专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US06498376B1 Semiconductor device and manufacturing method thereof 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US06498376B1
公开(公告)日：2002-12-24
申请号：US08459831
申请日：1995-06-02
申请人： Masanori Miyagi , Haruo Konishi , Kazuaki Kubo , Yoshikazu Kojima , Toru Shimizu , Yutaka Saitoh , Toru Machida , Tetsuya Kaneko
发明人： Masanori Miyagi , Haruo Konishi , Kazuaki Kubo , Yoshikazu Kojima , Toru Shimizu , Yutaka Saitoh , Toru Machida , Tetsuya Kaneko
IPC分类号： H01L2976
CPC分类号： H01L29/78696 , H01L21/3226 , H01L21/823462 , H01L27/0705 , H01L29/1041 , H01L29/1045 , H01L29/66757
摘要： A MISFET is provided with a segmented channel comprising regions in which the channel is inverted by a first gate voltage and regions in which the channel is inverted by a second gate voltage. The MISFET is formed in a semiconductor substrate having a first conductivity type and the first inversion region of the channel has a first impurity concentration determined by the surface concentration of the substrate. The second inversion region of the channel has a second impurity concentration determined by doping an impurity to the region selected by a photolithographic process. The first and second inversion regions may be divided into a plurality of plane shapes and the threshold voltage of the MISFET is set to a desired value in accordance with the plane area ratio of the first and second inversion regions.
摘要翻译： MISFET设置有分段通道，该分段通道包括其中通道被第一栅极电压反相的区域和通道以第二栅极电压反相的区域。 MISFET形成在具有第一导电类型的半导体衬底中，沟道的第一反相区域具有由衬底的表面浓度确定的第一杂质浓度。通道的第二反转区域具有通过将杂质掺杂到通过光刻工艺选择的区域而确定的第二杂质浓度。第一反转区域和第二反转区域可以被划分成多个平面形状，并且根据第一和第二反转区域的平面面积比将MISFET的阈值电压设置为期望值。

2. 发明授权

US06306709B1 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US06306709B1
公开(公告)日：2001-10-23
申请号：US09270648
申请日：1999-03-16
申请人： Masanori Miyagi , Haruo Konishi , Kazuaki Kubo , Yoshikazu Kojima , Toru Shimizu , Yutaka Saitoh , Toru Machida , Tetsuya Kaneko
发明人： Masanori Miyagi , Haruo Konishi , Kazuaki Kubo , Yoshikazu Kojima , Toru Shimizu , Yutaka Saitoh , Toru Machida , Tetsuya Kaneko
IPC分类号： H01L21336
CPC分类号： H01L29/78696 , H01L21/3226 , H01L21/823462 , H01L27/0705 , H01L29/1041 , H01L29/1045 , H01L29/66757
摘要： In a MISFET, areas where a channel surface of a channel region is inverted by a first gate voltage and areas where the channel surface is inverted by a second gate voltage are provided in the channel region of the MISFET in plane as components thereof. The channel region 104 having a first impurity concentration determined by a surface concentration of a P-type semiconductor substrate and a channel region 105 having a second impurity concentration determined by doping an impurity to the region selected by a pattern 106 of a mask for doping impurity by ion implantation and others are provided in a channel region of an N-type MOSFET on the P-type semiconductor substrate. The channel region 104 having the first impurity concentration and the channel region 105 having the second impurity concentration are divided into a plurality of plane shapes. The channel region of the same MOSFET may be structured by the plurality of plane shapes having the plurality of impurity concentrations as described above and a threshold voltage of the MOSFET may be readily set to a desired value in response to a plane area ratio of the area having the first impurity concentration and the area having the second impurity concentration, allowing to realize a high performance semiconductor integrated circuit device at low cost.
摘要翻译：在MISFET中，在MISFET的沟道区域中设置沟道区域的沟道表面被第一栅极电压反转的区域和沟道表面由第二栅极电压反转的区域，作为其组成。具有由P型半导体衬底的表面浓度确定的第一杂质浓度的通道区域104和通过掺杂杂质确定的第二杂质浓度的沟道区域105，所述沟道区域105由用于掺杂杂质的掩模的图案106选择的区域通过离子注入等设置在P型半导体衬底上的N型MOSFET的沟道区中。具有第一杂质浓度的沟道区域104和具有第二杂质浓度的沟道区域105被分成多个平面形状。相同MOSFET的沟道区域可以由具有如上所述的多个杂质浓度的多个平面形状构成，并且可以根据区域的平面面积比容易地将MOSFET的阈值电压设置为期望值具有第一杂质浓度和具有第二杂质浓度的面积，从而以低成本实现高性能半导体集成电路器件。

3. 发明申请

US20100118624A1 READ CIRCUIT FOR SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR MEMORY DEVICE 有权
标题翻译：用于半导体存储器件和半导体存储器件的读取电路
公开(公告)号：US20100118624A1
公开(公告)日：2010-05-13
申请号：US12614909
申请日：2009-11-09
申请人： Tetsuya Kaneko
发明人： Tetsuya Kaneko
IPC分类号： G11C7/00
CPC分类号： G11C7/103 , G11C7/1039
摘要： Provided is a read circuit for a semiconductor memory device which may have a reduced circuit scale, and a semiconductor memory device. In a plurality of sense amplifiers of the read circuit of the semiconductor memory device, for serially reading data from a serial output terminal, if a number of byte selectors which may be selected to determine an address at a predetermined time before determination of the address is four, only four sense amplifiers are required in total, and hence the read circuit and the semiconductor memory device are reduced in circuit scale.
摘要翻译：提供了一种可能具有减小的电路规模的半导体存储器件的读取电路和半导体存储器件。在半导体存储器件的读取电路的多个读出放大器中，用于从串行输出端子串行读取数据，如果在确定地址之前的预定时间可以选择确定地址的字节选择器的数量是四个总共仅需要四个读出放大器，因此读取电路和半导体存储器件的电路规模缩小。

4. 发明授权

US07033013B2 Pretreatment liquid for recording material and image recording method using the pretreatment liquid 有权
标题翻译：用于记录材料的预处理液和使用预处理液的图像记录方法
公开(公告)号：US07033013B2
公开(公告)日：2006-04-25
申请号：US10889140
申请日：2004-07-13
申请人： Masayuki Koyano , Hitoshi Arita , Tetsuya Kaneko , Nobutaka Osada , Kakuji Murakami , Akihiko Gotoh , Akiko Bannai , Tomoko Maeda , Kiyofumi Nagai
发明人： Masayuki Koyano , Hitoshi Arita , Tetsuya Kaneko , Nobutaka Osada , Kakuji Murakami , Akihiko Gotoh , Akiko Bannai , Tomoko Maeda , Kiyofumi Nagai
IPC分类号： B41J2/01
CPC分类号： B41M5/0017 , B41M5/508 , B41M7/009 , C09D11/30 , C09D11/54 , Y10T428/24802
摘要： An image recording method including: applying a pretreatment liquid on a surface of a recording material; and discharging a recording ink according to image signals to form an ink image on the pretreatment liquid on the surface of the recording material before the pretreatment liquid applied to the recording material has dried, wherein the recording ink includes a solvent and a component dispersed or dissolved in the solvent, wherein the pretreatment liquid includes a compound depressing at least one of the dispersibility and solubility of the component in the recording ink in an amount of 10 to 80% by weight based on total weight, and wherein the pretreatment liquid has a viscosity of from 100 to 10,000 mPa·s at 25° C.
摘要翻译：一种图像记录方法，包括：将预处理液体施加到记录材料的表面上; 并且在施加到记录材料的预处理液体干燥之前，根据图像信号排出记录油墨以在记录材料的表面上的预处理液体上形成油墨图像，其中记录油墨包括溶剂和分散或溶解的成分在所述溶剂中，其中所述预处理液体包含基于总重量以10至80重量％的量将所述组分在所述记录油墨中的分散性和溶解度中的至少一种抑制至少一种的化合物，并且其中所述预处理液体具有粘度在25℃下为100至10,000mPa.s

5. 发明授权

US06905384B2 Method and apparatus for manufacturing image displaying apparatus 失效
标题翻译：用于制造图像显示装置的方法和装置
公开(公告)号：US06905384B2
公开(公告)日：2005-06-14
申请号：US09781305
申请日：2001-02-13
申请人： Toshihiko Miyazaki , Kohei Nakata , Tetsuya Kaneko
发明人： Toshihiko Miyazaki , Kohei Nakata , Tetsuya Kaneko
IPC分类号： H01J9/39 , H01J9/18 , H01J9/26 , H01J9/38 , H01J9/40 , H01J9/46 , H01J9/48 , H01J9/00
CPC分类号： H01J9/46 , H01J9/18 , H01J9/38 , H01J9/48 , H01J2329/00
摘要： A method and an apparatus for manufacturing an image displaying apparatus having a display panel. A first substrate of the display panel on which a phosphor exciter is disposed and a second substrate of the display panel on which phosphors emitting light by the phosphor exciter is provided, are prepared under a vacuum atmosphere. Then, the first and the second substrates are carried in a getter processing chamber or bake processing chamber, and getter processing or bake processing is applied thereto under the vacuum atmosphere. After the processing, the first and the second substrates are carried in a seal processing chamber, where the substrates are heat sealed under the vacuum atmosphere. Thus, reduction of vacuum exhaust time and a high vacuum degree in manufacturing an image displaying apparatus is attained and efficiency of manufacturing is improved.
摘要翻译：一种用于制造具有显示面板的图像显示装置的方法和装置。在真空气氛下制备其上设置有荧光体激发器的显示面板的第一基板和设置有由荧光体激发器发光的荧光体的显示面板的第二基板。然后，将第一和第二基板载带在吸气处理室或烘烤处理室中，并在真空环境下对其进行吸气处理或烘烤处理。在处理之后，第一和第二基板被携带在密封处理室中，其中基板在真空气氛下被热密封。因此，在制造图像显示装置中实现真空排气时间的减少和真空度的提高，并且提高了制造效率。

6. 发明授权

US06705909B2 Image-forming device 失效
标题翻译：图像形成装置
公开(公告)号：US06705909B2
公开(公告)日：2004-03-16
申请号：US09987309
申请日：2001-11-14
申请人： Ichiro Nomura , Hidetoshi Suzuki , Tetsuya Kaneko , Shinya Mishina , Naoto Nakamura
发明人： Ichiro Nomura , Hidetoshi Suzuki , Tetsuya Kaneko , Shinya Mishina , Naoto Nakamura
IPC分类号： H01J902
CPC分类号： G09G3/22 , G09G2300/0426 , H01J1/316 , H01J29/028 , H01J29/864 , H01J31/127 , H01J2201/3165 , H01J2329/8625 , H01J2329/863 , H01J2329/864 , H01J2329/8645 , H01J2329/8655
摘要： An image-forming device having, in an envelope, an electron-emitting element, an image-forming member for forming an image by irradiation of an electron beam emitted from the electron-emitting element, and an electroconductive supporting member for supporting the envelope. The potential of the supporting member is controlled to not be higher than the maximum potential applied to the electron-emitting element. The electron-emitting element and the image-forming member can be placed in juxtaposition on the same substrate, an electro-conductive substrate can be additionally provided in opposition to the face of the substrate, and the supporting member can be connected electrically to one of the electrodes and also to the electro-conductive substrate.
摘要翻译：一种图像形成装置，在外壳中具有电子发射元件，用于通过照射从电子发射元件发射的电子束形成图像的图像形成部件和用于支撑外壳的导电支撑部件。支撑构件的电位被控制为不高于施加到电子发射元件的最大电位。电子发射元件和图像形成部件可以并置在同一基板上，可以相对于基板的表面另外设置导电基板，并且支撑部件可以电连接到电极以及导电性基板。

7. 发明授权

US06637875B2 Aqueous recording liquid, recording method and apparatus using same 有权
公开(公告)号：US06637875B2
公开(公告)日：2003-10-28
申请号：US10103729
申请日：2002-03-25
申请人： Tetsuya Kaneko , Hitoshi Arita , Kiyofumi Nagai , Kakuji Murakami
发明人： Tetsuya Kaneko , Hitoshi Arita , Kiyofumi Nagai , Kakuji Murakami
IPC分类号： B41J201
CPC分类号： C09D11/30 , C09D11/38
摘要： An aqueous recording liquid suitable for use in ink jet printing containing a colorant, 2,2,4-trimethyl-1,3-pentanediol, and at least one surfactant selected from polyoxyethylene alkyl ethers and polyoxyethylene alkyl ether acetates.

8. 发明授权

US06634916B2 Manufacturing method and manufacturing apparatus of image displaying apparatus 失效
公开(公告)号：US06634916B2
公开(公告)日：2003-10-21
申请号：US09813138
申请日：2001-03-21
申请人： Tetsuya Kaneko , Kohei Nakata , Toshihiko Miyazaki
发明人： Tetsuya Kaneko , Kohei Nakata , Toshihiko Miyazaki
IPC分类号： H01J926
CPC分类号： H01J9/241 , H01J9/24 , H01J9/46 , H01J9/48 , H01J2209/017 , H01J2209/26 , H01J2209/385 , H01J2329/864 , H01J2329/8645 , H01J2329/8655 , H01J2329/866
摘要： An image display appratus is manufactured by processing a panel member through a plurality of chambers including ones for a bake processing and a getter processing. The getter processng is performed at a temperature lower than a temperature of the panel member subjected to the bake processing, to prevent degrading of a getter film.

9. 发明授权

US06477079B2 Voltage generator for semiconductor device 失效
标题翻译：半导体器件用电压发生器
公开(公告)号：US06477079B2
公开(公告)日：2002-11-05
申请号：US09313282
申请日：1999-05-18
申请人： Tetsuya Kaneko , Junichi Okamura
发明人： Tetsuya Kaneko , Junichi Okamura
IPC分类号： G11C1124
CPC分类号： G11C7/06
摘要： A voltage generator for outputting an output voltage at an output terminal thereof includes a driver MOS transistor of a first conductivity type having a first end connected to said output terminal and a capacitor connected between the output terminal and a second voltage node. The capacitor comprises a plurality of trench capacitors formed in a semiconductor substrate.
摘要翻译：用于在其输出端子输出输出电压的电压发生器包括第一导电类型的驱动器MOS晶体管，其具有连接到所述输出端子的第一端和连接在输出端子与第二电压节点之间的电容器。电容器包括形成在半导体衬底中的多个沟槽电容器。

10. 发明授权

US06313815B1 Electron source and production thereof and image-forming apparatus and production thereof 失效
标题翻译：电子源及其制造方法及成像装置及其制造
公开(公告)号：US06313815B1
公开(公告)日：2001-11-06
申请号：US08820028
申请日：1997-03-19
申请人： Toshihiko Takeda , Ichiro Nomura , Hidetoshi Suzuki , Yoshikazu Banno , Tetsuya Kaneko
发明人： Toshihiko Takeda , Ichiro Nomura , Hidetoshi Suzuki , Yoshikazu Banno , Tetsuya Kaneko
IPC分类号： G09G322
CPC分类号： G09G3/006 , G09G3/22 , G09G2330/10
摘要： An electron source is constituted of a substrate, and an electron-emitting element provided on the substrate. The electron-emitting element comprises a plurality of electrode pairs having an electroconductive film between each of the electrode pairs. An electron-emitting region is formed on the electroconductive film of selected ones of the electrode pairs.
摘要翻译：电子源由基板和设置在基板上的电子发射元件构成。电子发射元件包括在每个电极对之间具有导电膜的多个电极对。在所选择的电极对的导电膜上形成电子发射区。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式