专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US5752769A Mortar mixing machine with two conveying and mixing tubes of opposite conveying direction 失效
标题翻译：砂浆搅拌机与输送方向相反的输送混合管
公开(公告)号：US5752769A
公开(公告)日：1998-05-19
申请号：US708567
申请日：1996-09-05
申请人： Hans Weber , Anton Muller
发明人： Hans Weber , Anton Muller
IPC分类号： B01F13/10 , B28C5/12 , B28C5/14
CPC分类号： B28C5/1292
摘要： A mortar mixing machine has a frame and a hopper supported by the frame for containing dry mortar. The hopper has an outlet with an outlet opening. A first conveying and mixing tube, connected in a working position thereof to the outlet so as to extend horizontally, has at least one water inlet and is designed for mixing the dry mortar fed into the conveying and mixing tube from the hopper with water introduced via the at least one water inlet to prepare mixed moist mortar. The first conveying and mixing tube has a removal opening for the mixed moist mortar remote from the outlet. A second conveying and mixing tube is connected to the frame for directly receiving in a working position thereof the mixed moist mortar. The second conveying and mixing tube conveys the mixed moist mortar in a direction opposite to the conveying direction of the first conveying and mixing tube. The second conveying and mixing tube has a drive and is slidably retractable into a rest position together with the drive.
摘要翻译：砂浆混合机具有由框架支撑的框架和料斗，用于容纳干砂浆。料斗具有带有出口的出口。将其工作位置连接到出口以便水平延伸的第一输送和混合管具有至少一个进水口，并且设计成将从料斗供给到输送和混合管中的干砂浆与经由至少一个进水口准备混合的湿砂浆。第一输送和混合管具有远离出口的混合湿砂浆的去除开口。第二输送和混合管连接到框架，用于在其工作位置直接接收混合的湿砂浆。第二输送和混合管以与第一输送和混合管的输送方向相反的方向输送混合的湿砂浆。第二输送和混合管具有驱动器并且与驱动器一起可滑动地缩回到静止位置。

32. 发明授权

US5285544A Method of treating a web of material with a liquid 失效
标题翻译：用液体处理材料网的方法
公开(公告)号：US5285544A
公开(公告)日：1994-02-15
申请号：US946108
申请日：1992-09-17
申请人： Hans Weber
发明人： Hans Weber
IPC分类号： D06B3/20 , D06B3/12
CPC分类号： D06B3/201
摘要： The treatment of a material web (2) ensues in a U-shaped shaft comprising two shaft limbs (3, 4) and a connecting area (5) between both the shaft limbs. The shaft is filled with a treatment liquid, the feed of fresh treatment liquid and also the circulation of treatment liquid ensuing beneath the surface of the liquor within the shaft limb. The effect is a particularly intensive charging of the material web, with extremely economic use of treatment liquid. Foaming of the treatment liquid is prevented, also in the case of heavy turbulence.
摘要翻译：材料纤维网（2）的处理在由两个轴腿（3,4）和两个轴腿之间的连接区域（5）组成的U形轴中进行。轴上装有处理液，新的处理液的进料，还有在液体液位下的轴腿处理液的循环。由此引起材料网的特别密集的加载以及处理液的极少的使用。即使存在明显的湍流，也能够防止处理液的发泡。

33. 发明授权

US5134805A Fabric treatment tenter device with counterbalanced roof 失效
标题翻译：具有平衡屋顶的织物处理丝锥装置
公开(公告)号：US5134805A
公开(公告)日：1992-08-04
申请号：US791850
申请日：1991-11-14
申请人： Hermann Frantzen , Karl Grafen , Dieter Jerusalem , Kurt Mank , Adolf Putz , Theo Schiffers , Bernd-Horst Schmitz , Hans Weber
发明人： Hermann Frantzen , Karl Grafen , Dieter Jerusalem , Kurt Mank , Adolf Putz , Theo Schiffers , Bernd-Horst Schmitz , Hans Weber
IPC分类号： D06B23/14 , D06C3/00
CPC分类号： D06B23/14 , D06C3/00 , Y10T16/82
摘要： A fabric tenter device having a pivotally mounted roof which may carry a nozzle box is provided with a counterbalance assembly enabling the roof and box to be pivotally shifted from the tenter covering to an open position by manual lifting forces. The counterbalance assembly is comprised of a lever divided into two arms, the lever being pivotally mounted on a fulcrum fixed to the tenter housing. The lever includes a weight arm underlying the roof and a power arm to the opposite side of the fulcrum. A chain having one end fixed to the power arm has its other end attached to a spring mechanism carried by the weight arm, the chain being arranged over a guide roller or rollers in such manner that the spring is tensioned to its maximum extent when the roof is in the tenter covering position.
摘要翻译：具有可携带喷嘴箱的可枢转地安装的屋顶的织物拉幅装置设置有平衡组件，其使屋顶和箱能够通过手动提升力从拉幅机盖枢转地转动到打开位置。所述平衡组件包括分成两个臂的杆，所述杆可枢转地安装在固定到所述拉幅机壳体上的支点上。杠杆包括位于屋顶下方的重锤以及支点相对侧的动力臂。具有固定到动力臂的一端的链条的另一端连接到由重量臂承载的弹簧机构，链条以这样的方式布置在引导辊或辊上方，使得当屋顶在拉幅机的位置。

34. 发明授权

US08633095B2 Semiconductor device with voltage compensation structure 有权
标题翻译：具有电压补偿结构的半导体器件
公开(公告)号：US08633095B2
公开(公告)日：2014-01-21
申请号：US13174319
申请日：2011-06-30
申请人： Hans-Joachim Schulze , Hans Weber
发明人： Hans-Joachim Schulze , Hans Weber
IPC分类号： H01L21/00
CPC分类号： H01L29/7827 , H01L29/0634 , H01L29/0653 , H01L29/1054 , H01L29/165 , H01L29/167 , H01L29/36 , H01L29/66712 , H01L29/73 , H01L29/7395 , H01L29/7802 , H01L29/808 , H01L29/872
摘要： A semiconductor device with a high voltage compensation component is manufactured by etching a trench into an epitaxial semiconductor material doped with n-type dopant atoms and p-type dopant atoms and disposing a first semiconductor or insulating material along one or more sidewalls of the trench. The first semiconductor or insulating material has a dopant diffusion constant which is at least 2× different for the n-type dopant atoms than the p-type dopant atoms. A second semiconductor material is disposed in the trench along the first semiconductor or insulating material. The second semiconductor material has a different dopant diffusion constant than the first semiconductor or insulating material. More n-type dopant atoms or p-type dopant atoms are diffused from the epitaxial semiconductor material through the first semiconductor or insulating material into the second semiconductor material than the other type of dopant atoms so that a lateral charge separation occurs between the second semiconductor material and the epitaxial semiconductor material.
摘要翻译：通过将沟槽蚀刻成掺杂有n型掺杂剂原子和p型掺杂剂原子的外延半导体材料并且沿沟槽的一个或多个侧壁设置第一半导体或绝缘材料来制造具有高电压补偿分量的半导体器件。第一半导体或绝缘材料具有与p型掺杂剂原子相比对于n型掺杂剂原子至少为2×不同的掺杂剂扩散常数。第二半导体材料沿着第一半导体或绝缘材料设置在沟槽中。第二半导体材料具有与第一半导体或绝缘材料不同的掺杂剂扩散常数。比其他类型的掺杂剂原子，更多的n型掺杂剂原子或p型掺杂剂原子从外延半导体材料通过第一半导体或绝缘材料扩散到第二半导体材料中，使得在第二半导体材料和外延半导体材料。

35. 发明申请

US20130234239A1 Charge Compensation Semiconductor Device 有权
标题翻译：充电补偿半导体器件
公开(公告)号：US20130234239A1
公开(公告)日：2013-09-12
申请号：US13414037
申请日：2012-03-07
申请人： Hans Weber , Franz Hirler
发明人： Hans Weber , Franz Hirler
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/1095 , H01L29/167 , H01L29/32 , H01L29/407 , H01L29/408 , H01L29/41766 , H01L29/66727
摘要： A semiconductor device includes a semiconductor body having a first surface defining a vertical direction and a source metallization arranged on the first surface. In a vertical cross-section the semiconductor body further includes: a drift region of a first conductivity type; at least two compensation regions of a second conductivity type each of which forms a pn-junction with the drift region and is in low resistive electric connection with the source metallization; a drain region of the first conductivity type having a maximum doping concentration higher than a maximum doping concentration of the drift region, and a third semiconductor layer of the first conductivity type arranged between the drift region and the drain region and includes at least one of a floating field plate and a floating semiconductor region of the second conductivity type forming a pn-junction with the third semiconductor layer.
摘要翻译：半导体器件包括具有限定垂直方向的第一表面和布置在第一表面上的源极金属化的半导体本体。在垂直横截面中，半导体主体还包括：第一导电类型的漂移区; 至少两个第二导电类型的补偿区域，每个补偿区域与漂移区域形成pn结并与源极金属化处于低电阻电连接; 具有高于漂移区的最大掺杂浓度的最大掺杂浓度的第一导电类型的漏极区和布置在漂移区和漏极区之间的第一导电类型的第三半导体层，并且包括以下中的至少一个：浮置场板和第二导电类型的浮置半导体区域形成与第三半导体层的pn结。

36. 发明授权

US08421196B2 Semiconductor device and manufacturing method 有权
标题翻译：半导体器件及制造方法
公开(公告)号：US08421196B2
公开(公告)日：2013-04-16
申请号：US12626425
申请日：2009-11-25
申请人： Hans Weber , Gerald Deboy
发明人： Hans Weber , Gerald Deboy
IPC分类号： H01L29/06 , H01L21/336
CPC分类号： H01L29/0611 , H01L21/20 , H01L29/0607 , H01L29/0634 , H01L29/0657 , H01L29/66348 , H01L29/7397
摘要： A semiconductor device includes a drift zone of a first conductivity type formed within a semiconductor body, wherein one side of opposing sides of the drift zone adjoins a first zone within the semiconductor body and the other side adjoins a second zone within the semiconductor body. First semiconductor subzones of a second conductivity type different from the first conductivity type are formed within each of the first and second zones opposing each other along a lateral direction extending parallel to a surface of the semiconductor body. A second semiconductor subzone is formed within each of the first and second zones and between the first semiconductor subzones along the lateral direction. An average concentration of dopants within the second semiconductor subzone along 10% to 90% of an extension of the second semiconductor subzone along a vertical direction perpendicular to the surface is smaller than the average concentration of dopants along a corresponding section of extension within the drift zone.
摘要翻译：半导体器件包括形成在半导体本体内的第一导电类型的漂移区，其中漂移区的相对侧的一侧与半导体本体内的第一区相邻，而另一侧邻接半导体内的第二区。沿着与半导体主体的表面平行延伸的横向方向彼此相对地形成第一和第二区域中的第一导电类型不同于第一导电类型的第一半导体子区。第二半导体子区域形成在第一和第二区域的每一个中，并且沿着横向形成在第一半导体子区域之间。第二半导体子区域内的掺杂剂的平均浓度沿着垂直于表面的垂直方向的第二半导体子区域的延伸的10％至90％的平均浓度小于漂移区域内沿着相应的延伸部分的掺杂剂的平均浓度。

37. 发明申请

US20120305993A1 TRANSISTOR WITH CONTROLLABLE COMPENSATION REGIONS 有权
标题翻译：具有可控制补偿区的晶体管
公开(公告)号：US20120305993A1
公开(公告)日：2012-12-06
申请号：US13484490
申请日：2012-05-31
申请人： Armin Willmeroth , Franz Hirler , Hans Weber , Michael Treu
发明人： Armin Willmeroth , Franz Hirler , Hans Weber , Michael Treu
IPC分类号： H01L27/088
CPC分类号： H01L29/7813 , H01L27/088 , H01L27/098 , H01L29/0634 , H01L29/407 , H01L29/41766 , H01L29/42356 , H01L29/7803 , H01L29/7831
摘要： A semiconductor device includes a gate terminal, at least one control terminal and first and second load terminals and at least one device cell. The at least one device cell includes a MOSFET device having a load path and a control terminal, the control terminal coupled to the gate terminal and a JFET device having a load path and a control terminal, the load path connected in series with the load path of the MOSFET device between the load terminals. The at least one device cell further includes a first coupling transistor having a load path and a control terminal, the load path coupled between the control terminal of the JFET device and one of the source terminal and the gate terminal, and the control terminal coupled to the at least one control terminal of the transistor device.
摘要翻译：半导体器件包括栅极端子，至少一个控制端子以及第一和第二负载端子以及至少一个器件单元。所述至少一个器件单元包括具有负载路径和控制端子的MOSFET器件，所述控制端子耦合到所述栅极端子以及具有负载路径和控制端子的JFET器件，所述负载路径与所述负载路径串联连接的MOSFET器件在负载端子之间。所述至少一个器件单元还包括具有负载路径和控制端子的第一耦合晶体管，所述负载路径耦合在所述JFET器件的控制端子与所述源极端子和所述栅极端子之一之间，并且所述控制端子耦合到晶体管器件的至少一个控制端子。

38. 发明授权

US07193293B2 Semiconductor component with a compensation layer, a depletion zone, and a complementary depletion zone, circuit configuration with the semiconductor component, and method of doping the compensation layer of the semiconductor component 有权
标题翻译：具有补偿层，耗尽区和互补耗尽区的半导体元件，具有半导体元件的电路配置，以及掺杂半导体元件的补偿层的方法
公开(公告)号：US07193293B2
公开(公告)日：2007-03-20
申请号：US10141834
申请日：2002-05-09
申请人： Hans Weber , Dirk Ahlers , Gerald Deboy
发明人： Hans Weber , Dirk Ahlers , Gerald Deboy
IPC分类号： H01L29/00
CPC分类号： H01L29/7816 , H01L21/26506 , H01L29/0634 , H01L29/167 , H01L29/66712 , H01L29/7802 , H01L2924/0002 , H03K17/08142 , H01L2924/00
摘要： A semiconductor component, which functions according to the principle of charge carrier compensation, has incompletely ionized dopants that are additionally provided in a semiconductor body of the semiconductor component. When a reverse voltage is applied, the degree of compensation changes as a function of time and the breakdown voltage of the semiconductor component increases in a manner governed by the degree of compensation. The invention furthermore relates to a circuit configuration and to a method for doping a compensation layer according to the invention.
摘要翻译：根据电荷载流子补偿的原理起作用的半导体元件具有不完全电离的掺杂物，其被附加地设置在半导体元件的半导体本体中。当施加反向电压时，补偿程度随着时间的推移而变化，半导体组件的击穿电压以补偿程度为基础的增加。本发明还涉及根据本发明的电路配置和掺杂补偿层的方法。

39. 发明授权

US06812524B2 Field effect controlled semiconductor component 有权
标题翻译：场效应控制半导体元件
公开(公告)号：US06812524B2
公开(公告)日：2004-11-02
申请号：US10013999
申请日：2001-12-11
申请人： Dirk Ahlers , Jens-Peer Stengl , Jenoe Tihanyi , Hans Weber , Gerald Deboy , Helmut Strack , Armin Willmeroth
发明人： Dirk Ahlers , Jens-Peer Stengl , Jenoe Tihanyi , Hans Weber , Gerald Deboy , Helmut Strack , Armin Willmeroth
IPC分类号： H01L2976
CPC分类号： H01L29/7802 , H01L29/0619 , H01L29/0623 , H01L29/0634 , H01L29/1095 , H01L29/41766 , H01L29/7816
摘要： A semiconductor component includes first and second connection zones formed in a semiconductor body, a channel zone surrounding the second connection zone in the semiconductor body, and a drift path that is formed between the channel zone and the first connection zone and contains a compensation zone. The compensation zone has a complementary conduction type with respect to the drift zone and includes at least two segments. A distance between the two adjacent segments is chosen such that the punch-through voltage between these segments lies in a voltage range that corresponds to the voltage range assumed by the voltage drop across the drift path at currents situated between the rated current and twice the rated current.
摘要翻译：半导体部件包括形成在半导体本体中的第一和第二连接区域，围绕半导体主体中的第二连接区域的沟道区域以及形成在沟道区域和第一连接区域之间并且包含补偿区域的漂移路径。补偿区相对于漂移区具有互补导电类型并且包括至少两个段。选择两个相邻段之间的距离，使得这些段之间的穿通电压位于对应于位于额定电流和额定电流两倍之间的电流处的漂移路径上的电压降所假定的电压范围的电压范围当前。

40. 发明授权

US06667514B2 Semiconductor component with a charge compensation structure and associated fabrication 有权
标题翻译：具有电荷补偿结构和相关制造的半导体元件
公开(公告)号：US06667514B2
公开(公告)日：2003-12-23
申请号：US10190119
申请日：2002-07-03
申请人： Dirk Ahlers , Gerald Deboy , Hans Weber , Armin Willmeroth
发明人： Dirk Ahlers , Gerald Deboy , Hans Weber , Armin Willmeroth
IPC分类号： H01L2976
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/41766
摘要： A semiconductor component includes a charge compensation structure wherein locations with a maximum local field strength are positioned in a compensation edge region of the charge compensation structure. Thus, an electrical parameter such as the on resistance of the semiconductor component can be substantially improved without influencing or impairing further parameters such as the breakdown voltage and the robustness with respect to TRAPATT oscillations. Methods of fabricating a semiconductor component with a charge compensation structure are also provided.
摘要翻译：半导体部件包括电荷补偿结构，其中具有最大局部场强的位置位于电荷补偿结构的补偿边缘区域中。因此，可以显着地改善诸如半导体部件的导通电阻的电参数，而不影响或削弱诸如击穿电压和相对于TRAPATT振荡的鲁棒性的其它参数。还提供了制造具有电荷补偿结构的半导体部件的方法。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式