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21. 发明申请

US20050194475A1 Inductively coupled plasma chemical vapor deposition apparatus 审中-公开
标题翻译：电感耦合等离子体化学气相沉积装置
公开(公告)号：US20050194475A1
公开(公告)日：2005-09-08
申请号：US11070232
申请日：2005-03-03
申请人： Han-Ki Kim , Myung-Soo Huh , Myoung-Soo Kim , Kyu-Sung Lee , Seok-Heon Jeong
发明人： Han-Ki Kim , Myung-Soo Huh , Myoung-Soo Kim , Kyu-Sung Lee , Seok-Heon Jeong
IPC分类号： C23C16/507 , B05B5/025 , C23C16/455 , H01L21/285 , H01L21/31
CPC分类号： H01J37/3244 , C23C16/042 , C23C16/45563 , C23C16/507 , H01J37/321 , H01J37/3211
摘要： An inductively coupled plasma chemical vapor deposition apparatus comprises a reaction gas spray nozzle capable of evenly spraying reaction gas onto a rectangular substrate, a radio frequency (RF) antenna capable of uniformly forming a plasma source in a rectangular shape, and a rectangular mask maintained at a low temperature so as to uniformly form a thin film on the rectangular substrate used for a flat panel display device.
摘要翻译：电感耦合等离子体化学气相沉积装置包括能够将反应气体均匀地喷射到矩形基板上的反应气体喷嘴，能够均匀地形成矩形形状的等离子体源的射频（RF）天线和维持在低温，以便在用于平板显示装置的矩形基板上均匀地形成薄膜。

22. 发明申请

US20050139317A1 Shielding plate in plasma for uniformity improvement 审中-公开
标题翻译：等离子体屏蔽板均匀性提高
公开(公告)号：US20050139317A1
公开(公告)日：2005-06-30
申请号：US10980909
申请日：2004-11-03
申请人： Han-Ming Wu , He Long
发明人： Han-Ming Wu , He Long
IPC分类号： C23C16/44 , C23C16/455 , C23C16/507 , H01J37/32 , C23F1/00
CPC分类号： H01J37/32623 , C23C16/45591 , C23C16/507
摘要： An apparatus comprising a plasma chamber containing a plasma for a plasma-assisted material process upon a substrate; a shielding plate within the plasma chamber to actively direct ion flux to desired areas of the substrate; and a supporting structure to support the shielding plate within the chamber is disclosed.
摘要翻译：一种包括等离子体室的装置，其包含用于在衬底上等离子体辅助材料工艺的等离子体; 等离子体室内的屏蔽板，以将离子通量主动地引导到衬底的所需区域; 并且公开了用于支撑室内的屏蔽板的支撑结构。

23. 发明申请

US20050056369A1 Plasma apparatus and method capable of adaptive impedance matching 有权
标题翻译：能够进行自适应阻抗匹配的等离子体装置和方法
公开(公告)号：US20050056369A1
公开(公告)日：2005-03-17
申请号：US10659258
申请日：2003-09-11
申请人： Chien-Hsin Lai , San-An Lin , Kuo-En Yen , Kuo-Uei Huang
发明人： Chien-Hsin Lai , San-An Lin , Kuo-En Yen , Kuo-Uei Huang
IPC分类号： C23C16/458 , C23C16/507 , H01J37/32 , C23F1/00
CPC分类号： H01J37/32183 , C23C16/4586 , C23C16/507 , H01J37/32082 , Y10T279/23
摘要： A plasma apparatus capable of adaptive impedance matching comprises a plasma reactor which can produce plasma to proceed with CVD (chemical vapor deposition) process, a bi-polar electrostatic chuck which locates inside the plasma reactor and is used to support and secure a wafer, an alternating current bias power supply which connects to the bi-polar electrostatic chuck supplies the voltage potential bias for ion-bombardment from plasma, and an impedance-matching circuit which connects the alternating current bias power supply to the bi-polar electrostatic chuck is used to balance the inner electrode power output and the outer electrode power output of the bi-polar electrostatic chuck.
摘要翻译：能够进行自适应阻抗匹配的等离子体装置包括可产生等离子体以进行CVD（化学气相沉积）工艺的等离子体反应器，位于等离子体反应器内部并用于支撑和固定晶片的双极性静电卡盘，连接到双极静电卡盘的交流偏压电源提供用于等离子体离子轰击的电压电位偏置，并且将用于将交流偏置电源连接到双极静电卡盘的阻抗匹配电路用于平衡双极静电卡盘的内部电极功率输出和外部电极功率输出。

24. 发明授权

US06858446B2 Plasma monitoring method and semiconductor production apparatus 失效
标题翻译：等离子体监测方法和半导体生产设备
公开(公告)号：US06858446B2
公开(公告)日：2005-02-22
申请号：US10139536
申请日：2002-05-06
申请人： Atsushi Denda , Yoshinao Ito
发明人： Atsushi Denda , Yoshinao Ito
IPC分类号： H05H1/46 , C23C14/54 , C23C16/50 , C23C16/507 , C23C16/511 , H01J37/32 , H01L21/203 , H01L21/205 , H01L21/00 , H05H1/00
CPC分类号： H01J37/32082 , C23C16/507 , H01J37/32935
摘要： In certain embodiments a plasma is supplied from a plasma chamber 10 into a reaction chamber 18 of a plasma CVD apparatus. An electrode 22 is disposed in the reaction chamber 18. A semiconductor wafer on which a thin film is to be formed is placed on the electrode 22. A radio-frequency wave is generated by a radio-frequency wave generator 28 and supplied to the electrode 22 via a radio-frequency matching network 30, a blocking capacitor 32, and an RF probe 34 so as to control the plasma in the plasma chamber 10. A judgment device 38 is electrically connected to the RF probe 34. The voltage and current are be measured by the RF probe and the judgment device 38 is used to judge the state of the plasma in the plasma chamber 10.
摘要翻译：在某些实施例中，将等离子体从等离子体室10供应到等离子体CVD装置的反应室18中。电极22设置在反应室18中。要在其上形成薄膜的半导体晶片放置在电极22上。由射频波发生器28产生射频波并提供给电极 22，通过射频匹配网络30，隔离电容器32和RF探针34，以便控制等离子体室10中的等离子体。判断装置38电连接到RF探针34。电压和电流为通过RF探头测量，并且使用判断装置38来判断等离子体室10中的等离子体的状态。

25. 发明申请

US20050019494A1 Sequential gas flow oxide deposition technique 失效
标题翻译：顺序气流氧化沉积技术
公开(公告)号：US20050019494A1
公开(公告)日：2005-01-27
申请号：US10627228
申请日：2003-07-25
申请人： Farhad Moghadam , Michael Cox , Padmanabhan Krishnaraj , Thanh Pham
发明人： Farhad Moghadam , Michael Cox , Padmanabhan Krishnaraj , Thanh Pham
IPC分类号： C23C16/40 , C23C16/44 , C23C16/455 , C23C16/507
CPC分类号： C23C16/45542 , C23C16/402 , C23C16/507
摘要： A method of depositing a silica glass insulating film over a substrate. In one embodiment the method comprises exposing the substrate to a silicon-containing reactant introduced into a chamber in which the substrate is disposed such that one or more layers of the silicon-containing reactant are adsorbed onto the substrate; purging or evacuating the chamber of the silicon-containing reactant; converting the silicon-containing reactant into a silica glass insulating compound by exposing the substrate to oxygen radicals formed from a second reactant while biasing the substrate to promote a sputtering effect, wherein an average atomic mass of all atomic constituents in the second reactant is less than or equal to an average atomic mass of oxygen; and repeating the exposing, purging/evacuating and exposing sequence a plurality of times until a desired film thickness is reached.
摘要翻译：一种在基板上沉积石英玻璃绝缘膜的方法。在一个实施方案中，该方法包括将基底暴露于引入到其中设置基底的室中的含硅反应物，使得一层或多层含硅反应物被吸附到基底上; 吹扫或抽空含硅反应物的室; 通过将衬底暴露于由第二反应物形成的氧自由基，同时偏置衬底以促进溅射效应，将含硅反应物转化为石英玻璃绝缘化合物，其中第二反应物中所有原子组分的平均原子质量小于或等于氧的平均原子质量; 并重复曝光，吹扫/排空和曝光序列多次，直至达到所需的膜厚度。

26. 发明授权

US6149730A Apparatus for forming films of a semiconductor device, a method of manufacturing a semiconductor device, and a method of forming thin films of a semiconductor 有权
标题翻译：用于形成半导体器件的膜的设备，半导体器件的制造方法以及形成半导体的薄膜的方法
公开(公告)号：US6149730A
公开(公告)日：2000-11-21
申请号：US168080
申请日：1998-10-08
申请人： Yoshihisa Matsubara , Manabu Iguchi , Kazuhiko Endo
发明人： Yoshihisa Matsubara , Manabu Iguchi , Kazuhiko Endo
IPC分类号： C23C16/44 , C23C16/458 , C23C16/507 , C23C16/54 , H01J37/32 , H01L21/314 , H01L21/316 , H01L21/318 , H01L21/683 , C23C16/00 , H05H1/00
CPC分类号： H01J37/32706 , C23C16/4405 , C23C16/4585 , C23C16/507 , C23C16/54 , H01L21/6831 , H01L21/3146 , H01L21/31612 , H01L21/3185
摘要： In an apparatus for forming a film of a semiconductor device in which chemical vapor deposition is used to accumulate insulation films such as a carbon-compound film and a silicon-oxide or silicon-nitride film on a silicon substrate, it is possible to prevent the peel-off of the silicon-oxide film in the circumferential area of the silicon substrate.The apparatus includes a chamber including a holder to hold the substrate, a ring-shaped member to grasp the substrate in cooperation with the holder, and a reactive gas supplier to supply a predetermined type of reactive gas to the chamber. The member dimensionally has an inside diameter smaller than an outside diameter of the holder and an outside diameter larger than that of the holder. During the film forming process with the reactive gas, the member concentrically covers a circumferential region of a surface of the substrate.
摘要翻译：在用于形成半导体器件的薄膜的装置中，其中化学气相沉积用于在硅衬底上积聚诸如碳化合物膜和氧化硅或氮化硅膜的绝缘膜，可以防止在硅衬底的圆周区域中剥离氧化硅膜。该装置包括一个室，该室包括用于保持基板的保持器，与保持器协作地抓住基板的环形构件以及向腔室供应预定类型的反应气体的反应气体供应器。该构件的尺寸尺寸小于保持器的外径，外径大于保持器的外径。在与反应性气体成膜的过程中，该构件同心地覆盖衬底的表面的周向区域。

27. 发明授权

US6145469A Plasma processing apparatus and processing method 失效
标题翻译：等离子体处理装置及处理方法
公开(公告)号：US6145469A
公开(公告)日：2000-11-14
申请号：US853449
申请日：1997-05-09
申请人： Koji Teranishi , Atsushi Yamagami , Satoshi Takaki
发明人： Koji Teranishi , Atsushi Yamagami , Satoshi Takaki
IPC分类号： H05H1/46 , C23C14/34 , C23C16/50 , C23C16/505 , C23C16/507 , C23F4/00 , H01J37/32 , H01L21/203 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L31/20 , C23C16/00
CPC分类号： H01J37/32091 , C23C14/34 , C23C16/507 , H01J37/32532 , H01L31/202 , Y02E10/50 , Y02P70/521
摘要： A plasma processing apparatus has a substrate holder, arranged in a reaction vessel which can be reduced in pressure, for placing a substrate to be processed thereon, means for feeding a process gas into the reaction vessel, and a cathode electrode for supplying a high-frequency wave power from a high-frequency wave power source to an interior of the reaction vessel through a matching circuit, and is characterized in that at least a part of the reaction vessel is constituted by a dielectric member, and the cathode electrode is arranged outside the reaction vessel, so that a plasma distribution in the reaction vessel is made uniform, and a uniform plasma process for a substrate to be processed is made possible. The plasma process includes CVD, sputtering, etching or ashing.
摘要翻译：等离子体处理装置具有设置在能够降低压力的反应容器中的基板保持件，用于放置待处理的基板，用于将工艺气体供给到反应容器中的装置，通过匹配电路从高频波电源到反应容器内部的频率波功率，其特征在于反应容器的至少一部分由电介质构成，阴极电极布置在外部使得反应容器中的等离子体分布均匀，并且可以对待处理的基板进行均匀的等离子体处理。等离子体工艺包括CVD，溅射，蚀刻或灰化。

28. 依法登记的发明

USH1868H Method of and apparatus for controlling plasma potential and eliminating unipolar arcs in plasma chambers 失效
标题翻译：用于控制等离子体电位和消除等离子体室中的单极电弧的方法和装置
公开(公告)号：USH1868H
公开(公告)日：2000-10-03
申请号：US60056
申请日：1998-04-15
申请人： Anthony E. Robson
发明人： Anthony E. Robson
IPC分类号： C23C16/507 , H01J37/32 , C23C16/00
CPC分类号： H01J37/321 , C23C16/507 , H01J37/3233 , H01J2237/0206
摘要： A method of and apparatus for controlling the potential of a plasma including a metal-walled chamber and a conductive coil which carries a radio-frequency current and is wrapped around the metal-walled chamber to produce a plasma within the chamber. A filament made of refractory metal has two ends, and a central portion formed in the shape of a probe. The central portion of the filament extends into the interior of the chamber and the two ends of the filament pass through a wall of the chamber to the exterior of the chamber. A heating power supply is connected to the two ends to the filament and to the chamber wall for heating the filament to a predetermined temperature above that of the plasma. The heated filament produces thermionic emissions from the filament to the plasma in order to control the plasma potential and eliminate unipolar arcing at the chamber wall.
摘要翻译：一种用于控制包括金属壁室和导电线圈的等离子体的电位的方法和装置，其传送射频电流并缠绕在金属壁室周围以在室内产生等离子体。由难熔金属制成的灯丝具有两端，形成为探针形状的中央部。细丝的中心部分延伸到室的内部，并且细丝的两端通过腔室的壁到达室的外部。加热电源的两端连接到灯丝和室壁，用于将灯丝加热到高于等离子体的预定温度。加热的灯丝产生从灯丝到等离子体的热离子发射，以便控制等离子体电位并消除室壁处的单极电弧。

29. 发明授权

US6105518A Durable plasma treatment apparatus and method 失效
标题翻译：耐久等离子体处理装置及方法
公开(公告)号：US6105518A
公开(公告)日：2000-08-22
申请号：US885720
申请日：1997-06-30
申请人： Anthony E. Robson , Ronald A. Rudder , Robert C. Hendry , Moses M. David , James V. Burt
发明人： Anthony E. Robson , Ronald A. Rudder , Robert C. Hendry , Moses M. David , James V. Burt
IPC分类号： H05H1/46 , C23C8/36 , C23C16/27 , C23C16/50 , C23C16/507 , C30B29/04 , H01J37/32 , H01L21/31 , H05H1/00
CPC分类号： C23C16/272 , C23C16/277 , C23C16/507 , C23C8/36 , H01J37/321 , H01J37/32458 , H01J37/32522
摘要： A method and apparatus for treating a work surface, wherein there is provided a chamber having a longitudinal axis and longitudinally extending electrically conductive sidewalls, at least one sidewall having at least one longitudinally extending gap that interrupts a current path through the sidewalls transverse to the longitudinal axis, and wherein the chamber is sealed to allow pressure inside the chamber to be controlled. Also provided is an axially-extending array of current-carrying conductors which at least partially encircle the chamber, are transverse to the longitudinal axis, and establish a magnetic field parallel to the longitudinal axis of the chamber, and a power supply connected to the conductor array and adapted to provide high-frequency current in the conductors to magnetically induce ionization of the gaseous material in the chamber and form a plasma sheath that surrounds and extends along the longitudinal axis and conforms to the sidewalls of the chamber, and wherein the work surface is exposed to the plasma sheath and extends in the direction of the longitudinal axis.
摘要翻译：一种用于处理工作表面的方法和设备，其中设置有具有纵向轴线和纵向延伸的导电侧壁的室，至少一个侧壁具有至少一个纵向延伸的间隙，其中断通过横向于纵向的侧壁的电流路径轴，并且其中所述室被密封以允许控制所述室内的压力。还提供了轴向延伸的载流导体阵列，其至少部分地环绕腔室，横向于纵向轴线，并且建立平行于腔室的纵向轴线的磁场，以及连接到导体的电源阵列并且适于在导体中提供高频电流以磁性地诱导腔室中的气态材料的电离，并形成等离子体护套，其围绕并沿着纵向轴线延伸并且与腔的侧壁一致并且其中工作表面暴露于等离子体护套并沿着纵向轴线的方向延伸。

30. 发明授权

US06062163A Plasma initiating assembly 失效
标题翻译：等离子体起始组装
公开(公告)号：US06062163A
公开(公告)日：2000-05-16
申请号：US876082
申请日：1997-06-13
申请人： Roger Patrick , Philippe Schoenborn , Mark Franklin , Frank Bose
发明人： Roger Patrick , Philippe Schoenborn , Mark Franklin , Frank Bose
IPC分类号： H05H1/46 , C23C16/50 , C23C16/507 , H01J37/32 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , C23C16/00 , C23F1/02
CPC分类号： H01J37/321 , C23C16/507 , H01J37/32009 , H01J37/32082
摘要： An apparatus for producing a plasma suitable for semiconductor processing at pressures in the low millitorr range. The apparatus includes a vacuum chamber with a dielectric window, a generally planar coil disposed adjacent the window outside the chamber and coupled to an appropriate power source, and a plasma initiator disposed within the chamber. Once the plasma is initiated, the planar coil sustains the plasma by inductive power coupling. In one embodiment the plasma initiator is a secondary electrode disposed within the chamber and coupled to a second RF power source. In an alternative embodiment both the secondary electrode and a target pedestal are coupled to the secondary RF power source through a power splitter. In an alternative embodiment, the plasma initiator is used to ionize a portion of the process gas and provide a plasma that may then inductively couple with the planar coil. Initial ionization of the process gas may be achieved by use of an ultraviolet light source, an ultraviolet laser, a high voltage power source such as a tesla coil, or an electrical arc forming device such as a spark plug.
摘要翻译：一种用于生产适用于低压力范围内的半导体加工的等离子体的装置。该设备包括具有电介质窗口的真空室，与室外的窗口相邻设置并且耦合到适当的电源的大致平面的线圈以及设置在室内的等离子体启动器。一旦等离子体启动，平面线圈通过感应功率耦合来维持等离子体。在一个实施例中，等离子体引发器是设置在室内并且耦合到第二RF电源的次级电极。在替代实施例中，辅助电极和目标基座都通过功率分配器耦合到次级RF电源。在替代实施例中，等离子体引发器用于电离一部分工艺气体并提供等离子体，其然后可以与平面线圈感应耦合。处理气体的初始电离可以通过使用紫外光源，紫外激光器，诸如特斯拉线圈的高压电源或诸如火花塞的电弧形成装置来实现。

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