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41. 发明授权

US08057601B2 Apparatus and method for supporting, positioning and rotating a substrate in a processing chamber 有权
标题翻译：用于在处理室中支撑，定位和旋转衬底的装置和方法
公开(公告)号：US08057601B2
公开(公告)日：2011-11-15
申请号：US11746392
申请日：2007-05-09
申请人： Blake Koelmel , Alexander N. Lerner , Joseph M. Ranish , Kedarnath Sangam , Khurshed Sorabji
发明人： Blake Koelmel , Alexander N. Lerner , Joseph M. Ranish , Kedarnath Sangam , Khurshed Sorabji
IPC分类号： C23C16/00
CPC分类号： H01L21/6838 , H01L21/67115
摘要： An apparatus and method for supporting, positioning and rotating a substrate are provided. In one embodiment, a support assembly for supporting a substrate includes an upper base plate and a lower base plate. The substrate is floated on a thin layer of air over the upper base plate. A positioning assembly includes a plurality of air bearing edge rollers or air flow pockets used to position the substrate in a desired orientation inside above the upper base plate. A plurality of slanted apertures or air flow pockets are configured in the upper base plate for flowing gas therethrough to rotate the substrate to ensure uniform heating during processing.
摘要翻译：提供了用于支撑，定位和旋转衬底的装置和方法。在一个实施例中，用于支撑衬底的支撑组件包括上基板和下基板。衬底浮在上层底板上的薄层空气上。定位组件包括多个空气轴承边缘辊或气流袋，其用于将衬底定位在上部基板的上方所期望的取向。多个倾斜的孔或气流袋被配置在上基板中，用于使气体流过其中以旋转基板以确保在加工期间的均匀加热。

42. 发明申请

US20110008740A1 RAPID CONDUCTIVE COOLING USING A SECONDARY PROCESS PLANE 有权
标题翻译：使用二次过程平面快速导电冷却
公开(公告)号：US20110008740A1
公开(公告)日：2011-01-13
申请号：US12887407
申请日：2010-09-21
申请人： Khurshed Sorabji , Alexander N. Lerner
发明人： Khurshed Sorabji , Alexander N. Lerner
IPC分类号： F27B9/12
CPC分类号： H01L21/67098 , C30B31/14 , H01L21/30 , H01L21/67109 , H01L21/67115 , H01L22/10 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for thermally processing a substrate is provided. In one embodiment, a method for thermally treating a substrate is provided. The method includes transferring a substrate to a chamber at a first temperature, the chamber having a heating source and a cooling source disposed in opposing portions of the chamber, heating the substrate in the chamber during a first time period to a second temperature, heating the substrate in the chamber to a third temperature during a second time period, and cooling the substrate in the chamber to a fourth temperature that is substantially equal to the second temperature during the second time period, wherein the second time period is about 2 seconds or less.
摘要翻译：提供了一种用于热处理衬底的方法和装置。在一个实施例中，提供了一种用于热处理衬底的方法。该方法包括在第一温度下将衬底转移到室中，该室具有设置在室的相对部分中的加热源和冷却源，将第一时间段内的衬底加热到第二温度，加热在第二时间段内将腔室中的衬底加热到第三温度，并且将腔室中的衬底冷却到在第二时间段内基本上等于第二温度的第四温度，其中第二时间段约为2秒或更短。

43. 发明申请

US20100273334A1 MILLISECOND ANNEALING (DSA) EDGE PROTECTION 有权
标题翻译： MILLISECOND ANNEALING（DSA）边缘保护
公开(公告)号：US20100273334A1
公开(公告)日：2010-10-28
申请号：US12834620
申请日：2010-07-12
申请人： Blake Koelmel , Robert C. McIntosh , David DL Larmagnac , Alexander N. Lerner , Abhilash J. Mayur , Joseph Yudovsky
发明人： Blake Koelmel , Robert C. McIntosh , David DL Larmagnac , Alexander N. Lerner , Abhilash J. Mayur , Joseph Yudovsky
IPC分类号： H01L21/26
CPC分类号： H01L21/67115 , H01L21/268 , H01L21/68735 , H01L21/68742
摘要： A method and apparatus for thermally processing a substrate is provided. A substrate is disposed within a processing chamber configured for thermal processing by directing electromagnetic energy toward a surface of the substrate. An energy blocker is provided to block at least a portion of the energy directed toward the substrate. The blocker prevents damage to the substrate from thermal stresses as the incident energy approaches an edge of the substrate.
摘要翻译：提供了一种用于热处理衬底的方法和装置。衬底被布置在处理室内，其被配置用于通过将电磁能量引导到衬底的表面进行热处理。提供能量阻挡器以阻挡朝向衬底的能量的至少一部分。当入射能量接近衬底的边缘时，阻挡剂防止由于热应力而损坏衬底。

44. 发明授权

US07812286B2 Rapid conductive cooling using a secondary process plane 有权
标题翻译：使用二次加工平面进行快速导电冷却
公开(公告)号：US07812286B2
公开(公告)日：2010-10-12
申请号：US11925600
申请日：2007-10-26
申请人： Khurshed Sorabji , Alexander N. Lerner
发明人： Khurshed Sorabji , Alexander N. Lerner
IPC分类号： F27B5/14 , F26B19/00
CPC分类号： H01L21/67098 , C30B31/14 , H01L21/30 , H01L21/67109 , H01L21/67115 , H01L22/10 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for thermally processing a substrate is described. The apparatus includes a substrate support configured to move linearly and/or rotationally by a magnetic drive. The substrate support is also configured to receive a radiant heat source to provide heating region in a portion of the chamber. An active cooling region comprising a cooling plate is disposed opposite the heating region. The substrate may move between the two regions to facilitate rapidly controlled heating and cooling of the substrate.
摘要翻译：描述了用于热处理衬底的方法和装置。该装置包括被配置为通过磁驱动线性地和/或旋转移动的基板支撑件。衬底支撑件还被配置为接收辐射热源以在腔室的一部分中提供加热区域。包括冷却板的主动冷却区域设置在加热区域的对面。衬底可以在两个区域之间移动，以便于快速控制衬底的加热和冷却。

45. 发明申请

US20100133257A1 Rapid Thermal Processing Chamber With Micro-Positioning System 有权
标题翻译：具有微定位系统的快速热处理室
公开(公告)号：US20100133257A1
公开(公告)日：2010-06-03
申请号：US12611958
申请日：2009-11-04
申请人： Khurshed Sorabji , Joseph M. Ranish , Wolfgang Aderhold , Aaron M. Hunger , Blake R. Koelmel , Alexander N. Lerner , Nir Merry
发明人： Khurshed Sorabji , Joseph M. Ranish , Wolfgang Aderhold , Aaron M. Hunger , Blake R. Koelmel , Alexander N. Lerner , Nir Merry
IPC分类号： H05B1/00 , F26B3/30
CPC分类号： H01L21/67259 , C23C16/46 , H01L21/324 , H01L21/67115 , H01L21/68 , H01L21/681 , H01L21/6835 , H01L21/68742
摘要： Methods and apparatus for rapid thermal processing of a planar substrate including axially aligning the substrate with a substrate support or with an empirically determined position are described. The methods and apparatus include a sensor system that determines the relative orientations of the substrate and the substrate support.
摘要翻译：描述了包括将衬底轴向对准衬底支撑件或经验确定的位置的用于快速热处理平面衬底的方法和装置。所述方法和装置包括确定衬底和衬底支撑件的相对取向的传感器系统。

46. 发明申请

US20090241996A1 SINGLE WAFER DRYER AND DRYING METHODS 审中-公开
标题翻译：单辊干燥机和干燥方法
公开(公告)号：US20090241996A1
公开(公告)日：2009-10-01
申请号：US12345642
申请日：2008-12-29
申请人： Younes Achkire , Alexander N. Lerner , Boris I. Govzman , Boris Fishkin , Michael N. Sugarman , Rashid A. Mavliev , Haoquan Fang , Shijian Li , Guy E. Shirazi , Jianshe Tang
发明人： Younes Achkire , Alexander N. Lerner , Boris I. Govzman , Boris Fishkin , Michael N. Sugarman , Rashid A. Mavliev , Haoquan Fang , Shijian Li , Guy E. Shirazi , Jianshe Tang
IPC分类号： B08B3/00
CPC分类号： H01L21/67034 , B08B3/10 , H01L21/67751 , H01L21/681 , H01L21/68764 , Y10S414/139
摘要： In a first aspect, a module is provided that is adapted to process a wafer. The module includes a processing portion having one or more features such as (1) a rotatable wafer support for rotating an input wafer from a first orientation wherein the wafer is in line with a load port to a second orientation wherein the wafer is in line with an unload port; (2) a catcher adapted to contact and travel passively with a wafer as it is unloaded from the processing portion; (3) an enclosed output portion adapted to create a laminar air flow from one side thereof to the other; (4) an output portion having a plurality of wafer receivers; (5) submerged fluid nozzles; and/or (6) drying gas flow deflectors, etc. Other aspects include methods of wafer processing.
摘要翻译：在第一方面，提供一种适于处理晶片的模块。模块包括具有一个或多个特征的处理部分，例如（1）可旋转晶片支撑件，用于从第一取向旋转输入晶片，其中晶片与负载端口对准至第二取向，其中晶片与卸货港（2）捕捉器，其适于在从所述处理部分卸载时与晶片被动接触和行进; （3）适于产生从其一侧到另一侧的层流空气流的封闭输出部分; （4）具有多个晶片接收器的输出部分; （5）浸没式流体喷嘴; 和/或（6）干燥气体导流板等。其它方面包括晶片处理的方法。

47. 发明申请

US20090163042A1 THERMAL REACTOR WITH IMPROVED GAS FLOW DISTRIBUTION 有权
标题翻译：具有改善气体流量分布的热反应器
公开(公告)号：US20090163042A1
公开(公告)日：2009-06-25
申请号：US12339671
申请日：2008-12-19
申请人： Ming-Kuei (Michael) Tseng , Norman Tam , Yoshitaka Yokota , Agus Tjandra , Robert Navasca , Medhran Behdjat , Sundar Ramamurthy , Kedarnath Sangam , Alexander N. Lerner
发明人： Ming-Kuei (Michael) Tseng , Norman Tam , Yoshitaka Yokota , Agus Tjandra , Robert Navasca , Medhran Behdjat , Sundar Ramamurthy , Kedarnath Sangam , Alexander N. Lerner
IPC分类号： H01L21/263 , A61L2/04
CPC分类号： H01L21/67115 , F27D7/06 , H01L21/67017 , H01L21/67098
摘要： Embodiments of the present invention provide apparatus and method for improving gas distribution during thermal processing. One embodiment of the present invention provides an apparatus for processing a substrate comprising a chamber body defining a processing volume, a substrate support disposed in the processing volume, wherein the substrate support is configured to support and rotate the substrate, a gas inlet assembly coupled to an inlet of the chamber body and configured to provide a first gas flow to the processing volume, and an exhaust assembly coupled to an outlet of the chamber body, wherein the gas inlet assembly and the exhaust assembly are disposed on opposite sides of the chamber body, and the exhaust assembly defines an exhaust volume configured to extend the processing volume.
摘要翻译：本发明的实施例提供了用于改善热处理期间气体分布的装置和方法。本发明的一个实施例提供了一种用于处理衬底的装置，其包括限定处理体积的室主体，设置在处理容积中的衬底支撑件，其中衬底支撑件构造成支撑和旋转衬底;气体入口组件，室主体的入口并且被配置为向处理容积提供第一气流，以及联接到室主体的出口的排气组件，其中气体入口组件和排气组件设置在室主体的相对侧上，并且排气组件限定了被配置为延长处理量的排气量。

48. 发明授权

US07520939B2 Integrated bevel clean chamber 失效
标题翻译：集成斜面清洁室
公开(公告)号：US07520939B2
公开(公告)日：2009-04-21
申请号：US10826492
申请日：2004-04-16
申请人： Henry Ho , Lily L. Pang , Anh N. Nguyen , Alexander N. Lerner
发明人： Henry Ho , Lily L. Pang , Anh N. Nguyen , Alexander N. Lerner
IPC分类号： B08B3/00
CPC分类号： H01L21/68 , B08B3/02 , H01L21/67034 , H01L21/67051 , H01L21/6838
摘要： A method and apparatus for cleaning the bevel of a semiconductor substrate. The apparatus generally includes a cell body having upstanding walls and a fluid drain basin, a rotatable vacuum chuck positioned centrally positioned in the fluid drain basin, and at least 3 substrate centering members positioned at equal radial increments around the rotatable vacuum chuck. The substrate centering members include a vertically oriented shaft having a longitudinal axis extending therethrough, a cap member positioned over an upper terminating end of the shaft, a raised central portion formed onto the cap member, the raised central portion having a maximum thickness at a location the coincides with the longitudinal axis, and a substrate centering post positioned on the cap member radially outward of the raised central portion, an upper terminating end of the substrate centering post extending from the cap member to a distance that exceeds the maximum thickness. The apparatus further includes a centering actuation mechanism in communication with the substrate centering posts, and a fluid dispensing arm pivotally connected to the cell body, the fluid dispensing arm being configured to dispense a processing fluid onto a first side of the substrate.
摘要翻译：一种用于清洁半导体衬底的斜面的方法和设备。该装置通常包括具有直立壁的细胞体和流体排放盆，位于流体排放盆中心定位的可旋转真空吸盘，以及围绕可旋转真空吸盘以相等的径向增量定位的至少3个基体定心构件。基板定心构件包括垂直定向的轴，其具有延伸穿过其中的纵向轴线;盖构件，其定位在所述轴的上终端上方;凸起中心部分形成在所述盖构件上，所述凸起中心部分在位置处具有最大厚度与纵向轴线重合，以及定位在凸起中心部分的径向外侧的盖构件上的基板定心柱，该基板定心柱的上终端从盖构件延伸至超过最大厚度的距离。所述装置还包括与所述基板定心柱连通的定心致动机构，以及可枢转地连接到所述电池体的流体分配臂，所述流体分配臂构造成将处理流体分配到所述基板的第一侧上。

49. 发明授权

US07513062B2 Single wafer dryer and drying methods 有权
标题翻译：单片干燥机和干燥方法
公开(公告)号：US07513062B2
公开(公告)日：2009-04-07
申请号：US11054336
申请日：2005-02-09
申请人： Younes Achkire , Alexander N Lerner , Boris Govzman , Boris Fishkin , Michael N Sugarman , Rashid A Mavliev , Haoquan Fang , Shijian Li , Guy E Shirazi , Jianshe Tang
发明人： Younes Achkire , Alexander N Lerner , Boris Govzman , Boris Fishkin , Michael N Sugarman , Rashid A Mavliev , Haoquan Fang , Shijian Li , Guy E Shirazi , Jianshe Tang
IPC分类号： F26B3/00 , B08B3/00
CPC分类号： H01L21/02052 , H01L21/67034
摘要： In a first aspect, a first method of drying a substrate is provided. The first method includes the steps of (1) lifting a substrate through an air/fluid interface at a first rate; (2) directing a drying vapor at the air/fluid interface during lifting of the substrate; and (3) while a portion of the substrate remains in the air/fluid interface, reducing a rate at which a remainder of the substrate is lifted through the air/fluid interface to a second rate. The drying vapor may form an angle of about 23° with the air/fluid interface and/or the second rate may be about 2.5 mm/sec.
摘要翻译：在第一方面中，提供了干燥基板的第一种方法。第一种方法包括以下步骤：（1）以第一速率提升衬底通过空气/流体界面; （2）在提升衬底期间在空气/流体界面处引导干燥蒸汽; 和（3）当衬底的一部分保留在空气/流体界面中时，降低衬底的剩余部分通过空气/流体界面提升到第二速率的速率。干燥蒸气可以与空气/流体界面形成约23°的角度和/或第二速率可以为约2.5mm / sec。

50. 发明申请

US20090045182A1 PULSED LASER ANNEAL SYSTEM ARCHITECTURE 有权
标题翻译：脉冲激光神经系统结构
公开(公告)号：US20090045182A1
公开(公告)日：2009-02-19
申请号：US11839436
申请日：2007-08-15
申请人： ALEXANDER N. LERNER , Timothy N. Thomas , Sundar Ramamurthy
发明人： ALEXANDER N. LERNER , Timothy N. Thomas , Sundar Ramamurthy
IPC分类号： B23K26/42 , B23K26/02
CPC分类号： H01L21/67109 , H01L21/6719 , H01L21/67201 , H01L21/67745 , H01L21/67748
摘要： Embodiments of the present invention provide method and apparatus for annealing semiconductor substrates. One embodiment of the present invention provides a semiconductor processing chamber comprising a first substrate support configured to support a substrate, a second substrate support configured to support a substrate, a shuttle coupled to the first substrate support and configured to move the first substrate support between a processing zone and a first loading zone, wherein the processing zone having a processing volume configured to alternately accommodating the first substrate support and the second substrate support.
摘要翻译：本发明的实施例提供了半导体衬底的退火方法和装置。本发明的一个实施例提供一种半导体处理室，其包括被配置为支撑基板的第一基板支撑件，被配置为支撑基板的第二基板支撑件，耦合到第一基板支撑件的梭子，并被配置成将第一基板支撑件处理区域和第一装载区域，其中所述处理区域具有被配置为交替地容纳所述第一衬底支撑件和所述第二衬底支撑件的处理容积。

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