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    • 39. 发明授权
    • In-situ substrate transfer shuttle
    • 原位底物转运梭
    • US06176668B1
    • 2001-01-23
    • US09082488
    • 1998-05-20
    • Shinichi KuritaJohn M. White
    • Shinichi KuritaJohn M. White
    • B65G4907
    • H01L21/67748Y10S414/139
    • The present invention provides an apparatus and method for sequential deposition of regular series of layers on consecutive substrates in a modular assembly-line like system. The apparatus and method are especially used processing large glass or metal substrates such as are employed in solar panels. The apparatus includes a load lock chamber and a processing chamber coupled to the load lock chamber. Both the load lock chamber and the processing chamber include a platen to support the substrate. Each platen includes slots therein. A substrate transfer shuttle is provided which is moveable along a shuttle path between one position in the load lock chamber and another position in the processing chamber for transferring the substrate between the load lock chamber and the processing chamber. The shuttle may be moved below the level of the platen and may be maintained in the processing chamber during processing.
    • 本发明提供了一种用于在模块化装配线状系统中在连续基板上顺序沉积规则系列层的装置和方法。 该装置和方法特别用于处理太阳能电池板中使用的大型玻璃或金属基板。 该装置包括负载锁定室和联接到负载锁定室的处理室。 负载锁定室和处理室都包括支撑基板的压板。 每个压板包括槽。 提供了一种基板传送梭,其能够沿着穿过加载锁定室中的一个位置和处理室中的另一个位置之间的穿梭路径移动,用于在载荷锁定室和处理室之间传送基板。 梭子可以移动到压板的水平面以下并且可以在处理期间保持在处理室中。
    • 40. 发明授权
    • Plasma uniformity control by gas diffuser hole design
    • 通过气体扩散器孔设计的等离子体均匀性控制
    • US09200368B2
    • 2015-12-01
    • US13207227
    • 2011-08-10
    • Soo Young ChoiJohn M. WhiteQunhua WangLi HouKi Woon KimShinichi KuritaTae Kyung WonSuhail AnwarBeom Soo ParkRobin L. Tiner
    • Soo Young ChoiJohn M. WhiteQunhua WangLi HouKi Woon KimShinichi KuritaTae Kyung WonSuhail AnwarBeom Soo ParkRobin L. Tiner
    • C23C16/455C23C16/34C23C16/509H01J37/32
    • H01J37/3244C23C16/345C23C16/455C23C16/45565C23C16/5096H01J37/32082H01J37/32091H01J37/32541H01J37/32596H01J2237/327H01J2237/3321H01J2237/3323H01J2237/3325Y10T29/49885Y10T29/49996
    • Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.
    • 提供了用于在处理室中分配气体的气体扩散板的实施例。 气体分配板包括具有上游侧和下游侧的扩散板,以及在扩散板的上游侧和下游侧之间通过的多个气体通路。 气体通道包括在下游侧的中空阴极腔,以增强等离子体电离。 延伸到下游端的气体通道的空心阴极腔的深度,直径,表面积和密度可以从扩散板的中心到边缘逐渐增加,以改善衬底上的膜厚度和性能均匀性 。 从扩散板的中心到边缘的直径,深度和表面积的增加可以通过向下游侧弯曲扩散板,然后在凸出的下游侧加工出来。 扩散板的弯曲可以通过热处理或真空工艺来实现。 从扩散板的中心到边缘的直径,深度和表面积的增加也可以用计算机数字控制加工。 具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加,深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。