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1. 发明申请

US20090140290A1 SEMICONDUCTOR COMPONENT INCLUDING A SHORT-CIRCUIT STRUCTURE 有权
标题翻译：包含短路结构的半导体元件
公开(公告)号：US20090140290A1
公开(公告)日：2009-06-04
申请号：US12324309
申请日：2008-11-26
申请人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
发明人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
IPC分类号： H01L29/74 , H01L21/332
CPC分类号： H01L27/0255 , H01L21/324 , H01L27/1027 , H01L29/0692 , H01L29/083 , H01L29/0834 , H01L29/0839 , H01L29/1012 , H01L29/1016 , H01L29/165 , H01L29/167 , H01L29/36 , H01L29/66136 , H01L29/66363 , H01L29/7395 , H01L29/7428 , H01L29/861 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component including a short-circuit structure. One embodiment provides a semiconductor component having a semiconductor body composed of doped semiconductor material. The semiconductor body includes a first zone of a first conduction type and a second zone of a second conduction type, complementary to the first conduction type, the second zone adjoining the first zone. The first zone and the second zone are coupled to an electrically highly conductive layer. A connection zone of the second conduction type is arranged between the second zone and the electrically highly conductive layer.
摘要翻译：包括短路结构的半导体部件。一个实施例提供了具有由掺杂半导体材料构成的半导体本体的半导体部件。半导体本体包括与第一导电类型互补的第一导电类型的第一区和第二导电类型的第二区，与第一区相邻的第二区。第一区域和第二区域耦合到高度导电的层。第二导电类型的连接区域布置在第二区域和导电层之间。

2. 发明授权

US07687826B2 Thyristor with recovery protection 有权
标题翻译：晶闸管具有恢复保护
公开(公告)号：US07687826B2
公开(公告)日：2010-03-30
申请号：US11463188
申请日：2006-08-08
申请人： Hans-Joachim Schulze , Franz Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
发明人： Hans-Joachim Schulze , Franz Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
IPC分类号： H01L29/74 , H01L31/111
CPC分类号： H01L31/1113 , H01L29/0692 , H01L29/083 , H01L29/7428
摘要： A main thyristor (1) has a recovery protection which is integrated into a drive thyristor (2) whose n-doped emitter (25) is electrically connected to a main thyristor control terminal (140). Moreover, the p-doped emitter (28) of the drive thyristor (2) is electrically connected to the p-doped emitter (18) of the main thyristor (1). Various optional measures for realizing a recovery protection are provided in this case. A method for producing a thyristor system having a main thyristor and a drive thyristor, the drive thyristor (2) having anode short circuits (211) involves introducing particles (230) into a target region (225) of the semiconductor body (200) of the drive thyristor (2), the distance between the target region (225) and a front side (201) of the semiconductor body (200) opposite to the rear side (202) being less than or equal to the distance between the p-doped emitter (28) and the front side (201).
摘要翻译：主晶闸管（1）具有集成到其n掺杂发射极（25）电连接到主晶闸管控制端子（140）的驱动晶闸管（2）的恢复保护。此外，驱动晶闸管（2）的p掺杂发射极（28）电连接到主晶闸管（1）的p掺杂发射极（18）。在这种情况下，提供了用于实现恢复保护的各种可选措施。一种制造具有主晶闸管和驱动晶闸管的晶闸管系统的方法，所述驱动晶闸管（2）具有阳极短路（211），包括将粒子（230）引入所述半导体本体（200）的目标区域（225）所述驱动晶闸管（2），所述半导体本体（200）的与所述后侧（202）相对的所述目标区域（225）与所述前侧（201）之间的距离小于或等于所述半导体本体掺杂发射极（28）和前侧（201）。

3. 发明授权

US08415710B2 Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method 有权
标题翻译：双极性功率半导体元件包括p型发射极和p型发射极中较高掺杂的区域，以及制造方法
公开(公告)号：US08415710B2
公开(公告)日：2013-04-09
申请号：US13022386
申请日：2011-02-07
申请人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
发明人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
IPC分类号： H01L29/74
CPC分类号： H01L29/7397 , H01L29/0696 , H01L29/66363 , H01L29/7428
摘要： A bipolar power semiconductor component configured as an IGBT includes a semiconductor body, in which a p-doped emitter, an n-doped base, a p-doped base and an n-doped main emitter are arranged successively in a vertical direction. The p-doped emitter has a number of heavily p-doped zones having a locally increased p-type doping.
摘要翻译：配置为IGBT的双极性功率半导体元件包括半导体本体，其中p掺杂发射极，n掺杂基极，p掺杂基极和n掺杂主发射极在垂直方向上连续布置。 p掺杂发射极具有多个具有局部增加的p型掺杂的高p掺杂区。

4. 发明申请

US20110127576A1 Bipolar Power Semiconductor Component Comprising a P-type Emitter and More Highly Doped Zones in the P-type Emitter, and Production Method 有权
标题翻译：包含P型发射极和P型发射极中更高掺杂区的双极功率半导体元件及生产方法
公开(公告)号：US20110127576A1
公开(公告)日：2011-06-02
申请号：US13022386
申请日：2011-02-07
申请人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
发明人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
IPC分类号： H01L29/74 , H01L21/332
CPC分类号： H01L29/7397 , H01L29/0696 , H01L29/66363 , H01L29/7428
摘要： A bipolar power semiconductor component configured as an IGBT includes a semiconductor body, in which a p-doped emitter, an n-doped base, a p-doped base and an n-doped main emitter are arranged successively in a vertical direction. The p-doped emitter has a number of heavily p-doped zones having a locally increased p-type doping.
摘要翻译：配置为IGBT的双极性功率半导体元件包括半导体本体，其中p掺杂发射极，n掺杂基极，p掺杂基极和n掺杂主发射极在垂直方向上连续布置。 p掺杂发射极具有多个具有局部增加的p型掺杂的高p掺杂区。

5. 发明申请

US20070215981A1 Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method 有权
标题翻译：双极性功率半导体元件包括p型发射极和p型发射极中较高掺杂的区域，以及制造方法
公开(公告)号：US20070215981A1
公开(公告)日：2007-09-20
申请号：US11651937
申请日：2007-01-10
申请人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
发明人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
IPC分类号： H01L27/082 , H01L27/102 , H01L29/70 , H01L31/11
CPC分类号： H01L29/7397 , H01L29/0696 , H01L29/66363 , H01L29/7428
摘要： Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method The invention relates to a bipolar power semiconductor component comprising a semiconductor body (1), in which a p-doped emitter (8), an n-doped base (7), a p-doped base (6) and an n-doped main emitter (5) are arranged successively in a vertical direction (v). The p-doped emitter (8) has a number of heavily p-doped zones (82) having a locally increased p-type doping. The invention furthermore relates to a method for producing a power semiconductor component.
摘要翻译：双极性功率半导体元件包括p型发射极和p型发射极中的更高掺杂区及其制造方法技术领域本发明涉及一种双极型功率半导体元件，其包括半导体本体（1），其中p掺杂发射极 8）中，在垂直方向（v）上依次布置n掺杂基极（7），p掺杂基极（6）和n掺杂主发射极（5）。 p掺杂发射极（8）具有多个具有局部增加的p型掺杂的高p掺杂区（82）。本发明还涉及一种用于制造功率半导体部件的方法。

6. 发明授权

US09269769B2 Semiconductor component including a short-circuit structure 有权
标题翻译：半导体元件包括短路结构
公开(公告)号：US09269769B2
公开(公告)日：2016-02-23
申请号：US12324309
申请日：2008-11-26
申请人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
发明人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
IPC分类号： H01L29/06 , H01L29/08 , H01L29/165 , H01L29/66 , H01L29/739 , H01L29/74
CPC分类号： H01L27/0255 , H01L21/324 , H01L27/1027 , H01L29/0692 , H01L29/083 , H01L29/0834 , H01L29/0839 , H01L29/1012 , H01L29/1016 , H01L29/165 , H01L29/167 , H01L29/36 , H01L29/66136 , H01L29/66363 , H01L29/7395 , H01L29/7428 , H01L29/861 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component including a short-circuit structure. One embodiment provides a semiconductor component having a semiconductor body composed of doped semiconductor material. The semiconductor body includes a first zone of a first conduction type and a second zone of a second conduction type, complementary to the first conduction type, the second zone adjoining the first zone. The first zone and the second zone are coupled to an electrically highly conductive layer. A connection zone of the second conduction type is arranged between the second zone and the electrically highly conductive layer.
摘要翻译：包括短路结构的半导体部件。一个实施例提供了具有由掺杂半导体材料构成的半导体本体的半导体部件。半导体本体包括与第一导电类型互补的第一导电类型的第一区和第二导电类型的第二区，与第一区相邻的第二区。第一区域和第二区域耦合到高度导电的层。第二导电类型的连接区域布置在第二区域和导电层之间。

7. 发明授权

US07884389B2 Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method 有权
标题翻译：双极性功率半导体元件包括p型发射极和p型发射极中较高掺杂的区域，以及制造方法
公开(公告)号：US07884389B2
公开(公告)日：2011-02-08
申请号：US11651937
申请日：2007-01-10
申请人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
发明人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
IPC分类号： H01L29/74
CPC分类号： H01L29/7397 , H01L29/0696 , H01L29/66363 , H01L29/7428
摘要： Bipolar power semiconductor component comprising a p-type emitter and more highly doped zones in the p-type emitter, and production method. The invention relates to a bipolar power semiconductor component comprising a semiconductor body (1), in which a p-doped emitter (8), an n-doped base (7), a p-doped base (6) and an n-doped main emitter (5) are arranged successively in a vertical direction (v). The p-doped emitter (8) has a number of heavily p-doped zones (82) having a locally increased p-type doping.
摘要翻译：双极性功率半导体元件包括p型发射极和p型发射极中较高掺杂的区域，以及制造方法。本发明涉及一种双极功率半导体元件，包括半导体本体（1），其中p掺杂发射极（8），n掺杂基极（7），p掺杂基极（6）和n掺杂主发射器（5）沿垂直方向（v）连续布置。 p掺杂发射极（8）具有多个具有局部增加的p型掺杂的高p掺杂区（82）。

8. 发明申请

US20090057714A1 THYRISTOR AND METHODS FOR PRODUCING A THYRISTOR 审中-公开
标题翻译： THYRISTOR AND METHODS FOR PRODUCY THYRISTOR
公开(公告)号：US20090057714A1
公开(公告)日：2009-03-05
申请号：US12200331
申请日：2008-08-28
申请人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
发明人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
IPC分类号： H01L21/332 , H01L29/76
CPC分类号： H01L29/7428 , H01L24/72 , H01L29/0692 , H01L29/1608 , H01L29/66363 , H01L2224/48491
摘要： A thyristor having a semiconductor body in which a p-doped emitter, an n-doped base, a p-doped base and an n-doped main emitter are arranged successively in a vertical direction starting from a rear face toward a front face. For buffering of the transient heating, a metallization is applied to the front face and/or to the rear face and includes at least one first section which has an area-specific heat capacity of more than 50 J·K−1·m−2 at each point.
摘要翻译：具有半导体主体的晶闸管，其中p型掺杂的发射极，n掺杂的基极，p掺杂的基极和n掺杂的主发射极在从背面向前表面的垂直方向上连续布置。为了缓冲瞬时加热，金属化被施加到前表面和/或后表面，并且包括至少一个第一部分，每个第一部分在每个部分具有大于50JK-1.m-2的面积比热容点。

9. 发明申请

US20050258448A1 Thyristor component with improved blocking capabilities in the reverse direction 审中-公开
标题翻译：晶闸管组件在相反方向具有改进的阻挡能力
公开(公告)号：US20050258448A1
公开(公告)日：2005-11-24
申请号：US11116919
申请日：2005-04-28
申请人： Reiner Barthelmess , Uwe Kellner-Werdehausen , Franz-Josef Niedernostheide , Hans-Joachim Schulze
发明人： Reiner Barthelmess , Uwe Kellner-Werdehausen , Franz-Josef Niedernostheide , Hans-Joachim Schulze
IPC分类号： H01L29/06 , H01L29/10 , H01L29/74
CPC分类号： H01L29/74 , H01L29/0615 , H01L29/0619 , H01L29/0638 , H01L29/0661 , H01L29/102
摘要： A thyristor comprises a semiconductor body with a front and back face, an edge, a first semiconductor zone, embodied in the region of the rear face and a second semiconductor zone, adjacent to the first semiconductor zone, whereby the edge has a bevelled embodiment in the region of the transition between the first and second semiconductor zones, at least one third semiconductor zone, arranged in the region of the front face of the semiconductor body and at least one fourth semiconductor zone, arranged between the at least one third semiconductor zone and the second semiconductor zone. The fourth semiconductor zone terminates before the edge in the lateral direction of the semiconductor body, in order to reduce the amplification of a parasitic bipolar transistor formed in the region of the edge by the fourth semiconductor zone, the second semiconductor zone and the first semiconductor zone.
摘要翻译：晶闸管包括具有正面和背面的半导体本体，边缘，在背面的区域中实施的第一半导体区域和与第一半导体区域相邻的第二半导体区域，由此边缘具有倾斜的实施例在第一和第二半导体区域之间的过渡区域，布置在半导体主体的前表面的区域中的至少一个第三半导体区域和至少一个第四半导体区域，布置在至少一个第三半导体区域和第二个半导体区。第四半导体区域在半导体本体的横向方向上的边缘之前终止，以便减少由第四半导体区域，第二半导体区域和第一半导体区域在边缘区域中形成的寄生双极晶体管的放大率。

10. 发明申请

US20060267104A1 Thyristor with integrated resistance and method for producing it 审中-公开
标题翻译：具有集成电阻的晶闸管及其制造方法
公开(公告)号：US20060267104A1
公开(公告)日：2006-11-30
申请号：US11315976
申请日：2005-12-21
申请人： Detlef Scholz , Uwe Kellner-Werdehausen , Franz-Josef Niedernostheide , Hans-Joachim Schulze , Carsten Schneider
发明人： Detlef Scholz , Uwe Kellner-Werdehausen , Franz-Josef Niedernostheide , Hans-Joachim Schulze , Carsten Schneider
IPC分类号： H01L29/76
CPC分类号： H01L29/7424 , H01L23/051 , H01L29/7408 , H01L2924/0002 , H01L2924/00
摘要： A thyristor has a semiconductor body (1), in which a p-doped emitter (8), an n-doped base (7), a p-doped base (6) and an n-doped main emitter (5) are arranged successively in a vertical direction, the p-doped base (6) having a resistance zone (65) with a predetermined electrical resistance (R.int) extending in a lateral direction (r) perpendicular to the vertical direction, an external resistor (30, R.ext) that is arranged or can be arranged outside the semiconductor body (1) being electrically connected in parallel with the resistance zone (65), and the external resistor (30) having, in a specific temperature range, a temperature coefficient whose magnitude is less than the magnitude of the temperature coefficient of the resistance zone (65) in the specific temperature range.
摘要翻译：晶闸管具有半导体本体（1），其中配置p掺杂发射极（8），n掺杂基极（7），p掺杂基极（6）和n掺杂主发射极（5）具有在垂直于垂直方向的横向方向（r）延伸的具有预定电阻（R.int）的电阻区（65）的p掺杂基底（6），外部电阻器（30），Rext）布置或布置在半导体本体（1）的外部，与电阻区（65）并联电连接，外部电阻器（30）在特定温度范围内具有温度系数其大小小于特定温度范围内电阻区（65）的温度系数的大小。

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