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1. 发明公开

US20240038880A1 BIDIRECTIONAL THYRISTOR DEVICE 审中-公开
公开(公告)号：US20240038880A1
公开(公告)日：2024-02-01
申请号：US18038652
申请日：2021-11-22
申请人： Hitachi Energy Switzerland AG
发明人： Jan VOBECKY , Umamaheswara VEMULAPATI
IPC分类号： H01L29/747 , H01L29/06 , H01L29/74
CPC分类号： H01L29/747 , H01L29/0692 , H01L29/7428
摘要： A bidirectional thyristor device (1) comprising a semiconductor body (2) extending between a first main surface (21) and a second main surface (22), is provided wherein a first main electrode (31) and a first gate electrode (41) are arranged on the first main surface and a second main electrode (32) and a second gate electrode (42) are arranged on the second main surface. The first main electrode comprises a plurality of first segments (310) that are spaced apart from one another, wherein at least some of the first segments are completely surrounded by the first gate electrode in a view onto the first main surface. The second main electrode comprises a plurality of second segments (320) that are spaced apart from one another, wherein at least some of the second segments are completely surrounded by the second gate electrode in a view onto the second main surface.

2. 发明申请

US20170243966A1 PHASE CONTROL THYRISTOR 审中-公开
公开(公告)号：US20170243966A1
公开(公告)日：2017-08-24
申请号：US15421128
申请日：2017-01-31
申请人： ABB Schweiz AG
发明人： Marco Bellini , Jan Vobecky
IPC分类号： H01L29/74 , H01L29/66 , H01L29/08
CPC分类号： H01L29/7428 , H01L29/0839 , H01L29/66363 , H01L29/74
摘要： A thyristor, in particular a phase control thyristor, is disclosed with comprises: a) a semiconductor slab, in particular a semiconductor wave or die, in which a thyristor structure is formed, b) a cathode metallization formed on a cathode region on a cathode side surface of the semiconductor slab, c) a gate metallization formed on a gate region on the cathode side surface of the semiconductor slab, d) a plurality of N discrete emitter shorts, arranged at points Pi in the cathode region, said points having point locations xi, with iε{1; . . . ; N}, e) the points Pl defining a Delaunay triangulation comprising a plurality of triangles Tj with jε{1; . . . ; M), wherein f) for a first subset of triangles Tl with lεS1⊂{1; . . . ; M), g) with each triangle Tl being characterized by a geometric quantity having values qT,l with lεS1⊂{1; . . . ; M), said geometric quantity having a mean value μ, and i) a coefficient of variation of the values qT,l with lεS1 is smaller than 0.1, preferably smaller than 0.05, and/or ii) an absolute value of a skewedness of the geometric quantities qT,l with lεS1 is smaller than 5, preferably smaller than 1, and/or iii) a Kurtosis of the geometric quantities qT,l with lεS1 is smaller than 20, preferably smaller than 10, and h) for a second subset of triangles Tm with mεS2⊂S1, for which the respective geometric quantities qT,m with mεS2 deviate from the mean value by more than a predetermined amount, in particular by more than 30%, (1) a quotient of a standard deviation of the quantities qT,m with mεS2 and a mean squared value of the geometric quantity qT,l with lεS1 is less than 1 or less than 0.1, and/or a quotient of a number of triangles in the second subset and a number of triangles in the first subset is less than

3. 发明授权

US09508711B2 Semiconductor device with bipolar junction transistor cells 有权
标题翻译：具有双极结型晶体管单元的半导体器件
公开(公告)号：US09508711B2
公开(公告)日：2016-11-29
申请号：US14096338
申请日：2013-12-04
申请人： Infineon Technologies AG
发明人： Jens Peter Konrath , Hans-Joachim Schulze
IPC分类号： H01L21/8222 , H01L27/082 , H01L29/08 , H01L29/10 , H01L27/06 , H01L29/66 , H01L29/732 , H01L29/74 , H01L29/16
CPC分类号： H01L27/0823 , H01L27/0664 , H01L29/0804 , H01L29/1004 , H01L29/1608 , H01L29/41708 , H01L29/66068 , H01L29/66272 , H01L29/66363 , H01L29/732 , H01L29/7428
摘要： A semiconductor device includes a bipolar junction transistor cell including an emitter region which is at least partly formed between mesas of a semiconductor body. The emitter region extends between a first surface of the semiconductor body and an emitter bottom plane. The transistor cell further includes a collector region and a base region that separates the emitter region and the collector region.
摘要翻译：半导体器件包括双极结型晶体管单元，其包括至少部分地形成在半导体主体的台面之间的发射极区域。发射极区域在半导体本体的第一表面和发射极底面之间延伸。晶体管单元还包括集电极区域和分离发射极区域和集电极区域的基极区域。

4. 发明申请

US20160133777A1 Optically Assist-Triggered Wide Bandgap Thyristors Having Positive Temperature Coefficients 审中-公开
标题翻译：具有正温度系数的光学辅助触发宽带隙晶闸管
公开(公告)号：US20160133777A1
公开(公告)日：2016-05-12
申请号：US14922809
申请日：2015-10-26
申请人： Cree, Inc.
发明人： Qingchun Zhang
IPC分类号： H01L31/111 , H01L27/144 , H01L29/16 , H01L31/0312
CPC分类号： H01L31/1113 , H01L27/1443 , H01L29/1608 , H01L29/7428 , H01L31/0312
摘要： A thyristor includes a first conductivity type semiconductor layer, a first conductivity type carrier injection layer on the semiconductor layer, a second conductivity type drill layer on the carrier injection layer, a first conductivity type base layer on the drift layer, and a second conductivity type anode region on the base layer. The thickness and doping concentration of the carrier injection layer are selected to reduce minority carrier injection by the carrier injection layer in response to an increase in operating temperature of the thyristor. A cross-over current density at which the thyristor shifts from a negative temperature coefficient of forward voltage to a positive temperature coefficient of forward voltage is thereby reduced.
摘要翻译：晶闸管包括第一导电类型半导体层，半导体层上的第一导电类型载流子注入层，载流子注入层上的第二导电类型钻层，漂移层上的第一导电型基底层和第二导电类型阳极区域。选择载流子注入层的厚度和掺杂浓度以响应于晶闸管的工作温度的升高来减少载流子注入层的少数载流子注入。因此，晶闸管从正向电压的负温度系数向正向电压的正温度系数偏移的交叉电流密度降低。

5. 发明申请

US20150155279A1 Semiconductor Device with Bipolar Junction Transistor Cells 有权
标题翻译：具有双极结晶体管电池的半导体器件
公开(公告)号：US20150155279A1
公开(公告)日：2015-06-04
申请号：US14096338
申请日：2013-12-04
申请人： Infineon Technologies AG
发明人： Jens Peter Konrath , Hans-Joachim Schulze
IPC分类号： H01L27/082 , H01L21/8222 , H01L21/02 , H01L29/10 , H01L27/06 , H01L29/16 , H01L29/08
CPC分类号： H01L27/0823 , H01L27/0664 , H01L29/0804 , H01L29/1004 , H01L29/1608 , H01L29/41708 , H01L29/66068 , H01L29/66272 , H01L29/66363 , H01L29/732 , H01L29/7428
摘要： A semiconductor device includes a bipolar junction transistor cell including an emitter region which is at least partly formed between mesas of a semiconductor body. The emitter region extends between a first surface of the semiconductor body and an emitter bottom plane. The transistor cell further includes a collector region and a base region that separates the emitter region and the collector region.
摘要翻译：半导体器件包括双极结型晶体管单元，其包括至少部分地形成在半导体主体的台面之间的发射极区域。发射极区域在半导体本体的第一表面和发射极底面之间延伸。晶体管单元还包括集电极区域和分离发射极区域和集电极区域的基极区域。

6. 发明申请

US20130105855A1 GATE AMPLIFICATION TRIAC 有权
标题翻译：门式放大器TRIAC
公开(公告)号：US20130105855A1
公开(公告)日：2013-05-02
申请号：US13658670
申请日：2012-10-23
申请人： Yannick Hague
发明人： Yannick Hague
IPC分类号： H01L29/747
CPC分类号： H01L29/747 , H01L29/0638 , H01L29/0692 , H01L29/7428
摘要： A gate amplification triac including in a semiconductor substrate of a first conductivity type a vertical triac and a lateral bipolar transistor having its emitter connected to the triac gate, its base connected to a control terminal, and its collector connected to a terminal intended to be connected to a first reference voltage, the main terminal of the triac on the side of the transistor being intended to be connected to a second reference voltage, the transistor being formed in a first well of the second conductivity type and the triac comprising on the transistor side a second well of the second conductivity type, the first and second wells being formed so that the substrate-well breakdown voltage of the transistor is greater than the substrate-well breakdown voltage of the triac by at least the difference between the first and second reference voltages.
摘要翻译：一种栅极放大三端双向可控硅开关元件，包括在第一导电类型的半导体衬底中的垂直三端双向可控硅开关元件和横向双极晶体管，其发射极连接到三端双向可控硅开关栅极，其基极连接到控制端子，并且其集电极连接到要连接的端子在第一参考电压下，晶体管侧面上的三端双向可控硅开关的主端子将被连接到第二参考电压，晶体管形成在第二导电类型的第一阱中，并且三端双向可控硅开关元件包括在晶体管侧第二导电类型的第二阱，第一阱和第二阱形成为使得晶体管的衬底井击穿电压大于三端双向可控硅开关元件的衬底 - 阱击穿电压至少第一和第二参考点之间的差值电压。

7. 发明授权

US07696528B2 Thyristor which can be triggered electrically and by radiation 有权
标题翻译：可触发电子和辐射的晶闸管
公开(公告)号：US07696528B2
公开(公告)日：2010-04-13
申请号：US11561985
申请日：2006-11-21
申请人： Uwe Kellner-Werdehausen , Franz-Josef Niedernostheide , Hans-Joachim Schulze , Jörg Dorn
发明人： Uwe Kellner-Werdehausen , Franz-Josef Niedernostheide , Hans-Joachim Schulze , Jörg Dorn
IPC分类号： H01L29/74
CPC分类号： H01L31/1113 , H01L29/0626 , H01L29/102 , H01L29/7408 , H01L29/7424 , H01L29/7428
摘要： A thyristor has a radiation-sensitive breakdown structure (20), a gate electrode (92) that is placed at a distance from the latter in a lateral direction and an ignition stage structure having at least one ignition stage (51, 91) equipped with an n-doped auxiliary emitter (51), which forms a pn-junction (55) together with the p-doped base (6), the thyristor being both electrically and radiation-ignited. In a method for contacting a thyristor that can be ignited by radiation with a gate electrode (92), a contact ram (200) that is adapted to the geometry of the gate electrode (92) is pressed against the thyristor. In a method for monitoring the ignition of a thyristor that is ignited by incident radiation, the electric voltage that is applied to the gate electrode (92) or the electrically conductive electrode (105, 201) is monitored.
摘要翻译：晶闸管具有辐射敏感击穿结构（20），在横向方向上与后者放置一定距离的栅电极（92）和具有至少一个点火台（51,91）的点火台结构 n掺杂的辅助发射器（51）与p掺杂的基极（6）一起形成pn结（55），所述晶闸管是电的和辐射的。在使栅极电极（92）能够被辐射点燃的晶闸管接触的方法中，适合于栅电极（92）的几何形状的接触柱塞（200）被压靠在晶闸管上。在监视由入射辐射点燃的晶闸管的点火的方法中，监视施加到栅电极（92）或导电电极（105,201）的电压。

8. 发明授权

US07262442B2 Triac operating in quadrants Q1 and Q4 有权
标题翻译： Triac在象限Q1和Q4中运行
公开(公告)号：US07262442B2
公开(公告)日：2007-08-28
申请号：US11013972
申请日：2004-12-16
申请人： Samuel Menard
发明人： Samuel Menard
IPC分类号： H01L29/74
CPC分类号： H01L29/7428 , H01L29/747
摘要： A triac including on its front surface side an autonomous starting well of the first conductivity type containing a region of the second conductivity type arranged to divide it, in top view, into a first and a second well portion, the first portion being connected to a control terminal and the second portion being connected with said region to the main front surface terminal.
摘要翻译：三端双向可控硅开关元件包括在其前表面侧具有第一导电类型的自主启动阱，其包含第二导电类型的区域，其布置成在顶视图中将其分为第一和第二阱部分，第一部分连接到控制端子和第二部分与所述区域连接到主正面端子。

9. 发明申请

US20070131963A1 Thyristor Which Can Be Triggered Electrically And By Radiation, And Methods For Making Contact With It 有权
标题翻译：可触发的晶闸管电子和辐射，以及与之接触的方法
公开(公告)号：US20070131963A1
公开(公告)日：2007-06-14
申请号：US11561985
申请日：2006-11-21
申请人： Uwe Kellner-Werdehausen , Franz-Josef Niedernostheide , Hans-Joachim Schulze , Jorg Dorn
发明人： Uwe Kellner-Werdehausen , Franz-Josef Niedernostheide , Hans-Joachim Schulze , Jorg Dorn
IPC分类号： H01L29/74
CPC分类号： H01L31/1113 , H01L29/0626 , H01L29/102 , H01L29/7408 , H01L29/7424 , H01L29/7428
摘要： A thyristor has a radiation-sensitive breakdown structure (20), a gate electrode (92) that is placed at a distance from the latter in a lateral direction and an ignition stage structure having at least one ignition stage (51, 91) equipped with an n-doped auxiliary emitter (51), which forms a pn-junction (55) together with the p-doped base (6), the thyristor being both electrically and radiation-ignited. In a method for contacting a thyristor that can be ignited by radiation with a gate electrode (92), a contact ram (200) that is adapted to the geometry of the gate electrode (92) is pressed against the thyristor. In a method for monitoring the ignition of a thyristor that is ignited by incident radiation, the electric voltage that is applied to the gate electrode (92) or the electrically conductive electrode (105, 201) is monitored.
摘要翻译：晶闸管具有辐射敏感击穿结构（20），在横向方向上与后者放置一定距离的栅电极（92）和具有至少一个点火台（51,91）的点火台结构 n掺杂的辅助发射器（51）与p掺杂的基极（6）一起形成pn结（55），所述晶闸管是电的和辐射的。在使栅极电极（92）能够被辐射点燃的晶闸管接触的方法中，适合于栅电极（92）的几何形状的接触柱塞（200）被压靠在晶闸管上。在监视由入射辐射点燃的晶闸管的点火的方法中，监视施加到栅电极（92）或导电电极（105,201）的电压。

10. 发明授权

US5861639A Breakover-triggered dipole component having a controlled sensitivity 失效
标题翻译：具有受控灵敏度的分解触发偶极子分量
公开(公告)号：US5861639A
公开(公告)日：1999-01-19
申请号：US880856
申请日：1997-06-23
申请人： Eric Bernier
发明人： Eric Bernier
IPC分类号： F23Q3/00 , H01L21/822 , H01L27/06 , H01L29/74 , H01L29/747 , H01L29/861
CPC分类号： H01L29/7416 , H01L29/7404 , H01L29/7428 , H01L29/747
摘要： A dipole component with a controlled breakover sensitivity includes a main thyristor having its gate connected to its anode through a pilot thyristor, and a triggering transistor disposed in parallel with the pilot thyristor, the base of the triggering transistor being connected to the gate of the pilot thyristor.
摘要翻译：具有受控制的跳转灵敏度的偶极子分量包括其栅极通过导频晶闸管连接到其阳极的主晶闸管，以及与导频晶闸管并联设置的触发晶体管，触发晶体管的基极连接到导频的栅极晶闸管

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