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31. 发明申请

US20100072172A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 审中-公开
标题翻译：基板处理装置和基板处理方法
公开(公告)号：US20100072172A1
公开(公告)日：2010-03-25
申请号：US12562137
申请日：2009-09-18
申请人： Akio Ui , Hisataka Hayashi , Takeshi Kaminatsui , Shinji Himori , Norikazu Yamada , Takeshi Ohse , Jun Abe
发明人： Akio Ui , Hisataka Hayashi , Takeshi Kaminatsui , Shinji Himori , Norikazu Yamada , Takeshi Ohse , Jun Abe
IPC分类号： H01L21/3065 , C23F1/02
CPC分类号： H01L21/67069 , H01J37/32009 , H01J37/32027 , H01J37/32045 , H01J37/32091 , H01J37/321 , H01J37/32137 , H01J37/32532 , H01J2237/3341 , H01L21/3065 , H01L21/31116 , H01L21/31138 , H01L21/32136 , H01L21/67253 , H01L22/14 , H01L22/26
摘要： There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage.
摘要翻译：提供了一种基板处理装置和基板处理方法，其实现有效地降低电极上的基板的电压变化，以减少进入基板的离子的入射能量的变化。基板处理装置包括：第一电极，其在第一电极的主表面上保持基板; 面对所述第一电极的第二电极; RF电源，其向所述第一电极施加频率等于或高于40MHz的RF电压; 以及脉冲电压施加单元，通过将所述脉冲电压叠加在所述RF电压上，向所述第一电极施加按照经过的时间降低的脉冲电压。

32. 发明申请

US20090047795A1 PLASMA PROCESSING APPARATUS, PLASMA PROCESSING METHOD AND STORAGE MEDIUM 审中-公开
标题翻译：等离子体加工设备，等离子体处理方法和储存介质
公开(公告)号：US20090047795A1
公开(公告)日：2009-02-19
申请号：US12192388
申请日：2008-08-15
申请人： Tatsuo MATSUDO , Shinji Himori , Noriaki Imai , Takeshi Ohse , Jun Abe , Takayuki Katsunuma
发明人： Tatsuo MATSUDO , Shinji Himori , Noriaki Imai , Takeshi Ohse , Jun Abe , Takayuki Katsunuma
IPC分类号： H01L21/306 , H01L21/3065 , H01L21/31
CPC分类号： H01L21/3065 , H01J37/32091 , H01J37/32146 , H01J37/32165
摘要： A plasma processing apparatus includes a first radio frequency (RF) power supply unit for applying a first RF power for generating a plasma from a processing gas to at least one of a first and a second electrode which are disposed facing each other in an evacuable processing chamber. The first RF power supply unit is controlled by a control unit so that a first phase at which the first RF power has a first amplitude for generating a plasma and a second phase at which the first RF power has a second amplitude for generating substantially no plasma are alternately repeated at predetermined intervals.
摘要翻译：一种等离子体处理装置包括：第一射频（RF）电源单元，用于将第一和第二电极中的至少一个施加于处理气体中产生等离子体，所述第一和第二电极在排气处理中相互面对地设置; 房间。所述第一RF电源单元由控制单元控制，使得所述第一RF功率具有用于产生等离子体的第一幅度的第一相位和所述第一RF功率具有第二幅度以用于基本上不产生等离子体的第二相位以预定间隔交替重复。

33. 发明申请

US20080073032A1 Stage for plasma processing apparatus, and plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置的阶段和等离子体处理装置
公开(公告)号：US20080073032A1
公开(公告)日：2008-03-27
申请号：US11889338
申请日：2007-08-10
申请人： Akira Koshiishi , Shinji Himori , Shoichiro Matsuyama
发明人： Akira Koshiishi , Shinji Himori , Shoichiro Matsuyama
IPC分类号： H01L21/306
CPC分类号： H01J37/32706 , H01J37/32091
摘要： [Object] To provide a stage for plasma processing apparatus, the stage being capable of improving uniformity of electric field strength in a plasma so as to enhance an in-plane uniformity of a plasma process to a substrate, and to provide a plasma processing apparatus provided with this stage. [Means for Solving the Problem] A stage 1 for a plasma processing apparatus 2 comprises: a conductive member 21 serving as an electrode for generating a plasma or the like; a dielectric layer 22 covering a center part of an upper surface of the conductive member, for making uniform a radiofrequency electric field applied to a plasma through a substrate to be processed (wafer W); and an electrostatic chuck laminated on the dielectric layer 22, the electric chuck having a plurality of electrode films embedded therein, the electrode films being separated apart from each other in a radial direction of the stage to allow passage of a radiofrequency. An outer edge of the dielectric layer 22 is positioned right below or outside an inner edge of at least one separation area 23c of the separated electrode films 23b and 23d. The separated electrode films 23b and 23d are insulated to each other as to a radiofrequency.
摘要翻译：为了提供等离子体处理装置的载物台，能够提高等离子体的电场强度的均匀性，从而提高等离子体处理对基板的面内均匀性，并且提供等离子体处理装置提供这个阶段。解决问题的手段等离子体处理装置2的阶段1包括：作为用于产生等离子体等的电极的导电部件21; 覆盖导电构件的上表面的中心部分的电介质层22，用于使通过待加工基板（晶片W）施加到等离子体的射频电场均匀化; 以及层叠在电介质层22上的静电吸盘，电吸盘具有嵌入其中的多个电极膜，电极膜在载物台的径向上彼此分离，以允许射频通过。电介质层22的外边缘位于分离的电极膜23b和23d的至少一个分离区域23c的内边缘的正下方或外侧。分离的电极膜23b和23d对于射频而彼此绝缘。

34. 发明申请

US20080038162A1 Table for use in plasma processing system and plasma processing system 有权
标题翻译：用于等离子体处理系统和等离子体处理系统的表格
公开(公告)号：US20080038162A1
公开(公告)日：2008-02-14
申请号：US11889340
申请日：2007-08-10
申请人： Akira Koshiishi , Shinji Himori , Shoichiro Matsuyama
发明人： Akira Koshiishi , Shinji Himori , Shoichiro Matsuyama
IPC分类号： B01J19/08
CPC分类号： H01J37/32082 , H01J37/32009 , H01J37/32532
摘要： The present invention provides a table for use in a plasma processing system that makes it possible to obtain a substrate processed with plasma, improved in within-substrate uniformity, and a plasma processing system comprising such a table. A table 2 for use in a plasma processing system 1 comprises an electrically conductive member serving as a lower electrode 21 for plasma formation, a lower dielectric layer 22 (first dielectric layer) formed on the electrically conductive member so that it covers the center of the upper surface of the electrically conductive member, serving to make a high-frequency electric field to be applied to plasma via a substrate uniform, and an upper dielectric layer 24 (second dielectric layer) having a relative dielectric constant of 100 or more, formed on the electrically conductive member so that it is in contact at least with the edge of the substrate, in order to prevent a high-frequency current that has propagated along the electrically conductive member face from leaking to the outside of the substrate (wafer W).
摘要翻译：本发明提供了一种用于等离子体处理系统的表格，其使得可以获得用等离子体处理的基板，改善基板内均匀性，以及包括这种表格的等离子体处理系统。用于等离子体处理系统1的工作台2包括用作等离子体形成的下部电极21的导电部件，形成在导电部件上的下部电介质层22（第一电介质层），使得其覆盖导电构件的上表面，用于使经由衬底均匀地施加到等离子体的高频电场，以及形成有相对介电常数为100以上的上电介质层24（第二电介质层），形成在所述导电构件至少与衬底的边缘接触，以便防止沿着导电构件面传播的高频电流泄漏到衬底（晶片W）的外部。

35. 发明申请

US20070284085A1 Plasma processing apparatus, electrode unit, feeder member and radio frequency feeder rod 审中-公开
公开(公告)号：US20070284085A1
公开(公告)日：2007-12-13
申请号：US11797626
申请日：2007-05-04
申请人： Daisuke Hayashi , Kazuya Nagaseki , Shinji Himori , Atsushi Matsuura , Ryo Nonaka
发明人： Daisuke Hayashi , Kazuya Nagaseki , Shinji Himori , Atsushi Matsuura , Ryo Nonaka
IPC分类号： F28F7/00
CPC分类号： H01J37/32009 , H01J37/32082 , H01J37/32532
摘要： Disclosed herein is a plasma processing apparatus that introduces a process gas into an airtight processing container, that applies a radio frequency power to generate plasma, and that conducts a plasma process to an object to be processed arranged in the processing container. The plasma processing apparatus includes: an electrode unit arranged in the processing container, the electrode unit having an electrode for applying the radio frequency power, and a space portion arranged in the electrode unit, the space portion insulating the electrode and the processing container from each other. The space portion communicates with atmospheric air outside the processing container.

36. 发明申请

US20060081337A1 Capacitive coupling plasma processing apparatus 审中-公开
标题翻译：电容耦合等离子体处理装置
公开(公告)号：US20060081337A1
公开(公告)日：2006-04-20
申请号：US11292368
申请日：2005-12-02
申请人： Shinji Himori , Kimihiro Higuchi , Tatsuo Matsudo , Etsuo Iijima , Hiroharu Ito , Shoichiro Matsuyama , Noriaki Imai , Kazuya Nagaseki
发明人： Shinji Himori , Kimihiro Higuchi , Tatsuo Matsudo , Etsuo Iijima , Hiroharu Ito , Shoichiro Matsuyama , Noriaki Imai , Kazuya Nagaseki
IPC分类号： C23F1/00 , C23C14/00
CPC分类号： H01J37/32091 , H01J2237/2001
摘要： A capacitive coupling plasma processing apparatus includes a process chamber configured to have a vacuum atmosphere, and a process gas supply section configured to supply a process gas into the chamber. In the chamber, a first electrode serving as a cathode electrode, and a second electrode grounded to serve as an anode electrode are disposed opposite each other. An RF power supply is disposed to supply an RF power to the first electrode to form an RF electric field within a plasma generation region between the first and second electrodes, so as to turn the process gas into plasma. The target substrate is supported by a support member between the first and second electrodes such that a process target surface thereof faces the second electrode. The second electrode includes a conductive counter surface facing the first electrode and exposed to the plasma generation region.
摘要翻译：电容耦合等离子体处理装置包括被配置为具有真空气氛的处理室和被配置为将处理气体供应到室中的处理气体供给部。在室中，用作阴极的第一电极和接地以用作阳极的第二电极彼此相对地设置。设置RF电源以向第一电极提供RF功率以在第一和第二电极之间的等离子体产生区域内形成RF电场，以将处理气体转化为等离子体。目标基板由第一和第二电极之间的支撑构件支撑，使得其工艺目标表面面向第二电极。第二电极包括面向第一电极并暴露于等离子体产生区域的导电计数器表面。

37. 发明申请

US20050211383A1 Magnetron plasma-use magnetic field generation device 审中-公开
标题翻译：磁控管等离子体使用磁场发生装置
公开(公告)号：US20050211383A1
公开(公告)日：2005-09-29
申请号：US10525240
申请日：2003-08-21
申请人： Koji Miyata , Kazuyuki Tezuka , Koichi Tateshita , Hiroo Ono , Kazuya Nagaseki , Shinji Himori
发明人： Koji Miyata , Kazuyuki Tezuka , Koichi Tateshita , Hiroo Ono , Kazuya Nagaseki , Shinji Himori
IPC分类号： C23F1/00 , H01J37/32 , H01L21/00 , H01L21/3065 , H01L21/311 , H01L21/3213
CPC分类号： H01L21/31116 , H01J37/32623 , H01J37/3266 , H01J37/32688 , H01L21/31138 , H01L21/32137 , H01L21/67069
摘要： Disclosed is a magnetic field generator for magnetron plasma. The magnetic field generator is provided with a plurality of magnetic segments, and generates a predetermined multi-pole magnetic field around the periphery of a workpiece substrate within a process chamber. The strength of the multi-pole magnetic field is controlled so that the state of the multi-pole magnetic field is matched different plasma processes. Further, the pattern of the multi-pole magnetic field can be changed so as to match different sizes of the substrate.
摘要翻译：公开了一种用于磁控管等离子体的磁场发生器。磁场发生器设置有多个磁段，并且在处理室内的工件衬底的周边周围产生预定的多极磁场。控制多极磁场的强度，使得多极磁场的状态与不同的等离子体处理相匹配。此外，可以改变多极磁场的图案，以便匹配基板的不同尺寸。

38. 发明申请

US20050023254A1 Plasma processing apparatus, electrode unit, feeder member and radio frequency feeder rod 有权
标题翻译：等离子体处理装置，电极单元，馈线构件和射频馈线棒
公开(公告)号：US20050023254A1
公开(公告)日：2005-02-03
申请号：US10927587
申请日：2004-08-27
申请人： Daisuke Hayashi , Kazuya Nagaseki , Shinji Himori , Atsushi Matsuura , Ryo Nonaka
发明人： Daisuke Hayashi , Kazuya Nagaseki , Shinji Himori , Atsushi Matsuura , Ryo Nonaka
IPC分类号： H01J37/32 , B23K10/00
CPC分类号： H01J37/32009 , H01J37/32082 , H01J37/32532
摘要： The present invention relates to a plasma processing apparatus that introduces a process gas into an airtight processing container, that applies a radio frequency power to generate plasma, and that conducts a plasma process to an object to be processed arranged in the processing container. The plasma processing apparatus of the present invention includes: an electrode unit arranged in the processing container, the electrode unit having an electrode for applying the radio frequency power, and a space portion arranged in the electrode unit, the space portion insulating the electrode and the processing container from each other. The space portion is communicated with an atmospheric air outside the processing container.
摘要翻译：等离子体处理装置技术领域本发明涉及一种等离子体处理装置，其将处理气体引入到气密处理容器中，该处理容器应用射频功率以产生等离子体，并且将等离子体处理传送到处理容器中布置的被处理物体。本发明的等离子体处理装置包括：布置在处理容器中的电极单元，具有用于施加射频功率的电极的电极单元和布置在电极单元中的空间部分，绝缘电极和处理容器彼此。空间部分与处理容器外部的大气连通。

39. 发明授权

US10147633B2 Transfer apparatus and plasma processing system 有权
公开(公告)号：US10147633B2
公开(公告)日：2018-12-04
申请号：US13611327
申请日：2012-09-12
申请人： Shinji Himori , Takehiro Kato , Etsuji Ito
发明人： Shinji Himori , Takehiro Kato , Etsuji Ito
IPC分类号： B65G43/00 , B65G47/90 , H01L21/677 , H01L21/687
摘要： A transfer apparatus transfers an object to be transferred onto a case. The transfer apparatus includes a transfer arm, an arm shaft, a plurality of electromagnets, and a control unit. The transfer arm has a pick unit on a front end thereof and extends and retracts in a horizontal direction. The object to be transferred is held on the pick unit. The arm shaft supports the transfer arm. The plurality of electromagnets apply an force in upward direction to the transfer arm by generating a magnetic field in the case. The control unit controls the plurality of electromagnets in such a manner that when the transfer arm extends and retracts in the horizontal direction, the force in upward direction applied to the transfer arm increases as a length from the arm shaft to the front end of the transfer arm increases.

40. 发明授权

US09859146B2 Semiconductor manufacturing device and processing method 有权
公开(公告)号：US09859146B2
公开(公告)日：2018-01-02
申请号：US14238860
申请日：2012-08-13
申请人： Shinji Himori , Yoshiyuki Kobayashi , Takehiro Kato , Etsuji Ito
发明人： Shinji Himori , Yoshiyuki Kobayashi , Takehiro Kato , Etsuji Ito
IPC分类号： H01L21/00 , H01L21/687 , H01L21/306 , H01L21/67
CPC分类号： H01L21/68742 , H01L21/30604 , H01L21/67063
摘要： A semiconductor manufacturing device includes a stage, a plurality of pins, and a driving unit. The stage includes a mounting surface. The mounting surface has a first region for mounting thereon a substrate, and a second region for mounting thereon a focus ring. The second region is provided to surround the first region. A plurality of holes is formed in the stage. The holes extend in a direction that intersects the mounting surface while passing through the boundary between the first region and the second region. The pins are provided in the respective holes. Each of the pins has a first and a second upper end surface. The second upper end surface is provided above the first upper end surface, and is offset towards the first region with respect to the first upper end surface. The driving unit moves the pins up and down in the aforementioned direction.

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