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31. 发明授权

US4970577A Semiconductor chip module 失效
标题翻译：半导体芯片模块
公开(公告)号：US4970577A
公开(公告)日：1990-11-13
申请号：US337145
申请日：1989-04-12
申请人： Satoru Ogihara , Shunichi Numata , Kunio Miyazaki , Takashi Yokoyama , Ken Takahashi , Tasao Soga , Kazuji Yamada , Hiroichi Shinohara , Hideo Suzuki
发明人： Satoru Ogihara , Shunichi Numata , Kunio Miyazaki , Takashi Yokoyama , Ken Takahashi , Tasao Soga , Kazuji Yamada , Hiroichi Shinohara , Hideo Suzuki
IPC分类号： H01L21/60 , H01L23/12 , H01L23/498 , H01L23/52 , H01L23/64 , H05K1/02 , H05K1/03 , H05K1/14 , H05K3/34 , H05K3/36
CPC分类号： H01L23/642 , H01L23/49827 , H01L23/49833 , H05K1/141 , H01L2224/16 , H01L2224/73253 , H01L2924/01004 , H01L2924/01014 , H01L2924/01019 , H01L2924/0102 , H01L2924/01046 , H01L2924/01079 , H01L2924/15312 , H01L2924/16152 , H05K1/0271 , H05K1/0306 , H05K2201/045 , H05K2201/049 , H05K2201/068 , H05K2201/10318 , H05K2201/10704 , H05K3/3426 , H05K3/368
摘要： A semiconductor chip module includes semiconductor chips each of which has contacts on its entire front face. A multi-layered organic circuit board having a small dielectric constant is provided for mounting the semiconductor chips. Intermediate ceramic substrates having the same thermal expansion coefficient as that of the semiconductor chip, are also provided. Each such intermediate ceramic substrate has contacts on its front and back faces corresponding to those of the semiconductor chip. These contacts are electrically connected directly in a one-to-one relationship. The contacts on the semiconductor chip and the corresponding ones on the front face of the intermediate ceramic substrates are connected by solder. The contacts on the back face of the intermediate ceramic substrate and the corresponding contacts on the front face of the multi-layered ceramic circuit board are connected by respective conductive pins having a predetermined flexibility and rigidity through a predetermined gap therebetween. With this arrangement, the relative displacement due to a thermal expansion difference between the intermediate ceramic substrate and the multi-layered organic circuit board is permitted without causing substantial stress thereon.

32. 发明授权

US4618397A Method of manufacturing semiconductor device having a pressure sensor 失效
标题翻译：具有压力传感器的半导体器件的制造方法
公开(公告)号：US4618397A
公开(公告)日：1986-10-21
申请号：US802431
申请日：1985-11-27
申请人： Isao Shimizu , Kazuji Yamada
发明人： Isao Shimizu , Kazuji Yamada
IPC分类号： G01L9/00 , H01L29/84 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： G01L9/0042 , H01L29/84 , Y10S438/924 , Y10S438/97 , Y10S438/977 , Y10T29/49103
摘要： The present invention relates to a semiconductor device having a semiconductor pressure sensor, which includes a heavily-doped semiconductor layer having a predetermined impurity concentration gradient and formed at the bottom of a diaphragm (membrane portion). Owing to the presence of this semiconductor layer, a flat diaphragm is formed, and a semiconductor pressure sensor of high precision is provided.
摘要翻译：本发明涉及具有半导体压力传感器的半导体器件，其包括具有预定杂质浓度梯度并形成在隔膜（膜部分）底部的重掺杂半导体层。由于存在该半导体层，所以形成平坦的膜片，并提供高精度的半导体压力传感器。

33. 发明授权

US4558238A Pressure transducer using integrated circuit elements 失效
标题翻译：使用集成电路元件的压力传感器
公开(公告)号：US4558238A
公开(公告)日：1985-12-10
申请号：US536870
申请日：1983-09-29
申请人： Kazuji Yamada , Hideo Sato , Yukitaka Kitadate , Kanji Kawakami , Kazuo Kato , Takao Sasayama
发明人： Kazuji Yamada , Hideo Sato , Yukitaka Kitadate , Kanji Kawakami , Kazuo Kato , Takao Sasayama
IPC分类号： G01L9/04 , G01L9/00 , G01L9/06
CPC分类号： G01L9/065 , Y10S323/907
摘要： A pressure transducer comprises a pressure sensor including a bridge connection of gauging resistors formed on a semiconductor substrate, and a power supply connected to the pressure sensor for driving it and basically acting as a constant current source. The power supply includes at least two transistors formed on the semiconductor substrate. One of the transistors provides a collector current which is less in temperature-dependency relative to that of the other transistor, and the other transistor has a collector circuit connected to the pressure sensor and provides a collector current corresponding to a sum of a substantially temperature-dependent current and a substantially temperature-independent current. A ratio of the temperature-dependent current to the temperature-independent current is adjusted by selecting operation characteristics of the two transistors such that a temperature characteristic of the collector current of the other transistor is substantially inversely proportional to a temperature characteristic of the output of the pressure sensor when it is driven with a constant voltage.
摘要翻译：压力传感器包括压力传感器，该压力传感器包括形成在半导体衬底上的测量电阻器的桥连接器，以及连接到压力传感器的电源，用于驱动它并基本上作为恒定电流源。电源包括形成在半导体衬底上的至少两个晶体管。晶体管中的一个提供了相对于另一个晶体管的温度依赖性较小的集电极电流，另一个晶体管具有连接到压力传感器的集电极电路，并且提供对应于基本上温度相关的总和的集电极电流，依赖电流和基本上温度无关的电流。通过选择两个晶体管的工作特性来调节温度依赖电流与独立于温度的电流的比例，使得另一个晶体管的集电极电流的温度特性与输出的温度特性成反比压力传感器用恒定电压驱动时。

34. 发明授权

US4151502A Semiconductor transducer 失效
标题翻译：半导体传感器
公开(公告)号：US4151502A
公开(公告)日：1979-04-24
申请号：US787841
申请日：1977-04-15
申请人： Yasutoshi Kurihara , Tetuo Kosugi , Teruyuki Kagami , Satoshi Shimada , Yasumasa Matsuda , Kazuji Yamada
发明人： Yasutoshi Kurihara , Tetuo Kosugi , Teruyuki Kagami , Satoshi Shimada , Yasumasa Matsuda , Kazuji Yamada
IPC分类号： G01B7/16 , G01L1/22 , G01L9/00 , H01L29/84 , G01B11/16
CPC分类号： G01L1/2293 , G01L9/0002 , H01L29/84 , Y10S73/04 , Y10T29/49103
摘要： A semiconductor transducer comprises a semiconductor strain gauge composed of a mono-crystalline semiconducting material and a strain sensing region formed in a first main surface of the mono-crystalline semiconducting material, and a strain measuring member coupled to the semiconductor strain gauge through an alloy material. An electrical insulating layer is attached to a second main surface of the mono-crystalline semiconducting material which is coupled to the strain measuring member through the alloy material. The insulating layer is extended to a side surface of the mono-crystalline semiconducting material thereby to cover the same side.
摘要翻译：半导体换能器包括由单晶半导体材料构成的半导体应变计和形成在单晶半导体材料的第一主表面中的应变感测区域，以及通过合金材料耦合到半导体应变计的应变测量构件。电绝缘层连接到单晶半导体材料的第二主表面，该第二主表面通过合金材料耦合到应变测量部件。绝缘层延伸到单晶半导体材料的侧表面，从而覆盖同一侧。

35. 发明授权

US06452261B1 Flat semiconductor device and power converter employing the same 失效
标题翻译：平板半导体器件和采用该半导体器件的功率转换器
公开(公告)号：US06452261B1
公开(公告)日：2002-09-17
申请号：US09380645
申请日：1999-09-07
申请人： Hironori Kodama , Masahiro Nagasu , Hirokazu Inoue , Yasuo Osone , Shigeta Ueda , Kazuji Yamada
发明人： Hironori Kodama , Masahiro Nagasu , Hirokazu Inoue , Yasuo Osone , Shigeta Ueda , Kazuji Yamada
IPC分类号： H01L2348
CPC分类号： H01L25/112 , H01L25/072 , H01L2924/0002 , H01L2924/00
摘要： Control electrode wirings which are led out from control electrodes over a number of chips built in a flat package and insulating members which are provided in order to insulate the control electrode wirings from main electrode wirings are also given function of positioning of the respective semiconductor chips in the flat package. Further, a one-piece control electrode wiring net is housed in the common electrodes of the package and the electrodes which are led out from the control electrodes of the respective semiconductor chips are connected to the net to simplify the processing of a large number of gate signal wirings.
摘要翻译：从控制电极引出的内置在平坦封装中的多个芯片的控制电极布线以及为了使控制电极布线与主电极布线绝缘而设置的绝缘构件也具有将各个半导体芯片定位在扁平包装。此外，一体式控制电极布线网被容纳在封装的公共电极中，并且从各个半导体芯片的控制电极引出的电极连接到网以简化大量栅极的处理信号线。

36. 发明授权

US4896930A Optical functional device of an optical waveguide type 失效
标题翻译：光波导型光功能元件
公开(公告)号：US4896930A
公开(公告)日：1990-01-30
申请号：US158706
申请日：1988-02-22
申请人： Shigeki Tsuchitani , Kazuji Yamada
发明人： Shigeki Tsuchitani , Kazuji Yamada
IPC分类号： G02B6/12 , G02F1/01 , G02F1/065 , G02F1/313 , G02F1/35 , G02F1/355 , G02F1/361
CPC分类号： G02F1/065 , G02F1/3138 , G02F1/0147 , G02F1/3137
摘要： The present invention relates to an optical functional device of an optical waveguide type, particularly to an optical waveguide type with an organic nonlinear optical material suitable for the use in the fields of optical communication or optical information processing. In other words, the present invention provides an optical functional device having an organic nonlinear optical material as an optical waveguide embedded into the surface of a substrate and being an organic nonlinear optical material charged into a hollow part which is composed of a channel as a slit provided on the surface of said substrate and a further substrate for covering the upper part of the channel.
摘要翻译：本发明涉及一种光波导型的光功能器件，特别涉及适合于在光通信或光信息处理领域中使用的有机非线性光学材料的光波导型。换句话说，本发明提供一种光学功能元件，其具有嵌入到基板的表面的作为光波导的有机非线性光学材料，并且是装入中空部分的有机非线性光学材料，所述中空部分由通道作为狭缝设置在所述基板的表面上，以及另一基板，用于覆盖通道的上部。

37. 发明授权

US4835595A Optical interconnections for integrated circuits 失效
标题翻译：集成电路的光互连
公开(公告)号：US4835595A
公开(公告)日：1989-05-30
申请号：US100742
申请日：1987-09-24
申请人： Shigeru Oho , Kazuji Yamada , Shigeki Tsuchitani
发明人： Shigeru Oho , Kazuji Yamada , Shigeki Tsuchitani
IPC分类号： H01L27/14 , H01L27/144 , H01L27/15 , H01L31/0216 , H01L31/0232 , H01L31/10 , H01L31/12 , H04B10/00 , H04B10/2507
CPC分类号： H01L31/0232 , H01L27/1443 , H01L31/02164 , H01L2224/48091 , H01L2224/48247 , H01L2924/16152
摘要： An optical interconnection in a semiconductor integrated circuit includes an opaque coating provided on a surface of the integrated circuit chip. The opaque coating has therein an opening which is positioned above a light receiving element incorporated in the chip and is filled with a transparent material layer. The transparent layer may have a lens action and/or a wavelength-selectivity.
摘要翻译：半导体集成电路中的光互连包括设置在集成电路芯片的表面上的不透明涂层。不透明涂层在其中具有开口，该开口位于结合在芯片中的光接收元件上方，并且填充有透明材料层。透明层可具有透镜作用和/或波长选择性。

38. 发明授权

US4802952A Method for manufacturing semiconductor absolute pressure sensor units 失效
标题翻译：制造半导体绝对压力传感器单元的方法
公开(公告)号：US4802952A
公开(公告)日：1989-02-07
申请号：US158750
申请日：1988-02-22
申请人： Shigeyuki Kobori , Kazuji Yamada , Ryoichi Kobayashi , Atsushi Miyazaki , Seikou Suzuki
发明人： Shigeyuki Kobori , Kazuji Yamada , Ryoichi Kobayashi , Atsushi Miyazaki , Seikou Suzuki
IPC分类号： G01L7/00 , G01L9/00 , G01L9/04 , H01L27/20 , H01L29/84 , H01L21/306 , B44C1/22 , C03C15/00 , C23F1/02
CPC分类号： H01L27/20 , G01L9/0042 , H01L29/84 , Y10T29/49103
摘要： A method for manufacturing semiconductor absolute pressure sensor units includes anodically bonding a silicon sensor wafer (10) and a silicon cap wafer (12) with a borosilicate glass layer (32) disposed therebetween so as to surround respective sensor chips on the silicon sensor wafer (10) by introducing a matrix shaped conductive layer (28) in contact with and in alignment with the borosilicate glass layer (32), the matrix shaped conductive layer (28) is used as a negative electrode during anodic bonding operation so that a high bonding strength is obtained and sodium ions contained in the borosilicate glass layer (32) are kept away from bond regions after completing the anodically bonding operation.

39. 发明授权

US4737787A Two-wire communication system 失效
标题翻译：双线通信系统
公开(公告)号：US4737787A
公开(公告)日：1988-04-12
申请号：US919764
申请日：1986-10-16
申请人： Yukio Ito , Kazuji Yamada , Yasushi Shimizu , Shigeyuki Kobori
发明人： Yukio Ito , Kazuji Yamada , Yasushi Shimizu , Shigeyuki Kobori
IPC分类号： H04J99/00 , G08C19/02 , H04B3/50 , H04B3/54 , H04L5/16 , G08C19/16
CPC分类号： G08C19/02 , H04B3/548 , H04L5/16 , H04B2203/5408 , H04B2203/5458 , H04B2203/547
摘要： A two-wire communication system comprising a transmitting unit having constant current characteristics for controlling an output current thereof on the basis of a signal supplied from a sensor, a receiving unit for receiving a control signal to control the sensor, a load resistor and power supply connected in series with the transmitting unit via a two-wire transmission path, and a communication unit so connected in parallel to the load resistor as to convey the output current of the transmitting unit to the process side and control a current from the power supply transmitted onto the transmission path on the basis of information supplied from the process side. With this configuration, a communication system is provided which makes possible replacing process variable transmitters in a conventional analog control system or installing process variable transmitters in a new analog control system, which makes possible remotely setting and adjusting the transmitter function by the communication unit in the above described system, which makes it possible for the control computer to control as far as terminals, and which facilitates digitization of the system.
摘要翻译：一种双线通信系统，包括具有恒定电流特性的发送单元，用于基于从传感器提供的信号来控制其输出电流;接收单元，用于接收控制信号以控制传感器;负载电阻器和电源通过双线传输路径与发射单元串联连接，以及与负载电阻并联连接的通信单元，以将发送单元的输出电流传送到处理侧，并控制来自发送的电源的电流基于从处理侧提供的信息到传输路径上。利用这种配置，提供了一种通信系统，其使得可以在常规模拟控制系统中替换过程变量发射机或在新的模拟控制系统中安装过程变量发射机，这使得可以通过通信单元远程设置和调整发射机功能上述系统，这使得控制计算机可以控制到终端，并且有助于系统的数字化。

40. 发明授权

US4604899A Semiconductor-type pressure transducer 失效
标题翻译：半导体式压力传感器
公开(公告)号：US4604899A
公开(公告)日：1986-08-12
申请号：US597753
申请日：1984-04-06
申请人： Kazuji Yamada , Hideo Sato , Kanji Kawakami , Kazuo Kato , Takao Sasayama
发明人： Kazuji Yamada , Hideo Sato , Kanji Kawakami , Kazuo Kato , Takao Sasayama
IPC分类号： G01R27/02 , G01B7/16 , G01D3/028 , G01L1/22 , G01L9/00 , G01L9/04 , G01L9/06 , G01L19/04
CPC分类号： G01L1/2281 , G01L9/065
摘要： A semiconductor-type pressure transducer is disclosed in which the pressure change is detected as a resistance change by use of a bridge circuit including at least a gauge resistor changing with an external force. Each gauge resistor is made of a PN junction of a semiconductor. The pressure transducer further comprises an amplification factor compensator for cancelling the effect of the temperature change of the gauge resistors making up the bridge circuit on the amplification factor of the amplification circuit for amplifying the output of the bridge circuit.
摘要翻译：公开了一种半导体型压力传感器，其中通过使用至少包括用外力改变的量规电阻器的桥式电路将压力变化检测为电阻变化。每个规格电阻由半导体的PN结制成。压力传感器还包括放大系数补偿器，用于抵消构成桥式电路的量规电阻器的温度变化对放大电路的放大系数的影响，用于放大桥式电路的输出。

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