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    • 31. 发明授权
    • Pattern forming process and a photosensitive composition
    • 图案形成工艺和光敏组合物
    • US06190841B1
    • 2001-02-20
    • US09217580
    • 1998-12-21
    • Naoko KiharaSatoshi SaitoToru Ushirogouchi
    • Naoko KiharaSatoshi SaitoToru Ushirogouchi
    • G03C556
    • G03F7/38G03F7/0045G03F7/039
    • The present invention provides a pattern forming process. The process comprises the following steps. (1) A photosensitive material is prepared by coating a photosensitive composition onto the surface of a substrate. The photosensitive composition comprises the following components: (a) an acid generator which generates an acid when irradiated with actinic radiation, and (b) a compound containing carboxyl groups, which can decompose upon decarboxylation. (2) The photosensitive material is subjected to pattern-wise exposure to actinic radiation, thereby allowing the acid generator (a) to generate an acid in the exposed area. (3) The acid generated in the exposed area is neutralized with a basic compound (c). (4) The carboxyl groups in the carboxyl-group-containing compound (b) in the unexposed area are decarboxylated by applying conditions under which the basic compound (c) can catalyze decarboxylation. (5) The photosensitive material, and composition used in the above process are developed. The basic compound (c) can be introduced in advance into the photosensitive material prepared in step (1). By using such a pattern forming process or a photosensitive composition, a pattern can successfully be formed with high reproducibility without being affected by the environment.
    • 本发明提供一种图案形成方法。 该方法包括以下步骤:(1)通过将光敏组合物涂布在基材的表面上来制备感光材料。 光敏组合物包含以下组分:(a)当用光化辐射照射时产生酸的酸产生剂,和(b)含羧基的化合物,其可在脱羧时分解;(2)感光材料经受图案 (3)暴露区域产生的酸用碱性化合物(c)中和;(4)羧基基团(A)在酸性发生剂(a) 通过施用碱性化合物(c)可以催化脱羧作用的条件,在未曝光区域的含羧基化合物(b)中脱羧。(5)显影在上述方法中使用的感光材料和组合物。 基本化合物(c)可以预先引入到步骤(1)中制备的感光材料中。 通过使用这种图案形成方法或光敏组合物,可以以不会受环境影响的方式,以高再现性成功地形成图案。
    • 33. 发明授权
    • Potosensitive composition and method of forming a pattern using the same
    • 波纹组合物和使用其形成图案的方法
    • US5332648A
    • 1994-07-26
    • US813694
    • 1991-12-27
    • Naoko KiharaFumihiko YuasaTohru UshirogouchiTsukasa TadaOsamu SasakiTakuya NaitoSatoshi Saito
    • Naoko KiharaFumihiko YuasaTohru UshirogouchiTsukasa TadaOsamu SasakiTakuya NaitoSatoshi Saito
    • G03F7/004G03F7/039H01L21/027H01L21/30G03C1/73
    • G03F7/0045Y10S430/115Y10S430/116Y10S430/118
    • A photosensitive composition comprising: an acid-decomposable compound having at least one substituent which is decomposed by an acid, forming a product which reacts with alkali solution and forms --COO.sup.- or --SO.sub.3.sup.- ; and a compound which generates an acid when exposed to a chemical radiation. If necessary, the composition further comprises an alkali-soluble polymer. The acid-decomposable compound is one which is represented by the following formula (1), and the alkali-soluble polymer has a softening point of 150.degree. C. or more and an average molecular weight of 3000 to 8000. When used as photoresist, the composition can form a fine resist pattern. ##STR1## where R.sub.1 and R.sub.2 are either the same or different, each of which represents at least one selected from the group consisting of hydrogen, halogen atom, cyano group, nitro group, silyl group, and monovalent organic group; X represents >C.dbd.O or --SO.sub.2 --; Y represents a divalent organic group; R.sub.1 and R.sub.2 can be bonded together, forming a ring; and at least one of R.sub.1, R.sub.2, and Y has a substituent which is decomposed by an acid.
    • 一种光敏组合物,其包含:具有至少一个被酸分解的取代基的酸可分解化合物,形成与碱溶液反应形成-COO-或-SO 3 - 的产物; 以及当暴露于化学辐射时产生酸的化合物。 如果需要,组合物还包含碱溶性聚合物。 酸分解性化合物是由下式(1)表示的化合物,碱溶性聚合物的软化点为150℃以上,平均分子量为3000〜8000。当用作光致抗蚀剂时, 该组合物可形成精细的抗蚀剂图案。 (1)其中R1和R2相同或不同,它们各自表示选自氢,卤素原子,氰基,硝基,甲硅烷基和一价有机基团中的至少一种; X表示> C = O或-SO 2 - ; Y表示二价有机基团; R1和R2可以结合在一起,形成环; R 1,R 2和Y中的至少一个具有被酸分解的取代基。
    • 35. 发明申请
    • Method for pattern formation
    • 图案形成方法
    • US20080041818A1
    • 2008-02-21
    • US11727158
    • 2007-03-23
    • Naoko KiharaHiroyuki Hieda
    • Naoko KiharaHiroyuki Hieda
    • C23F1/02
    • H01L21/3086B82Y10/00Y10S438/942
    • There is provided a method for pattern formation, including a step of coating a composition comprising a block copolymer, a silicon compound, and a solvent for dissolving these components onto an object to form a layer of the composition on the object, a step of subjecting the layer of the composition to self-organization of the block copolymer to cause phase separation into a first phase, in which the silicon compound is localized, having higher etching resistance by heat treatment or/and oxygen plasma treatment, and a second phase comprising a polymer phase and having lower etching resistance by heat treatment or/and oxygen plasma treatment, and thereby forming a pattern layer with a fine pattern, and a step of etching the object using as a mask the thus formed pattern layer.
    • 提供了一种形成图案的方法,其包括将包含嵌段共聚物,硅化合物和溶剂的组合物涂布到物体上以形成该物质层的步骤, 所述组合物层自组织所述嵌段共聚物以引起相分离成其中所述硅化合物定位的第一相,通过热处理或/和氧等离子体处理具有较高的耐蚀刻性,以及第二相,其包含 聚合物相,并且通过热处理或/和氧等离子体处理具有较低的耐腐蚀性,从而形成具有精细图案的图案层,以及使用由此形成的图案层作为掩模蚀刻该物体的步骤。
    • 39. 发明授权
    • Photosensitive composition and method of forming a pattern using the same
    • 光敏组合物和使用其形成图案的方法
    • US06306553B1
    • 2001-10-23
    • US08473963
    • 1995-06-07
    • Naoko KiharaFumihiko YuasaTohru UshirogouchiTsukasa TadaOsamu SasakiTakuya NaitoSatoshi Saito
    • Naoko KiharaFumihiko YuasaTohru UshirogouchiTsukasa TadaOsamu SasakiTakuya NaitoSatoshi Saito
    • G03C176
    • G03F7/0045Y10S430/115Y10S430/116Y10S430/118
    • A photosensitive composition comprising: an acid-decomposable compound having at least one substituent which is decomposed by an acid, forming a product which reacts with alkali solution and forms —COO− or —SO3−; and a compound which generates an acid when exposed to a chemical radiation. If necessary, the composition further comprises an alkali-soluble polymer. The acid-decomposable compound is one which is represented by the following formula (1), and the alkali-soluble polymer has a softening point of 150° C. or more and an average molecular weight of 3000 to 8000. When used as photoresist, the composition can form a fine resist pattern. where R1 and R2 are either the same or different, each of which represents at least one selected from the group consisting of hydrogen, halogen atom, cyano group, nitro group, silyl group, and monovalent organic group; X represents >C═O or —SO2—; Y represents a divalent organic group; R1 and R2 can be bonded together, forming a ring; and at least one of R1, R2, and Y has a substituent which is decomposed by an acid.
    • 一种光敏组合物,其包含:具有至少一个被酸分解的取代基的酸可分解化合物,形成与碱溶液反应形成-COO-或-SO 3 - 的产物; 以及当暴露于化学辐射时产生酸的化合物。 如果需要,组合物还包含碱溶性聚合物。 酸分解性化合物是由下式(1)表示的化合物,碱溶性聚合物的软化点为150℃以上,平均分子量为3000〜8000。当用作光致抗蚀剂时, 该组合物可以形成精细的抗蚀剂图案,其中R1和R2相同或不同,它们各自表示选自氢,卤素原子,氰基,硝基,甲硅烷基和一价有机基团中的至少一种 组; X表示> C = O或-SO 2 - ; Y表示二价有机基团; R1和R2可以结合在一起,形成环; R 1,R 2和Y中的至少一个具有被酸分解的取代基。