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1. 发明申请

US20070209925A1 Etch and sidewall selectivity in plasma sputtering 审中-公开
标题翻译：等离子体溅射中的蚀刻和侧壁选择性
公开(公告)号：US20070209925A1
公开(公告)日：2007-09-13
申请号：US11373643
申请日：2006-03-09
申请人： Xianmin Tang , Praburam Gopalraja , Jenn Wang , Jick Yu
发明人： Xianmin Tang , Praburam Gopalraja , Jenn Wang , Jick Yu
IPC分类号： C23C14/32
CPC分类号： C23C14/165 , C23C14/5873 , H01J37/321 , H01J37/3266 , H01J37/3408 , H01J2237/334 , H01L21/2855 , H01L21/32136 , H01L21/76844
摘要： A substrate processing method practiced in a plasma sputter reactor including an RF coil and two or more coaxial electromagnets, at least two of which are wound at different radii. After a barrier layer, for example, of tantalum is sputter deposited into a via hole, the RF coil is powered to cause argon sputter etching of the barrier layer and the current to the electromagnets are adjusted to steer the argon ions, for example to eliminate sidewall asymmetry. For example, the two electromagnets are powered with unequal currents of opposite polarities or a third electromagnet wrapped at a different height is powered. In one embodiment, the steering straightens the trajectories near the wafer edge. In another embodiment, the etching is divided into two steps in which the steering inclines the trajectories at opposite angles. The invention may also be applied to other materials, such as copper.
摘要翻译：在包括RF线圈和两个或更多个同轴电磁体的等离子体溅射反应器中实施的衬底处理方法，其中至少两个以不同的半径缠绕。在阻挡层之后，例如钽被溅射沉积到通孔中，RF线圈被供电以对阻挡层进行氩溅射蚀刻，并且调节到电磁体的电流以引导氩离子，例如以消除侧壁不对称。例如，两个电磁铁由具有相反极性的不相等的电流供电，或者以不同高度包装的第三电磁体被供电。在一个实施例中，转向拉直晶片边缘附近的轨迹。在另一个实施例中，蚀刻被分成两个步骤，其中操纵以相反的角度倾斜轨迹。本发明也可以应用于其它材料，例如铜。

2. 发明申请

US20070059502A1 Integrated process for sputter deposition of a conductive barrier layer, especially an alloy of ruthenium and tantalum, underlying copper or copper alloy seed layer 审中-公开
标题翻译：用于溅射沉积导电阻挡层的集成方法，特别是钌和钽的合金，铜或铜合金种子层下面
公开(公告)号：US20070059502A1
公开(公告)日：2007-03-15
申请号：US11511869
申请日：2006-08-29
申请人： Rongjun Wang , Hua Chung , Xianmin Tang , Jenn Wang , Wei Wang , Yoichiro Tanaka , Jick Yu , Praburam Gopalraja
发明人： Rongjun Wang , Hua Chung , Xianmin Tang , Jenn Wang , Wei Wang , Yoichiro Tanaka , Jick Yu , Praburam Gopalraja
IPC分类号： B32B7/00 , B32B3/00 , C23C16/00 , B05D5/12 , C23C14/00
CPC分类号： C23C14/046 , C23C14/0641 , C23C14/165 , H01L21/2855 , H01L21/76844 , H01L21/76846 , H01L21/76873 , H01L23/485 , H01L23/53238 , H01L2924/0002 , Y10T428/24917 , Y10T428/24926 , H01L2924/00
摘要： A fabrication method and a product for the deposition of a conductive barrier or other liner layer in a vertical electrical interconnect structure. One embodiment includes within a a hole through a dielectric layer a barrier layer of RuTaN, an adhesion layer of RuTa, and a copper seed layer forming a liner for electroplating of copper. The ruthenium content is preferably greater than 50 at % and more preferably at least 80 at % but less than 95 at %. The barrier and adhesion layers may both be sputter deposited. Other platinum-group elements substitute for the ruthenium and other refractory metals substitute for the tantalum. Aluminum alloying into RuTa when annealed presents a moisture barrier. Copper contacts include different alloying fractions of RuTa to shift the work function to the doping type.
摘要翻译：用于在垂直电互连结构中沉积导电屏障或其它衬垫层的制造方法和产品。一个实施方案包括通过电介质层的孔，RuTaN的阻挡层，RuTa的粘附层和形成铜电镀衬垫的铜籽晶层。钌含量优选大于50原子％，更优选至少80原子％但小于95原子％。阻挡层和粘附层可以被溅射沉积。其他铂族元素代替钌和其他难熔金属代替钽。当退火时铝合金化成RuTa呈现防潮层。铜触点包括RuTa的不同合金分数，以将功函数转移到掺杂类型。

3. 发明申请

US20080083610A1 Sputtering Chamber Having Auxiliary Backside Magnet to Improve Etch Uniformity and Magnetron Producing Sustained Self Sputtering of Ruthenium and Tantalum 失效
标题翻译：具有辅助背面磁铁的溅射室，以提高蚀刻均匀性和制造钌和钽的持续自溅射的磁控管
公开(公告)号：US20080083610A1
公开(公告)日：2008-04-10
申请号：US11689720
申请日：2007-03-22
申请人： Xianmin Tang , Hua Chung , Rongjun Wang , Tza-Jing Gung , Praburam Gopalraja , Jick Yu , Hong Yang
发明人： Xianmin Tang , Hua Chung , Rongjun Wang , Tza-Jing Gung , Praburam Gopalraja , Jick Yu , Hong Yang
IPC分类号： C23C14/35
CPC分类号： C23C14/0641 , C23C14/345 , C23C14/35 , H01J37/3408 , H01J37/3455
摘要： A plasma sputter chamber and process for sputtering ruthenium and tantalum at low pressure or with self-sustained sputtering (SSS). The source magnetron is strongly unbalanced and of sufficient size to project the unbalanced magnetic field toward the wafer to increase the ionization probability. Sputter etch uniformity is increased by the use of an auxiliary magnet system rotating with the source magnetron but placed towards the center of rotation. It may be a larger, nearly balanced auxiliary magnetron with an outer polarity matching that of the source magnetron or an array of magnets of that polarity. An integrated process includes a directional deposition of the refractory metal and its nitride, a sputter etch, and a flash deposition.
摘要翻译：一种等离子体溅射室和用于在低压或自持溅射（SSS）下溅射钌和钽的工艺。源极磁控管是非常不平衡的，并且具有足够的尺寸以将不平衡磁场投射到晶片以增加电离概率。通过使用与源磁控管一起旋转但是朝向旋转中心放置的辅助磁体系统来增加溅射蚀刻均匀性。它可以是较大的，几乎平衡的辅助磁控管，其外极性与源极磁控管或该极性的磁体阵列的极性匹配。集成工艺包括难熔金属及其氮化物的定向沉积，溅射蚀刻和闪蒸沉积。

4. 发明申请

US20050189217A1 Method and apparatus for forming a barrier layer on a substrate 审中-公开
公开(公告)号：US20050189217A1
公开(公告)日：2005-09-01
申请号：US11110608
申请日：2005-04-20
申请人： Hong Zhang , Xianmin Tang , Praburam Gopalraja , John Forster , Jick Yu
发明人： Hong Zhang , Xianmin Tang , Praburam Gopalraja , John Forster , Jick Yu
IPC分类号： C23C14/04 , C23C14/06 , C23C14/18 , C23C14/58 , H01L21/285 , H01L21/768 , C23C14/34
CPC分类号： H01L21/76843 , C23C14/046 , C23C14/0641 , C23C14/185 , C23C14/5873 , H01L21/2855 , H01L21/76844 , H01L21/76846 , H01L21/76865
摘要： A first method is provided for forming a barrier layer on a substrate by sputter-depositing a tantalum nitride layer on a substrate having (1) a metal feature formed on the substrate; (2) a dielectric layer formed over the metal feature; and (3) a via formed in the dielectric layer so as to expose the metal feature. The via has side walls and a bottom, and a width of about 0.18 microns or less. The tantalum nitride layer is deposited on the side walls and bottom of the via and on a field region of the dielectric layer; and has a thickness of at least about 200 angstroms on the field region. The first method also includes sputter-depositing a tantalum layer on the substrate, in the same chamber. The tantalum layer having a thickness of less than about 100 angstroms on the field region. Other aspects are provided.

5. 发明申请

US20080190760A1 RESPUTTERED COPPER SEED LAYER 审中-公开
标题翻译：受影响的铜层
公开(公告)号：US20080190760A1
公开(公告)日：2008-08-14
申请号：US11838796
申请日：2007-08-14
申请人： XIANMIN TANG , Arvind Sundarrajan , Daniel Lubben , Qian Luo , Tza-Jing Gung , Anantha Subramani , Hua Chung , Xinyu Fu , Rongjun Wang , Yong Cao , Jick Yu , John Forster , Praburam Gopalraja
发明人： XIANMIN TANG , Arvind Sundarrajan , Daniel Lubben , Qian Luo , Tza-Jing Gung , Anantha Subramani , Hua Chung , Xinyu Fu , Rongjun Wang , Yong Cao , Jick Yu , John Forster , Praburam Gopalraja
IPC分类号： C23C14/32
CPC分类号： C23C14/165 , C23C14/046 , C23C14/358 , C23C14/5826 , C23C14/584 , H01J37/3408 , H01J37/3455 , H01L21/2855 , H01L21/76865 , H01L21/76873 , H01L21/76877
摘要： An integrated copper deposition process, particularly useful for forming a copper seed layer in a narrow via prior to electrochemical plating of copper, including at least one cycle of sputter deposition of copper followed by sputter etching of the deposited copper, preferably performed in a same sputter chamber. The deposition is performed under conditions promoting high copper ionization fractions and strong wafer biasing to draw the copper ions into the via. The etching may be done with argon ions, preferably inductively excited by an RF coil around the chamber, or by copper ions, which may be formed with high target power and intense magnetron or by use of the RF coil. Two or more cycles of deposition/etch may be performed. A final flash deposition may be performed with high copper ionization and low wafer biasing.
摘要翻译：一种集成的铜沉积工艺，特别适用于在铜的电化学电镀之前在窄通孔中形成铜籽晶层，包括至少一个铜的溅射沉积循环，然后溅射蚀刻沉积的铜，优选在相同的溅射房间。沉积在促进高铜离子化分数和强晶片偏置的条件下进行以将铜离子吸入通孔。蚀刻可以用氩离子进行，优选地通过围绕室的RF线圈进行感应激励，或者通过可以用高目标功率和强磁控管形成的铜离子或通过使用RF线圈进行。可以执行两个或更多个沉积/蚀刻循环。最终的闪蒸沉积可以用高铜离子化和低晶片偏压进行。

6. 发明授权

US08557094B2 Sputtering chamber having auxiliary backside magnet to improve etch uniformity and magnetron producing sustained self sputtering of ruthenium and tantalum 失效
标题翻译：具有辅助背面磁体的溅射室以提高蚀刻均匀性，并产生磁控管，从而产生钌和钽的持续自溅射
公开(公告)号：US08557094B2
公开(公告)日：2013-10-15
申请号：US11689720
申请日：2007-03-22
申请人： Xianmin Tang , Hua Chung , Rongjun Wang , Tza-Jing Gung , Praburam Gopalraja , Jick Yu , Hong Yang
发明人： Xianmin Tang , Hua Chung , Rongjun Wang , Tza-Jing Gung , Praburam Gopalraja , Jick Yu , Hong Yang
IPC分类号： C23C14/34
CPC分类号： C23C14/0641 , C23C14/345 , C23C14/35 , H01J37/3408 , H01J37/3455
摘要： A plasma sputter chamber and process for sputtering ruthenium and tantalum at low pressure or with self-sustained sputtering (SSS). The source magnetron is strongly unbalanced and of sufficient size to project the unbalanced magnetic field toward the wafer to increase the ionization probability. Sputter etch uniformity is increased by the use of an auxiliary magnet system rotating with the source magnetron but placed towards the center of rotation. It may be a larger, nearly balanced auxiliary magnetron with an outer polarity matching that of the source magnetron or an array of magnets of that polarity. An integrated process includes a directional deposition of the refractory metal and its nitride, a sputter etch, and a flash deposition.
摘要翻译：一种等离子体溅射室和用于在低压或自持溅射（SSS）下溅射钌和钽的工艺。源极磁控管是非常不平衡的，并且具有足够的尺寸以将不平衡磁场投射到晶片以增加电离概率。通过使用与源磁控管一起旋转但是朝向旋转中心放置的辅助磁体系统来增加溅射蚀刻均匀性。它可以是较大的，几乎平衡的辅助磁控管，其外极性与源极磁控管或该极性的磁体阵列的极性匹配。集成工艺包括难熔金属及其氮化物的定向沉积，溅射蚀刻和闪蒸沉积。

7. 发明申请

US20070051622A1 Simultaneous ion milling and sputter deposition 审中-公开
标题翻译：同时离子研磨和溅射沉积
公开(公告)号：US20070051622A1
公开(公告)日：2007-03-08
申请号：US11218403
申请日：2005-09-02
申请人： Xianmin Tang , Anantha Subramani , Praburam Gopalraja , Jianming Fu , Jick Yu
发明人： Xianmin Tang , Anantha Subramani , Praburam Gopalraja , Jianming Fu , Jick Yu
IPC分类号： C23C14/00
CPC分类号： C23C14/35 , C23C14/3442 , C23C14/345 , H01J37/3056 , H01J37/3408
摘要： A magnetron sputter reactor including an ion beam source producing a linear beam that strikes the wafer center at an angle of less than 35°. The linear beam extends across the wafer perpendicular to the beam but has a much short dimension along the beam propagation axis while the wafer is being rotated. The ion source may be an anode layer source having a plasma loop between an inner magnetic pole and a surrounding outer magnetic pole with anode overlying the loop with a closed-loop aperture. The beams from the opposed sides of the loop are steered together by making the outer pole stronger than the inner pole. The aperture width may be varied to control the emission intensity.
摘要翻译：包括离子束源的磁控溅射反应器，产生以小于35°的角度撞击晶片中心的线性光束。线性光束垂直于光束延伸穿过晶片，但是当晶片正在旋转时沿着光束传播轴线具有很短的尺寸。离子源可以是在内部磁极和周围的外部磁极之间具有等离子体环的阳极层源，阳极覆盖具有闭环孔径的环路。通过使外极比内极更强，从环的相对侧的梁被转向一起。可以改变孔径宽度以控制发射强度。

8. 发明申请

US20050252765A1 Method and apparatus for forming a barrier layer on a substrate 审中-公开
公开(公告)号：US20050252765A1
公开(公告)日：2005-11-17
申请号：US11185214
申请日：2005-07-19
申请人： Hong Zhang , Xianmin Tang , Praburam Gopalraja , John Forster , Jick Yu
发明人： Hong Zhang , Xianmin Tang , Praburam Gopalraja , John Forster , Jick Yu
IPC分类号： C23C14/04 , C23C14/32 , H01L21/285 , H01L21/768
CPC分类号： H01L21/76843 , C23C14/046 , H01L21/2855 , H01L21/76844 , H01L21/76846
摘要： A first method is provided for forming a barrier layer on a substrate by sputter-depositing a tantalum nitride layer on a substrate having (1) a metal feature formed on the substrate; (2) a dielectric layer formed over the metal feature; and (3) a via formed in the dielectric layer so as to expose the metal feature. The via has side walls and a bottom, and a width of about 0.18 microns or less. The tantalum nitride layer is deposited on the side walls and bottom of the via and on a field region of the dielectric layer; and has a thickness of at least about 200 angstroms on the field region. The first method also includes sputter-depositing a tantalum layer on the substrate, in the same chamber. The tantalum layer having a thickness of less than about 100 angstroms on the field region. Other aspects are provided.

9. 发明申请

US20060251872A1 Conductive barrier layer, especially an alloy of ruthenium and tantalum and sputter deposition thereof 审中-公开
标题翻译：导电阻挡层，特别是钌和钽的合金，并进行溅射沉积
公开(公告)号：US20060251872A1
公开(公告)日：2006-11-09
申请号：US11124611
申请日：2005-05-05
申请人： Jenn Wang , Wei Wang , Ronjun Wang , Yoichiro Tanaka , Hua Chung , Hong Zhang , Jick Yu , Praburam Gopalraja , Jianming Fu
发明人： Jenn Wang , Wei Wang , Ronjun Wang , Yoichiro Tanaka , Hua Chung , Hong Zhang , Jick Yu , Praburam Gopalraja , Jianming Fu
IPC分类号： B32B3/00
CPC分类号： B32B15/018 , C23C14/3414 , H01L21/2855 , H01L21/76844 , H01L23/53238 , H01L2924/0002 , Y10T428/24917 , H01L2924/00
摘要： A fabrication method, a product structure, a fabrication method, and a sputtering target for the deposition of a conductive barrier or other liner layer in an interconnect structure. The barrier layer comprises a conductive metal of a refractory noble metal alloy, such as a ruthenium/tantalum alloy, which may be amorphous though it is not required to be so. The barrier layer may be sputtered from a target of similar composition. The barrier and target composition may be chosen from a combination of the refractory metals and the platinum-group metals as well as RuTa. A copper noble seed layer may be formed of an alloy of copper and ruthenium in contact to a barrier layer over the dielectric.
摘要翻译：用于在互连结构中沉积导电屏障或其它衬垫层的制造方法，产品结构，制造方法和溅射靶。阻挡层包括难熔贵金属合金如钌/钽合金的导电金属，其可以是无定形的，尽管不需要这样。阻挡层可以从类似组成的靶溅射。阻挡层和靶组成可以选自难熔金属和铂族金属以及RuTa的组合。铜高贵种子层可以由铜和钌的合金形成，与电介质上的阻挡层接触。

10. 发明授权

US07704887B2 Remote plasma pre-clean with low hydrogen pressure 有权
标题翻译：远程等离子体预清洁，氢气压力低
公开(公告)号：US07704887B2
公开(公告)日：2010-04-27
申请号：US11334803
申请日：2006-01-17
申请人： Xinyu Fu , John Forster , Jick Yu , Ajay Bhatnagar , Praburam Gopalraja
发明人： Xinyu Fu , John Forster , Jick Yu , Ajay Bhatnagar , Praburam Gopalraja
IPC分类号： B08B3/00 , H01L21/302
CPC分类号： H01L21/02063 , G03F7/427 , H01J37/32357 , H01J37/32422 , H01J37/3266 , H01L21/02068 , H01L21/67028 , H01L21/67069 , H01L21/76814
摘要： A plasma cleaning method particularly useful for removing photoresist and oxide residue from a porous low-k dielectric with a high carbon content prior to sputter deposition. A remote plasma source produces a plasma primarily of hydrogen radicals. The hydrogen pressure may be kept relatively low, for example, at 30 milliTorr. Optionally, helium may be added to the processing gas with the hydrogen partial pressure held below 150 milliTorr. Superior results are obtained with 70% helium in 400 milliTorr of hydrogen and helium. Preferably, an ion filter, such as a magnetic filter, removes hydrogen and other ions from the output of the remote plasma source and a supply tube from the remote plasma source includes a removable dielectric liner in combination with dielectric showerhead and manifold liner.
摘要翻译：一种等离子体清洗方法，特别适用于在溅射沉积之前从具有高碳含量的多孔低k电介质中除去光致抗蚀剂和氧化物残留物。远程等离子体源产生主要为氢自由基的等离子体。氢气压力可以保持相对较低，例如在30毫乇。任选地，氦气可以被加到处理气体中，氢分压保持在150毫乇以下。在400毫乇的氢气和氦气中，70％的氦气可获得卓越的结果。优选地，诸如磁性过滤器的离子过滤器从远程等离子体源的输出中除去氢和其它离子，并且来自远程等离子体源的供应管包括与介电喷头和歧管衬套组合的可移除绝缘衬垫。

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