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    • 31. 发明申请
    • Method for manufacturing SOI substrate
    • 制造SOI衬底的方法
    • US20080254597A1
    • 2008-10-16
    • US12076923
    • 2008-03-25
    • Shoji AkiyamaYoshihiro KubotaAtsuo ItoMakoto KawaiYuuji TobisakaKoichi Tanaka
    • Shoji AkiyamaYoshihiro KubotaAtsuo ItoMakoto KawaiYuuji TobisakaKoichi Tanaka
    • H01L21/30
    • H01L21/76256H01L27/12
    • A method for manufacturing an SOI substrate superior in film thickness uniformity and resistivity uniformity in a substrate surface of a silicon layer having a film thickness reduced by an etch-back method is provided. After B ions is implanted into a front surface of a single-crystal Si substrate 10 to form a high-concentration boron added p layer 11 having a depth L in the outermost front surface, the single-crystal Si substrate 10 is appressed against a quartz substrate 20 to be bonded at a room temperature. Chemical etching is performed with respect to the single-crystal Si substrate 10 from a back surface thereof to set its thickness to L or below. A heat treatment is carried out with respect to an SOI substrate in a hydrogen containing atmosphere to outwardly diffuse B from the high-concentration boron added p layer 11, thereby acquiring a boron added p layer 12 having a desired resistance value. During this heat treatment, B in an Si crystal is diffused to the outside of the crystal in a state where it is coupled with hydrogen in the atmosphere, and a B concentration in the high-concentration boron added p layer 11 is reduced. In regard to a heat treatment temperature at this time, in view of a softening point of the insulative substrate, an upper limit of the heat treatment temperature is set to 1250° C., and 700° C. is selected as a lower limit of the temperature at which B can be diffused.
    • 提供一种制造SOI衬底的方法,该SOI衬底具有通过蚀刻方法减小的膜厚度的硅层的衬底表面中的膜厚度均匀性和电阻率均匀性优异的SOI衬底。 在将B离子注入到单晶Si衬底10的前表面中以形成在最外表面具有深度L的高浓度硼添加p层11之后,将单晶Si衬底10贴在石英 基板20在室温下结合。 从其背面对单晶硅基板10进行化学蚀刻,将其厚度设定为L以下。 对含氢气氛中的SOI衬底进行热处理,从高浓度硼添加p层11向外扩散B,从而获得具有所需电阻值的添加硼的p层12。 在该热处理中,Si结晶中的B在与大气中的氢相结合的状态下扩散到晶体外部,并且在高浓度硼添加p层11中的B浓度降低。 就此时的热处理温度而言,考虑到绝缘基板的软化点,将热处理温度的上限设定为1250℃,选择700℃为下限值 B可以扩散的温度。
    • 34. 发明申请
    • Substrate and manufacturing method thereof
    • 基板及其制造方法
    • US20070001261A1
    • 2007-01-04
    • US11476231
    • 2006-06-27
    • Koichi Tanaka
    • Koichi Tanaka
    • H01L29/00
    • H01G4/38H01G4/232H01G4/30H01G4/33H01L28/55H01L28/65
    • A substrate is disclosed that includes a base material, a first capacitor arranged on the base material, and a second capacitor arranged on the base material near the first capacitor. The first capacitor is realized by a lower electrode, a first dielectric layer, and a first upper electrode; and the second capacitor is realized by the lower electrode that is held in common with the first capacitor, a second dielectric layer, and a second upper electrode having a smaller area than the first upper electrode. The first capacitor and the second capacitor are connected in parallel in a case where the capacity of the first capacitor is less than a desired capacity.
    • 公开了一种基板,其包括基体材料,布置在基底材料上的第一电容器和布置在靠近第一电容器的基底材料上的第二电容器。 第一电容器由下电极,第一电介质层和第一上电极实现; 第二电容器由与第一电容器共同保持的下电极,第二电介质层和具有比第一上电极小的面积的第二上电极实现。 在第一电容器的容量小于期望容量的情况下,第一电容器和第二电容器并联连接。