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1. 发明授权

US06696705B1 Power semiconductor component having a mesa edge termination 有权
标题翻译：功率半导体元件具有台面边缘端接
公开(公告)号：US06696705B1
公开(公告)日：2004-02-24
申请号：US09660276
申请日：2000-09-12
申请人： Reiner Barthelmess , Gerhard Schmidt
发明人： Reiner Barthelmess , Gerhard Schmidt
IPC分类号： H01L29861
CPC分类号： H01L29/0661 , H01L29/0615 , H01L29/0834 , H01L29/7396 , H01L29/744 , H01L29/8613
摘要： A power semiconductor component having a mesa edge termination is described. The component has a semiconductor body with first and second surfaces. An inner zone of a first conductivity type is disposed in the semiconductor body. A first zone is disposed in the semiconductor body and is connected to the inner zone. An edge area outside of the first zone has areas etched out. A second zone of a second conductivity type is disposed in the semiconductor body and is connected to the inner zone, and a boundary area between the second zone and the inner zone defines a pn junction. A field stop zone is adjacent the first surface in the edge area. The field stop zone is formed of the first conductivity type and is embedded in the semiconductor body, and the field stop zone is connected to the first zone and to the inner zone.
摘要翻译：描述具有台面边缘终止的功率半导体部件。该部件具有带有第一和第二表面的半导体本体。第一导电类型的内部区域设置在半导体本体中。第一区域设置在半导体本体中并且连接到内部区域。第一区域之外的边缘区域被蚀刻出来。第二导电类型的第二区域设置在半导体本体中并且连接到内部区域，并且第二区域和内部区域之间的边界区域限定了pn结。边界区域的第一个表面附近设有一个停止区域。场阻挡区由第一导电类型形成，并且嵌入在半导体本体中，并且场停止区域连接到第一区域和内部区域。

2. 发明授权

US06770917B2 High-voltage diode 有权
标题翻译：高压二极管
公开(公告)号：US06770917B2
公开(公告)日：2004-08-03
申请号：US10395425
申请日：2003-03-24
申请人： Reiner Barthelmess , Frank Pfirsch , Anton Mauder , Gerhard Schmidt
发明人： Reiner Barthelmess , Frank Pfirsch , Anton Mauder , Gerhard Schmidt
IPC分类号： H01L29861
CPC分类号： H01L29/405 , H01L29/66128 , H01L29/8611
摘要： A high-voltage diode and a method for producing the high-voltage diode involve only three masking steps. Only three masking steps are required due to the use of adjustment structures and of a chipping stopper with an edge passivation containing a-C:H or a-Si. In this manner, the high-voltage diode is inexpensive to manufacture. The diode has a rating for reverse voltages of, in particular, above about 400 V and preferably above about 500 V, and can be fabricated with the least possible process complexity and thus a small number of photo technologies and, in the edge region, can readily be equipped with a channel stopper for avoiding leakage currents and a chipping stopper for limiting the extent of saving defects.
摘要翻译：高压二极管和高压二极管的制造方法仅涉及三个掩模步骤。由于使用调节结构和具有含有-c：H或a-Si的边缘钝化的切屑塞，仅需要三个掩模步骤。以这种方式，高压二极管的制造便宜。二极管的反向电压的额定值尤其高于约400V，优选高于约500V，并且可以以最不可能的工艺复杂性制造，因此可以制造少量的照相技术，并且在边缘区域中容易配备有用于避免泄漏电流的通道止动器和用于限制挽救缺陷的程度的切屑止动器。

3. 发明授权

US07749876B2 Method for the production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone 有权
标题翻译：一种用于在半导体部件和半导体部件中制造掩埋停止区域的方法，该半导体部件包括掩埋停止区域
公开(公告)号：US07749876B2
公开(公告)日：2010-07-06
申请号：US12039173
申请日：2008-02-28
申请人： Reiner Barthelmess , Anton Mauder , Franz-Josef Niedernostheide , Hans-Joachim Schulze
发明人： Reiner Barthelmess , Anton Mauder , Franz-Josef Niedernostheide , Hans-Joachim Schulze
IPC分类号： H01L21/266
CPC分类号： H01L29/7802 , H01L21/263 , H01L29/0878 , H01L29/167 , H01L29/32 , H01L29/36 , H01L29/66136 , H01L29/66333 , H01L29/66712 , H01L29/7395 , H01L29/861
摘要： According to one embodiment, a method for the production of a stop zone in a doped zone of a semiconductor body comprises irradiating the semiconductor body with particle radiation in order to produce defects in a crystal lattice of the semiconductor body. The semiconductor body is exposed to an environment containing dopant atoms, during which dopant atoms are indiffused into the semiconductor body at an elevated temperature.
摘要翻译：根据一个实施例，在半导体主体的掺杂区域中制造停止区域的方法包括用半导体主体照射半导体主体以产生半导体本体的晶格缺陷。将半导体体暴露于含有掺杂剂原子的环境中，在该环境中掺杂剂原子在升高的温度下扩散到半导体本体中。

4. 发明授权

US07667297B2 Method for producing a stop zone in a semiconductor body and semiconductor component having a stop zone 有权
标题翻译：用于在半导体本体中制造阻挡区域的方法和具有停止区域的半导体部件
公开(公告)号：US07667297B2
公开(公告)日：2010-02-23
申请号：US11423026
申请日：2006-06-08
申请人： Reiner Barthelmess , Anton Mauder , Franz Josef Niedernostheide , Hans-Joachim Schulze
发明人： Reiner Barthelmess , Anton Mauder , Franz Josef Niedernostheide , Hans-Joachim Schulze
IPC分类号： H01L29/167 , H01L29/30
CPC分类号： H01L29/0834 , H01L21/263 , H01L21/324 , H01L29/32 , H01L29/36 , H01L29/66333 , H01L29/7395 , H01L29/861
摘要： A method for producing a buried stop zone in a semiconductor body and a semiconductor component having a stop zone, has the method steps of: providing a semiconductor body having a first and a second side and a basic doping of a first conduction type, irradiating the semiconductor body via one of the sides with protons, as a result of which protons are introduced into a first region of the semiconductor body situated at a distance from the irradiation side, carrying out a thermal process in which the semiconductor body is heated to a predetermined temperature for a predetermined time duration, the temperature and the duration being chosen such that hydrogen-induced donors are generated both in the first region and in a second region adjacent to the first region in the direction of the irradiation side.
摘要翻译：一种用于在半导体本体中制造掩埋阻挡区域的方法和具有停止区域的半导体部件的方法，具有以下方法步骤：提供具有第一和第二侧的半导体本体和第一导电类型的基本掺杂，半导体本体通过一个侧面具有质子，其结果是将质子引入位于离辐射侧一定距离处的半导体主体的第一区域中，从而进行热处理，其中半导体主体被加热到预定的温度预定的持续时间，选择温度和持续时间，使得在照射侧的方向上在第一区域和邻近第一区域的第二区域中产生氢诱导的供体。

5. 发明申请

US20090140290A1 SEMICONDUCTOR COMPONENT INCLUDING A SHORT-CIRCUIT STRUCTURE 有权
标题翻译：包含短路结构的半导体元件
公开(公告)号：US20090140290A1
公开(公告)日：2009-06-04
申请号：US12324309
申请日：2008-11-26
申请人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
发明人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Uwe Kellner-Werdehausen , Reiner Barthelmess
IPC分类号： H01L29/74 , H01L21/332
CPC分类号： H01L27/0255 , H01L21/324 , H01L27/1027 , H01L29/0692 , H01L29/083 , H01L29/0834 , H01L29/0839 , H01L29/1012 , H01L29/1016 , H01L29/165 , H01L29/167 , H01L29/36 , H01L29/66136 , H01L29/66363 , H01L29/7395 , H01L29/7428 , H01L29/861 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor component including a short-circuit structure. One embodiment provides a semiconductor component having a semiconductor body composed of doped semiconductor material. The semiconductor body includes a first zone of a first conduction type and a second zone of a second conduction type, complementary to the first conduction type, the second zone adjoining the first zone. The first zone and the second zone are coupled to an electrically highly conductive layer. A connection zone of the second conduction type is arranged between the second zone and the electrically highly conductive layer.
摘要翻译：包括短路结构的半导体部件。一个实施例提供了具有由掺杂半导体材料构成的半导体本体的半导体部件。半导体本体包括与第一导电类型互补的第一导电类型的第一区和第二导电类型的第二区，与第一区相邻的第二区。第一区域和第二区域耦合到高度导电的层。第二导电类型的连接区域布置在第二区域和导电层之间。

6. 发明申请

US20080173968A1 DIODE 有权
标题翻译：二极管
公开(公告)号：US20080173968A1
公开(公告)日：2008-07-24
申请号：US11969017
申请日：2008-01-03
申请人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Reiner Barthelmess
发明人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Reiner Barthelmess
IPC分类号： H01L29/861 , H01L21/225
CPC分类号： H01L29/861 , H01L21/263 , H01L21/3242 , H01L29/0661 , H01L29/36
摘要： A diode is disclosed. One embodiment provides a semiconductor body having a front and a back, opposite the front in a vertical direction of the semiconductor body. The semiconductor body contains, successively in the vertical direction from the back to the front, a heavily n-doped zone, a weakly n-doped zone, a weakly p-doped zone and a heavily p-doped zone. In the vertical direction, the weakly p-doped zone has a thickness of at least 25% and at most 50% of the thickness of the semiconductor body.
摘要翻译：公开了二极管。一个实施例提供一种半导体本体，该半导体本体具有与半导体本体的垂直方向相反的前部和后部。半导体本体从背面到前面的垂直方向依次包含高n掺杂区，弱n掺杂区，弱p掺杂区和高p掺杂区。在垂直方向上，弱p掺杂区的厚度为半导体本体厚度的至少25％且至多50％。

7. 发明申请

US20060051923A1 Method for fabricating field rings 有权
标题翻译：制造现场环的方法
公开(公告)号：US20060051923A1
公开(公告)日：2006-03-09
申请号：US11207525
申请日：2005-08-19
申请人： Elmar Falck , Franz-Josef Niedernostheide , Hans-Joachim Schulze , Reiner Barthelmess
发明人： Elmar Falck , Franz-Josef Niedernostheide , Hans-Joachim Schulze , Reiner Barthelmess
IPC分类号： H01L21/336
CPC分类号： H01L29/74 , H01L29/0619 , H01L29/7395
摘要： A method for fabricating a semiconductor and at least one second semiconductor zone of a semiconductor component having a semiconductor body having a first semiconductor zone. At least one field zone arranged in an edge region of the semiconductor body is reduced in size by means of an etching method. In another embodiment, the semiconductor body is partially removed in a region outside the first semiconductor zone. At least one second semiconductor zone is then fabricated in the partially removed region.
摘要翻译：一种制造半导体的方法以及具有半导体本体的半导体元件的至少一个第二半导体区域，该半导体元件具有第一半导体区域。通过蚀刻方法将布置在半导体主体的边缘区域中的至少一个场区的尺寸减小。在另一个实施例中，半导体主体在第一半导体区外部的部分被部分去除。然后在部分去除的区域中制造至少一个第二半导体区。

8. 发明申请

US20050280076A1 Method for production of a buried stop zone in a semiconductor component and semiconductor component comprising a buried stop zone 有权
标题翻译：一种用于在半导体部件和半导体部件中制造掩埋停止区域的方法，所述半导体部件包括掩埋停止区域
公开(公告)号：US20050280076A1
公开(公告)日：2005-12-22
申请号：US11083914
申请日：2005-03-18
申请人： Reiner Barthelmess , Anton Mauder , Franz-Josef Niedernostheide , Hans-Joachim Schulze
发明人： Reiner Barthelmess , Anton Mauder , Franz-Josef Niedernostheide , Hans-Joachim Schulze
IPC分类号： H01L29/08 , H01L29/32 , H01L29/739 , H01L29/78 , H01L29/861 , H01L29/868 , H01L29/76 , H01L21/8238
CPC分类号： H01L29/7802 , H01L21/263 , H01L29/0878 , H01L29/167 , H01L29/32 , H01L29/36 , H01L29/66136 , H01L29/66333 , H01L29/66712 , H01L29/7395 , H01L29/861
摘要： A method for the production of a stop zone in a doped zone of a semiconductor body having a first side and a second side, comprises the following method steps: applying a mask having cutouts to one of the sides of the semiconductor body, irradiating the side having the mask with proton radiation, carrying out a heat treatment method in order to produce hydrogen-induced donors in the semiconductor body.
摘要翻译：一种用于在具有第一侧面和第二面的半导体本体的掺杂区域中制造阻挡区域的方法，包括以下方法步骤：将具有切口的掩模施加到半导体主体的一个侧面上，照射该侧面具有质子辐射的掩模，进行热处理方法以在半导体本体中产生氢诱导的供体。

9. 发明授权

US08034700B2 Method of fabricating a diode 有权
标题翻译：制造二极管的方法
公开(公告)号：US08034700B2
公开(公告)日：2011-10-11
申请号：US12648749
申请日：2009-12-29
申请人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Reiner Barthelmess
发明人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Reiner Barthelmess
IPC分类号： H01L21/22
CPC分类号： H01L29/861 , H01L21/263 , H01L21/3242 , H01L29/0661 , H01L29/36
摘要： A method of fabricating a diode is disclosed. One embodiment provides a semiconductor body having a front and a back, opposite the front in a vertical direction of the semiconductor body. The semiconductor body contains, successively in the vertical direction from the back to the front, a heavily n-doped zone, a weakly n-doped zone, a weakly p-doped zone and a heavily p-doped zone. In the vertical direction, the weakly p-doped zone has a thickness of at least 25% and at most 50% of the thickness of the semiconductor body.
摘要翻译：公开了制造二极管的方法。一个实施例提供一种半导体本体，该半导体本体具有与半导体本体的垂直方向相反的前部和后部。半导体本体从背面到前面的垂直方向依次包含高n掺杂区，弱n掺杂区，弱p掺杂区和高p掺杂区。在垂直方向上，弱p掺杂区的厚度为半导体本体厚度的至少25％且至多50％。

10. 发明授权

US07812368B2 High speed diode 有权
标题翻译：高速二极管
公开(公告)号：US07812368B2
公开(公告)日：2010-10-12
申请号：US11419919
申请日：2006-05-23
申请人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Reiner Barthelmess
发明人： Hans-Joachim Schulze , Franz-Josef Niedernostheide , Reiner Barthelmess
IPC分类号： H01L29/74
CPC分类号： H01L29/8611 , H01L29/0619 , H01L29/0692 , H01L29/32 , H01L29/66128
摘要： The invention relates to a high-speed diode comprising a semiconductor body (1), in which a heavily n-doped zone (8), a weakly n-doped zone (7) and a weakly p-doped zone (6) are arranged successively in a vertical direction (v), between which a pn load junction (4) is formed. A number of heavily p-doped islands (51-57) spaced apart from one another are arranged in the weakly p-doped zone (6). In this case, it is provided that the cross-sectional area density of the heavily p-doped islands (51-57) is smaller in a first area region (100) near to the edge than in a second area region (200) remote from the edge.
摘要翻译：本发明涉及一种包括半导体本体（1）的高速二极管，其中重度n掺杂区域（8），弱n掺杂区域（7）和弱p掺杂区域（6）被布置在垂直方向（v）上连续地形成pn负载接合部（4）。在弱p掺杂区域（6）中布置有彼此间隔开的多个重p掺杂岛（51-57）。在这种情况下，提供了在靠近边缘的第一区域区域（100）中，重p掺杂岛（51-57）的横截面积密度小于远离第二区域（200）的第二区域区域从边缘。

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