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41. 发明申请

US20050095859A1 Precursor delivery system with rate control 审中-公开
标题翻译：带速率控制的前置发送系统
公开(公告)号：US20050095859A1
公开(公告)日：2005-05-05
申请号：US10700328
申请日：2003-11-03
申请人： Ling Chen , Phillip Kang , Seshadri Ganguli
发明人： Ling Chen , Phillip Kang , Seshadri Ganguli
IPC分类号： C23C16/448 , C23C16/52 , H01L21/285 , H01L21/302 , H01L21/461
CPC分类号： C23C16/52 , C23C16/4481 , H01L21/28556
摘要： A method and apparatus for a gas delivery system to deliver a precursor from a vessel to a process chamber via a process gas produced by flowing a first carrier gas into the vessel and combining with a second carrier gas flowing through a bypass around the vessel and a precursor monitoring apparatus disposed between the process chamber and the vessel. The precursor monitoring apparatus has a gas analyzer to generate a first signal indicative of a concentration of the precursor in the process gas or to a signal indicative of a flow rate of the process gas.
摘要翻译：一种用于气体输送系统的方法和装置，用于通过将第一载气流入容器并与流过绕容器的旁路的第二载气合并，将容器中的前体从容器输送到处理室，前体监测装置设置在处理室和容器之间。前体监测装置具有气体分析器，以产生指示处理气体中的前体浓度的第一信号或指示处理气体的流量的信号。

42. 发明授权

US06873642B1 Method and device for processing a received signal transmitting coded data 有权
标题翻译：用于处理发送编码数据的接收信号的方法和装置
公开(公告)号：US06873642B1
公开(公告)日：2005-03-29
申请号：US09830516
申请日：1999-10-13
申请人： Wolfgang Fey , Ling Chen
发明人： Wolfgang Fey , Ling Chen
IPC分类号： B60T8/00 , H03M5/08 , H04L25/06 , H04L25/48 , H04L25/49 , H04L25/493 , H03D1/00
CPC分类号： H04L25/493 , H04L25/069
摘要： The present invention relates to a method for conditioning a received signal that transmits coded data, wherein the coding of the data includes a defined coding clock pulse and the signal includes edges produced in accordance with the coding clock pulse, wherein from the received signal a time constant (tm) set in accordance with the coding clock pulse is determined, a first signal part which has a first edge is conditioned at a first time that is set in accordance with the time constant (tm) or in a first time window that is set in accordance with the time constant (tm), and a second signal part which has a second edge is conditioned at a second time that is set in accordance with the time constant (tm) and in dependence on the time of the first edge or in a second time window that is set in accordance with the time constant (tm) and in dependence on the time of the first edge.
摘要翻译：本发明涉及一种用于调节发送编码数据的接收信号的方法，其中数据的编码包括定义的编码时钟脉冲，并且该信号包括根据编码时钟脉冲产生的边缘，其中从接收信号中的时间确定根据编码时钟脉冲设定的常数（tm），具有第一边缘的第一信号部分在根据时间常数（tm）设置的第一时间被调节，或者在第一时间窗口根据时间常数（tm）设置，并且具有第二边缘的第二信号部分在根据时间常数（tm）设置的第二时间和根据第一边缘的时间或在根据时间常数（tm）设定的第二时间窗口中，并且依赖于第一边缘的时间。

43. 发明授权

US06821891B2 Atomic layer deposition of copper using a reducing gas and non-fluorinated copper precursors 失效
标题翻译：使用还原气体和非氟化铜前体的原子层沉积铜
公开(公告)号：US06821891B2
公开(公告)日：2004-11-23
申请号：US10295770
申请日：2002-11-15
申请人： Ling Chen , Mei Chang
发明人： Ling Chen , Mei Chang
IPC分类号： H01L2144
CPC分类号： H01L21/76877 , C23C16/18 , C23C16/4402 , C23C16/45553 , H01L21/28562 , H01L21/7681 , Y10S438/905
摘要： Methods of forming copper films by sequentially introducing and then reacting nitrogen containing analogs of Copper II &bgr;-diketonates which analogs are more stable source reagents for copper deposition. The nitrogen containing analogs replace —O— with —N(R″)— wherein R″ is an alkyl group having from one to four carbon atoms. Replacement of each —O— is preferred although replacement of one —O— per cyclic ring is sufficient to improve stability of the copper source reagents. The source reagent can be purified by sublimation to remove solvents and excess ligands prior to semiconductor processing. The processing chamber is preferably a cyclical deposition chamber maintained at a pressure of less than about 10 Torr and the substrate is maintained at a temperature of about 50 to about 200° C.
摘要翻译：通过依次引入和然后使含有铜IIβ-二酮的类似物的反应形成铜膜的方法，其中类似物是用于铜沉积的更稳定的源试剂。含氮的类似物用-N（R“） - 取代-O-，其中R”是具有1-4个碳原子的烷基。每个-O-的替代是优选的，尽管每个环的一个-O-取代足以提高铜源试剂的稳定性。源试剂可以通过升华纯化，以在半导体加工之前除去溶剂和过量的配体。处理室优选是保持在小于约10托的压力下的循环沉积室，并将基板保持在约50至约200℃的温度。

44. 发明授权

US06772072B2 Method and apparatus for monitoring solid precursor delivery 有权
公开(公告)号：US06772072B2
公开(公告)日：2004-08-03
申请号：US10200613
申请日：2002-07-22
申请人： Seshadri Ganguli , Vincent W. Ku , Hua Chung , Ling Chen
发明人： Seshadri Ganguli , Vincent W. Ku , Hua Chung , Ling Chen
IPC分类号： G06F1900
CPC分类号： C23C16/52 , C23C16/4481
摘要： A method and apparatus for monitoring the delivery of a solid precursor from a vessel to a process chamber via a process gas produced by flowing a carrier gas into the vessel is provided. The precursor typically changes state from a solid to a gas (vapor) through a sublimation process within the chamber. The apparatus comprises a gas analyzer to generate a first signal indicative of a density of the precursor in the process gas and a controller. The controller receives the first signal and a second signal indicative of a volume flow rate of the process gas or the carrier gas and calculates a mass flow rate and/or a total amount consumed of the precursor based on the first and second signals. The controller may calculate an amount precursor remaining in the vessel based on the total amount consumed and an initial amount. The amount of precursor remaining in the vessel may be used by an operator to efficiently schedule replacement or replenishment of the precursor in an effort to minimize material waste and processing down time.

45. 发明授权

US06660622B2 Process for removing an underlying layer and depositing a barrier layer in one reactor 有权
标题翻译：用于去除下层并在一个反应器中沉积阻挡层的方法
公开(公告)号：US06660622B2
公开(公告)日：2003-12-09
申请号：US10290746
申请日：2002-11-07
申请人： Ling Chen , Seshadri Ganguli , Wei Cao , Christophe Marcadal
发明人： Ling Chen , Seshadri Ganguli , Wei Cao , Christophe Marcadal
IPC分类号： H01L213205
CPC分类号： H01L21/76844 , H01L21/2855 , H01L21/28556 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L21/76865
摘要： A method of forming barrier layers in a via hole extending through an inter-level dielectric layer and including a preformed first barrier coated onto the bottom and sidewalls of the via holes. In a single plasma sputter reactor, a first step sputters the wafer rather than the target with high energy ions to remove the barrier layer from the bottom of the via but not from the sidewalls and a second step sputter deposits a second barrier layer, for example of Ta/TaN, onto the via bottom and sidewalls. The two steps may be differentiated by power applied to the target, by chamber pressure, or by wafer bias. The second step may include the simultaneous removal of the first barrier layer from the via bottom and sputter deposition of the second barrier layer onto the via sidewalls.
摘要翻译：在穿过层间电介质层的通孔中形成阻挡层的方法，包括涂覆在通孔的底部和侧壁上的预先形成的第一屏障。在单个等离子体溅射反应器中，第一步骤以高能离子将晶片而不是目标物喷射，以从通孔的底部除去阻挡层，而不是从侧壁排出，第二步骤溅射沉积第二阻挡层，例如的Ta / TaN，通过底部和侧壁。这两个步骤可以通过施加到靶，通过室压力或通过晶片偏置的功率来区分。第二步骤可以包括从通孔底部同时移除第一阻挡层并将第二阻挡层溅射到通孔侧壁上。

46. 发明授权

US06607976B2 Copper interconnect barrier layer structure and formation method 失效
标题翻译：铜互连屏障层结构和形成方法
公开(公告)号：US06607976B2
公开(公告)日：2003-08-19
申请号：US09964108
申请日：2001-09-25
申请人： Ling Chen , Seshadri Ganguli , Christophe Marcadal , Wei Cao , Roderick C. Mosely , Mei Chang
发明人： Ling Chen , Seshadri Ganguli , Christophe Marcadal , Wei Cao , Roderick C. Mosely , Mei Chang
IPC分类号： H01L214763
CPC分类号： H01L21/76843 , H01L21/28556 , H01L21/28562 , H01L21/76846 , H01L21/76876 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A method for forming a tungsten-containing copper interconnect barrier layer (e.g., a tungsten [W] or tungsten-nitride [WXN] copper interconnect barrier layer) on a substrate with a high (e.g., greater than 30%) sidewall step coverage and ample adhesion to underlying dielectric layers. The method includes first depositing a thin titanium-nitride (TiN) or tantalum nitride (TaN) nucleation layer on the substrate, followed by the formation of a tungsten-containing copper interconnect barrier layer (e.g., a W or WXN copper interconnect barrier layer) overlying the substrate. The tungsten-containing copper interconnect barrier layer can, for example, be formed using a Chemical Vapor Deposition (CVD) technique that employs a fluorine-free tungsten-containing gas (e.g., tungsten hexacarbonyl [W(CO)6]) or a WF6-based Atomic Layer Deposition (ALD) technique. The presence of a thin TiN (or TaN) nucleation layer facilitates the formation of a tungsten-containing copper interconnect barrier layer with a sidewall step coverage of greater than 30% and ample adhesion to dielectric layers. A copper interconnect barrier layer structure includes a thin titanium-nitride (TiN) (or tantalum nitride [TaN]) nucleation layer disposed directly on the dielectric substrate (e.g., a single or dual-damascene copper interconnect dielectric substrate). The copper interconnect barrier layer structure also includes a tungsten-containing copper interconnect barrier layer (e.g., a W or WXN copper interconnect barrier layer) formed on the thin TiN (or TaN) nucleation layer using, for example, a CVD technique that employs a fluorine-free tungsten-containing gas (e.g., [W(CO)6]) or a WF6-based ALD technique.
摘要翻译：在具有高（例如，大于30％）侧壁台阶覆盖的基板上形成含钨铜互连势垒层（例如，钨[W]或氮化钨[WXN]铜互连势垒层）的方法，以及充足的粘附到底层电介质层。该方法包括首先在衬底上沉积薄的氮化钛（TiN）或氮化钽（TaN）成核层，随后形成含钨的铜互连屏障层（例如W或WXN铜互连阻挡层）覆盖基板。含钨铜互连阻挡层例如可以使用使用无氟含钨气体（例如六羰基钨[W（CO）6]）或WF 6的化学气相沉积（CVD）技术来形成的原子层沉积（ALD）技术。薄TiN（或TaN）成核层的存在有助于形成具有大于30％的侧壁台阶覆盖率和对电介质层的充分粘合性的含钨铜互连屏障层。铜互连势垒层结构包括直接设置在电介质基板（例如，单镶嵌铜互连电介质基板）上的薄氮化钛（TiN）（或氮化钽[TaN]）成核层。铜互连阻挡层结构还包括使用例如CVD技术在薄TiN（或TaN）成核层上形成的含钨铜互连势垒层（例如，W或WXN铜互连势垒层），其采用无氟含钨气体（例如[W（CO）6]）或基于WF6的ALD技术。

47. 发明授权

US06562715B1 Barrier layer structure for copper metallization and method of forming the structure 失效
标题翻译：铜金属化的阻挡层结构和形成结构的方法
公开(公告)号：US06562715B1
公开(公告)日：2003-05-13
申请号：US09635738
申请日：2000-08-09
申请人： Ling Chen , Christophe Marcadal
发明人： Ling Chen , Christophe Marcadal
IPC分类号： C23C1418
CPC分类号： H01L21/76846 , C23C16/34 , C23C28/322 , C23C28/34 , H01L21/28568 , H01L21/76873 , H01L21/76874 , H01L2221/1089
摘要： A barrier layer structure and a method of forming the structure. The barrier layer structure comprises a bilayer, with a first layer formed by chemical vapor deposition and a second layer formed by physical vapor deposition. The first barrier layer comprises a metal or a metal nitride and the second barrier layer comprises a metal or a metal nitride. The barrier bilayer is applicable to copper metallization.
摘要翻译：阻挡层结构和形成该结构的方法。阻挡层结构包括双层，具有通过化学气相沉积形成的第一层和通过物理气相沉积形成的第二层。第一阻挡层包括金属或金属氮化物，第二阻挡层包括金属或金属氮化物。屏障双层适用于铜金属化。

48. 发明授权

US06498091B1 Method of using a barrier sputter reactor to remove an underlying barrier layer 有权
标题翻译：使用阻挡溅射反应器去除下面的阻挡层的方法
公开(公告)号：US06498091B1
公开(公告)日：2002-12-24
申请号：US09704161
申请日：2000-11-01
申请人： Ling Chen , Seshadri Ganguli , Wei Cao , Christophe Marcadal
发明人： Ling Chen , Seshadri Ganguli , Wei Cao , Christophe Marcadal
IPC分类号： H01L214763
CPC分类号： H01L21/76844 , H01L21/2855 , H01L21/28556 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L21/76865
摘要： A method and resultant structure of forming barrier layers in a via hole extending through an inter-level dielectric layer. A first barrier layer of TiSiN is conformally coated by chemical vapor deposition onto the bottom and sidewalls of the via holes and in the field area on top of the dielectric layer. A single plasma sputter reactor is used to perform two steps. In the first step, the wafer rather than the target is sputtered with high energy ions to remove the barrier layer from the bottom of the via but not from the sidewalls. In the second step, a second barrier layer, for example of Ta/TaN, is sputter deposited onto the via bottom and sidewalls. The two steps may be differentiated by power applied to the target, by chamber pressure, or by wafer bias. The second step may include the simultaneous removal of the first barrier layer from the via bottom and sputter deposition of the second barrier layer onto the via sidewalls. Chamber conditions in the first step, including balancing neutrals and ions, may be controlled to remove the first barrier layer from the via bottom while leaving it on the more exposed the field area.
摘要翻译：在延伸穿过层间电介质层的通孔中形成势垒层的方法和结果。 TiSiN的第一阻挡层通过化学气相沉积保形地涂覆在通孔的底部和侧壁以及介电层顶部的场区中。使用单个等离子体溅射反应器执行两个步骤。在第一步骤中，用高能离子溅射晶片而不是靶，以从通孔的底部除去阻挡层，而不是从侧壁去除阻挡层。在第二步骤中，例如Ta / TaN的第二阻挡层被溅射沉积到通孔底部和侧壁上。这两个步骤可以通过施加到靶，通过室压力或通过晶片偏置的功率来区分。第二步骤可以包括从通孔底部同时移除第一阻挡层并将第二阻挡层溅射到通孔侧壁上。可以控制第一步骤中的室内条件，包括平衡中性粒子和离子，以将第一阻挡层从通孔底部移除，同时将其留在暴露在场区域上。

49. 发明授权

US06410089B1 Chemical vapor deposition of copper using profiled distribution of showerhead apertures 失效
标题翻译：铜的化学气相沉积使用喷头孔的分布分布
公开(公告)号：US06410089B1
公开(公告)日：2002-06-25
申请号：US09513723
申请日：2000-02-24
申请人： Xin Sheng Guo , Keith Koai , Ling Chen , Mohan K. Bhan , Bo Zheng
发明人： Xin Sheng Guo , Keith Koai , Ling Chen , Mohan K. Bhan , Bo Zheng
IPC分类号： C23C1680
CPC分类号： C23C16/45565 , C23C16/455
摘要： A showerhead used for dispensing gas over a wafer in chemical vapor deposition (CVD), especially for CVD of copper in a thermal process using a precursor such as HFAC-Cu-TMVS. The patterns of holes is tailored to compensate for thermal and other effects, in particular by increasing the density of holes toward the periphery of the wafer in three or more zones. Such a variable pattern is particularly useful for liquid precursors that are atomized in a carrier gas, in which case a second perforated plate in back of the showerhead face can be eliminated, thereby reducing the flow impedance and the required pressure of the liquid-entrained gas, which tends to deposit out at higher pressures. The reduced flow impedance is particularly useful for CVD of copper.
摘要翻译：用于在化学气相沉积（CVD）中在晶片上分配气体的喷头，特别是使用诸如HFAC-Cu-TMVS的前体的热处理中的CVD CVD。孔的图案被定制以补偿热和其他效果，特别是通过在三个或更多个区域中增加朝向晶片周边的孔的密度。这种可变图案对于在载气中被雾化的液体前体特别有用，在这种情况下，可以消除喷头表面背面的第二多孔板，从而减少液体夹带气体的流动阻抗和所需的压力，其倾向于在较高压力下沉积。减小的流阻抗对于铜的CVD是特别有用的。

50. 发明授权

US06355106B1 Deposition of copper with increased adhesion 有权
标题翻译：沉积铜增加附着力
公开(公告)号：US06355106B1
公开(公告)日：2002-03-12
申请号：US09706321
申请日：2000-11-03
申请人： Bo Zheng , Ling Chen , Alfred Mak , Mei Chang
发明人： Bo Zheng , Ling Chen , Alfred Mak , Mei Chang
IPC分类号： C23C1600
CPC分类号： C23C16/0281 , C23C16/18
摘要： A method and apparatus for improving the adhesion of a copper layer to an underlying layer on a wafer. The layer of copper is formed over a layer of material on a wafer and the copper layer impacted with ions to improve its adhesion to the underlying layer.
摘要翻译：一种用于改善铜层与晶片上的下层的粘合性的方法和装置。铜层在晶片上的一层材料上形成，并且铜层与离子碰撞以改善其与下层的粘合性。

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