专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20060124592A1 Chemical mechanical polish slurry 审中-公开
标题翻译：化学机械抛光浆
公开(公告)号：US20060124592A1
公开(公告)日：2006-06-15
申请号：US11009162
申请日：2004-12-09
申请人： Anne Miller , Michael Klug , A. Feller
发明人： Anne Miller , Michael Klug , A. Feller
IPC分类号： C09G1/02 , C09K3/14 , C09K13/00 , H01L21/461 , B44C1/22 , C23F1/00
CPC分类号： C23F3/03 , C09G1/02 , H01L21/3212
摘要： Relatively large oxide particles formed during the CMP process can scratch a conductive material being polished. An interference agent is added the polishing slurry, which results in significant reduction in scratching of the conductive material by interfering with the formation of the large oxide particles. The interference agent may comprise materials such as anionic surfactants or reactive silanol agents.
摘要翻译：在CMP过程中形成的相对较大的氧化物颗粒可能会刮擦被抛光的导电材料。加入干扰剂，抛光浆料，通过干扰大的氧化物颗粒的形成，导致导电材料的划伤显着减少。干扰剂可以包括诸如阴离子表面活性剂或反应性硅烷醇试剂的材料。

2. 发明申请

US20050070109A1 Novel slurry for chemical mechanical polishing of metals 审中-公开
标题翻译：用于金属化学机械抛光的新型浆料
公开(公告)号：US20050070109A1
公开(公告)日：2005-03-31
申请号：US10676330
申请日：2003-09-30
申请人： A. Feller , Chris Barns
发明人： A. Feller , Chris Barns
IPC分类号： C09G1/02 , C09K3/14 , C23F3/06 , H01L21/02 , H01L21/3105 , H01L21/321 , H01L21/768 , H01L21/302 , H01L21/461
CPC分类号： H01L21/7684 , C09G1/02 , C09K3/1463 , C23F3/06 , H01L21/3212 , H01L28/65
摘要： A slurry for removing metals, useful in the manufacture of integrated circuits generally, and for the chemical mechanical polishing of noble metals particularly, may be formed by combining periodic acid, an abrasive, and a buffer system, wherein the pH of the slurry is between about 4 to about 8.
摘要翻译：可以通过组合高碘酸，研磨剂和缓冲体系来形成通常用于制造集成电路和用于贵金属的化学机械抛光的金属的浆料，其中浆料的pH在约4至约8。

3. 发明授权

US06178585B2 Slurries for chemical mechanical polishing 失效
标题翻译：用于化学机械抛光的浆料
公开(公告)号：US06178585B2
公开(公告)日：2001-01-30
申请号：US09505615
申请日：2000-02-16
申请人： Kenneth C. Cadien , Daniel A. Feller
发明人： Kenneth C. Cadien , Daniel A. Feller
IPC分类号： B05C100
CPC分类号： H01L21/76843 , C09G1/02 , C09K3/1463 , H01L21/3212 , H01L21/7684
摘要： Novel slurries for the chemical mechanical polishing of thin films used in integrated circuit manufacturing. A tungsten slurry of the present invention comprises an oxidizing agent, such as potassium ferricyanide, an abrasive such as silica, and has a pH between two and four. The tungsten slurry of the present invention can be used in a chemical mechanical planarization process to polish back a blanket deposited tungsten film to form plugs or vias. The tungsten slurry can also be used to polish copper, tungsten silicide, and titanium nitride. A second slurry, which is a 9:1 dilution of the tungsten slurry is ideal for chemical mechanical polishing of titanium nitride films. A third slurry of the present invention comprises a fluoride salt, an abrasive such as silica and has a pH≦8. The third slurry can be used to polish titanium films.
摘要翻译：用于集成电路制造中使用的薄膜的化学机械抛光的新型浆料。本发明的钨浆料包含氧化剂，例如铁氰化钾，研磨剂如二氧化硅，并且pH在2和4之间。本发明的钨浆料可用于化学机械平面化处理以抛光覆盖沉积的钨膜以形成塞子或通孔。钨浆料也可用于抛光铜，硅化钨和氮化钛。对于氮化钛膜的化学机械抛光，第二种浆料是9：1稀释的钨浆料。本发明的第三浆料包含氟化物盐，研磨剂如二氧化硅，pH <= 8。第三种浆料可用于抛光钛膜。

4. 发明授权

US6046099A Plug or via formation using novel slurries for chemical mechanical polishing 有权
标题翻译：使用新型浆料进行化学机械抛光的插塞或通孔形成
公开(公告)号：US6046099A
公开(公告)日：2000-04-04
申请号：US330236
申请日：1999-06-10
申请人： Kenneth C. Cadien , Daniel A. Feller
发明人： Kenneth C. Cadien , Daniel A. Feller
IPC分类号： C09G1/02 , C09K3/14 , H01L21/321 , H01L21/768 , H01L21/30
CPC分类号： H01L21/76843 , C09G1/02 , C09K3/1463 , H01L21/3212 , H01L21/7684
摘要： Novel slurries for the chemical mechanical polishing of thin films used in integrated circuit manufacturing. A tungsten slurry of the present invention comprises an oxidizing agent, such as potassium ferricyanide, an abrasive such as silica, and has a pH between two and four. The tungsten slurry of the present invention can be used in a chemical mechanical planarization process to polish back a blanket deposited tungsten film to form plugs or vias. The tungsten slurry can also be used to polish copper, tungsten silicide, and titanium nitride. A second slurry, which is a 9:1 dilution of the tungsten slurry is ideal for chemical mechanical polishing of titanium nitride films. A third slurry of the present invention comprises a fluoride salt, an abrasive such as silica and has a pH.ltoreq.8. The third slurry can be used to polish titanium films.
摘要翻译：用于集成电路制造中使用的薄膜的化学机械抛光的新型浆料。本发明的钨浆料包含氧化剂，例如铁氰化钾，研磨剂如二氧化硅，并且pH在2和4之间。本发明的钨浆料可用于化学机械平面化处理以抛光覆盖沉积的钨膜以形成塞子或通孔。钨浆料也可用于抛光铜，硅化钨和氮化钛。对于氮化钛膜的化学机械抛光，第二种浆料是9：1稀释的钨浆料。本发明的第三种浆料包含氟化物盐，研磨剂如二氧化硅，并具有pH = 8。第三种浆料可用于抛光钛膜。

5. 发明授权

US10169456B2 Automatic determination of question in text and determination of candidate responses using data mining 有权
公开(公告)号：US10169456B2
公开(公告)日：2019-01-01
申请号：US13585181
申请日：2012-08-14
申请人： Al Chakra , John A. Feller , Trudy L. Hewitt , Francesco C. Schembari
发明人： Al Chakra , John A. Feller , Trudy L. Hewitt , Francesco C. Schembari
IPC分类号： G06F17/30
摘要： A method, a system and a computer program product provide responses to inquiries residing within text processed by an application. An inquiry is identified within text being processed by the application, and a context of the identified inquiry is determined. One or more available data sources is searched to produce a series of responses to the identified inquiry, and the series of responses is evaluated to rank and determine an accuracy level value for each response. The ranked responses along with associated accuracy levels can be displayed.

6. 发明授权

US09195367B2 Managing active GUI elements remotely 有权
标题翻译：远程管理活动GUI元素
公开(公告)号：US09195367B2
公开(公告)日：2015-11-24
申请号：US13565270
申请日：2012-08-02
申请人： Al Chakra , John A. Feller , Trudy L. Hewitt , Francesco C. Schembari
发明人： Al Chakra , John A. Feller , Trudy L. Hewitt , Francesco C. Schembari
IPC分类号： G06F3/0481 , G06F3/0482
CPC分类号： G06F3/0482 , G06F3/0481
摘要： A method, system or computer usable program product for selectively forwarding activated graphical user interface (GUI) elements from a source system to a remote device for user interaction including configuring the source system for selectively forwarding to the remote device activated GUI elements that are for front of screen display on the source system, receiving user preferences for GUI elements to forward to the remote device, in response to a user request, identifying an activated GUI element for front of screen display on the source system and related information that meets the user preferences, and forwarding only the identified GUI element and related information to the remote device for interaction with the user.
摘要翻译：一种方法，系统或计算机可用的程序产品，用于从源系统选择性地将激活的图形用户界面（GUI）元素转发到用于用户交互的远程设备，包括配置源系统以选择性地转发到远程设备用于前端的激活的GUI元素屏幕显示在源系统上，响应于用户请求，接收GUI元件转发给用户偏好的用户偏好，识别源系统上的屏幕显示前面的激活GUI元素以及满足用户偏好的相关信息，并且仅将所识别的GUI元素和相关信息转发到远程设备以与用户交互。

7. 发明申请

US20110214888A1 DEVICE, SYSTEM AND METHOD OF OPERATING FIRE EXTINGUISHING UNITS 有权
标题翻译：装置，系统和操作灭火单元的方法
公开(公告)号：US20110214888A1
公开(公告)日：2011-09-08
申请号：US12716296
申请日：2010-03-03
申请人： Elan Alchalel , Israel Skitnevsky , Carlos A. Feller
发明人： Elan Alchalel , Israel Skitnevsky , Carlos A. Feller
IPC分类号： A62C35/00 , A62C2/00
CPC分类号： A62C37/36 , A62C37/42
摘要： A system of operating a plurality of fire extinguishing units. The system comprises a plurality of valve control units each set to activate one of the plurality of fire extinguishing units when triggered and to trigger the activation of another of the plurality of fire extinguishing units by another of the plurality of valve control units substantially simultaneously and an actuating element which triggers one of the plurality of valve control units.
摘要翻译：一种操作多个灭火单元的系统。该系统包括多个阀控制单元，每个阀控制单元被设置为当触发时激活多个灭火单元中的一个，并且基本上同时触发多个阀控制单元中的另一个基本上同时激活多个灭火单元中的另一个的另一个，致动元件，其触发多个阀控制单元中的一个。

8. 发明授权

US06375552B1 Slurries for chemical mechanical polishing 失效
标题翻译：用于化学机械抛光的浆料
公开(公告)号：US06375552B1
公开(公告)日：2002-04-23
申请号：US09724723
申请日：2000-11-28
申请人： Kenneth C. Cadien , Daniel A. Feller
发明人： Kenneth C. Cadien , Daniel A. Feller
IPC分类号： B24B100
CPC分类号： H01L21/76843 , C09G1/02 , C09K3/1463 , H01L21/3212 , H01L21/7684
摘要： Novel slurries for the chemical mechanical polishing of thin films used in integrated circuit manufacturing. A tungsten slurry of the present invention comprises an oxidizing agent, such as potassium ferricyanide, an abrasive such as silica, and has a pH between two and four. The tungsten slurry of the present invention can be used in a chemical mechanical planarization process to polish back a blanket deposited tungsten film to form plugs or vias. The tungsten slurry can also be used to polish copper, tungsten silicide, and titanium nitrate. A second slurry, which is a 9:1 dilution of the tungsten slurry is ideal for chemical mechanical polishing of titanium nitride films. A third slurry of the present invention comprises a fluoride salt, an abrasive such as silica an has a pH≦8. The third slurry can be used to polish titanium films.
摘要翻译：用于集成电路制造中使用的薄膜的化学机械抛光的新型浆料。本发明的钨浆料包含氧化剂，例如铁氰化钾，研磨剂如二氧化硅，并且pH在2和4之间。本发明的钨浆料可用于化学机械平面化处理以抛光覆盖沉积的钨膜以形成塞子或通孔。钨浆料也可用于抛光铜，硅化钨和硝酸钛。对于氮化钛膜的化学机械抛光，第二种浆料是9：1稀释的钨浆料。本发明的第三种浆料包括氟化物盐，诸如二氧化硅的研磨剂具有pH <= 8。第三种浆料可用于抛光钛膜。

9. 发明授权

US5516346A Slurries for chemical mechanical polishing 失效
标题翻译：用于化学机械抛光的浆料
公开(公告)号：US5516346A
公开(公告)日：1996-05-14
申请号：US242538
申请日：1994-05-13
申请人： Kenneth C. Cadien , Daniel A. Feller
发明人： Kenneth C. Cadien , Daniel A. Feller
IPC分类号： C09G1/02 , C09K3/14 , H01L21/321 , H01L21/768 , C23F1/44 , B44C1/22
CPC分类号： H01L21/76843 , C09G1/02 , C09K3/1463 , H01L21/3212 , H01L21/7684
摘要： Novel slurries for the chemical mechanical polishing of thin films used in integrated circuit manufacturing. A tungsten slurry of the present invention comprises an oxidizing agent, such as potassium ferricyanide, an abrasive such as silica, and has a pH between two and four. The tungsten slurry of the present invention can be used in a chemical mechanical planarization process to polish back a blanket deposited tungsten film to form plugs or vias. The tungsten slurry can also be used to polish copper, tungsten silicide, and titanium nitride. A second slurry, which is a 9:1 dilution of the tungsten slurry is ideal for chemical mechanical polishing of titanium nitride films. A third slurry of the present invention comprises a fluoride salt, an abrasive such as silica and has a pH.ltoreq.8. The third slurry can be used to polish titanium films.
摘要翻译：用于集成电路制造中使用的薄膜的化学机械抛光的新型浆料。本发明的钨浆料包含氧化剂，例如铁氰化钾，研磨剂如二氧化硅，并且pH在2和4之间。本发明的钨浆料可用于化学机械平面化处理以抛光覆盖沉积的钨膜以形成塞子或通孔。钨浆料也可用于抛光铜，硅化钨和氮化钛。对于氮化钛膜的化学机械抛光，第二种浆料是9：1稀释的钨浆料。本发明的第三种浆料包含氟化物盐，研磨剂如二氧化硅，并具有pH = 8。第三种浆料可用于抛光钛膜。

10. 发明授权

US5098452A Method for controlling the level of solvent vapor in a vessel 失效
标题翻译：用于控制溶剂蒸汽在水槽中的方法
公开(公告)号：US5098452A
公开(公告)日：1992-03-24
申请号：US571724
申请日：1990-08-24
申请人： John A. Feller
发明人： John A. Feller
IPC分类号： D01D5/11 , G05D9/12
CPC分类号： G05D9/12 , D01D5/11
摘要： A method is disclosed for controlling the interfacial level of solvent vapor and overhead gas in a vessel. The solvent vapor level is controlled by means of a displacement body which is suspended from a load cell. The displacement body is partially immersed in the solvent vapor with the remainder being immersed in the overhead gas covering the solvent vapor. The displacement body's apparent weight is measured by the load cell and used to control the rate of solvent vapor removal from the spin-cell thereby maintaining the solvent vapor/overhead gas interface in the spin-cell at a desired level.
摘要翻译：公开了一种用于控制容器中溶剂蒸气和塔顶气体的界面水平的方法。通过从称重传感器悬挂的位移体来控制溶剂蒸气量。位移体部分地浸入溶剂蒸气中，其余部分浸入覆盖溶剂蒸气的塔顶气体中。位移体的表观重量由称重传感器测量并用于控制从旋转池中除去溶剂蒸汽的速率，从而将自旋电池中的溶剂蒸气/塔顶气体界面保持在所需的水平。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式