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31. 发明申请

US20070007587A1 Diode 审中-公开
标题翻译：二极管
公开(公告)号：US20070007587A1
公开(公告)日：2007-01-11
申请号：US11428741
申请日：2006-07-05
申请人： Reiner Barthelmess , Franz-Josef Niedernostheide , Hans-Joachim Schulze
发明人： Reiner Barthelmess , Franz-Josef Niedernostheide , Hans-Joachim Schulze
IPC分类号： H01L29/94
CPC分类号： H01L29/861 , H01L21/263 , H01L21/3242 , H01L29/0661
摘要： A diode has a semiconductor body (1), which has a front side (11) and a rear side (12) opposite the front side (11) in a vertical direction (z) of the semiconductor (1), and in which a heavily n-doped zone (5), a weakly n-doped zone (4), a weakly p-doped zone (3) and a heavily p-doped zone (2) are arranged successively in the vertical direction (z) proceeding from the rear side (12) toward the front side (11). In order to produce the weakly p-doped zone (3) of such a diode, aluminum may be introduced into the semiconductor body (1) proceeding from the front side (11). Optionally, the diode may have a field stop zone (9). Such a field stop zone (9) may be produced by rear-side indiffusion of sulfur and/or selenium into the semiconductor body (1).
摘要翻译：二极管具有在半导体（1）的垂直方向（z）上具有与前侧（11）相对的前侧（11）和后侧（12）的半导体本体（1），其中在n个掺杂区域（5），弱n掺杂区域（4），弱p掺杂区域（3）和重p掺杂区域（2）中，沿着从后侧（12）朝向前侧（11）。为了产生这种二极管的弱p掺杂区域（3），铝可以从前侧（11）引入到半导体本体（1）中。可选地，二极管可以具有场停止区（9）。这种场阻挡区（9）可以通过将硫和/或硒向后半侧向半导体本体（1）中的扩散而产生。

32. 发明申请

US20050258448A1 Thyristor component with improved blocking capabilities in the reverse direction 审中-公开
标题翻译：晶闸管组件在相反方向具有改进的阻挡能力
公开(公告)号：US20050258448A1
公开(公告)日：2005-11-24
申请号：US11116919
申请日：2005-04-28
申请人： Reiner Barthelmess , Uwe Kellner-Werdehausen , Franz-Josef Niedernostheide , Hans-Joachim Schulze
发明人： Reiner Barthelmess , Uwe Kellner-Werdehausen , Franz-Josef Niedernostheide , Hans-Joachim Schulze
IPC分类号： H01L29/06 , H01L29/10 , H01L29/74
CPC分类号： H01L29/74 , H01L29/0615 , H01L29/0619 , H01L29/0638 , H01L29/0661 , H01L29/102
摘要： A thyristor comprises a semiconductor body with a front and back face, an edge, a first semiconductor zone, embodied in the region of the rear face and a second semiconductor zone, adjacent to the first semiconductor zone, whereby the edge has a bevelled embodiment in the region of the transition between the first and second semiconductor zones, at least one third semiconductor zone, arranged in the region of the front face of the semiconductor body and at least one fourth semiconductor zone, arranged between the at least one third semiconductor zone and the second semiconductor zone. The fourth semiconductor zone terminates before the edge in the lateral direction of the semiconductor body, in order to reduce the amplification of a parasitic bipolar transistor formed in the region of the edge by the fourth semiconductor zone, the second semiconductor zone and the first semiconductor zone.
摘要翻译：晶闸管包括具有正面和背面的半导体本体，边缘，在背面的区域中实施的第一半导体区域和与第一半导体区域相邻的第二半导体区域，由此边缘具有倾斜的实施例在第一和第二半导体区域之间的过渡区域，布置在半导体主体的前表面的区域中的至少一个第三半导体区域和至少一个第四半导体区域，布置在至少一个第三半导体区域和第二个半导体区。第四半导体区域在半导体本体的横向方向上的边缘之前终止，以便减少由第四半导体区域，第二半导体区域和第一半导体区域在边缘区域中形成的寄生双极晶体管的放大率。

33. 发明授权

US06770917B2 High-voltage diode 有权
标题翻译：高压二极管
公开(公告)号：US06770917B2
公开(公告)日：2004-08-03
申请号：US10395425
申请日：2003-03-24
申请人： Reiner Barthelmess , Frank Pfirsch , Anton Mauder , Gerhard Schmidt
发明人： Reiner Barthelmess , Frank Pfirsch , Anton Mauder , Gerhard Schmidt
IPC分类号： H01L29861
CPC分类号： H01L29/405 , H01L29/66128 , H01L29/8611
摘要： A high-voltage diode and a method for producing the high-voltage diode involve only three masking steps. Only three masking steps are required due to the use of adjustment structures and of a chipping stopper with an edge passivation containing a-C:H or a-Si. In this manner, the high-voltage diode is inexpensive to manufacture. The diode has a rating for reverse voltages of, in particular, above about 400 V and preferably above about 500 V, and can be fabricated with the least possible process complexity and thus a small number of photo technologies and, in the edge region, can readily be equipped with a channel stopper for avoiding leakage currents and a chipping stopper for limiting the extent of saving defects.
摘要翻译：高压二极管和高压二极管的制造方法仅涉及三个掩模步骤。由于使用调节结构和具有含有-c：H或a-Si的边缘钝化的切屑塞，仅需要三个掩模步骤。以这种方式，高压二极管的制造便宜。二极管的反向电压的额定值尤其高于约400V，优选高于约500V，并且可以以最不可能的工艺复杂性制造，因此可以制造少量的照相技术，并且在边缘区域中容易配备有用于避免泄漏电流的通道止动器和用于限制挽救缺陷的程度的切屑止动器。

34. 发明授权

US06660569B1 Method for producing a power semiconductor device with a stop zone 有权
标题翻译：一种具有停止区域的功率半导体器件的制造方法
公开(公告)号：US06660569B1
公开(公告)日：2003-12-09
申请号：US09830326
申请日：2001-07-02
申请人： Reiner Barthelmess , Hans-Joachim Schulze
发明人： Reiner Barthelmess , Hans-Joachim Schulze
IPC分类号： H01L21332
CPC分类号： H01L29/7395 , H01L29/1016 , H01L29/7455 , H01L29/749 , Y10S438/92
摘要： A method of fabricating a silicon power semiconductor with a stop zone includes forming a stop zone by driving oxygen into a semiconductor substrate in a targeted manner and subsequently heating the oxygen with the semiconductor substrate to form thermal donors, and producing, at or near a surface of the semiconductor substrate, an increased oxygen concentration in comparison with other semiconductor regions by ion implantation.
摘要翻译：制造具有停止区域的硅功率半导体的方法包括：以目标方式将氧气驱动到半导体衬底中形成停止区域，随后用半导体衬底加热氧气以形成热供体，并在表面或附近产生通过离子注入与其他半导体区域相比增加了氧浓度。

35. 发明授权

US08034700B2 Method of fabricating a diode 有权
标题翻译：制造二极管的方法
公开(公告)号：US08034700B2
公开(公告)日：2011-10-11
申请号：US12648749
申请日：2009-12-29
申请人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Reiner Barthelmess
发明人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Reiner Barthelmess
IPC分类号： H01L21/22
CPC分类号： H01L29/861 , H01L21/263 , H01L21/3242 , H01L29/0661 , H01L29/36
摘要： A method of fabricating a diode is disclosed. One embodiment provides a semiconductor body having a front and a back, opposite the front in a vertical direction of the semiconductor body. The semiconductor body contains, successively in the vertical direction from the back to the front, a heavily n-doped zone, a weakly n-doped zone, a weakly p-doped zone and a heavily p-doped zone. In the vertical direction, the weakly p-doped zone has a thickness of at least 25% and at most 50% of the thickness of the semiconductor body.
摘要翻译：公开了制造二极管的方法。一个实施例提供一种半导体本体，该半导体本体具有与半导体本体的垂直方向相反的前部和后部。半导体本体从背面到前面的垂直方向依次包含高n掺杂区，弱n掺杂区，弱p掺杂区和高p掺杂区。在垂直方向上，弱p掺杂区的厚度为半导体本体厚度的至少25％且至多50％。

36. 发明授权

US07812368B2 High speed diode 有权
标题翻译：高速二极管
公开(公告)号：US07812368B2
公开(公告)日：2010-10-12
申请号：US11419919
申请日：2006-05-23
申请人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Reiner Barthelmess
发明人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Reiner Barthelmess
IPC分类号： H01L29/74
CPC分类号： H01L29/8611 , H01L29/0619 , H01L29/0692 , H01L29/32 , H01L29/66128
摘要： The invention relates to a high-speed diode comprising a semiconductor body (1), in which a heavily n-doped zone (8), a weakly n-doped zone (7) and a weakly p-doped zone (6) are arranged successively in a vertical direction (v), between which a pn load junction (4) is formed. A number of heavily p-doped islands (51-57) spaced apart from one another are arranged in the weakly p-doped zone (6). In this case, it is provided that the cross-sectional area density of the heavily p-doped islands (51-57) is smaller in a first area region (100) near to the edge than in a second area region (200) remote from the edge.
摘要翻译：本发明涉及一种包括半导体本体（1）的高速二极管，其中重度n掺杂区域（8），弱n掺杂区域（7）和弱p掺杂区域（6）被布置在垂直方向（v）上连续地形成pn负载接合部（4）。在弱p掺杂区域（6）中布置有彼此间隔开的多个重p掺杂岛（51-57）。在这种情况下，提供了在靠近边缘的第一区域区域（100）中，重p掺杂岛（51-57）的横截面积密度小于远离第二区域（200）的第二区域区域从边缘。

37. 发明授权

US07687826B2 Thyristor with recovery protection 有权
标题翻译：晶闸管具有恢复保护
公开(公告)号：US07687826B2
公开(公告)日：2010-03-30
申请号：US11463188
申请日：2006-08-08
申请人： Hans-Joachim Schulze , Franz Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
发明人： Hans-Joachim Schulze , Franz Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
IPC分类号： H01L29/74 , H01L31/111
CPC分类号： H01L31/1113 , H01L29/0692 , H01L29/083 , H01L29/7428
摘要： A main thyristor (1) has a recovery protection which is integrated into a drive thyristor (2) whose n-doped emitter (25) is electrically connected to a main thyristor control terminal (140). Moreover, the p-doped emitter (28) of the drive thyristor (2) is electrically connected to the p-doped emitter (18) of the main thyristor (1). Various optional measures for realizing a recovery protection are provided in this case. A method for producing a thyristor system having a main thyristor and a drive thyristor, the drive thyristor (2) having anode short circuits (211) involves introducing particles (230) into a target region (225) of the semiconductor body (200) of the drive thyristor (2), the distance between the target region (225) and a front side (201) of the semiconductor body (200) opposite to the rear side (202) being less than or equal to the distance between the p-doped emitter (28) and the front side (201).
摘要翻译：主晶闸管（1）具有集成到其n掺杂发射极（25）电连接到主晶闸管控制端子（140）的驱动晶闸管（2）的恢复保护。此外，驱动晶闸管（2）的p掺杂发射极（28）电连接到主晶闸管（1）的p掺杂发射极（18）。在这种情况下，提供了用于实现恢复保护的各种可选措施。一种制造具有主晶闸管和驱动晶闸管的晶闸管系统的方法，所述驱动晶闸管（2）具有阳极短路（211），包括将粒子（230）引入所述半导体本体（200）的目标区域（225）所述驱动晶闸管（2），所述半导体本体（200）的与所述后侧（202）相对的所述目标区域（225）与所述前侧（201）之间的距离小于或等于所述半导体本体掺杂发射极（28）和前侧（201）。

38. 发明授权

US07656011B2 Diode 有权
公开(公告)号：US07656011B2
公开(公告)日：2010-02-02
申请号：US11969017
申请日：2008-01-03
申请人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Reiner Barthelmess
发明人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Reiner Barthelmess
IPC分类号： H01L29/861 , H01L29/06
摘要： A diode is disclosed. One embodiment provides a semiconductor body having a front and a back, opposite the front in a vertical direction of the semiconductor body. The semiconductor body contains, successively in the vertical direction from the back to the front, a heavily n-doped zone, a weakly n-doped zone, a weakly p-doped zone and a heavily p-doped zone. In the vertical direction, the weakly p-doped zone has a thickness of at least 25% and at most 50% of the thickness of the semiconductor body.

39. 发明申请

US20080296774A1 ARRANGEMENT INCLUDING A SEMICONDUCTOR DEVICE AND A CONNECTING ELEMENT 有权
标题翻译：包括半导体器件和连接元件的布置
公开(公告)号：US20080296774A1
公开(公告)日：2008-12-04
申请号：US11756110
申请日：2007-05-31
申请人： Uwe Kellner-Werdehausen , Reiner Barthelmess , Hans-Joachim Schulze , Heinrich Gerstenkoeper , Ralf Joerke
发明人： Uwe Kellner-Werdehausen , Reiner Barthelmess , Hans-Joachim Schulze , Heinrich Gerstenkoeper , Ralf Joerke
IPC分类号： H01L23/52 , H01L21/60
CPC分类号： H01L23/051 , H01L24/72 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01029 , H01L2924/01033 , H01L2924/01042 , H01L2924/01047 , H01L2924/01079 , H01L2924/01082 , H01L2924/1301 , H01L2924/14 , H01L2924/351 , H01L2924/00
摘要： An integrated circuit and an arrangement including a semiconductor device and a connecting element and method for producing such an arrangement is disclosed. One embodiment provides a semiconductor element having a first contact face and a second contact face. The first contact face and the second contact face extend in a first lateral direction. An electrically conductive connecting element which has a third contact face electrically contacts the semiconductor element. The connecting element includes a trench system. A first trench of this trench system extends from the third contact face into the connecting element.
摘要翻译：公开了一种集成电路和包括半导体器件和连接元件的布置及其制造方法。一个实施例提供了具有第一接触面和第二接触面的半导体元件。第一接触面和第二接触面在第一横向延伸。导电连接元件，其具有与半导体元件电接触的第三接触面。连接元件包括沟槽系统。该沟槽系统的第一沟槽从第三接触面延伸到连接元件。

40. 发明授权

US06696705B1 Power semiconductor component having a mesa edge termination 有权
标题翻译：功率半导体元件具有台面边缘端接
公开(公告)号：US06696705B1
公开(公告)日：2004-02-24
申请号：US09660276
申请日：2000-09-12
申请人： Reiner Barthelmess , Gerhard Schmidt
发明人： Reiner Barthelmess , Gerhard Schmidt
IPC分类号： H01L29861
CPC分类号： H01L29/0661 , H01L29/0615 , H01L29/0834 , H01L29/7396 , H01L29/744 , H01L29/8613
摘要： A power semiconductor component having a mesa edge termination is described. The component has a semiconductor body with first and second surfaces. An inner zone of a first conductivity type is disposed in the semiconductor body. A first zone is disposed in the semiconductor body and is connected to the inner zone. An edge area outside of the first zone has areas etched out. A second zone of a second conductivity type is disposed in the semiconductor body and is connected to the inner zone, and a boundary area between the second zone and the inner zone defines a pn junction. A field stop zone is adjacent the first surface in the edge area. The field stop zone is formed of the first conductivity type and is embedded in the semiconductor body, and the field stop zone is connected to the first zone and to the inner zone.
摘要翻译：描述具有台面边缘终止的功率半导体部件。该部件具有带有第一和第二表面的半导体本体。第一导电类型的内部区域设置在半导体本体中。第一区域设置在半导体本体中并且连接到内部区域。第一区域之外的边缘区域被蚀刻出来。第二导电类型的第二区域设置在半导体本体中并且连接到内部区域，并且第二区域和内部区域之间的边界区域限定了pn结。边界区域的第一个表面附近设有一个停止区域。场阻挡区由第一导电类型形成，并且嵌入在半导体本体中，并且场停止区域连接到第一区域和内部区域。

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