专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US07520939B2 Integrated bevel clean chamber 失效
标题翻译：集成斜面清洁室
公开(公告)号：US07520939B2
公开(公告)日：2009-04-21
申请号：US10826492
申请日：2004-04-16
申请人： Henry Ho , Lily L. Pang , Anh N. Nguyen , Alexander N. Lerner
发明人： Henry Ho , Lily L. Pang , Anh N. Nguyen , Alexander N. Lerner
IPC分类号： B08B3/00
CPC分类号： H01L21/68 , B08B3/02 , H01L21/67034 , H01L21/67051 , H01L21/6838
摘要： A method and apparatus for cleaning the bevel of a semiconductor substrate. The apparatus generally includes a cell body having upstanding walls and a fluid drain basin, a rotatable vacuum chuck positioned centrally positioned in the fluid drain basin, and at least 3 substrate centering members positioned at equal radial increments around the rotatable vacuum chuck. The substrate centering members include a vertically oriented shaft having a longitudinal axis extending therethrough, a cap member positioned over an upper terminating end of the shaft, a raised central portion formed onto the cap member, the raised central portion having a maximum thickness at a location the coincides with the longitudinal axis, and a substrate centering post positioned on the cap member radially outward of the raised central portion, an upper terminating end of the substrate centering post extending from the cap member to a distance that exceeds the maximum thickness. The apparatus further includes a centering actuation mechanism in communication with the substrate centering posts, and a fluid dispensing arm pivotally connected to the cell body, the fluid dispensing arm being configured to dispense a processing fluid onto a first side of the substrate.
摘要翻译：一种用于清洁半导体衬底的斜面的方法和设备。该装置通常包括具有直立壁的细胞体和流体排放盆，位于流体排放盆中心定位的可旋转真空吸盘，以及围绕可旋转真空吸盘以相等的径向增量定位的至少3个基体定心构件。基板定心构件包括垂直定向的轴，其具有延伸穿过其中的纵向轴线;盖构件，其定位在所述轴的上终端上方;凸起中心部分形成在所述盖构件上，所述凸起中心部分在位置处具有最大厚度与纵向轴线重合，以及定位在凸起中心部分的径向外侧的盖构件上的基板定心柱，该基板定心柱的上终端从盖构件延伸至超过最大厚度的距离。所述装置还包括与所述基板定心柱连通的定心致动机构，以及可枢转地连接到所述电池体的流体分配臂，所述流体分配臂构造成将处理流体分配到所述基板的第一侧上。

2. 发明授权

US07223323B2 Multi-chemistry plating system 失效
标题翻译：多化学电镀系统
公开(公告)号：US07223323B2
公开(公告)日：2007-05-29
申请号：US10616284
申请日：2003-07-08
申请人： Michael X. Yang , Ming Xi , Russell C. Ellwanger , Eric B. Britcher , Bernardo Donoso , Lily L. Pang , Svetlana Sherman , Henry Ho , Anh N. Nguyen , Alexander N. Lerner , Allen L. D'Ambra , Arulkumar Shanmugasundram , Tetsuya Ishikawa , Yevgeniy Rabinovich , Dmitry Lubomirsky , Yeuk-Fai Edwin Mok , Son T. Nguyen
发明人： Michael X. Yang , Ming Xi , Russell C. Ellwanger , Eric B. Britcher , Bernardo Donoso , Lily L. Pang , Svetlana Sherman , Henry Ho , Anh N. Nguyen , Alexander N. Lerner , Allen L. D'Ambra , Arulkumar Shanmugasundram , Tetsuya Ishikawa , Yevgeniy Rabinovich , Dmitry Lubomirsky , Yeuk-Fai Edwin Mok , Son T. Nguyen
IPC分类号： C25B9/12 , C35D3/38 , B08B3/02
CPC分类号： H01L21/6719 , A23D7/00 , A23D7/005 , A23D7/01 , A23J7/00 , B08B3/02 , C25D7/123 , C25D17/001 , C25D17/002 , C25D17/02 , C25D21/02 , C25D21/08 , H01L21/67028 , H01L21/67034 , H01L21/67051 , H01L21/67109 , H01L21/6715 , H01L21/67196 , H01L21/6723 , H01L21/68 , H01L21/6838 , H01L21/68707
摘要： Embodiments of the invention generally provide an electrochemical plating system. The plating system includes a substrate loading station positioned in communication with a mainframe processing platform, at least one substrate plating cell positioned on the mainframe, at least one substrate bevel cleaning cell positioned on the mainframe, and a stacked substrate annealing station positioned in communication with at least one of the mainframe and the loading station, each chamber in the stacked substrate annealing station having a heating plate, a cooling plate, and a substrate transfer robot therein.
摘要翻译：本发明的实施方案通常提供电化学电镀系统。电镀系统包括位于与主机处理平台连通的基板装载站，位于主机上的至少一个基板镀覆单元，位于主机上的至少一个基板斜面清洁单元，以及与主机和加载站中的至少一个，层叠基板退火站中的每个室具有加热板，冷却板和基板传送机器人。

3. 外观设计

USD600566S1 Sheet packaging 有权
标题翻译：片材包装
公开(公告)号：USD600566S1
公开(公告)日：2009-09-22
申请号：US29265035
申请日：2006-08-24
申请人： Henry Ho , Mutsumi Ajichi
设计人： Henry Ho , Mutsumi Ajichi

4. 发明授权

US06652655B1 Method to isolate multi zone heater from atmosphere 失效
标题翻译：从大气隔离多区加热器的方法
公开(公告)号：US06652655B1
公开(公告)日：2003-11-25
申请号：US09611942
申请日：2000-07-07
申请人： Henry Ho
发明人： Henry Ho
IPC分类号： C23C1600
CPC分类号： C23C16/4586 , C23C16/46
摘要： An apparatus for wafer processing that includes a wafer reaction chamber containing a heater within, the heater including an interior volume containing at least one heating element, a fluid inlet port, and a fluid vent port positioned to vent the fluid outside the wafer reaction chamber. Additionally, the interior volume has a seal that isolates it from the wafer reaction chamber.
摘要翻译：一种用于晶片处理的装置，其包括在其内装有加热器的晶片反应室，所述加热器包括内部容积，所述内部容积包含至少一个加热元件，流体入口端口和流体排放口，所述流体出口定位成将晶体反应室外的流体排出。此外，内部容积具有将其与晶片反应室隔离的密封。

5. 发明申请

US20130118405A1 FLUID COOLED SHOWERHEAD WITH POST INJECTION MIXING 审中-公开
标题翻译：流体冷却淋浴器与后注射混合
公开(公告)号：US20130118405A1
公开(公告)日：2013-05-16
申请号：US13337247
申请日：2011-12-26
申请人： Henry Ho , Yong Jiang
发明人： Henry Ho , Yong Jiang
IPC分类号： C23C16/455 , B23P17/04 , B05B7/08
CPC分类号： C23C16/45574 , C23C16/4409 , C23C16/45565 , C23C16/45572 , Y10T29/49826
摘要： A showerhead that injects two process gases into the processing chamber via separate sets of holes. The showerhead is constructed of upper plate and lower plate. Upper plate has a first set of holes. The lower plate has two sets of holes: one set is aligned with the holes in the upper plate, while the second set has no corresponding holes in the upper plate. Both sets of holes in the lower plate are made to have two different diameters: a larger diameter extending from the top surface of the lower plate, while a smaller diameter extends from the bottom surface and meets with the larger diameter. A set of pipes are inserted through the holes in the upper plate and the corresponding holes in the lower plate, and are sealingly brazed to both plates. Cooling channels may be provided in the lower plate.
摘要翻译：喷头，通过单独的孔将两种处理气体注入处理室。淋浴头由上板和下板构成。上板具有第一组孔。下板有两组孔：一组与上板中的孔对齐，而第二组在上板没有对应的孔。下板中的两组孔被制成具有两个不同的直径：从下板的顶表面延伸的较大的直径，而较小的直径从底表面延伸并且满足较大的直径。一组管子插入上板的孔和下板中的相应的孔中，并且密封地钎焊到两个板上。可以在下板中设置冷却通道。

6. 发明授权

US06423949B1 Multi-zone resistive heater 有权
公开(公告)号：US06423949B1
公开(公告)日：2002-07-23
申请号：US09314845
申请日：1999-05-19
申请人： Steven Aihua Chen , Henry Ho , Michael X. Yang , Bruce W. Peuse , Karl Littau , Yu Chang
发明人： Steven Aihua Chen , Henry Ho , Michael X. Yang , Bruce W. Peuse , Karl Littau , Yu Chang
IPC分类号： H05B368
CPC分类号： H01L21/67103
摘要： A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater. A method of controlling the temperature in a reactor comprising providing a resistive heater in a chamber of a reactor, measuring the temperature with at least two temperature sensors, and controlling the temperature in the reactor by regulating a power supply to the first heating element and the second heating element according to the temperature measured by the first temperature sensor and the second temperature sensor.

7. 发明授权

US06646235B2 Multi-zone resistive heater 失效
公开(公告)号：US06646235B2
公开(公告)日：2003-11-11
申请号：US10037151
申请日：2001-10-19
申请人： Steven Aihua Chen , Henry Ho , Michael X. Yang , Bruce W. Peuse , Karl Littau , Yu Chang
发明人： Steven Aihua Chen , Henry Ho , Michael X. Yang , Bruce W. Peuse , Karl Littau , Yu Chang
IPC分类号： H05B368
CPC分类号： H01L21/67103
摘要： A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element. A reactor comprising a chamber, a resistive heater, a first temperature sensor, and a second temperature sensor. A resistive heating system for a chemical vapor deposition apparatus comprising a resistive heater. A method of controlling the temperature in a reactor comprising providing a resistive heater in a chamber of a reactor, measuring the temperature with at least two temperature sensors, and controlling the temperature in the reactor by regulating a power supply to the first heating element and the second heating element according to the temperature measured by the first temperature sensor and the second temperature sensor.

8. 发明授权

US06617553B2 Multi-zone resistive heater 失效
公开(公告)号：US06617553B2
公开(公告)日：2003-09-09
申请号：US10246865
申请日：2002-09-19
申请人： Henry Ho , Anqing Cui , Xiaoxiong Yuan
发明人： Henry Ho , Anqing Cui , Xiaoxiong Yuan
IPC分类号： H05B368
CPC分类号： H01L21/67248 , H01L21/67103 , H01L21/67109
摘要： A heating apparatus including a stage comprising a surface having an area to support a wafer and a body, a shaft coupled to the stage, and a first and a second heating element. The first heating element is disposed within a first plane of the body of the stage. The second heating element is disposed within a second plane of the body of the stage at a greater distance from the surface of the stage than the first heating element, and the second heating element is offset from the first heating element in a plane substantially parallel to at least one of the first plane and the second plane.

9. 发明授权

US06530992B1 Method of forming a film in a chamber and positioning a substitute in a chamber 失效
标题翻译：在室中形成膜并将替代物定位在室中的方法
公开(公告)号：US06530992B1
公开(公告)日：2003-03-11
申请号：US09350632
申请日：1999-07-09
申请人： Michael X. Yang , Henry Ho , Steven A. Chen
发明人： Michael X. Yang , Henry Ho , Steven A. Chen
IPC分类号： C23C1600
CPC分类号： H01L21/67017
摘要： Methods and apparatuses of forming a film on a substrate including introducing a pretreatment material into a processing chamber sufficient to form a film as a portion of an inner surface of the processing chamber to inhibit outgassing from that portion of the chamber, introducing a substrate into the chamber, and forming a film on the substrate.
摘要翻译：在基板上形成膜的方法和装置，包括将预处理材料引入到足以形成膜作为处理室的内表面的一部分的处理室中，以阻止从该室的部分排气，将基板引入到并在衬底上形成膜。

10. 发明授权

US6156079A Window support member for a semiconductor processing system 失效
标题翻译：用于半导体处理系统的窗口支撑构件
公开(公告)号：US6156079A
公开(公告)日：2000-12-05
申请号：US176648
申请日：1998-10-21
申请人： Henry Ho , Yu Chang , Kuo-Chun Wu , Steven A. Chen
发明人： Henry Ho , Yu Chang , Kuo-Chun Wu , Steven A. Chen
IPC分类号： H01L21/00 , H05B3/00 , C23C16/00 , F26B19/00 , F27D11/00 , H01L21/64
CPC分类号： H01L21/67115 , H05B3/0047 , Y10T29/41
摘要： A semiconductor processing system includes a semiconductor processing chamber constructed of a main body, a window support member, and a window. The window support member is located over an opening into the main body. The window is located over the window support component. At least one radiation passage is formed in the window support component. The radiation passage has a first end which is open to the internal dimensions of the main body and a second end, opposing the first end, which terminates against the window.
摘要翻译：半导体处理系统包括由主体，窗户支撑构件和窗构成的半导体处理室。窗口支撑构件位于主体的开口的上方。窗口位于窗口支撑组件的上方。至少一个辐射通道形成在窗户支撑部件中。辐射通道具有对主体的内部尺寸敞开的第一端和与第一端相对的第二端，该第二端终止于窗口。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式