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31. 外观设计

USD326273S Heat insulating cylinder for thermal treatment of semiconductor wafers 失效
公开(公告)号：USD326273S
公开(公告)日：1992-05-19
申请号：US301997
申请日：1989-01-25
申请人： Ken Nakao , Seishiro Sato , Wataru Ohkase
设计人： Ken Nakao , Seishiro Sato , Wataru Ohkase

32. 发明授权

US4943235A Heat-treating apparatus 失效
标题翻译：热处理装置
公开(公告)号：US4943235A
公开(公告)日：1990-07-24
申请号：US275966
申请日：1988-11-25
申请人： Ken Nakao , Seishiro Sato , Wataru Ohkase
发明人： Ken Nakao , Seishiro Sato , Wataru Ohkase
IPC分类号： C30B31/00 , C30B33/00 , F27B17/00 , F27D7/06
CPC分类号： F27B17/0025 , C30B31/00 , C30B33/005 , F27D7/06
摘要： A heat-treating apparatus comprises a heat-treating furnace which include a process tube arranged so as to set its longitudinal direction vertically and having inlet and exhaust ports for a reaction gas, a heater arranged around the process tube, a capping member for capping an opening for allowing an heat-treating object to be loaded therethrough, which is formed in the lower end of the process tube, a case for covering a portion between the process tube and the capping member, and an exhaust nozzle, coupled to the the exhaust port formed in the process tube, for introducing the exhaust waste gas to the outside of the heat-treating apparatus. An exhaust nozzle is arranged in the case so as to introduce the waste gas leaking from between the process tube and the capping member to the outside of the heat-treating apparatus, thereby preventing the leaked gas from being diffused around the heat-treating apparatus.
摘要翻译：一种热处理装置，包括：热处理炉，其包括处理管，其布置成使其纵向方向垂直设置，并具有用于反应气体的入口和排出口;围绕所述处理管布置的加热器;封盖构件，形成在处理管的下端的用于使热处理物体通过其加载的开口，用于覆盖处理管和封盖构件之间的部分的壳体，以及与排气连接的排气喷嘴形成在处理管中的端口，用于将排气废气引入热处理设备的外部。排气喷嘴布置在壳体中，以将从处理管和封盖构件之间泄漏的废气引入热处理设备的外部，从而防止泄漏的气体在热处理设备周围扩散。

33. 发明授权

US4938691A Heat-treating apparatus 失效
标题翻译：热处理装置
公开(公告)号：US4938691A
公开(公告)日：1990-07-03
申请号：US272415
申请日：1988-11-17
申请人： Wataru Ohkase , Ken Nakao , Seishiro Sato
发明人： Wataru Ohkase , Ken Nakao , Seishiro Sato
IPC分类号： H01L21/22 , C30B31/10 , H01L21/31
CPC分类号： C30B31/103
摘要： A heat-treating apparatus includes a furnace for heat-treating wafers, installed so as to set its longitudinal direction vertically and having an opening which is formed in its lower end so as to allow a boat having semiconductor wafers mounted thereon to be loaded, a heat-insulating cylinder on which the boat is placed and which is adapted to keep the boat hot, a lifting unit for lifting and loading the boat and the heat-insulating cylinder into the furnace, and for lowering and unloading them from the furnace, a moving unit for pivoting the heat-insulating cylinder and retracting the cylinder from below the boat, and a handler unit for supporting and vertically moving the boat. After the wafers are heat-treated, the boat is moved downward by the lifting unit. The heat-insulating cylinder is retracted from below the boat by the moving unit while the boat is supported by the handler unit. Subsequently, the boat is further lowered by the handler unit so as to completely remove the boat from the furnace.
摘要翻译：一种热处理设备包括一个热处理晶片的炉子，其安装成垂直设置其纵向并具有形成在其下端的开口，以允许其上安装有半导体晶片的船被加载，将船放置在其上并适于保持船体热的绝热筒体，用于将船体和绝热筒体提升和装载到炉中并用于将其从炉子下降和卸载的提升单元，移动单元，用于使绝热筒旋转并且从船下方缩回气缸;以及处理单元，用于支撑和垂直移动船。在对晶片进行热处理之后，船由提升单元向下移动。当船由搬运单元支撑时，绝热筒由移动单元从船的下方缩回。随后，船尾由处理机构进一步下降，从而将船从炉中完全移开。

34. 发明申请

US20150214088A1 PICKUP METHOD AND PICKUP DEVICE 审中-公开
标题翻译：撷取方法和撷取装置
公开(公告)号：US20150214088A1
公开(公告)日：2015-07-30
申请号：US13819033
申请日：2011-06-30
申请人： Ken Nakao , Michikazu Nakamura , Itaru Iida , Muneo Harada
发明人： Ken Nakao , Michikazu Nakamura , Itaru Iida , Muneo Harada
IPC分类号： H01L21/683 , B32B43/00 , H01L21/67 , B25J15/06
CPC分类号： H01L21/6835 , B25J15/0616 , B32B43/006 , H01L21/67011 , H01L21/67132 , H01L21/6836 , H01L21/6838 , H01L2221/68327 , Y10T156/1132 , Y10T156/1933
摘要： Disclosed is a pickup method in which a first suction unit is caused to approach and come into contact with a chip adhered to an adhesive sheet, and a second suction unit which is formed with a concavity on a contact surface configured to come into contact with the adhesive sheet is caused to approach and come into contact with the adhesive sheet in such a manner as to be opposite to the first suction unit. The adhesive sheet is sucked by the second suction unit that is in contact with the adhesive sheet, and a fluid is injected between the adhesive sheet and the chip by an injection unit. As a result, the adhesive sheet is detached from a portion of the chip opposite to the concavity, and in the state where the chip is being sucked by the first suction unit, the first suction unit is caused to be spaced away from the adhesive sheet that is being sucked by the second suction unit. In this manner, the chip is detached and picked up from the adhesive sheet.
摘要翻译：公开了一种拾取方法，其中使第一吸引单元接近并与粘附到粘合片上的芯片接触;以及第二抽吸单元，其形成在接触表面上的与凹部接触的接触表面上的凹部使粘合片以与第一抽吸单元相对的方式接近并与粘合片接触。通过与粘合片接触的第二抽吸单元吸附粘合片，并且通过注射单元将流体注入粘合片和芯片之间。结果，粘合片与芯片的与凹部相反的部分分离，并且在芯片被第一吸引单元吸附的状态下，使第一吸引单元与粘合片隔开其被第二抽吸单元吸入。以这种方式，将芯片从粘合片上分离并拾取。

35. 发明授权

US08470720B2 Film forming apparatus and film forming method 有权
标题翻译：成膜装置及成膜方法
公开(公告)号：US08470720B2
公开(公告)日：2013-06-25
申请号：US12934165
申请日：2009-03-16
申请人： Ken Nakao , Muneo Harada
发明人： Ken Nakao , Muneo Harada
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C14/12 , B05D1/60 , B05D3/0473 , B05D3/0493 , C23C14/243 , H01L21/02126 , H01L21/02312 , H01L21/312
摘要： A wall surface of a film forming container is heated to or above a vaporization temperature of a material monomer, which is used to form an organic film, by using an external heater formed along the wall surface of the film forming container, substrates are heated to a thermal polymerization reaction temperature by using an internal heater that is disposed apart from the external heater and near a substrate-supporting container in which the substrates are received, and the organic film is formed through thermal polymerization occurring on the substrates by supplying the material monomer into the film forming container.
摘要翻译：通过使用沿着成膜容器的壁面形成的外部加热器将成膜容器的壁面加热至或高于用于形成有机膜的材料单体的蒸发温度，将基板加热至通过使用与外部加热器隔离的内部加热器和接收基板的基板支撑容器附近的内部加热器，形成热聚合反应温度，并且通过在基板上进行热聚合而形成有机膜，所述热聚合通过供给材料单体进入成膜容器。

36. 发明授权

US08197600B2 Vaporizer and semiconductor processing system 有权
标题翻译：汽化器和半导体加工系统
公开(公告)号：US08197600B2
公开(公告)日：2012-06-12
申请号：US12076765
申请日：2008-03-21
申请人： Ken Nakao , Hitoshi Kato , Tsuneyuki Okabe , Shigeyuki Okura
发明人： Ken Nakao , Hitoshi Kato , Tsuneyuki Okabe , Shigeyuki Okura
IPC分类号： C23C16/00 , C23C16/448
CPC分类号： C23C16/4486
摘要： A vaporizer for generating a process gas from a liquid material includes a heat-exchange lower block having a hollow internal space and disposed below the spray port of an injector inside the container. A run-up space for the atomized liquid material is defined between the spray port and the heat-exchange lower block, and an annular space continuous to the run-up space is defined between an inner surface of the container and the heat-exchange lower block. An internal heater is disposed in the internal space of the heat-exchange lower block and includes a carbon wire formed of woven bundles of carbon fibers and sealed in a ceramic envelope. The internal heater is configured to heat the atomized liquid material flowing through the annular space to generate the process gas.
摘要翻译：用于从液体材料产生处理气体的蒸发器包括具有中空内部空间并设置在容器内的喷射器的喷雾口下方的热交换下部块。雾化的液体材料的起始空间被限定在喷射口和热交换下部块之间，并且在容器的内表面和热交换器下部之间限定与起动空间连续的环形空间块。内部加热器设置在热交换下部块的内部空间中，并且包括由编织的碳纤维束形成并密封在陶瓷外壳中的碳线。内部加热器被配置为加热流过环形空间的雾化液体材料以产生处理气体。

37. 发明授权

US08167521B2 Substrate transfer apparatus and vertical heat processing apparatus 有权
标题翻译：基板转印装置和立式热处理装置
公开(公告)号：US08167521B2
公开(公告)日：2012-05-01
申请号：US12225920
申请日：2007-04-23
申请人： Ken Nakao , Hitoshi Kato , Junichi Hagihara
发明人： Ken Nakao , Hitoshi Kato , Junichi Hagihara
IPC分类号： H01L21/677
CPC分类号： H01L21/67098 , H01L21/6838 , H01L21/68707
摘要： The present invention restrains, during a transfer of a substrate, a central portion of the substrate from being warped by its own weight, which might be caused by a super-enlargement of a diameter of the substrate. A substrate transfer apparatus 18 includes: a support part 17 which is moved above a substrate w of a large diameter; and an upside grip mechanism 28 disposed on the support part 17, the upside grip mechanism 28 capable of supporting a peripheral portion of the substrate w from above. The support part 17 is provided with a non-contact sucking and holding part 30 having a suction hole 31 and a blow hole 32. The non-contact sucking and holding part 30 sucks and holds the substrate w in a non-contact manner, by blowing a gas onto the central portion of the upper surface of the substrate w and sucking the central portion to form an air layer 50 such that the central portion of the wafer w is not warped.
摘要翻译：本发明在衬底的转移期间抑制衬底的中心部分被自身的重量扭曲，这可能是由于衬底的直径的过度扩大引起的。基板转印装置18包括：支撑部17，其在大直径的基板w上方移动; 以及设置在支撑部17上的上侧夹持机构28，能够从上方支撑基板w的周边部的上侧夹持机构28。支撑部17设置有具有吸入孔31和气孔32的非接触式吸持保持部30.非接触吸引保持部30以非接触的方式吸附并保持基板w，通过将气体吹送到基板w的上表面的中心部分并吸附中心部分以形成空气层50，使得晶片w的中心部分不翘曲。

38. 发明授权

US07336892B2 Reflection plate for semiconductor heat treatment and manufacturing method thereof 失效
标题翻译：半导体热处理用反射板及其制造方法
公开(公告)号：US07336892B2
公开(公告)日：2008-02-26
申请号：US10391583
申请日：2003-03-20
申请人： Kazuhiko Shimanuki , Hiroyuki Honma , Norihiko Saito , Hideyuki Yokoyama , Takanori Saito , Ken Nakao
发明人： Kazuhiko Shimanuki , Hiroyuki Honma , Norihiko Saito , Hideyuki Yokoyama , Takanori Saito , Ken Nakao
IPC分类号： F21V7/00 , G02F1/1335
CPC分类号： H01L21/67115 , H01L21/68757
摘要： It is provided that a reflection plate of semiconductor heat treatment, which is resistant to cracks or deformations by controlling the adsorption of foreign materials and the production of reaction. Said reflection plate 1 for semiconductor heat treatment is composed of a disk-shaped or ring-shaped plate of optically transmissible material and a plate 2 of inorganic material hermetically enclosed in said disk-shaped or ring-shaped plate, in which said plate of inorganic material has at least one side in contact with said plate of optically transmissible material, said at least one side 2a having a surface roughness of Ra 0.1 to 10.0 μm, said at least one side 2a formed grooves 2c therein.
摘要翻译：提供了半导体热处理反射板，其通过控制异物的吸附和反应的产生而耐裂纹或变形。用于半导体热处理的所述反射板1由光学可透射材料的盘形或环形板和密封在所述盘形或环形板上的无机材料板2组成，其中所述无机材料具有至少一侧与光学可透射材料的所述板接触，所述至少一个侧面2a具有Ra 0.1至10.0μm的表面粗糙度，所述至少一个侧面2a在其中形成沟槽2c。

39. 发明授权

US07311520B2 Heat treatment apparatus 有权
标题翻译：热处理设备
公开(公告)号：US07311520B2
公开(公告)日：2007-12-25
申请号：US10528704
申请日：2003-08-29
申请人： Takanori Saito , Kenichi Yamaga , Ken Nakao
发明人： Takanori Saito , Kenichi Yamaga , Ken Nakao
IPC分类号： F27D11/00
CPC分类号： H01L21/67109
摘要： The present invention is a thermal processing unit including: a heating-furnace body whose upper end has an opening; a reaction tube consisting of a single tube contained in the heating-furnace body; a gas-discharging-unit connecting portion formed at an upper portion of the reaction tube, the gas-discharging-unit connecting portion having a narrow diameter; a substrate-to-be-processed supporting member for supporting a substrate to be processed, contained in the heating-furnace body; and a heating unit for heating the substrate to be processed supported by the substrate-to-be-processed supporting member. The heating unit has: a first heating portion arranged around the reaction tube, a second heating portion arranged around the gas-discharging-unit connecting portion, a third heating portion arranged around an upper portion of the reaction tube, a fourth heating portion arranged around a lower portion of the reaction tube, and a fifth heating portion arranged under the substrate-to-be-processed supporting member.
摘要翻译：本发明是一种热处理单元，包括：上端具有开口的加热炉体; 由包含在加热炉体内的单个管构成的反应管; 气体排出单元连接部，形成在反应管的上部，气体排出单元连接部具有窄直径; 用于支撑加热炉体内所包含的待处理基板的待处理基板的支撑部件; 以及加热单元，用于加热由要处理的基板支撑构件支撑的待处理基板。所述加热单元具有：设置在所述反应管周围的第一加热部，配置在所述排气单元连接部周围的第二加热部，配置在所述反应管的上部的第三加热部，反应管的下部，以及配置在被处理基板的支撑部件的下方的第五加热部。

40. 发明授权

US07150628B2 Single-wafer type heat treatment apparatus for semiconductor processing system 失效
标题翻译：用于半导体处理系统的单晶片型热处理装置
公开(公告)号：US07150628B2
公开(公告)日：2006-12-19
申请号：US10529417
申请日：2004-05-26
申请人： Kenichi Yamaga , Ken Nakao
发明人： Kenichi Yamaga , Ken Nakao
IPC分类号： F27D5/00
CPC分类号： H01L21/67109
摘要： A single-substrate heat-processing apparatus (2) for a semiconductor processing system includes a process container (4) configured to accommodate a target substrate (W). A support member (6) is disposed in the process container (4) and configured to support the target substrate (W) substantially in a horizontal state, while a bottom surface of the target substrate is exposed. A heating gas supply section (20) is disposed to generate a heating gas and supply the heating gas toward the bottom surface of the target substrate (W). A distribution member (16) is disposed within a flow passage of the heating gas supplied from the heating gas supply section (20), and configured to improve distribution uniformity of the heating gas onto the bottom surface of the target substrate (W).
摘要翻译：用于半导体处理系统的单衬底加热处理设备（2）包括被配置为容纳目标衬底（W）的处理容器（4）。支撑构件（6）设置在处理容器（4）中，并且构造成在目标基板的底表面露出时基本上以水平状态支撑目标基板（W）。设置加热气体供给部（20），以产生加热气体，并向加热气体的底面（W）供给加热气体。分配构件（16）设置在从加热气体供给部（20）供给的加热气体的流路内，构成为提高加热气体在目标基板（W）的底面上的分布均匀性。

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