a diode connection. Each of the MISFETs has a source, a drain, a channel extending between the source and the drain, and a gate disposed over the channel through a gate insulating film. One of the MISFETs has a first threshold voltage, and the other of the MISFETs has a second threshold voltage lower than the first threshold voltage. A portion of the channel of the semiconductor substrate of each of the MISFETs has an impurity concentration equal to or less than 6.times.10.sup.14 atoms/cc.
摘要翻译：半导体集成电路器件包括形成在半导体衬底上并以二极管连接串联连接的至少两个MISFET。每个MISFET具有源极，漏极，在源极和漏极之间延伸的沟道，以及通过栅极绝缘膜设置在沟道上方的栅极。一个MISFET具有第一阈值电压，另一个MISFET具有低于第一阈值电压的第二阈值电压。每个MISFET的半导体衬底的沟道的一部分具有等于或小于6×10 14原子/ cc的杂质浓度。

47. 发明授权

US5889311A Semiconductor acceleration sensor 失效
标题翻译：半导体加速度传感器
公开(公告)号：US5889311A
公开(公告)日：1999-03-30
申请号：US807179
申请日：1997-02-27
申请人： Masataka Shinogi , Yutaka Saitoh , Kenji Kato
发明人： Masataka Shinogi , Yutaka Saitoh , Kenji Kato
IPC分类号： G01L1/18 , B81B3/00 , B81B7/00 , G01L9/04 , G01P1/02 , G01P15/12 , H01L21/301 , H01L29/84 , H01L29/82
CPC分类号： B81B7/0077 , G01P1/023 , G01P15/123 , G01P2015/0828
摘要： A semiconductor device comprises a semiconductor acceleration sensor having a cuboid-shaped cantilever cut from a semiconductor wafer, a detecting device disposed on the cantilever for detecting a displacement of the cantilever due to an acceleration force applied to the cantilever, and a supporter for supporting and fixing the cantilever at one end thereof.
摘要翻译：半导体器件包括半导体加速度传感器，其具有从半导体晶片切割的长方体形悬臂，设置在悬臂上的检测装置，用于检测由于施加到悬臂的加速力而引起的悬臂的位移，以及用于支撑和在其一端固定悬臂。

48. 发明授权

US5620922A Method for fabricating CMOS device having low and high resistance portions and wire formed from a single gate polysilicon 失效
标题翻译：用于制造具有低电阻和高电阻部分以及由单个栅极多晶硅形成的导线的CMOS器件的方法
公开(公告)号：US5620922A
公开(公告)日：1997-04-15
申请号：US414003
申请日：1995-03-17
申请人： Yoshifumi Yoshida , Shinichi Yoshida , Yutaka Saitoh , Jun Osanai
发明人： Yoshifumi Yoshida , Shinichi Yoshida , Yutaka Saitoh , Jun Osanai
IPC分类号： H01L27/04 , H01L21/265 , H01L21/822 , H01L21/8238 , H01L27/092 , H01L21/70
CPC分类号： H01L21/823842 , H01L27/0925
摘要： A method for fabricating a semiconductor device having a high-resistance polysilicon and low-resistance polysilicon on the surface of a substrate comprises forming a gate oxide film on the substrate, forming a polysilicon film on the gate oxide film, and simultaneously forming a resistance, a wire, and a gate electrode from the polysilicon film by etching using a resist as a mask. Impurities are introduced into the polysilicon for controlling a resistance value thereof to form the high-resistance polysilicon resistance through ion implantation. Impurities are also introduced into the polysilicon to form the low-resistance polysilicon wire through ion implantation. N-type impurities are introduced into the gate electrode of a PMOS transistor and the source and drain regions of the PMOS transistor through ion implantation. P-type impurities are introduced into the gate electrode of an NMOS transistor and the source and drain regions of the NMOS transistor through ion implantation.
摘要翻译：在衬底表面上制造具有高电阻多晶硅和低电阻多晶硅的半导体器件的方法包括在衬底上形成栅极氧化膜，在栅极氧化膜上形成多晶硅膜，同时形成电阻，通过使用抗蚀剂作为掩模的蚀刻从多晶硅膜引出线和栅电极。将杂质引入多晶硅中以控制其电阻值，以通过离子注入形成高电阻多晶硅电阻。杂质还被引入到多晶硅中以通过离子注入形成低电阻多晶硅线。通过离子注入将N型杂质引入PMOS晶体管的栅电极和PMOS晶体管的源区和漏区。 P型杂质通过离子注入引入NMOS晶体管的栅电极和NMOS晶体管的源区和漏极区。

49. 发明授权

US5604219A Indolocarbazole derivatives that stimulate platelet production 失效
标题翻译：刺激血小板生成的吲哚咔唑衍生物
公开(公告)号：US5604219A
公开(公告)日：1997-02-18
申请号：US404961
申请日：1995-03-16
申请人： Chikara Murakata , Junichi Watanabe , Yutaka Saitoh , Yukimasa Shiotsu , Takako Shiraki , Fumihiko Kanai , Tatsuya Tamaoki , Shiro Akinaga , Masami Okabe
发明人： Chikara Murakata , Junichi Watanabe , Yutaka Saitoh , Yukimasa Shiotsu , Takako Shiraki , Fumihiko Kanai , Tatsuya Tamaoki , Shiro Akinaga , Masami Okabe
IPC分类号： C07D498/22 , C07H9/06 , A61K31/55
CPC分类号： C07D498/22 , C07H9/06
摘要： Disclosed is an indolocarbazole derivative represented by the following formula (I), or a pharmaceutically acceptable salt thereof: ##STR1## [wherein R.sup.1 represents substituted or unsubstituted lower alkyl, R.sup.2 represents hydrogen, substituted or unsubstituted lower alkyl, R.sup.3 and R.sup.4 are the same or different, and represent hydrogen, nitro, NR.sup.5 R.sup.6, OR.sup.9, substituted or unsubstituted lower alkyl, substituted or unsubstituted lower alkenyl, or CH.dbd.NNR.sup.10 R.sup.11, W represents two hydrogen atoms or oxygen, and Me represents methyl, provided that when R.sup.1 is unsubstituted lower alkyl, R.sup.3 and R.sup.4 are not simultaneously hydrogen.
摘要翻译：公开了下式（I）表示的吲哚咔唑衍生物或其药学上可接受的盐：其中R 1表示取代或未取代的低级烷基，R 2表示氢，取代或未取代的低级烷基，R 3和R 4 代表氢，硝基，NR5R6，OR9，取代或未取代的低级烷基，取代或未取代的低级链烯基或CH = NNR10R11，W代表两个氢原子或氧，Me代表甲基，条件是当R 1 未取代的低级烷基，R3和R4不同时为氢。

50. 发明授权

US5345209A Adjustment system for a coil device 失效
标题翻译：线圈装置的调整系统
公开(公告)号：US5345209A
公开(公告)日：1994-09-06
申请号：US922693
申请日：1992-07-30
申请人： Yutaka Saitoh , Shinichiro Ito , Yukiharu Kinoshita
发明人： Yutaka Saitoh , Shinichiro Ito , Yukiharu Kinoshita
IPC分类号： H01F17/04 , H01F21/06 , H01F21/02 , H01F27/26
CPC分类号： H01F21/065 , H01F17/043 , Y10T29/49004 , Y10T29/49071 , Y10T29/49073
摘要： The present invention is comprised of an outside magnetic substance forming an endless loop, an inside magnetic substance formed inside of said outside magnetic substance and coil wound on the periphery of said inside magnetic substance. In a coil device of the present invention with gaps between both ends of said outside magnetic substance and said inside magnetic substance, notches or holes are provided in said outside magnetic substance for the purpose of inserting insert a jig therein so as to adjustably move the position of said inside magnetic substance, wherein said notches or holes correspond to the gaps provided in both ends of said inside magnetic substance. In said coil device, the inside magnetic substance can be adjusted and moved its position by pressing a bar-like jig through the notches or the holes provided in the outside magnetic substance. Thus, it has become possible to adjust the value of the inductance by about 25% experimentally.
摘要翻译：本发明包括形成环形环的外部磁性物质，形成在所述外部磁性物质内部的内部磁性物质和缠绕在所述内部磁性物质周围的线圈。在本发明的线圈装置中，在所述外部磁性物质的两端与所述内部磁性物质之间具有间隙的情况下，在所述外部磁性物质中设置有凹槽或孔，用于将夹具插入其中以便可调节地移动位置的所述内部磁性物质，其中所述凹口或孔对应于设置在所述内部磁性物质两端的间隙。在所述线圈装置中，通过将棒状的夹具按压在外部的磁性物质上的凹口或孔内，能够调整内部的磁性物质并使其移动。因此，可以通过实验将电感值调整约25％。

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