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31. 发明授权

US08696875B2 Self-ionized and inductively-coupled plasma for sputtering and resputtering 有权
标题翻译：用于溅射和再溅射的自电离和电感耦合等离子体
公开(公告)号：US08696875B2
公开(公告)日：2014-04-15
申请号：US10495506
申请日：2002-11-14
申请人： Peijun Ding , Rong Tao , Zheng Xu , Daniel C. Lubben , Suraj Rengarajan , Michael A. Miller , Arvind Sundarrajan , Xianmin Tang , John C. Forster , Jianming Fu , Roderick C. Mosely , Fusen Chen , Praburam Gopalraja
发明人： Peijun Ding , Rong Tao , Zheng Xu , Daniel C. Lubben , Suraj Rengarajan , Michael A. Miller , Arvind Sundarrajan , Xianmin Tang , John C. Forster , Jianming Fu , Roderick C. Mosely , Fusen Chen , Praburam Gopalraja
IPC分类号： C23C14/35
CPC分类号： C23C14/046 , C23C14/345 , C23C14/3457 , C23C14/35 , C23C14/358 , C23C14/564 , C23C14/568 , H01J37/321 , H01J37/3402 , H01J37/3408 , H01J37/3441 , H01J2237/3327 , H01L21/2855 , H01L21/76805 , H01L21/76814 , H01L21/76843 , H01L21/76844 , H01L21/76846 , H01L21/76862 , H01L21/76865 , H01L21/76868 , H01L21/76871 , H01L21/76873 , H01L21/76876 , H01L21/76877 , H01L2221/1089
摘要： A magnetron sputter reactor (410) and its method of use, in which SIP sputtering and ICP sputtering are promoted is disclosed. In another chamber (412) an array of auxiliary magnets positioned along sidewalls (414) of a magnetron sputter reactor on a side towards the wafer from the target is disclosed. The magnetron (436) preferably is a small one having a stronger outer pole (442) of a first polarity surrounding a weaker inner pole (440) of a second polarity all on a yoke (444) and rotates about the axis (438) of the chamber using rotation means (446, 448, 450). The auxiliary magnets (462) preferably have the first polarity to draw the unbalanced magnetic field (460) towards the wafer (424), which is on a pedestal (422) supplied with power (454). Argon (426) is supplied through a valve (428). The target (416) is supplied with power (434).
摘要翻译：公开了一种促进SIP溅射和ICP溅射的磁控溅射反应器（410）及其使用方法。在另一个室（412）中，公开了一种辅助磁体阵列，其沿着磁控溅射反应器的侧面（414）定位，所述磁控溅射反应器在朝向晶片的一侧朝向靶。优选地，磁控管（436）是小的，其具有第一极性的更强的外极（442），其具有围绕轭（444）的第二极性的较弱内极（440），并且围绕轴线（438）旋转所述腔室使用旋转装置（446,448,450）。辅助磁体（462）优选地具有第一极性，以将不平衡磁场（460）朝着被提供电力（454）的基座（422）上的晶片（424）拉出。氩（426）通过阀（428）供应。目标（416）被供电（434）。

32. 发明申请

US20100096273A1 CU SURFACE PLASMA TREATMENT TO IMPROVE GAPFILL WINDOW 失效
标题翻译： CU表面等离子体处理，以改善GAPFILL WINDOW
公开(公告)号：US20100096273A1
公开(公告)日：2010-04-22
申请号：US12256418
申请日：2008-10-22
申请人： Qian Luo , Arvind Sundarrajan , Hua Chung , Xianmin Tang , Jick M. Yu , Murali K. Narasimhan
发明人： Qian Luo , Arvind Sundarrajan , Hua Chung , Xianmin Tang , Jick M. Yu , Murali K. Narasimhan
IPC分类号： H01L21/288
CPC分类号： H01L21/76873 , C25D5/02 , C25D21/12 , H01L21/76843 , H01L21/76856 , H01L21/76862 , H01L21/76864 , H01L21/76877
摘要： A method and apparatus for selectively controlling deposition rate of conductive material during an electroplating process. Dopants are predominantly incorporated into a conductive seed layer on field regions of a substrate prior to filling openings in the field regions by electroplating. A substrate is positioned in one or more processing chambers, and barrier and conductive seed layers formed. A dopant precursor is provided to the chamber and ionized, with or without voltage bias. The dopant predominantly incorporates into the conductive seed layer on the field regions. Electrical conductivity of the conductive seed layer on the field regions is reduced relative to that of the conductive seed layer in the openings, resulting in low initial deposition rate of metal on the field regions during electroplating, and little or no void formation in the metal deposited in the openings.
摘要翻译：一种用于在电镀过程中选择性地控制导电材料的沉积速率的方法和装置。在通过电镀在场区域中填充开口之前，掺杂剂主要被结合到衬底的场区域上的导电种子层中。衬底被定位在一个或多个处理室中，形成阻挡层和导电种子层。在室内提供掺杂剂前体，并且在电压偏置或没有电压偏置的情况下电离。掺杂剂主要并入到场区域上的导电种子层中。导电种子层在场区域的电导率相对于开口中的导电种子层的导电率降低，导致电镀期间金属在场区域上的初始沉积速率较低，并且金属沉积中几乎没有或没有空隙形成在开口。

33. 发明申请

US20090053888A1 Method of depositing a diffusion barrier layer which provides an improved interconnect 审中-公开
标题翻译：沉积扩散阻挡层的方法，其提供改进的互连
公开(公告)号：US20090053888A1
公开(公告)日：2009-02-26
申请号：US12288540
申请日：2008-10-20
申请人： Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John C. Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen E. Chen , Barry L. Chin , Gene Y. Kohara
发明人： Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John C. Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen E. Chen , Barry L. Chin , Gene Y. Kohara
IPC分类号： H01L21/4763 , H01L21/31
CPC分类号： H01L21/02183 , C23C14/0641 , C23C14/165 , C23C14/541 , C23C14/5806 , H01L21/02266 , H01L21/2855 , H01L21/318 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76876
摘要： A method of depositing a duffusion barrier layer with overlying conductive layer or fill which lowers resistivity of a semiconductor device interconnect. The lower resistivity is achieved by inducing the formation of alpha tantalum within a tantalum-comprising barrier layer.
摘要翻译：一种用覆盖的导电层或填充物沉积具有降低半导体器件互连电阻率的渗透阻挡层的方法。通过诱导在含钽隔离层内形成α钽来实现较低的电阻率。

34. 发明申请

US20070241458A1 Metal / metal nitride barrier layer for semiconductor device applications 失效
标题翻译：用于半导体器件应用的金属/金属氮化物阻挡层
公开(公告)号：US20070241458A1
公开(公告)日：2007-10-18
申请号：US11809153
申请日：2007-05-30
申请人： Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen Chen , Barry Chin , Gene Kohara
发明人： Peijun Ding , Zheng Xu , Hong Zhang , Xianmin Tang , Praburam Gopalraja , Suraj Rengarajan , John Forster , Jianming Fu , Tony Chiang , Gongda Yao , Fusen Chen , Barry Chin , Gene Kohara
IPC分类号： H01L23/48
CPC分类号： H01L21/02183 , C23C14/024 , C23C14/046 , C23C14/0641 , C23C14/165 , C23C14/541 , C23C14/5806 , H01L21/022 , H01L21/02266 , H01L21/02271 , H01L21/02362 , H01L21/2855 , H01L21/318 , H01L21/76846 , H01L21/76856 , H01L21/76862 , H01L21/76876 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： A metal/metal nitride barrier layer for semiconductor device applications. The barrier layer is particularly useful in contact vias where high conductivity of the via is important, and a lower resistivity barrier layer provides improved overall via conductivity.
摘要翻译：用于半导体器件应用的金属/金属氮化物阻挡层。阻挡层在通孔的高导电性很重要的接触孔中特别有用，并且较低电阻率的阻挡层提供改进的整体通孔导电性。

35. 发明申请

US20070209925A1 Etch and sidewall selectivity in plasma sputtering 审中-公开
标题翻译：等离子体溅射中的蚀刻和侧壁选择性
公开(公告)号：US20070209925A1
公开(公告)日：2007-09-13
申请号：US11373643
申请日：2006-03-09
申请人： Xianmin Tang , Praburam Gopalraja , Jenn Wang , Jick Yu
发明人： Xianmin Tang , Praburam Gopalraja , Jenn Wang , Jick Yu
IPC分类号： C23C14/32
CPC分类号： C23C14/165 , C23C14/5873 , H01J37/321 , H01J37/3266 , H01J37/3408 , H01J2237/334 , H01L21/2855 , H01L21/32136 , H01L21/76844
摘要： A substrate processing method practiced in a plasma sputter reactor including an RF coil and two or more coaxial electromagnets, at least two of which are wound at different radii. After a barrier layer, for example, of tantalum is sputter deposited into a via hole, the RF coil is powered to cause argon sputter etching of the barrier layer and the current to the electromagnets are adjusted to steer the argon ions, for example to eliminate sidewall asymmetry. For example, the two electromagnets are powered with unequal currents of opposite polarities or a third electromagnet wrapped at a different height is powered. In one embodiment, the steering straightens the trajectories near the wafer edge. In another embodiment, the etching is divided into two steps in which the steering inclines the trajectories at opposite angles. The invention may also be applied to other materials, such as copper.
摘要翻译：在包括RF线圈和两个或更多个同轴电磁体的等离子体溅射反应器中实施的衬底处理方法，其中至少两个以不同的半径缠绕。在阻挡层之后，例如钽被溅射沉积到通孔中，RF线圈被供电以对阻挡层进行氩溅射蚀刻，并且调节到电磁体的电流以引导氩离子，例如以消除侧壁不对称。例如，两个电磁铁由具有相反极性的不相等的电流供电，或者以不同高度包装的第三电磁体被供电。在一个实施例中，转向拉直晶片边缘附近的轨迹。在另一个实施例中，蚀刻被分成两个步骤，其中操纵以相反的角度倾斜轨迹。本发明也可以应用于其它材料，例如铜。

36. 发明申请

US20070059502A1 Integrated process for sputter deposition of a conductive barrier layer, especially an alloy of ruthenium and tantalum, underlying copper or copper alloy seed layer 审中-公开
标题翻译：用于溅射沉积导电阻挡层的集成方法，特别是钌和钽的合金，铜或铜合金种子层下面
公开(公告)号：US20070059502A1
公开(公告)日：2007-03-15
申请号：US11511869
申请日：2006-08-29
申请人： Rongjun Wang , Hua Chung , Xianmin Tang , Jenn Wang , Wei Wang , Yoichiro Tanaka , Jick Yu , Praburam Gopalraja
发明人： Rongjun Wang , Hua Chung , Xianmin Tang , Jenn Wang , Wei Wang , Yoichiro Tanaka , Jick Yu , Praburam Gopalraja
IPC分类号： B32B7/00 , B32B3/00 , C23C16/00 , B05D5/12 , C23C14/00
CPC分类号： C23C14/046 , C23C14/0641 , C23C14/165 , H01L21/2855 , H01L21/76844 , H01L21/76846 , H01L21/76873 , H01L23/485 , H01L23/53238 , H01L2924/0002 , Y10T428/24917 , Y10T428/24926 , H01L2924/00
摘要： A fabrication method and a product for the deposition of a conductive barrier or other liner layer in a vertical electrical interconnect structure. One embodiment includes within a a hole through a dielectric layer a barrier layer of RuTaN, an adhesion layer of RuTa, and a copper seed layer forming a liner for electroplating of copper. The ruthenium content is preferably greater than 50 at % and more preferably at least 80 at % but less than 95 at %. The barrier and adhesion layers may both be sputter deposited. Other platinum-group elements substitute for the ruthenium and other refractory metals substitute for the tantalum. Aluminum alloying into RuTa when annealed presents a moisture barrier. Copper contacts include different alloying fractions of RuTa to shift the work function to the doping type.
摘要翻译：用于在垂直电互连结构中沉积导电屏障或其它衬垫层的制造方法和产品。一个实施方案包括通过电介质层的孔，RuTaN的阻挡层，RuTa的粘附层和形成铜电镀衬垫的铜籽晶层。钌含量优选大于50原子％，更优选至少80原子％但小于95原子％。阻挡层和粘附层可以被溅射沉积。其他铂族元素代替钌和其他难熔金属代替钽。当退火时铝合金化成RuTa呈现防潮层。铜触点包括RuTa的不同合金分数，以将功函数转移到掺杂类型。

37. 发明授权

US08992747B2 Apparatus and method for improved darkspace gap design in RF sputtering chamber 有权
标题翻译：用于在RF溅射室中改善暗区间隙设计的装置和方法
公开(公告)号：US08992747B2
公开(公告)日：2015-03-31
申请号：US12723187
申请日：2010-03-12
申请人： John C. Forster , Xianmin Tang
发明人： John C. Forster , Xianmin Tang
IPC分类号： C23C14/00 , C25B11/00 , C23C14/32 , C23C14/34 , H01J37/34
CPC分类号： H01J37/3491 , B23K1/0008 , B23K31/02 , C23C14/3407 , H01J37/3435 , H01J37/3441 , H01J2237/332 , Y10T29/49826 , Y10T29/49947
摘要： Improved designs of target assemblies and darkspace shields are disclosed. Methods of improving darkspace gap in sputtering chambers and sputtering chambers having an improved darkspace gap are also disclosed. Disclosed is a target assembly having a substantially coplanar backing plate and a target are vertically spaced from the darkspace shield.
摘要翻译：公开了改进的目标组件和暗区屏蔽的设计。还公开了改善暗室间隙的溅射室和溅射室中的暗空隙的改进方法。公开了一种目标组件，其具有基本上共面的背板，并且靶与暗空间屏蔽件垂直间隔开。

38. 发明授权

US08764961B2 Cu surface plasma treatment to improve gapfill window 失效
标题翻译： Cu表面等离子体处理改善填缝窗口
公开(公告)号：US08764961B2
公开(公告)日：2014-07-01
申请号：US12256418
申请日：2008-10-22
申请人： Qian Luo , Arvind Sundarrajan , Hua Chung , Xianmin Tang , Jick M. Yu , Murali K. Narasimhan
发明人： Qian Luo , Arvind Sundarrajan , Hua Chung , Xianmin Tang , Jick M. Yu , Murali K. Narasimhan
IPC分类号： C25D5/34 , C25D7/12
CPC分类号： H01L21/76873 , C25D5/02 , C25D21/12 , H01L21/76843 , H01L21/76856 , H01L21/76862 , H01L21/76864 , H01L21/76877
摘要： A method and apparatus for selectively controlling deposition rate of conductive material during an electroplating process. Dopants are predominantly incorporated into a conductive seed layer on field regions of a substrate prior to filling openings in the field regions by electroplating. A substrate is positioned in one or more processing chambers, and barrier and conductive seed layers formed. A dopant precursor is provided to the chamber and ionized, with or without voltage bias. The dopant predominantly incorporates into the conductive seed layer on the field regions. Electrical conductivity of the conductive seed layer on the field regions is reduced relative to that of the conductive seed layer in the openings, resulting in low initial deposition rate of metal on the field regions during electroplating, and little or no void formation in the metal deposited in the openings.
摘要翻译：一种用于在电镀过程中选择性地控制导电材料的沉积速率的方法和装置。在通过电镀在场区域中填充开口之前，掺杂剂主要被结合到衬底的场区域上的导电种子层中。衬底被定位在一个或多个处理室中，形成阻挡层和导电种子层。在室内提供掺杂剂前体，并且在电压偏置或没有电压偏置的情况下电离。掺杂剂主要并入到场区域上的导电种子层中。导电种子层在场区域的电导率相对于开口中的导电种子层的导电率降低，导致电镀期间金属在场区域上的初始沉积速率较低，并且金属沉积中几乎没有或没有空隙形成在开口。

39. 发明申请

US20130330920A1 METHOD AND APPARATUS FOR SUBSTRATE PRECLEAN WITH HYDROGEN CONTAINING HIGH FREQUENCY RF PLASMA 审中-公开
标题翻译：含氢高压RF等离子体的基板预处理方法及装置
公开(公告)号：US20130330920A1
公开(公告)日：2013-12-12
申请号：US13490059
申请日：2012-06-06
申请人： Guojun Liu , Xianmin Tang , Anantha Subramani , Wei W. Wang
发明人： Guojun Liu , Xianmin Tang , Anantha Subramani , Wei W. Wang
IPC分类号： H01L21/283
CPC分类号： H01L21/76814 , H01L21/02063
摘要： A high-frequency, hydrogen-based radio-frequency (RF) plasma is used to reduce a metal oxide and other contaminant disposed in an aperture that is formed in an ultra-low k dielectric material. Because the frequency of the plasma is at least about 40 MHz and the primary gas in the plasma is hydrogen, metal oxide can be advantageously removed without damaging the dielectric material.
摘要翻译：使用高频，氢基射频（RF）等离子体来减少设置在形成于超低k电介质材料的孔中的金属氧化物和其它污染物。由于等离子体的频率为至少约40MHz，等离子体中的初级气体为氢，所以可以有利地除去金属氧化物而不损坏电介质材料。

40. 发明授权

US08435392B2 Encapsulated sputtering target 有权
标题翻译：封装溅射靶
公开(公告)号：US08435392B2
公开(公告)日：2013-05-07
申请号：US13397184
申请日：2012-02-15
申请人： Lara Hawrylchak , Xianmin Tang , Vijay Parhke , Rongjun Wang
发明人： Lara Hawrylchak , Xianmin Tang , Vijay Parhke , Rongjun Wang
IPC分类号： C23C14/00 , C23C14/06 , C23C14/08 , C23C14/14
CPC分类号： C23C14/3407
摘要： Embodiments of the invention provide encapsulated sputtering targets for physical vapor deposition. In one embodiment, an encapsulated target contains a target layer containing a first metal or an oxide of the first metal disposed over a backing plate, an adhesion interlayer disposed between the target layer and the backing plate, and an encapsulation layer containing a second metal or an oxide of the second metal disposed over the target layer and an annular sidewall of the backing plate. The target layer is encapsulated by the backing plate and the encapsulation layer and the first metal is different than the second metal. In some examples, the first metal is lanthanum or lithium and the target layer contains metallic lanthanum, lanthanum oxide, or metallic lithium. In other examples, the second metal is titanium or aluminum and the encapsulation layer contains metallic titanium, titanium oxide, metallic aluminum, or aluminum oxide.
摘要翻译：本发明的实施例提供用于物理气相沉积的封装溅射靶。在一个实施方案中，包封的靶含有包含设置在背板上的第一金属或第一金属的氧化物的目标层，设置在靶层和背衬板之间的粘合中间层，以及包含第二金属或设置在目标层上的第二金属的氧化物和背板的环形侧壁。目标层被背板封装，并且封装层和第一金属不同于第二金属。在一些实例中，第一金属是镧或锂，靶层含有金属镧，氧化镧或金属锂。在其他实例中，第二金属是钛或铝，并且包封层含有金属钛，氧化钛，金属铝或氧化铝。

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