专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明申请

US20060097347A1 Novel slurry for chemical mechanical polishing of metals 审中-公开
标题翻译：用于金属化学机械抛光的新型浆料
公开(公告)号：US20060097347A1
公开(公告)日：2006-05-11
申请号：US11301836
申请日：2005-12-12
申请人： A. Feller , Chris Barns
发明人： A. Feller , Chris Barns
IPC分类号： H01L29/00 , H01L21/461
CPC分类号： H01L21/7684 , C09G1/02 , C09K3/1463 , C23F3/06 , H01L21/3212 , H01L28/65
摘要： A slurry for removing metals, useful in the manufacture of integrated circuits generally, and for the chemical mechanical polishing of noble metals particularly, may be formed by combining periodic acid, an abrasive, and a buffer system, wherein the pH of the slurry is between about 4 to about 8.
摘要翻译：可以通过组合高碘酸，研磨剂和缓冲体系来形成通常用于制造集成电路和用于贵金属的化学机械抛光的金属的浆料，其中浆料的pH在约4至约8。

32. 发明申请

US20050236714A1 Selectively converted inter-layer dielectric 有权
标题翻译：选择性转换的层间电介质
公开(公告)号：US20050236714A1
公开(公告)日：2005-10-27
申请号：US11170322
申请日：2005-06-28
申请人： Jihperng Leu , Grant Kloster , David Gracias , Lee Rockford , Peter Moon , Chris Barns
发明人： Jihperng Leu , Grant Kloster , David Gracias , Lee Rockford , Peter Moon , Chris Barns
IPC分类号： H01L21/312 , H01L21/316 , H01L21/768 , H01L23/48
CPC分类号： H01L21/76835 , H01L21/02126 , H01L21/022 , H01L21/02203 , H01L21/312 , H01L21/3124 , H01L21/31695 , H01L21/76807 , H01L21/7682
摘要： An inter-layer dielectric structure and method of making such structure are disclosed. A composite dielectric layer, initially comprising a porous matrix and a porogen, is formed. Subsequent to other processing treatments, the porogen is decomposed and removed from at least a portion of the porous matrix, leaving voids defined by the porous matrix in areas previously occupied by the porogen. The resultant structure has a desirably low k value as a result of the porosity and materials comprising the porous matrix and porogen. The composite dielectric layer may be used in concert with other dielectric layers of varying porosity, dimensions, and material properties to provide varied mechanical and electrical performance profiles.
摘要翻译：公开了一种层间电介质结构及其制造方法。形成初始包含多孔基质和致孔剂的复合介电层。在其它处理处理之后，致孔剂从多孔基体的至少一部分分解和除去，留下由多孔基质定义的空隙，其中先前由致孔剂占据的区域。所得结构由于孔隙率和包含多孔基质和致孔剂的材料而具有期望的低k值。复合介电层可以与具有不同孔隙率，尺寸和材料性质的其它电介质层一起使用，以提供不同的机械和电气性能轮廓。

33. 发明授权

US06464855B1 Method and apparatus for electrochemical planarization of a workpiece 有权
标题翻译：工件电化学平面化的方法和装置
公开(公告)号：US06464855B1
公开(公告)日：2002-10-15
申请号：US09679473
申请日：2000-10-04
申请人： Saket Chadda , Chris Barns
发明人： Saket Chadda , Chris Barns
IPC分类号： C25F316
CPC分类号： B24B37/046 , B23H5/08 , B24B37/042 , C25F7/00 , H01L21/32125
摘要： An electrochemical planarization apparatus for planarizing a metallized surface on a workpiece includes a platen, a conductive element disposed adjacent the platen and a polishing surface disposed adjacent the conductive element. A workpiece carrier is configured to carry a workpiece and press the workpiece against the polishing surface while causing relative motion between the workpiece and the polishing surface. A voltage source is configured to effect an electric potential difference between the metallized surface on the workpiece and the conductive element so that an electric field is produced between the metallized surface and the conductive element. The apparatus further includes a solution application mechanism configured to supply an electrolytic solution to the polishing surface.
摘要翻译：用于平坦化工件上的金属化表面的电化学平面化装置包括压板，邻近压板设置的导电元件和邻近导电元件设置的抛光表面。工件载体构造成承载工件并将工件压靠在抛光表面上，同时引起工件和抛光表面之间的相对运动。电压源被配置为实现工件上的金属化表面与导电元件之间的电位差，使得在金属化表面和导电元件之间产生电场。该设备还包括一个配置成将电解液供应到抛光表面的溶液施加机构。

34. 发明申请

US20220316851A1 METROLOGY SYSTEM 有权
公开(公告)号：US20220316851A1
公开(公告)日：2022-10-06
申请号：US17848206
申请日：2022-06-23
申请人： Derek Aqui , Mark Baker , Chris Barns , Robert Batten , Shawn Boling , Jared Greco , Garrett Headrick , Clint Vandergiessen
发明人： Derek Aqui , Mark Baker , Chris Barns , Robert Batten , Shawn Boling , Jared Greco , Garrett Headrick , Clint Vandergiessen
IPC分类号： G01B5/00 , G01D11/02 , G01B3/1041 , G01B9/08 , G01B11/00
摘要： Apparatuses, systems and methods associated with a metrology system for high-speed, non-contact coordinate measurements of parts are disclosed herein. In embodiments, the metrology system includes a metrology bridge to be coupled to a measurement assembly. The measurement assembly may include a stage moveable across multiple independent axes. The bridge may include a housing, mounting members coupled to the housing, and a plurality of sensors mounted within the housing. The mounting members may rotatably couple the housing to the measurement assembly. Further, sensor elements of the plurality of sensor devices may be aligned along a length of the housing and may be directed out of the housing.

35. 发明申请

US20050181593A1 SELECTIVELY CONVERTED INTER-LAYER DIELECTRIC 失效
标题翻译：选择性转换层间电介质
公开(公告)号：US20050181593A1
公开(公告)日：2005-08-18
申请号：US10302073
申请日：2002-11-21
申请人： Jihperng Leu , Grant Kloster , David Gracias , Lee Rockford , Peter Moon , Chris Barns
发明人： Jihperng Leu , Grant Kloster , David Gracias , Lee Rockford , Peter Moon , Chris Barns
IPC分类号： H01L21/312 , H01L21/316 , H01L21/768 , H01L21/4763 , H01L21/302 , H01L21/461
CPC分类号： H01L21/76835 , H01L21/02126 , H01L21/022 , H01L21/02203 , H01L21/312 , H01L21/3124 , H01L21/31695 , H01L21/76807 , H01L21/7682
摘要： An inter-layer dielectric structure and method of making such structure are disclosed. A composite dielectric layer, initially comprising a porous matrix and a porogen, is formed. Subsequent to other processing treatments, the porogen is decomposed and removed from at least a portion of the porous matrix, leaving voids defined by the porous matrix in areas previously occupied by the porogen. The resultant structure has a desirably low k value as a result of the porosity and materials comprising the porous matrix and porogen. The composite dielectric layer may be used in concert with other dielectric layers of varying porosity, dimensions, and material properties to provide varied mechanical and electrical performance profiles.
摘要翻译：公开了一种层间电介质结构及其制造方法。形成初始包含多孔基质和致孔剂的复合介电层。在其它处理处理之后，致孔剂从多孔基体的至少一部分分解和除去，留下由多孔基质定义的空隙，其中先前由致孔剂占据的区域。所得结构由于孔隙率和包含多孔基质和致孔剂的材料而具有期望的低k值。复合介电层可以与具有不同孔隙率，尺寸和材料性质的其它电介质层一起使用，以提供不同的机械和电气性能轮廓。

36. 发明申请

US20050070109A1 Novel slurry for chemical mechanical polishing of metals 审中-公开
标题翻译：用于金属化学机械抛光的新型浆料
公开(公告)号：US20050070109A1
公开(公告)日：2005-03-31
申请号：US10676330
申请日：2003-09-30
申请人： A. Feller , Chris Barns
发明人： A. Feller , Chris Barns
IPC分类号： C09G1/02 , C09K3/14 , C23F3/06 , H01L21/02 , H01L21/3105 , H01L21/321 , H01L21/768 , H01L21/302 , H01L21/461
CPC分类号： H01L21/7684 , C09G1/02 , C09K3/1463 , C23F3/06 , H01L21/3212 , H01L28/65
摘要： A slurry for removing metals, useful in the manufacture of integrated circuits generally, and for the chemical mechanical polishing of noble metals particularly, may be formed by combining periodic acid, an abrasive, and a buffer system, wherein the pH of the slurry is between about 4 to about 8.
摘要翻译：可以通过组合高碘酸，研磨剂和缓冲体系来形成通常用于制造集成电路和用于贵金属的化学机械抛光的金属的浆料，其中浆料的pH在约4至约8。

37. 发明申请

US20060141222A1 Introducing nanotubes in trenches and structures formed thereby 失效
标题翻译：在由此形成的沟槽和结构中引入纳米管
公开(公告)号：US20060141222A1
公开(公告)日：2006-06-29
申请号：US11026320
申请日：2004-12-29
申请人： Paul Fischer , Anne Miller , Kenneth Cadien , Chris Barns
发明人： Paul Fischer , Anne Miller , Kenneth Cadien , Chris Barns
IPC分类号： B32B3/00
CPC分类号： B82Y10/00 , B82Y30/00 , H01L51/0012 , H01L51/0048 , H01L51/0052 , Y10S977/72 , Y10T428/24562 , Y10T428/24612 , Y10T428/24744
摘要： Methods of forming a microelectronic structure are described. Embodiments of those methods include providing a substrate comprising at least one opening, and then applying a nanotube slurry comprising at least one nanotube to the substrate, wherein the at least one nanotube is substantially placed within the at least one opening.
摘要翻译：描述形成微电子结构的方法。这些方法的实施方案包括提供包含至少一个开口的基底，然后将包含至少一个纳米管的纳米管浆料施加到所述基底，其中所述至少一个纳米管基本上放置在所述至少一个开口内。

38. 发明申请

US20060134916A1 Poly open polish process 有权
标题翻译：多孔开放抛光工艺
公开(公告)号：US20060134916A1
公开(公告)日：2006-06-22
申请号：US11015151
申请日：2004-12-17
申请人： Matthew Prince , Francis Tambwe , Chris Barns
发明人： Matthew Prince , Francis Tambwe , Chris Barns
IPC分类号： H01L21/8234 , H01L21/461
CPC分类号： H01L21/31053 , H01L29/6659 , H01L29/7833
摘要： A method of fabricating microelectronic structure using at least two material removal steps, such as for in a poly open polish process, is disclosed. In one embodiment, the first removal step may be chemical mechanical polishing (CMP) step utilizing a slurry with high selectivity to an interlevel dielectric layer used relative to an etch stop layer abutting a transistor gate. This allows the first CMP step to stop after contacting the etch stop layer, which results in substantially uniform “within die”, “within wafer”, and “wafer to wafer” topography. The removal step may expose a temporary component, such as a polysilicon gate within the transistor gate structure. Once the polysilicon gate is exposed other processes may be employed to produce a transistor gate having desired properties.
摘要翻译：公开了一种使用至少两种材料去除步骤制造微电子结构的方法，例如在多孔开式抛光工艺中。在一个实施例中，第一去除步骤可以是利用相对于邻接晶体管栅极的蚀刻停止层使用的层间介电层具有高选择性的浆料的化学机械抛光（CMP）步骤。这允许第一CMP步骤在接触蚀刻停止层之后停止，这导致基本上均匀的“在晶片内”，“在晶片内”和“晶片到晶片”形态。去除步骤可以暴露诸如晶体管栅极结构内的多晶硅栅极的临时元件。一旦多晶硅栅极被暴露，可以采用其它工艺来产生具有期望特性的晶体管栅极。

39. 发明申请

US20060099817A1 Novel slurry for chemical mechanical polishing of metals 审中-公开
公开(公告)号：US20060099817A1
公开(公告)日：2006-05-11
申请号：US11301826
申请日：2005-12-12
申请人： A. Feller , Chris Barns
发明人： A. Feller , Chris Barns
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： H01L21/7684 , C09G1/02 , C09K3/1463 , C23F3/06 , H01L21/3212 , H01L28/65
摘要： A slurry for removing metals, useful in the manufacture of integrated circuits generally, and for the chemical mechanical polishing of noble metals particularly, may be formed by combining periodic acid, an abrasive, and a buffer system, wherein the pH of the slurry is between about 4 to about 8.

40. 发明申请

US20050153547A1 Method and apparatus for selective deposition 有权
标题翻译：用于选择性沉积的方法和装置
公开(公告)号：US20050153547A1
公开(公告)日：2005-07-14
申请号：US11011324
申请日：2004-12-13
申请人： Chris Barns
发明人： Chris Barns
IPC分类号： H01L21/768 , H01L21/4763 , H01L21/44
CPC分类号： H01L21/76879
摘要： A method for selectively depositing a source material on a wafer is disclosed. In one embodiment, a wafer is having at least one recessed feature is provided. A top surface of the wafer is then coated with an inhibiting material. Finally, a source material is selectively deposited in the at least one recessed feature, the source material repelled by the inhibiting material. In another embodiment, the inhibiting material is one of a wax, a surfactant or an oil.
摘要翻译：公开了一种用于在晶片上选择性地沉积源材料的方法。在一个实施例中，晶片具有至少一个凹陷特征。然后用抑制材料涂覆晶片的顶表面。最后，源材料被选择性地沉积在至少一个凹陷特征中，源材料被抑制材料排斥。在另一个实施方案中，抑制材料是蜡，表面活性剂或油之一。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式