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    • 6. 发明授权
    • Acoustic wave filter and manufacturing method of the same
    • 声波滤波器及其制造方法相同
    • US07583163B2
    • 2009-09-01
    • US11891368
    • 2007-08-10
    • Yasuo OsoneChiko YoritaYuji ShiraiSeiichi Tomoi
    • Yasuo OsoneChiko YoritaYuji ShiraiSeiichi Tomoi
    • H03H9/00H03H9/205H01L41/08
    • H03H3/04H03H9/564H03H9/589H03H2003/025
    • A technique capable of integrally forming SMR type acoustic wave filters corresponding to multiple bands on the same chip at low cost is provided. In SMR type acoustic wave filters including multiple bandpass filters corresponding to multiple bands formed over the same die (substrate), acoustic multilayer films are formed without or with a minimum number of masks and piezoelectric thin films having different thicknesses for respective bands are collectively formed. For example, after the acoustic multilayer films (low acoustic impedance layers and high acoustic impedance layers) are formed in a deep groove in a terrace paddy field shape over the die in a maskless manner, the piezoelectric thin films are c-axis-oriented and grown, and are polished by CMP method or the like to be adjusted in a thickness for respective bands, and therefore, the SMR type acoustic wave filters for multiple bands are formed over the same chip.
    • 提供了能够以低成本一体地形成对应于同一芯片上的多个频带的SMR型声波滤波器的技术。 在包括对应于形成在同一芯片(基板)上的多个带的多个带通滤波器的SMR型声波滤波器中,形成声学多层膜,而不需要最少数量的掩模,并且共同形成具有不同厚度的压电薄膜。 例如,在以无掩模的方式在模具上形成在平台水田的深槽中的声学多层膜(低声阻抗层和高声阻抗层)之后,压电薄膜是c轴取向的, 并通过CMP方法等进行抛光,以对各个带的厚度进行调整,因此,在同一芯片上形成多个带的SMR型声波滤波器。