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31. 发明申请

US20080254621A1 Wafer Electroless Plating System and Associated Methods 有权
标题翻译：晶圆化学镀系统及相关方法
公开(公告)号：US20080254621A1
公开(公告)日：2008-10-16
申请号：US11735984
申请日：2007-04-16
申请人： William Thie , John M. Boyd , Fritz C. Redeker , Yezdi Dordi , John Parks , Tiruchirapalli Arunagiri , Aleksander Owczarz , Todd Balisky , Clint Thomas , Jacob Wylie
发明人： William Thie , John M. Boyd , Fritz C. Redeker , Yezdi Dordi , John Parks , Tiruchirapalli Arunagiri , Aleksander Owczarz , Todd Balisky , Clint Thomas , Jacob Wylie
IPC分类号： H01L21/44 , B05C11/11 , B05C13/00
CPC分类号： H01L21/288 , C23C18/1619 , C23C18/1632 , H01L21/76873
摘要： A dry-in/dry-out system is disclosed for wafer electroless plating. The system includes an upper zone for wafer ingress/egress and drying operations. Proximity heads are provided in the upper zone to perform the drying operations. The system also includes a lower zone for electroless plating operations. The lower zone includes an electroless plating apparatus that implements a wafer submersion by fluid upwelling method. The upper and lower zones of the system are enclosed by a dual-walled chamber, wherein the inner wall is a chemically inert plastic and the outer wall is a structural metal. The system interfaces with a fluid handling system which provides the necessary chemistry supply and control for the system. The system is ambient controlled. Also, the system interfaces with an ambient controlled managed transfer module (MTM).
摘要翻译：公开了一种用于晶片无电镀的干/干输出系统。该系统包括用于晶片入口/出口和干燥操作的上部区域。靠近头部设置在上部区域以执行干燥操作。该系统还包括用于无电镀操作的下部区域。下部区域包括通过流体上升流法实现晶片浸没的化学镀设备。系统的上部和下部区域由双壁室围住，其中内壁是化学惰性塑料，外壁是结构金属。系统与流体处理系统接口，为系统提供必要的化学物质供应和控制。系统是环境控制的。此外，系统与环境受控的托管传输模块（MTM）接口。

32. 发明申请

US20080006307A1 Substrate proximity processing structures 失效
标题翻译：基板接近处理结构
公开(公告)号：US20080006307A1
公开(公告)日：2008-01-10
申请号：US11903289
申请日：2007-09-21
申请人： Carl Woods , Michael Smith , John Parks
发明人： Carl Woods , Michael Smith , John Parks
IPC分类号： B08B3/00
CPC分类号： B08B3/02 , C25D5/08 , C25D17/00 , C25D17/001 , C25D21/00 , H01L21/02057 , H01L21/67023 , H01L21/67028 , H01L21/67034 , H01L21/6704 , H01L21/67051 , H01L21/67063 , H01L21/6708 , Y10S134/902
摘要： An apparatus for generating a fluid meniscus to be formed on a surface of a substrate is provided including a housing where the housing includes a housing surface to be placed proximate to a substrate surface of the substrate. The housing further includes a process configuration receiving region that is surrounded by the housing surface. The apparatus also includes a process configuration insert which has an insert surface where the process configuration insert is defined to fit within the process configuration receiving region of the housing such that the insert surface and the housing surface define a proximity face that can be placed proximate to the substrate surface of the substrate.
摘要翻译：提供了一种用于产生要形成在基板的表面上的流体弯液面的装置，其包括壳体，其中壳体包括靠近基板的基板表面放置的壳体表面。壳体还包括由壳体表面包围的过程配置接收区域。该设备还包括具有插入表面的过程配置插入件，其中该过程配置插入件被限定为适合于壳体的过程配置接收区域内，使得插入表面和壳体表面限定可以靠近衬底的衬底表面。

33. 发明授权

US07254900B2 Wafer edge wheel with drying function 有权
标题翻译：晶圆边缘轮具有干燥功能
公开(公告)号：US07254900B2
公开(公告)日：2007-08-14
申请号：US11395893
申请日：2006-03-31
申请人： John Parks
发明人： John Parks
IPC分类号： F26B19/00
CPC分类号： H01L21/67034 , H01L21/6838
摘要： An edge wheel for supporting and rotating a disk-shaped substrate includes a wheel body having a peripheral groove configured to support an edge of a substrate and at least one radial channel extending into said wheel body from said peripheral groove. An edge wheel dryer and a method for processing a disk-shaped substrate are also described.
摘要翻译：用于支撑和旋转盘形基底的边缘轮包括具有构造成支撑基底的边缘的周边槽和从所述周边槽延伸到所述轮体中的至少一个径向通道的轮体。还描述了边缘轮干燥器和用于处理盘形基底的方法。

34. 发明申请

US20070119477A1 Method and Apparatus for Semiconductor Wafer Cleaning Using High-Frequency Acoustic Energy with Supercritical Fluid 有权
标题翻译：使用超临界流体使用高频声能的半导体晶片清洗的方法和装置
公开(公告)号：US20070119477A1
公开(公告)日：2007-05-31
申请号：US11670631
申请日：2007-02-02
申请人： Fred Redecker , John Boyd , John Parks
发明人： Fred Redecker , John Boyd , John Parks
IPC分类号： B08B3/12 , B08B6/00 , C23G1/00
CPC分类号： B08B3/12 , B08B7/0021 , H01L21/67057 , Y10S134/902
摘要： An apparatus and a method is provided for using high-frequency acoustic energy with a supercritical fluid to perform a semiconductor wafer (“wafer”) cleaning process. High-frequency acoustic energy is applied to the supercritical fluid to impart energy to particulate contamination present on the wafer surface. Energy imparted to particulate contamination via the high-frequency acoustic energy and supercritical fluid is used to dislodge and remove the particulate contamination from the wafer. Additionally, the wafer cleaning process benefits from the supercritical fluid properties of near zero surface tension, high diffusivity, high density, and chemical mixing capability.
摘要翻译：提供了一种使用高频声能与超临界流体来执行半导体晶片（“晶片”）清洁工艺的装置和方法。高频声能被施加到超临界流体以赋予存在于晶片表面上的颗粒污染物的能量。通过高频声能和超临界流体赋予颗粒污染物的能量被用来移除和去除晶片上的颗粒污染物。此外，晶片清洗过程受益于近零表面张力，高扩散性，高密度和化学混合能力的超临界流体性质。

35. 发明申请

US20070088184A1 Bromination Process 失效
标题翻译：溴化过程
公开(公告)号：US20070088184A1
公开(公告)日：2007-04-19
申请号：US11550287
申请日：2006-10-17
申请人： John Parks , David Knoebel , Lawrence Jenkins , George Ransford , Gary Bowman , Saadat Hussain
发明人： John Parks , David Knoebel , Lawrence Jenkins , George Ransford , Gary Bowman , Saadat Hussain
IPC分类号： C07C17/013
CPC分类号： B01J19/26 , B01J2219/00051 , B01J2219/00094 , B01J2219/00101 , B01J2219/00162 , C07C17/12 , C07C25/18 , C08K3/2279 , C08K5/03 , C08K2201/014
摘要： This invention relates to a novel process which comprises feeding a mixture formed from diphenylethane and bromine to a stirrable reaction mass comprised of bromine and a bromination catalyst to yield a decabromodiphenylethane wet cake which can be most economically treated to provide a high quality decabromodiphenylethane product.
摘要翻译：本发明涉及一种新方法，其包括将由二苯基乙烷和溴形成的混合物加入到由溴和溴化催化剂组成的可搅拌的反应物料中，以产生十溴二苯乙烷湿滤饼，其最经济地处理以提供高质量的十溴二苯乙烷产物。

36. 发明授权

US07191787B1 Method and apparatus for semiconductor wafer cleaning using high-frequency acoustic energy with supercritical fluid 有权
标题翻译：用超临界流体使用高频声能的半导体晶片清洗方法和装置
公开(公告)号：US07191787B1
公开(公告)日：2007-03-20
申请号：US10357664
申请日：2003-02-03
申请人： Fred C. Redeker , John M. Boyd , John Parks
发明人： Fred C. Redeker , John M. Boyd , John Parks
IPC分类号： B06B3/12
CPC分类号： B08B3/12 , B08B7/0021 , H01L21/67057 , Y10S134/902
摘要： An apparatus and a method is provided for using high-frequency acoustic energy with a supercritical fluid to perform a semiconductor wafer (“wafer”) cleaning process. High-frequency acoustic energy is applied to the supercritical fluid to impart energy to particulate contamination present on the wafer surface. Energy imparted to particulate contamination via the high-frequency acoustic energy and supercritical fluid is used to dislodge and remove the particulate contamination from the wafer. Additionally, the wafer cleaning process benefits from the supercritical fluid properties of near zero surface tension, high diffusivity, high density, and chemical mixing capability.
摘要翻译：提供了一种使用高频声能与超临界流体来执行半导体晶片（“晶片”）清洁工艺的装置和方法。高频声能被施加到超临界流体以赋予存在于晶片表面上的颗粒污染物的能量。通过高频声能和超临界流体赋予颗粒污染物的能量被用来移除和去除晶片上的颗粒污染物。此外，晶片清洗过程受益于近零表面张力，高扩散性，高密度和化学混合能力的超临界流体性质。

37. 发明申请

US20060130762A1 Wafer heating and temperature control by backside fluid injection 有权
标题翻译：通过背面液体注入进行晶圆加热和温度控制
公开(公告)号：US20060130762A1
公开(公告)日：2006-06-22
申请号：US11015968
申请日：2004-12-17
申请人： Ben Mooring , John Parks , Diane Hymes
发明人： Ben Mooring , John Parks , Diane Hymes
IPC分类号： C23C16/00
CPC分类号： H01L21/67109
摘要： In one of the many embodiments, an apparatus for processing a substrate is provided which includes a substrate processing chamber where the substrate is positioned within the substrate processing chamber so the substrate at least partially separates the substrate processing chamber into a first chamber and a second chamber. The apparatus further includes a first chamber inlet configured to input a first fluid of a first temperature into the first chamber at a first pressure and a second chamber inlet configured to input a second fluid of a second temperature into the second chamber at a second pressure wherein the first pressure and the second pressure are substantially equal. The second temperature is capable of being utilized to manage substrate temperature.
摘要翻译：在许多实施例中的一个实施例中，提供了一种用于处理衬底的设备，其包括衬底处理室，其中衬底位于衬底处理室内，使得衬底至少部分地将衬底处理室分离成第一腔室和第二腔室。该装置还包括第一室入口，其构造成在第一压力下将第一温度的第一流体输入到第一室中，并且第二室入口构造成在第二压力下将第二温度的第二流体输入到第二室中，第一压力和第二压力基本相等。第二个温度可以用来管理衬底温度。

38. 发明申请

US20050132953A1 Edge dry manifold 有权
标题翻译：边缘干燥歧管
公开(公告)号：US20050132953A1
公开(公告)日：2005-06-23
申请号：US10745219
申请日：2003-12-22
申请人： Glenn Davis , Carl Woods , John Parks , Fred Redeker , Mike Ravkin , Michael Orbock
发明人： Glenn Davis , Carl Woods , John Parks , Fred Redeker , Mike Ravkin , Michael Orbock
IPC分类号： H01L21/00 , H01L21/687 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H01L21/67023 , H01L21/67028 , H01L21/67034 , H01L21/6704 , H01L21/68707
摘要： A apparatus for drying a substrate includes a vacuum manifold positioned adjacent to an edge wheel. The edge wheel includes an edge wheel groove for receiving a peripheral edge of a substrate, and the edge wheel is capable of rotating the substrate at a desired set velocity. The vacuum manifold includes a proximity end having one or more vacuum ports defined therein. The proximity end is positioned at least partially within the edge wheel groove, and using supplied vacuum removes fluids that accumulate in the edge wheel groove and prevents re-deposit of trapped fluids around the peripheral edge of the substrate.
摘要翻译：用于干燥衬底的设备包括邻近边缘轮定位的真空歧管。边缘轮包括用于接收基板周边的边缘轮槽，并且边缘轮能够以所需的设定速度旋转基板。真空歧管包括具有限定在其中的一个或多个真空端口的邻近端。邻近端部至少部分地定位在边缘轮槽内，并且使用提供的真空去除积聚在边缘轮槽中的流体并且防止捕获的流体围绕衬底的周边边缘重新沉积。

39. 发明申请

US20050098115A1 Atmospheric substrate processing apparatus for depositing multiple layers on a substrate 审中-公开
标题翻译：用于在基板上沉积多层的大气基板处理装置
公开(公告)号：US20050098115A1
公开(公告)日：2005-05-12
申请号：US10992005
申请日：2004-11-17
申请人： Michael Barnes , Michael Cox , Canfeng Lai , John Parks
发明人： Michael Barnes , Michael Cox , Canfeng Lai , John Parks
IPC分类号： C23C16/54 , C30B25/08 , H01L21/00 , C23C16/00
CPC分类号： H01L21/67167 , C23C16/54 , C30B25/08 , H01L21/67184 , Y10S414/139
摘要： A substrate processing apparatus is disclosed. In one embodiment, the apparatus includes a first atmospheric deposition station and a second atmospheric deposition station. The second atmospheric deposition station comprises an atmospheric pressure vapor deposition chamber. A substrate handling system is adapted to transfer substrates between the first and the second atmospheric deposition stations.
摘要翻译：公开了一种基板处理装置。在一个实施例中，该装置包括第一大气沉积站和第二大气沉积站。第二大气沉积站包括大气压气相沉积室。衬底处理系统适于在第一和第二大气沉积站之间传送衬底。

40. 发明授权

US08591665B2 Wafer heating and temperature control by backside fluid injection 有权
标题翻译：通过背面液体注入进行晶圆加热和温度控制
公开(公告)号：US08591665B2
公开(公告)日：2013-11-26
申请号：US13665702
申请日：2012-10-31
申请人： Ben Mooring , John Parks , Diane J. Hymes
发明人： Ben Mooring , John Parks , Diane J. Hymes
IPC分类号： B08B7/00 , B08B7/04
CPC分类号： H01L21/67109
摘要： Methods, systems, and computer programs are presented for processing a substrate in a processing chamber which includes a first chamber and a second chamber. A first surface of the substrate is exposed to the first chamber and a second surface of the substrate is exposed to the second chamber. One method includes an operation for applying a first fluid to the first surface of the substrate, where the first fluid is at a first temperature. Further, the method includes another operation for applying a second fluid to the second surface of the substrate, where the second fluid is at a second temperature. During processing of the substrate, the second temperature is higher than the first temperature, and the second fluid heats the substrate.
摘要翻译：呈现用于处理包括第一室和第二室的处理室中的衬底的方法，系统和计算机程序。衬底的第一表面暴露于第一腔室，衬底的第二表面暴露于第二腔室。一种方法包括将第一流体施加到基底的第一表面的操作，其中第一流体处于第一温度。此外，该方法包括将第二流体施加到基板的第二表面的另一操作，其中第二流体处于第二温度。在处理基板期间，第二温度高于第一温度，第二流体加热基板。

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