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    • 5. 发明申请
    • Methods of proximity head brushing
    • 接近头刷的方法
    • US20080105277A1
    • 2008-05-08
    • US12008552
    • 2008-01-11
    • John BoydMichael OrbockFred Redeker
    • John BoydMichael OrbockFred Redeker
    • B08B1/00
    • H01L21/67046Y10S134/902
    • A wafer preparation method is provided for producing a wet region and then a corresponding dry region on the wafer. Brushing produces the wet region on the wafer. As the brushing moves in a selected scan operation across the wafer, a generating operation forms a meniscus that follows the brushing and dries the wet region. The generating operation produces the meniscus at least partially surrounding the wet region scrubbed by the scrubbing. The controlled meniscus is formed by applying fluid to the surface of the wafer and simultaneously removing the fluid. The scan operations may be selected so the brushing scrubs the wet region and then the meniscus forms the dry region where the scrubbing took place. The scan operations include a radial scan, a linear scan, a spiral scan and a raster scan.
    • 提供晶片制备方法,用于在晶片上产生湿区域,然后产生相应的干燥区域。 刷子在晶片上产生湿区域。 当刷洗在晶片上的选择的扫描操作中移动时,产生操作形成跟随刷牙并干燥湿区域的弯液面。 生成操作产生弯液面,至少部分地围绕通过洗涤擦洗的湿区域。 受控的弯液面通过将流体施加到晶片的表面并同时去除流体而形成。 可以选择扫描操作,使得刷洗擦洗湿区域,然后弯液面形成擦洗发生的干燥区域。 扫描操作包括径向扫描,线性扫描,螺旋扫描和光栅扫描。
    • 7. 发明申请
    • Proximity brush unit apparatus and method
    • 接近刷单元装置和方法
    • US20050132515A1
    • 2005-06-23
    • US10742303
    • 2003-12-18
    • John BoydMichael OrbockFred Redeker
    • John BoydMichael OrbockFred Redeker
    • H01L21/00B08B1/04
    • H01L21/67046Y10S134/902
    • An apparatus is provided for producing a wet region and corresponding dry region on a wafer. A proximity brush unit delivers fluids with a rotatable brush to produce the wet region on the wafer. As the proximity brush unit moves in a selected scan method across the wafer, a plurality of ports produces the dry region on the wafer. Further, the rotatable brush disposed within the proximity brush unit can rotate via mechanical gears or electromagnetic levitation. The selected scan method that produces the wet region and the dry region moves the proximity brush unit in a variety of methods including a radial scan, a linear scan, a spiral scan and a raster scan. To further produce a dry region during the selected scan method, the plurality of ports disposed on the surface of the proximity brush unit is on the trailing edges of the proximity head unit and the wafer.
    • 提供了一种用于在晶片上产生湿区域和相应的干燥区域的装置。 接近刷单元用可旋转的刷子输送流体以在晶片上产生湿区域。 当接近刷单元以选定的扫描方法移动跨越晶片时,多个端口在晶片上产生干燥区域。 此外,设置在接近刷单元内的可旋转刷可以经由机械齿轮或电磁悬浮来旋转。 产生湿区域和干燥区域的选择的扫描方法以包括径向扫描,线性扫描,螺旋扫描和光栅扫描的各种方法移动接近刷单元。 为了在所选择的扫描方法期间进一步产生干燥区域,设置在接近刷单元表面上的多个端口位于邻近头单元和晶片的后缘。
    • 10. 发明申请
    • Method and apparatus for plating semiconductor wafers
    • 用于电镀半导体晶片的方法和装置
    • US20050284767A1
    • 2005-12-29
    • US10879263
    • 2004-06-28
    • Yezdi DordiBob MaraschinJohn BoydFred RedekerCarl Woods
    • Yezdi DordiBob MaraschinJohn BoydFred RedekerCarl Woods
    • C25D7/12H01L21/288
    • C25D17/14C25D5/06C25D7/123C25D17/001C25D17/12H01L21/2885
    • First and second electrodes are disposed at first and second locations, respectively, proximate to a periphery of a wafer support, wherein the first and second location are substantially opposed to each other relative to the wafer support. Each of the first and second electrodes can be moved to electrically connect with and disconnect from a wafer held by the wafer support. An anode is disposed over and proximate to the wafer such that a meniscus of electroplating solution is maintained between the anode and the wafer. As the anode moves over the wafer from the first location to the second location, an electric current is applied through the meniscus between the anode and the wafer. Also, as the anode is moved over the wafer, the first and second electrodes are controlled to connect with the wafer while ensuring that the anode does not pass over an electrode that is connected.
    • 第一和第二电极分别设置在靠近晶片支撑件的周边的第一和第二位置处,其中第一和第二位置相对于晶片支撑件彼此基本相对。 可以使第一和第二电极中的每一个移动以与由晶片支撑件保持的晶片电连接和断开。 阳极设置在晶片上方并且靠近晶片,使得电镀溶液的弯液面保持在阳极和晶片之间。 当阳极从晶片从第一位置移动到第二位置时,通过阳极和晶片之间的弯液面施加电流。 此外,当阳极移动到晶片上时,第一和第二电极被控制以与晶片连接,同时确保阳极不通过连接的电极。