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31. 发明申请

US20060006458A1 Semiconductor device and method for manufacturing the same 审中-公开
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060006458A1
公开(公告)日：2006-01-12
申请号：US11146129
申请日：2005-06-07
申请人： Takako Motai , Tetsuo Matsuda
发明人： Takako Motai , Tetsuo Matsuda
IPC分类号： H01L29/76 , H01L21/336
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/0653 , H01L29/1095 , H01L29/408 , H01L29/66712
摘要： A semiconductor device comprises a semiconductor substrate. A plurality of first semiconductor regions are formed in a single crystal semiconductor layer of a first conduction type disposed on a surface of the semiconductor substrate as defined by a plurality of trenches provided in the single crystal semiconductor layer. A plurality of insulating regions are respectively formed on bottoms in the trenches. A plurality of second semiconductor regions are formed of a single crystal semiconductor layer of a second conduction type buried in the trenches in the presence of the insulating regions formed therein. The first semiconductor regions and second semiconductor regions are arranged alternately in a direction parallel to the surface of the semiconductor substrate.
摘要翻译：半导体器件包括半导体衬底。多个第一半导体区域形成在由设置在单晶半导体层中的多个沟槽限定的半导体衬底的表面上的第一导电类型的单晶半导体层中。在沟槽的底部分别形成有多个绝缘区域。多个第二半导体区域由在其中形成的绝缘区域的存在下埋藏在沟槽中的由第二导电类型的单晶半导体层形成。第一半导体区域和第二半导体区域在与半导体衬底的表面平行的方向上交替布置。

32. 发明授权

US06632476B2 Substrate processing method and substrate processing apparatus 失效
标题翻译：基板处理方法和基板处理装置
公开(公告)号：US06632476B2
公开(公告)日：2003-10-14
申请号：US09805034
申请日：2001-03-14
申请人： Hiroko Nakamura , Hisashi Kaneko , Tetsuo Matsuda
发明人： Hiroko Nakamura , Hisashi Kaneko , Tetsuo Matsuda
IPC分类号： B05D118
CPC分类号： H01L21/6715 , B05C9/02 , B05D1/286
摘要： After a thin liquid agent film is formed by supplying a liquid agent onto a plate-like developer holder, this liquid agent film and the surface of a substrate are opposed. The liquid agent film and the substrate are brought into contact with each other at a point by declining the substrate and moving it close to the liquid agent film, or by curving the substrate toward the liquid agent film. Then, the substrate is made parallel to the liquid agent film, and the liquid agent is supplied such that the contact area of the liquid agent film spreads over the entire surface by the interfacial tension between the liquid agent film and the substrate. Since a thin liquid agent film can be uniformly formed below the substrate, processing can be performed with a small consumption amount. Additionally, the liquid agent can be supplied to the substrate without holding air.
摘要翻译：在通过将液体试剂供应到板状显影剂载体上形成薄液剂剂膜之后，该液体试剂膜和基材的表面相对。通过使基板下降并使其靠近液体试剂膜，或者通过使基板朝向液体试剂膜弯曲而使液体试剂膜和基板彼此接触。然后，使基板与液体试剂膜平行，并且供给液体试剂，使得液体试剂膜的接触面积通过液体试剂膜和基底之间的界面张力在整个表面上扩散。由于可以在基板的下方均匀地形成薄的液体试剂膜，因此能够以小的消耗量进行处理。另外，可以将液体试剂供给到基材而不夹持空气

33. 发明授权

US06291891B1 Semiconductor device manufacturing method and semiconductor device 有权
公开(公告)号：US06291891B1
公开(公告)日：2001-09-18
申请号：US09228642
申请日：1999-01-12
申请人： Kazuyuki Higashi , Noriaki Matsunaga , Akihiro Kajita , Tetsuo Matsuda , Tadashi Iijima , Hisashi Kaneko , Hideki Shibata , Naofumi Nakamura , Minakshisundaran Balasubramanian Anand , Tadashi Matsuno , Katsuya Okumura
发明人： Kazuyuki Higashi , Noriaki Matsunaga , Akihiro Kajita , Tetsuo Matsuda , Tadashi Iijima , Hisashi Kaneko , Hideki Shibata , Naofumi Nakamura , Minakshisundaran Balasubramanian Anand , Tadashi Matsuno , Katsuya Okumura
IPC分类号： H01L2348
CPC分类号： H01L21/76852 , H01L21/288 , H01L21/76807 , H01L21/76814 , H01L21/76819 , H01L21/76831 , H01L21/76834 , H01L21/76835 , H01L21/76844 , H01L21/76849 , H01L21/76885 , H01L21/76897 , H01L23/5226 , H01L2221/1026 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device manufacturing method comprises a step of forming a trench to a first insulation film formed on a semiconductor substrate, and forming a lower level wiring in the trench, a step of forming at least one conductive layer on the semiconductor substrate to coat the lower level wiring, a step of forming at least one thin film layer on the conductive layer, a step of forming a hard mask by patterning the thin film, a step of etching the conductive layer by using the hard mask as an etching mask, and forming a conductive pillar-shaped structure, whose upper surface is covered with the hard mask, on the lower level wiring, a step of forming a second insulation film on the semiconductor substrate so that the pillar-shaped structure is buried, a step of forming a wiring trench in which at least the hard mask is exposed, and a step of burying a conductor into the wiring trench after the hard mask is removed, and forming an upper level wiring in the wiring trench.

34. 发明授权

US06227658B1 Apparatus and method for forming thin film using ink-jet mechanism 失效
标题翻译：使用喷墨机构形成薄膜的装置和方法
公开(公告)号：US06227658B1
公开(公告)日：2001-05-08
申请号：US09089505
申请日：1998-06-03
申请人： Tetsuo Matsuda , Maria Ronay
发明人： Tetsuo Matsuda , Maria Ronay
IPC分类号： B41J2145
CPC分类号： C12N9/1205 , C12Q1/485 , G01N33/6887 , G01N2500/00
摘要： A liquid material jetted from a nozzle is supplied onto a surface of the semiconductor substrate with use of an ink-jet mechanism comprising a liquid material receiving section, a driving section and a nozzle section. Since a film material (liquid material) is supplied by an ink-jet method, not only the film material only be supplied to a desired region of the semiconductor substrate surface and a supply to an unnecessary region is prevented, but also a variation of a film thickness comes not to be dependent on a pattern on the semiconductor substrate. Therefore, in forming a thin film on a semiconductor substrate, a thin film formation is realized so that utilization efficiency of a film material is increased with reduction in loss thereof and a variation of a thickness of the film formed is not influenced by a pattern on the semiconductor substrate.
摘要翻译：使用包括液体材料容纳部分，驱动部分和喷嘴部分的喷墨机构将从喷嘴喷射的液体材料供应到半导体基板的表面上。由于通过喷墨法提供薄膜材料（液体材料），不仅薄膜材料仅被供应到半导体基板表面的期望区域，并且防止了对不需要的区域的供应，而且还改变了膜厚度不依赖于半导体衬底上的图案。因此，在半导体基板上形成薄膜时，可以实现薄膜的形成，使得薄膜材料的利用效率随着其损耗的降低而增加，并且形成的薄膜的厚度的变化不受图案上的图案的影响半导体衬底。

35. 发明授权

US6150270A Method for forming barrier layer for copper metallization 有权
标题翻译：用于形成铜金属化的阻挡层的方法
公开(公告)号：US6150270A
公开(公告)日：2000-11-21
申请号：US226722
申请日：1999-01-07
申请人： Tetsuo Matsuda , Tadashi Iijima , Hisashi Kaneko
发明人： Tetsuo Matsuda , Tadashi Iijima , Hisashi Kaneko
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L21/44
CPC分类号： H01L21/76834 , H01L21/76846 , H01L21/76849 , H01L21/76855
摘要： A method comprises forming a barrier layer for copper metallization, selectively forming a silicon film on a surface of copper wiring formed on the main surface of a semiconductor substrate, and reacting the silicon film with a non-copper metal and/or nitrogen to form a barrier layer in a self-aligned manner relative to the copper wiring. In the method, the capacitance increase in the copper wirings formed is prevented, and the barrier layer formed has a satisfactory barrier property of protecting the copper wirings.
摘要翻译：一种方法包括形成用于铜金属化的阻挡层，在形成在半导体衬底的主表面上的铜布线的表面上选择性地形成硅膜，并使硅膜与非铜金属和/或氮反应形成阻挡层以相对于铜布线的自对准方式。在该方法中，防止形成的铜布线的电容增加，形成的阻挡层具有保护铜布线的令人满意的阻挡性。

36. 发明授权

US5286523A Method of processing substrates and substrate processing apparatus 失效
标题翻译：处理基板和基板处理装置的方法
公开(公告)号：US5286523A
公开(公告)日：1994-02-15
申请号：US750601
申请日：1991-08-27
申请人： Tetsuo Matsuda , Yuuichi Mikata , Akimichi Yonekura
发明人： Tetsuo Matsuda , Yuuichi Mikata , Akimichi Yonekura
IPC分类号： H01L21/205 , C23C16/44 , C23C16/455 , C30B25/14 , H01L21/30 , H01L21/31 , H01L21/316 , C23C16/00
CPC分类号： C23C16/45523 , C30B25/14
摘要： In a CVD apparatus, an epitaxial apparatus or an etching apparatus, the processing conditions are made uniform in a batch process by changing, with time, positions which are disposed in the direction of a gas flow in a reaction vessel and at which the optimal surface processing conditions are attained. By doing so, homogeneous and uniform films can be formed with a large substrate processing apparatus.
摘要翻译：在CVD装置，外延装置或蚀刻装置中，通过随时间改变在反应容器中沿气体流动方向设置的位置，在分批处理中使处理条件均匀，并且最佳表面达到加工条件。通过这样做，可以用大的基板处理装置形成均匀且均匀的膜。

37. 发明授权

US5132756A Method of manufacturing semiconductor devices 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5132756A
公开(公告)日：1992-07-21
申请号：US601042
申请日：1990-10-24
申请人： Tetsuo Matsuda
发明人： Tetsuo Matsuda
IPC分类号： H01L29/417 , H01L21/28 , H01L21/318 , H01L21/3205 , H01L21/336 , H01L23/52 , H01L29/78
CPC分类号： H01L29/6659 , H01L21/28061 , H01L21/318
摘要： An improved method of manufacturing a semiconductor device wherein an insulating film, a conducting film, a first film to prevent conducting and refractory metal films from the reaction and a refractory metal film are sequentially deposited on a semiconductor substrate. Further, a second film is formed on the surface of the refractory metal film to prevent the exposed surface of the refractory metal film from the oxidization. Tungsten, molybdenum or the like is used as a refractory metal. A nitride film, a carbide film, or a silicide film of tungsten or molybdenum may be advantageously used as the second film.
摘要翻译：一种制造半导体器件的改进方法，其中绝缘膜，导电膜，防止导电的难熔金属膜和难熔金属膜的第一膜顺序地沉积在半导体衬底上。此外，在难熔金属膜的表面上形成第二膜，以防止难熔金属膜的暴露表面发生氧化。使用钨，钼等作为难熔金属。可以有利地使用氮化物膜，碳化物膜或钨或钼的硅化物膜作为第二膜。

38. 发明授权

US4268665A Derivatives of antibiotic tylosin 失效
标题翻译：抗生素泰乐菌素衍生物
公开(公告)号：US4268665A
公开(公告)日：1981-05-19
申请号：US075661
申请日：1979-09-14
申请人： Hideo Sakakibara , Tatsuro Fujiwara , Osamu Okegawa , Toshiyuki Watanabe , Susumu Watanabe , Tetsuo Matsuda
发明人： Hideo Sakakibara , Tatsuro Fujiwara , Osamu Okegawa , Toshiyuki Watanabe , Susumu Watanabe , Tetsuo Matsuda
IPC分类号： C07H17/08 , A61K31/71
CPC分类号： C07H17/08
摘要： Derivatives of antibiotic tylosin of the formula ##STR1## wherein R.sub.1 is hydrogen or lower alkanoyl, A.sub.1 and A.sub.2 are groups of which one is R.sub.2 and the other is R.sub.3, and R.sub.2 and R.sub.3 are C.sub.2-6 alkanoyl, or a physiologically acceptable salt thereof, have enhanced antibacterial activity against macrolide antibiotic-resistant strains.
摘要翻译：其中R 1为氢或低级烷酰基，A1和A2为其中一个为R 2，另一个为R 3的基团，R 2和R 3为C 2-6烷酰基的基团的抗生素泰乐菌素衍生物，或其生理上可接受的盐对大环内酯类抗生素抗性菌株具有增强的抗菌活性。

39. 发明授权

US3960757A Process for encapsulation of medicaments 失效
标题翻译：药物封装方法
公开(公告)号：US3960757A
公开(公告)日：1976-06-01
申请号：US375027
申请日：1973-06-29
申请人： Masataka Morishita , Yoshihito Inaba , Mitsuru Fukushima , Yoshinori Hattori , Sadami Kobari , Tetsuo Matsuda
发明人： Masataka Morishita , Yoshihito Inaba , Mitsuru Fukushima , Yoshinori Hattori , Sadami Kobari , Tetsuo Matsuda
IPC分类号： A61K9/16 , A61K9/30 , B01J13/12 , B01J13/02
CPC分类号： A61K9/1694 , B01J13/125 , Y10T428/2989
摘要： Encapsulated medicaments are prepared by dissolving a wall material for capsules in at least one organic solvent poorly miscible with water which has a boiling point of less than 100.degree.C., a vapor pressure higher than that of water and a dielectric constant of less than about 10, dissolving or dispersing in the resulting solution a medicament which is insoluble or slightly soluble in water, dispersing the resulting solution or dispersion to the form of fine drops in a liquid vehicle comprising an aqueous solution of a hydrophilic colloid or surface active agent, and then removing the organic solvent by evaporation.
摘要翻译：通过将胶囊的壁材料溶解在至少一种与水不易混合的有机溶剂中制备封闭的药物，所述有机溶剂的沸点低于100℃，蒸汽压高于水的蒸气压，介电常数小于约 10，在所得溶液中溶解或分散不溶于或微溶于水的药物，将所得溶液或分散体在包含亲水胶体或表面活性剂的水溶液的液体载体中分散成细滴形式，以及然后通过蒸发除去有机溶剂。

40. 发明申请

US20100258854A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100258854A1
公开(公告)日：2010-10-14
申请号：US12821708
申请日：2010-06-23
申请人： Kenichi TOKANO , Tetsuo Matsuda , Wataru Saito
发明人： Kenichi TOKANO , Tetsuo Matsuda , Wataru Saito
IPC分类号： H01L27/088
CPC分类号： H01L29/7802 , H01L29/0634 , H01L29/1095 , H01L29/66712
摘要： A single crystal semiconductor layer of a first conduction type is disposed on a surface of a semiconductor substrate. A plurality of trenches are provided in the semiconductor layer to form a plurality of first semiconductor regions of the first conduction type at intervals in a direction parallel to the surface. An epitaxial layer is buried in the plurality of trenches to form a plurality of second semiconductor regions of a second conduction type. The plurality of second semiconductor regions each includes an outer portion with a high impurity concentration formed against an inner wall of the trench, and an inner portion with a low impurity concentration formed inner than the outer portion.
摘要翻译：第一导电类型的单晶半导体层设置在半导体衬底的表面上。在半导体层中设置多个沟槽，以在与该表面平行的方向上间隔地形成第一导电类型的多个第一半导体区域。外延层被埋在多个沟槽中以形成多个第二导电类型的第二半导体区域。多个第二半导体区域各自包括形成在沟槽的内壁上的具有高杂质浓度的外部部分，并且内部部分具有比外部部分内部形成的内部部分。

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