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31. 发明申请

US20070193513A1 Plasma generating method, plasma generating apparatus, and plasma processing apparatus 审中-公开
标题翻译：等离子体产生方法，等离子体产生装置和等离子体处理装置
公开(公告)号：US20070193513A1
公开(公告)日：2007-08-23
申请号：US11708058
申请日：2007-02-20
申请人： Hiroshige Deguchi , Hitoshi Yoneda , Kenji Kato , Akinori Ebe , Yuichi Setsuhara
发明人： Hiroshige Deguchi , Hitoshi Yoneda , Kenji Kato , Akinori Ebe , Yuichi Setsuhara
IPC分类号： C23C16/00
CPC分类号： C23C16/509 , H01J37/32192 , H01J37/3222
摘要： A plasma generating method and apparatus which use plural high-frequency antennas 2 to generate inductively coupled plasma, and a plasma processing apparatus using the apparatus. The antennas 2 are identical to one another. Application of a high-frequency electric power to the antennas 2 is performed from a high-frequency power source 4 which is disposed commonly to the antennas 2, through one matching circuit 5 and one busbar 3. The busbar 3 is partitioned into sections the number of which is equal to that of the antennas, while setting a portion which is connected to the matching circuit 5, as a reference. One-end portions of the antennas are connected to corresponding sections 31, 32, 33 through power supplying lines 311, 321, 331. The other end portions of the antennas are grounded. The impedances of the sections of the busbar, and those of the power supplying lines are adjusted so that same currents flow through the antennas, and a same voltage is applied to the antennas. Therefore, the inductively coupled plasma is generated while uniformalizing high-frequency electric powers supplied to the antennas 2.
摘要翻译：使用多个高频天线2生成电感耦合等离子体的等离子体产生方法和装置以及使用该装置的等离子体处理装置。天线2彼此相同。通过一个匹配电路5和一个母线3，从天线2共同配置的高频电源4向天线2施加高频电力。母线3被划分为多个在设置连接到匹配电路5的部分作为参考时，其等于天线的天线。天线的一端部分通过供电线311,321,331连接到对应部分31,32,33。天线的另一端接地。调节母线段和供电线的部分的阻抗，使得相同的电流流过天线，并且向天线施加相同的电压。因此，在对提供给天线2的高频电力进行均匀化的同时产生电感耦合等离子体。

32. 发明申请

US20070095287A1 Plasma producing method and apparatus as well as plasma processing apparatus 有权
标题翻译：等离子体制造方法和装置以及等离子体处理装置
公开(公告)号：US20070095287A1
公开(公告)日：2007-05-03
申请号：US11586583
申请日：2006-10-26
申请人： Kenji Kato , Hiroshige Deguchi , Hitoshi Yoneda , Kiyoshi Kubota , Akinori Ebe , Yuichi Setsuhara
发明人： Kenji Kato , Hiroshige Deguchi , Hitoshi Yoneda , Kiyoshi Kubota , Akinori Ebe , Yuichi Setsuhara
IPC分类号： C23C16/00
CPC分类号： H01J37/32954 , H01J37/321 , H01J37/32174
摘要： Plasma producing method and apparatus wherein a plurality of high-frequency antennas are arranged in a plasma producing chamber, and a high-frequency power supplied from a high-frequency power supply device (including a power source, a phase controller and the like) is applied to a gas in the chamber from the antennas to produce inductively coupled plasma. At least some of the plurality of high-frequency antennas are arranged in a fashion of such parallel arrangement that the antennas successively neighbor to each other and each of the antennas is opposed to the neighboring antenna. The high-frequency power supply device controls a phase of a high-frequency voltage applied to each antenna, and thereby controls an electron temperature of the inductively coupled plasma.
摘要翻译：等离子体制造方法和装置，其中多个高频天线布置在等离子体产生室中，并且从高频电源装置（包括电源，相位控制器等）提供的高频电力是从天线施加到腔室中的气体以产生电感耦合等离子体。多个高频天线中的至少一些以这样的并行布置的方式布置，使得天线彼此相邻并且每个天线与相邻天线相对。高频电源装置控制施加到每个天线的高频电压的相位，从而控制感应耦合等离子体的电子温度。

33. 发明授权

US6103321A Method of manufacturing an ultraviolet resistant object 失效
标题翻译：制造抗紫外线物体的方法
公开(公告)号：US6103321A
公开(公告)日：2000-08-15
申请号：US212381
申请日：1998-12-16
申请人： Yasushi Fujinami , Akinori Ebe , Osamu Imai , Kiyoshi Ogata
发明人： Yasushi Fujinami , Akinori Ebe , Osamu Imai , Kiyoshi Ogata
IPC分类号： C08J7/00 , B29C35/08 , B29C59/16 , B32B7/02 , C08J7/06 , C23C14/02 , C23C14/08 , C23C16/02 , B05D3/00
CPC分类号： B29C59/16 , C23C14/027 , C23C14/083 , B29C2035/0872
摘要： A method of manufacturing an ultraviolet resistant object, wherein the object has at least a portion made of a polymer material, and is provided with an ultraviolet shielding film covering at least a portion of a surface of the portion made of the polymer material, including the steps of forming the ultraviolet shielding film by vapor deposition over the surface of the portion to be covered with the film; and irradiating, prior to the formation of the ultraviolet shielding film or in an initial stage of the film forming step, the film formation surface with ions with an energy in a range from 0.05 keV to 2 keV to attain the total irradiation rate in a range from 1.times.10.sup.13 ions/cm.sup.2 to 5.times.10.sup.17 ions/cm.sup.2.
摘要翻译：一种制造防紫外线物体的方法，其中所述物体至少具有由聚合物材料制成的部分，并且设置有覆盖由所述聚合物材料制成的部分的表面的至少一部分的紫外线屏蔽膜，所述紫外线屏蔽膜包括通过气相沉积在待覆盖的部分的表面上形成紫外线屏蔽膜的步骤; 并且在形成紫外线屏蔽膜之前或在成膜步骤的初始阶段，在成膜表面上照射能量在0.05keV至2keV的能量的离子，以使总辐照率达到一定范围从1×10 13离子/ cm 2到5×10 17个离子/ cm 2。

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