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31. 发明申请

US20120281274A1 SEMICONDUCTOR OPTICAL DEVICES AND METHODS OF FABRICATING THE SAME 有权
标题翻译：半导体光学器件及其制造方法
公开(公告)号：US20120281274A1
公开(公告)日：2012-11-08
申请号：US13307067
申请日：2011-11-30
申请人： Dong Churl KIM , Kisoo Kim , Hyun Soo Kim , Byung-seok Choi , O-Kyun Kwon , Jong Sool Jeong , Dae Kon Oh
发明人： Dong Churl KIM , Kisoo Kim , Hyun Soo Kim , Byung-seok Choi , O-Kyun Kwon , Jong Sool Jeong , Dae Kon Oh
IPC分类号： H01S5/20 , H01L21/04
CPC分类号： H01S5/1028 , H01S5/0265 , H01S5/0425 , H01S5/1003 , H01S5/101 , H01S5/1014 , H01S5/2222 , H01S2301/16
摘要： A semiconductor optical device includes a first mode converting core, a light amplification core, a second mode converting core, and a light modulation core disposed in a first mode converting region, a light amplification region, a second mode converting region, and a light modulating region of a semiconductor substrate, respectively, and a current blocking section covering at least sidewalls and a top surface of the light amplification core. The first mode converting core, the light amplification core, the second mode converting core, and the light modulation core are arranged along one direction in the order named, and are connected to each other in butt joints. The current blocking section includes first, second, and third cladding patterns sequentially stacked. The second cladding pattern is doped with dopants of a first conductivity type, and the first and third cladding patterns are doped with dopants of a second conductivity type.
摘要翻译：半导体光学器件包括第一模式转换核心，光放大核心，第二模式转换核心和设置在第一模式转换区域中的光调制核心，光放大区域，第二模式转换区域和光调制区域，以及至少覆盖光放大芯的侧壁和顶表面的电流阻挡部分。第一模式转换核心，光放大核心，第二模式转换核心和光调制核心按照命名的顺序沿一个方向布置，并且在对接中彼此连接。电流阻挡部分包括顺序层叠的第一，第二和第三包层图案。第二包层图案掺杂有第一导电类型的掺杂剂，并且第一和第三包层图案掺杂有第二导电类型的掺杂剂。

32. 发明授权

US08195455B2 Apparatus and method for sound recognition in portable device 有权
标题翻译：便携式设备中声音识别的装置和方法
公开(公告)号：US08195455B2
公开(公告)日：2012-06-05
申请号：US12388188
申请日：2009-02-18
申请人： Hyun Soo Kim
发明人： Hyun Soo Kim
IPC分类号： G10L15/00
CPC分类号： G10L17/26 , G10L17/20
摘要： Provided are an apparatus and a method capable of recognizing a sound through a reduced burden of computations and a noise-tolerant technique. The sound recognition apparatus in a portable device includes a memory unit that stores at least one base sound and a sound input unit that receives a sound input. The sound recognition apparatus also includes a control unit that receives the sound input from the sound input unit, extracts peak values of the sound input, calculates statistical data by using the peak values, and determines whether the sound input is equal to a base sound by using the statistical data.
摘要翻译：提供了能够通过减少计算负担和耐噪声技术来识别声音的装置和方法。便携式装置中的声音识别装置包括存储至少一个基本声音的存储单元和接收声音输入的声音输入单元。声音识别装置还包括控制单元，其接收从声音输入单元输入的声音，提取声音输入的峰值，通过使用峰值计算统计数据，并且通过以下方式确定声音输入是否等于基本声音使用统计数据。

33. 发明授权

US08184843B2 Method and apparatus for sound source localization using microphones 有权
标题翻译：使用麦克风进行声源定位的方法和装置
公开(公告)号：US08184843B2
公开(公告)日：2012-05-22
申请号：US12262303
申请日：2008-10-31
申请人： Hyun Soo Kim
发明人： Hyun Soo Kim
IPC分类号： H04R3/00 , H04R9/08
CPC分类号： H04R1/406 , H04R2201/401
摘要： A method and apparatus for sound source localization using microphones are disclosed. The method includes: receiving signals coming from a sound source through microphones covering all directions; distinguishing the received signals into those signals directly input to the microphones from the sound source (direct signals) and those signals indirectly input to the microphones (indirect signals); identifying a candidate region at which the sound source is present using locations of the microphones receiving direct signals; selecting a point in the candidate region as a candidate location; drawing one or more virtual tangent lines, contacting with the circumference of the apparatus, from the candidate location; placing locations of the microphones receiving indirect signals on the virtual tangent lines; and localizing the sound source on the basis of signals passing through the microphones receiving direct signals and through the virtual locations of the microphones receiving indirect signals.
摘要翻译：公开了一种使用麦克风进行声源定位的方法和装置。该方法包括：通过覆盖所有方向的麦克风接收来自声源的信号; 将接收的信号区分为从声源直接输入到麦克风的信号（直接信号）和间接地输入到麦克风的信号（间接信号）; 使用麦克风接收直接信号的位置来识别存在声源的候选区域; 选择候选区域中的点作为候选位置; 从候选位置绘制一个或多个虚拟切线，与设备的圆周接触; 将麦克风接收间接信号的位置放置在虚拟切线上; 并且基于通过接收直接信号的麦克风的信号和通过接收间接信号的麦克风的虚拟位置来定位声源。

34. 发明授权

US08183745B2 High frequency ultrasound transducers 有权
标题翻译：高频超声换能器
公开(公告)号：US08183745B2
公开(公告)日：2012-05-22
申请号：US11745615
申请日：2007-05-08
申请人： Susan Trolier-McKinstry , Thomas N. Jackson , Kyusun Choi , Richard L. Tutwiler , In Soo Kim , Hyun Soo Kim , Sung Kyu Park , Ioanna G. Mina
发明人： Susan Trolier-McKinstry , Thomas N. Jackson , Kyusun Choi , Richard L. Tutwiler , In Soo Kim , Hyun Soo Kim , Sung Kyu Park , Ioanna G. Mina
IPC分类号： H01L41/08
CPC分类号： B06B1/0629
摘要： An example ultrasound device, such as a transducer array, includes a plurality of ultrasound transducers, each ultrasound transducer having a first electrode, a second electrode, a thin piezoelectric film located between the electrodes, and a substrate supporting the plurality of ultrasound transducers. In some examples, the electrode separation is less than 10 microns, facilitating lower voltage operation than conventional ultrasound transducers.
摘要翻译：诸如换能器阵列的示例性超声装置包括多个超声换能器，每个超声换能器具有第一电极，第二电极，位于电极之间的薄压电薄膜和支撑多个超声换能器的基板。在一些示例中，电极间隔小于10微米，便于比传统的超声换能器更低的电压操作。

35. 发明授权

US08149503B2 Reflective semiconductor optical amplifier and optical signal processing method using the same 有权
标题翻译：反射半导体光放大器和光信号处理方法使用相同
公开(公告)号：US08149503B2
公开(公告)日：2012-04-03
申请号：US12367431
申请日：2009-02-06
申请人： Hyun Soo Kim , O-Kyun Kwon , Dong Churl Kim , Byung-Seok Choi , Kisoo Kim , Dae Kon Oh
发明人： Hyun Soo Kim , O-Kyun Kwon , Dong Churl Kim , Byung-Seok Choi , Kisoo Kim , Dae Kon Oh
IPC分类号： H01S3/131 , H04J14/02 , H04B10/17
CPC分类号： H01S5/50 , H01S5/026 , H01S5/0608 , H01S5/06258 , H01S5/1014 , H01S5/509
摘要： Provided are a semiconductor optical amplifier and an optical signal processing method using the same. The reflective semiconductor optical amplifier includes: an optical signal amplification region operating to allow a downward optical signal incident from the external to obtain a gain; and an optical signal modulation region connected to the optical signal amplification region and generating a modulated optical signal. The downward optical signal is amplified through a cross gain modulation using the modulated optical signal and is outputted as an upward optical signal.
摘要翻译：提供了一种半导体光放大器和使用其的光信号处理方法。反射半导体光放大器包括：光信号放大区域，其操作以允许从外部入射的向下的光信号获得增益; 以及连接到光信号放大区域并产生调制光信号的光信号调制区域。向下的光信号通过使用调制光信号的交叉增益调制进行放大，并作为向上的光信号输出。

36. 发明授权

US07968893B2 Semiconductor light emitting device and method of manufacturing the same 失效
标题翻译：半导体发光器件及其制造方法
公开(公告)号：US07968893B2
公开(公告)日：2011-06-28
申请号：US12210472
申请日：2008-09-15
申请人： Sang Yeob Song , Jin Hyun Lee , Yu Seung Kim , Kwang Ki Choi , Pun Jae Choi , Hyun Soo Kim , Sang Bum Lee
发明人： Sang Yeob Song , Jin Hyun Lee , Yu Seung Kim , Kwang Ki Choi , Pun Jae Choi , Hyun Soo Kim , Sang Bum Lee
IPC分类号： H01L31/0256 , H01L33/00 , H01L21/00
CPC分类号： H01L33/40 , H01L33/32
摘要： Disclosed are a semiconductor light emitting device, which can improve characteristics of the semiconductor light emitting device such as a forward voltage characteristic and a turn-on voltage characteristic, increase light emission efficiency by lowering an input voltage, and increase reliability of the semiconductor light emitting device by a low-voltage operation, and a method of manufacturing the same. The semiconductor light emitting device includes: an n-type GaN semiconductor layer; an active layer formed on a gallium face of the n-type GaN semiconductor layer; a p-type semiconductor layer formed on the active layer; and an n-type electrode formed on a nitrogen face of the n-type GaN semiconductor layer and including a lanthanum (La)-nickel (Ni) alloy.
摘要翻译：公开了一种半导体发光器件，其能够提高半导体发光器件的特性，例如正向电压特性和导通电压特性，通过降低输入电压来提高发光效率，并提高半导体发光器件的可靠性器件的低压工作及其制造方法。半导体发光器件包括：n型GaN半导体层; 形成在所述n型GaN半导体层的镓面上的有源层; 形成在有源层上的p型半导体层; 以及形成在n型GaN半导体层的氮面上并包含镧（La） - 镍（Ni）合金的n型电极。

37. 发明授权

US07900485B2 Washing machine 有权
标题翻译：洗衣机
公开(公告)号：US07900485B2
公开(公告)日：2011-03-08
申请号：US11782953
申请日：2007-07-25
申请人： Soon Jo Lee , Ho Cheol Kwon , Beom Jun Kim , Hyun Soo Kim , Hack Chai Song , Kwang Young Lee , Eun Suk Kim
发明人： Soon Jo Lee , Ho Cheol Kwon , Beom Jun Kim , Hyun Soo Kim , Hack Chai Song , Kwang Young Lee , Eun Suk Kim
IPC分类号： D06F37/20 , F16M5/00
CPC分类号： D06F39/125
摘要： A washing machine having height adjustable legs is provided. The washing machine may include a base provided at a bottom of the washing machine, a plurality of legs coupled to the base, and an over-unscrewed prevention member provided with each leg. Each leg may include a bolt that is height-adjustably assembled at the base. The over-unscrewed prevention member may be provided at the bolt of each leg and caught by the base when the legs are unscrewed so as to set a maximum unscrew height of the legs.
摘要翻译：提供一种具有高度可调腿的洗衣机。洗衣机可以包括设置在洗衣机底部的底座，连接到基座的多个腿部，以及设置有每个腿部的过度拧紧的预防构件。每个腿可以包括在基座处高度可调组装的螺栓。可以在每个腿的螺栓处设置过度拧紧的预防构件，并且当腿部被旋下时被基部抓住，以便设置腿部的最大旋开高度。

38. 发明授权

US07797952B2 Defrosting method of drum-type washing machine 有权
标题翻译：滚筒洗衣机除霜方法
公开(公告)号：US07797952B2
公开(公告)日：2010-09-21
申请号：US11828037
申请日：2007-07-25
申请人： Soon Jo Lee , Ho Cheol Kwon , Beom Jun Kim , Hyun Soo Kim , Hack Chai Song , Kwang Young Lee , Eun Suk Kim
发明人： Soon Jo Lee , Ho Cheol Kwon , Beom Jun Kim , Hyun Soo Kim , Hack Chai Song , Kwang Young Lee , Eun Suk Kim
IPC分类号： F25D21/00
CPC分类号： D06F33/00
摘要： A defrosting method of a drum-type washing machine is provided. The defrosting method includes performing a warm water supply operation upon receiving a defrost command; performing a water discharge operation; performing a heating operation if a water level has not yet decreased; and performing an additional water discharge operation.
摘要翻译：提供了一种滚筒洗衣机的除霜方法。除霜方法包括：在接收除霜指令时进行温水供给动作; 进行排水操作; 如果水位尚未降低，则进行加热操作; 并执行额外的排水操作。

39. 发明申请

US20100140028A1 Electronic Wedge Brake System 审中-公开
标题翻译：电子楔形制动系统
公开(公告)号：US20100140028A1
公开(公告)日：2010-06-10
申请号：US12507579
申请日：2009-07-22
申请人： In Su KIM , Hyun Soo Kim , Nam Young o Cho , Chi Hoon Jo , Sang Mok Lee , Han Lim Song
发明人： In Su KIM , Hyun Soo Kim , Nam Young o Cho , Chi Hoon Jo , Sang Mok Lee , Han Lim Song
IPC分类号： F16D55/08
CPC分类号： F16D65/18 , F16D2121/24 , F16D2125/40 , F16D2127/10
摘要： An electronic wedge brake system includes an upper wedge member, one end portion of which is coupled to an inner pad provided to one side of a disc, and the other end portion of which defines an upper wedge surface thereon, a lower wedge member disposed adjacent to the upper wedge member and connected to a stationary member, the lower wedge member defining a lower wedge surface thereon in a side facing the upper wedge surface, at least a wedge roller provided between the upper and lower wedge surfaces, a roller grip plate slidably coupled to the upper wedge member for guiding a motion of the upper wedge member, and an actuator coupled to the stationary member and the roller grip plate and configured to selectively move the roller grip plate and the upper wedge member so that the inner pad can be engaged to or disengaged from the disc.
摘要翻译：电子楔形制动系统包括上楔形构件，其一端部连接到设置在盘的一侧的内垫，并且其另一端部在其上限定上楔形表面，下楔形构件邻近设置上楔形构件并连接到固定构件，下楔形构件在面向上楔形表面的一侧中限定下楔形表面，至少一楔形滚子，设置在上楔形表面和下楔形表面之间，滚轮夹板可滑动地耦合到所述上楔形构件以引导所述上楔形构件的运动;以及致动器，其耦合到所述固定构件和所述滚子夹持板，并且构造成选择性地移动所述滚轮夹板和所述上楔形构件，使得所述内垫可以与光盘接合或脱离光盘。

40. 发明申请

US20090159920A1 Nitride semiconductor light emitting device and manufacturing method of the same 有权
标题翻译：氮化物半导体发光器件及其制造方法相同
公开(公告)号：US20090159920A1
公开(公告)日：2009-06-25
申请号：US12216568
申请日：2008-07-08
申请人： Hyun Soo Kim , Joon Seop Kwak , Ki Man Kang , Jin Hyun Lee , Cheol Soo Sone , Yu Seung Kim
发明人： Hyun Soo Kim , Joon Seop Kwak , Ki Man Kang , Jin Hyun Lee , Cheol Soo Sone , Yu Seung Kim
IPC分类号： H01L33/00
CPC分类号： H01L33/42 , H01L33/0095 , H01L33/32 , H01L33/40
摘要： There is provided a nitride semiconductor light emitting device including: a light emitting structure including n-type and p-type nitride semiconductor layers and an active layer disposed therebetween; n- and p-electrodes electrically connected to the n-type and p-type nitride semiconductor layers, respectively; and an n-type ohmic contact layer disposed between the n-type nitride semiconductor layer and the n-electrode and including a first layer and a second layer, the first layer formed of an In-containing material, and the second layer disposed on the first layer and formed of a transparent conductive oxide. The nitride semiconductor light emitting device including the n-electrode exhibits high light transmittance and superior electrical characteristics. Further, the nitride semiconductor light emitting device can be manufactured by an optimal method to ensure superb optical and electrical characteristics.
摘要翻译：提供了一种氮化物半导体发光器件，包括：包括n型和p型氮化物半导体层的发光结构和设置在其间的有源层; 分别与n型和p型氮化物半导体层电连接的n型和p型电极; 以及设置在n型氮化物半导体层和n电极之间并且包括第一层和第二层的n型欧姆接触层，第一层由含In材料形成，第二层设置在第二层上第一层并由透明导电氧化物形成。包括n电极的氮化物半导体发光器件具有高透光率和优异的电特性。此外，可以通过最佳方法制造氮化物半导体发光器件，以确保极好的光学和电气特性。

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