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1. 发明授权

US09340118B2 Charging control apparatus for an electricity storage apparatus in a vehicle 有权
标题翻译：车辆用蓄电装置用充电控制装置
公开(公告)号：US09340118B2
公开(公告)日：2016-05-17
申请号：US13455407
申请日：2012-04-25
申请人： Kazuhiko Endo
发明人： Kazuhiko Endo
IPC分类号： B60L11/18 , B60R25/20
CPC分类号： B60L11/1846 , B60L11/1816 , B60L2250/10 , B60L2270/36 , B60R25/2018 , Y02T10/7005 , Y02T10/7072 , Y02T90/121 , Y02T90/128 , Y02T90/14 , Y02T90/163 , Y02T90/169 , Y04S30/14
摘要： When detecting an abnormality, an in-vehicle wireless instrument in a plug-in vehicle sends an abnormality occurrence notification to a mobile terminal via an information center. The mobile terminal performs a notification to notify a user of the abnormality having occurred in the plug-in vehicle. When the user performs a charging forbiddance manipulation based on the notification, the mobile terminal sends a charging forbidding command to a power management ECU in the vehicle via the information center and the in-vehicle wireless instrument. When receiving the charging forbidding command, the power management ECU stops charging a battery using an external power source, and sends a setting completion notification to the mobile terminal via the in-vehicle wireless instrument and the information center. When receiving the setting completion notification, the mobile terminal notifies the user that the charging is stopped.
摘要翻译：当检测到异常时，插入式车辆中的车载无线装置经由信息中心向移动终端发送异常发生通知。移动终端执行通知，向通知用户发生在插入式车辆中发生的异常。当用户基于该通知进行充电禁止操作时，移动终端经由信息中心和车载无线仪器向车辆中的电源管理ECU发送充电禁止命令。当接收到禁止充电命令时，电源管理ECU使用外部电源对电池进行停止充电，并经由车载无线装置和信息中心向移动终端发送设定完成通知。当接收到设置完成通知时，移动终端通知用户充电停止。

2. 发明授权

US08597732B2 Thin film depositing method 有权
标题翻译：薄膜沉积法
公开(公告)号：US08597732B2
公开(公告)日：2013-12-03
申请号：US12531260
申请日：2008-03-14
申请人： Naoki Shirakawa , Yoshiyuki Yoshida , Kazuhiko Endo , Tetsuya Mino
发明人： Naoki Shirakawa , Yoshiyuki Yoshida , Kazuhiko Endo , Tetsuya Mino
IPC分类号： C23C16/06
CPC分类号： C01B23/0036 , B01D53/32 , B01D2257/104 , C01B21/0433 , C01B2210/0031 , C01B2210/0034 , C01B2210/0045 , C01B2210/0062 , C23C14/165 , C23C14/564 , C23C14/5853 , C23C16/18 , C23C16/4402 , C23C16/56
摘要： A method comprising: supplying a gas whose water concentration has been controlled to become smaller than 1 PPB, whose oxygen partial pressure has been controlled to become lower than 10−21 atm by a water/oxygen molecule discharging apparatus into the interior of a reaction chamber and carrying out a dehydration/deoxidation process in the interior of said reaction chamber so as to control water vapor partial pressure to become lower than 10−10 atm; depositing a metal film on a substrate by supplying a carrier gas or a plasma excitation gas whose water concentration has been controlled to become smaller than 1 PPB, whose oxygen partial pressure has been controlled to become lower than 10−21 atm into the interior of said reaction chamber; forming an insulating film on the wafer by oxidizing the metal film in a low-oxygen atmosphere whose oxygen partial pressure has been controlled to become lower than 10−20 atm.
摘要翻译：一种方法，包括：通过水/氧分子排放装置将其浓度被控制成小于1PPB的气体，其氧分压被控制为低于10-21atm，进入反应室内并在所述反应室的内部进行脱水/脱氧处理，以控制水蒸气分压变得低于10-10atm; 通过将其水浓度被控制为小于1PPB的载气或等离子体激发气体，将其氧分压降低到10-21atm以下，将氧化金属膜沉积在基板上，进入所述反应室; 在氧分压低于10-20atm的低氧气氛中氧化金属膜，在晶片上形成绝缘膜。

3. 发明授权

US08575677B2 Semiconductor device and its manufacturing method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US08575677B2
公开(公告)日：2013-11-05
申请号：US13353089
申请日：2012-01-18
申请人： Heiji Watanabe , Kazuhiko Endo , Kenzo Manabe
发明人： Heiji Watanabe , Kazuhiko Endo , Kenzo Manabe
IPC分类号： H01L27/115 , H01L21/84
CPC分类号： H01L21/28202 , H01L21/28167 , H01L29/513 , H01L29/517 , H01L29/518
摘要： A semiconductor device having, on a silicon substrate, a gate insulating film and a gate electrode in this order; wherein the gate insulating film comprises a nitrogen containing high-dielectric-constant insulating film which has a structure in which nitrogen is introduced into metal oxide or metal silicate; and the nitrogen concentration in the nitrogen containing high-dielectric-constant insulating film has a distribution in the direction of the film thickness; and a position at which the nitrogen concentration in the nitrogen containing high-dielectric-constant insulating film reaches the maximum in the direction of the film thickness is present in a region at a distance from the silicon substrate. A method of manufacturing a semiconductor device including introducing nitrogen by irradiating the high-dielectric-constant insulating film which is made of metal oxide or metal silicate, with a nitrogen containing plasma, is also provided.
摘要翻译：一种在硅衬底上依次具有栅极绝缘膜和栅电极的半导体器件; 其中所述栅极绝缘膜包括含氮的高介电常数绝缘膜，其具有将氮引入金属氧化物或金属硅酸盐中的结构; 含氮高介电常数绝缘膜中的氮浓度在膜厚方向上具有分布; 在与硅衬底相距一定距离的区域存在氮含量高介电常数绝缘膜中的氮浓度在膜厚方向上达到最大的位置。还提供一种制造半导体器件的方法，该半导体器件包括通过用含氮等离子体照射由金属氧化物或金属硅酸盐制成的高介电常数绝缘膜来引入氮。

4. 发明授权

US08125016B2 Semiconductor device and its manufacturing method 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US08125016B2
公开(公告)日：2012-02-28
申请号：US10519084
申请日：2003-06-19
申请人： Heiji Watanabe , Kazuhiko Endo , Kenzo Manabe
发明人： Heiji Watanabe , Kazuhiko Endo , Kenzo Manabe
IPC分类号： H01L27/115 , H01L21/84
CPC分类号： H01L21/28202 , H01L21/28167 , H01L29/513 , H01L29/517 , H01L29/518
摘要： There is provided a semiconductor device having, on a silicon substrate, a gate insulating film and a gate electrode in this order; wherein the gate insulating film comprises a nitrogen containing high-dielectric-constant insulating film which has a structure in which nitrogen is introduced into metal oxide or metal silicate; and the nitrogen concentration in the nitrogen containing high-dielectric-constant insulating film has a distribution in the direction of the film thickness; and a position at which the nitrogen concentration in the nitrogen containing high-dielectric-constant insulating film reaches the maximum in the direction of the film thickness is present in a region at a distance from the silicon substrate. A manufacturing method of a semiconductor device comprising the step of making the introduction of nitrogen by irradiating the high-dielectric-constant insulating film which is made of metal oxide or metal silicate, with a nitrogen containing plasma, is also provided. This improves the thermal stability of the high-dielectric-constant insulating film, suppresses the dopant penetration and, in addition, prevents electric characteristics of the interface with the silicon substrate from deteriorating.
摘要翻译：提供一种在硅衬底上依次具有栅极绝缘膜和栅电极的半导体器件; 其中所述栅极绝缘膜包括含氮的高介电常数绝缘膜，其具有将氮引入金属氧化物或金属硅酸盐中的结构; 含氮高介电常数绝缘膜中的氮浓度在膜厚方向上具有分布; 在与硅衬底相距一定距离的区域存在氮含量高介电常数绝缘膜中的氮浓度在膜厚方向上达到最大的位置。还提供了一种半导体器件的制造方法，其包括通过用含氮等离子体照射由金属氧化物或金属硅酸盐制成的高介电常数绝缘膜来引入氮的步骤。这提高了高介电常数绝缘膜的热稳定性，抑制了掺杂剂的渗透，另外防止与硅衬底的界面的电特性劣化。

5. 发明授权

US06624368B2 Switch device 有权
公开(公告)号：US06624368B2
公开(公告)日：2003-09-23
申请号：US10205653
申请日：2002-07-24
申请人： Dai Sato , Toshikatsu Nishi , Kazuhiko Endo , Mikio Nakayama , Takuo Watanabe
发明人： Dai Sato , Toshikatsu Nishi , Kazuhiko Endo , Mikio Nakayama , Takuo Watanabe
IPC分类号： H01K910
CPC分类号： H01H9/181 , H01H19/025
摘要： A switch device is provided which allows easy recognition of the operation amount of the switch device with an inexpensive structure and without the need for an operator to change the posture or the like, even when a blind spot region is generated in an indicator as a special indication region at the time of indicating the operation amount of the switch. When the special indication region on the indicator cannot be seen directly because it is blocked by a knob, the state of the indicator in the special indication region is expressed using a visible region on the indicator which is always visible. Thus, the operator can recognize the operation amount of the switch device in the blind spot region without changing the posture or the like and using a simple structure of the switch device.

6. 发明授权

US06197704B1 Method of fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US06197704B1
公开(公告)日：2001-03-06
申请号：US09286986
申请日：1999-04-07
申请人： Kazuhiko Endo , Keisuke Shinoda
发明人： Kazuhiko Endo , Keisuke Shinoda
IPC分类号： H01L2131
CPC分类号： H01L21/02115 , H01L21/02118 , H01L21/0212 , H01L21/02164 , H01L21/022 , H01L21/02274 , H01L21/02337 , H01L21/3105 , H01L21/31058 , H01L21/312 , H01L21/3146 , H01L21/31612
摘要： There is provided a method of fabricating a semiconductor device having a multi-layered structure and including an interlayer insulating film composed of carbon family material, the method including the steps of (a) depositing an insulating film on a lower wiring layer, the insulating film being composed of carbon family material, (b) annealing the insulating film in hydrogen atmosphere at a first temperature equal to or greater than a temperature at which the insulating film has been deposited, and (c) forming an upper wiring layer on the insulating film. The method suppresses gas from being discharged out of an insulating film without an increase in dielectric constant, and prevents deposited films on the insulating film from being peeled off.
摘要翻译：提供一种制造具有多层结构并包括由碳族材料构成的层间绝缘膜的半导体器件的方法，所述方法包括以下步骤：（a）在下布线层上沉积绝缘膜，所述绝缘膜由碳族材料构成，（b）在等于或大于绝缘膜沉积温度的第一温度的氢气氛中对绝缘膜进行退火，以及（c）在绝缘膜上形成上部布线层。该方法抑制气体从介电常数的增加而被排出绝缘膜，并且防止绝缘膜上的沉积膜被剥离。

7. 发明授权

US06180531B2 Semiconductor manufacturing method 有权
标题翻译：半导体制造方法
公开(公告)号：US06180531B2
公开(公告)日：2001-01-30
申请号：US09231493
申请日：1999-01-14
申请人： Yoshishige Matsumoto , Yoshitake Ohnishi , Kazuhiko Endo , Toru Tatsumi
发明人： Yoshishige Matsumoto , Yoshitake Ohnishi , Kazuhiko Endo , Toru Tatsumi
IPC分类号： H01L21302
CPC分类号： H01L21/76831 , H01L21/0212 , H01L21/0214 , H01L21/02164 , H01L21/0217 , H01L21/022 , H01L21/31144 , H01L21/3127 , H01L21/76801 , H01L21/76802
摘要： A semiconductor device, in which wiring layers are electrically isolated from each other by an insulating film which includes an amorphous carbon fluoride film insulating film containing carbon and fluorine as main components and the wiring layers are electrically connected to each other by a conductive material buried in a hole penetrating through the insulating film, is manufactured by selectively etching the amorphous carbon fluoride film. Moreover, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is formed on both of the amorphous carbon fluoride film and a side surface of said hole, or one of the amorphous carbon fluoride film and the side surface thereof.
摘要翻译：一种半导体器件，其中布线层通过绝缘膜彼此电绝缘，所述绝缘膜包括以碳和氟为主要成分的无定形氟化碳膜绝缘膜，并且所述布线层通过埋入的导电材料彼此电连接通过选择性地蚀刻无定形氟化碳膜来制造穿透绝缘膜的孔。此外，在无定形氟化碳膜和所述孔的侧表面或无定形氟化碳膜及其侧表面之一上形成氧化硅膜，氮化硅膜或氮氧化硅膜。

8. 发明授权

US4939732A Method and system for checking errors of signal being transferred through transmission line 失效
标题翻译：检查通过传输线传输的信号错误的方法和系统
公开(公告)号：US4939732A
公开(公告)日：1990-07-03
申请号：US251212
申请日：1988-07-14
申请人： Koichi Okamoto , Kousuke Nishimura , Kazuyoshi Miyazawa , Kazuhiko Endo , Tamotsu Mikuni
发明人： Koichi Okamoto , Kousuke Nishimura , Kazuyoshi Miyazawa , Kazuhiko Endo , Tamotsu Mikuni
IPC分类号： B31B1/64 , B31B27/00 , H03M13/00 , H04L1/00
CPC分类号： H04L1/0083 , H04L1/0061 , H04L1/0072
摘要： Errors occurring in information signals (each including control signals), dummy codes and attribute flags for the information signals and the dummy codes, transferred from a transmitting circuit to a receiving circuit through an interface line, with frames arranged in a serial transfer form are detected by using a cyclic redundancy check (CRC). The dummy codes and attribute flags for the dummy codes are not used in this checking. The re-transmission of signals in the frame resulting from a CRC error generated by the attribute flag for the dummy code changing to that of a control signal in the frame is avoided by: (1) providing, at the transmitting circuit, flags for determining the existence and the number of the control signal in the frame in front of the succeeding frame, and (2) comparing signals, relating to the flags, detected in the receiving circuit with the flags.
摘要翻译： PCT No.PCT / JP88 / 00508 Sec。 371日期：1988年7月14日 102（e）日期1988年7月14日PCT提交1988年5月26日PCT公布。第WO88 / 09590号公报日期为1988年12月1日。信息信号（每个包括控制信号）中的错误，用于信息信号的虚拟代码和属性标志以及通过接口线从发送电路传送到接收电路的虚拟代码，通过使用循环冗余校验（CRC）来检测串行传输形式。虚拟代码的虚拟代码和属性标志不用于此检查。通过以下方式避免由帧中的控制信号改变为虚拟码的属性标志产生的由CRC错误产生的帧中的信号的重新传输：（1）在发射电路处提供用于确定的标志在后续帧前面的帧中的控制信号的存在和数量，以及（2）将在接收电路中检测到的与标志相关的信号与标志进行比较。

9. 发明授权

US4437883A Process for producing metal powder 失效
标题翻译：金属粉末生产工艺
公开(公告)号：US4437883A
公开(公告)日：1984-03-20
申请号：US466317
申请日：1983-02-14
申请人： Toshihiko Kubo , Minoru Ichidate , Toshiyuki Kawai , Sadao Yonehara , Yoshihisa Koiwai , Kazuhiko Endo
发明人： Toshihiko Kubo , Minoru Ichidate , Toshiyuki Kawai , Sadao Yonehara , Yoshihisa Koiwai , Kazuhiko Endo
IPC分类号： B22F9/08
CPC分类号： B22F9/082 , B22F2009/0824 , B22F2009/0864
摘要： Metal powder having low oxygen and carbon contents and suitable for powder metallurgy may be obtained by using, as an atomizing medium, a special composition containing an alcohol having 1-4 carbon atoms and water as its essential components when impinging the atomizing medium against a molten metal in a state isolated from the ambient air to produce the metal powder.
摘要翻译：具有低氧和碳含量低，适用于粉末冶金的金属粉末可以通过在将雾化介质撞击熔融物时使用含有1-4个碳原子的醇和水作为其主要成分的特殊组合物作为雾化介质来获得金属处于与环境空气隔离的状态以产生金属粉末。

10. 发明授权

US08399879B2 Nano-wire field effect transistor, method for manufacturing the transistor, and integrated circuit including the transistor 有权
标题翻译：纳米线场效应晶体管，晶体管的制造方法以及包括晶体管的集成电路
公开(公告)号：US08399879B2
公开(公告)日：2013-03-19
申请号：US12993880
申请日：2009-06-05
申请人： Yongxun Liu , Takashi Matsukawa , Kazuhiko Endo , Shinichi Ouchi , Kunihiro Sakamoto , Meishoku Masahara
发明人： Yongxun Liu , Takashi Matsukawa , Kazuhiko Endo , Shinichi Ouchi , Kunihiro Sakamoto , Meishoku Masahara
IPC分类号： H01L29/06 , H01L31/072 , H01L31/019 , H01L31/0328 , H01L31/0336
CPC分类号： H01L29/0665 , B82Y10/00 , H01L29/045 , H01L29/0673 , H01L29/42392 , H01L29/78696
摘要： Provided is a method for fabricating a nano-wire field effect transistor including steps of: preparing an SOI substrate having a (100) surface orientation, and nano-wire field effect transistor where two triangular columnar members configuring the nano-wires and being made of a silicon crystal layer are arranged one above the other on an SOI substrate having a (100) surface such a way that the ridge lines of the triangular columnar members face via an insulator; processing the silicon crystal configuring the SOI substrate into a standing plate-shaped member having a rectangular cross-section; and as a nanowire, processing the silicon crystal by orientation dependent wet etching into a shape where two triangular columnar members are arranged one above the other in such a way that the ridge lines of the triangular columnar members configuring the nano-wires face through the ridge lines thereof, and an integrated circuit including the nano-wire field effect transistor.
摘要翻译：提供一种制造纳米线场效应晶体管的方法，包括以下步骤：制备具有（100）表面取向的SOI衬底和纳米线场效应晶体管，其中构成纳米线的两个三角柱形构件由在具有（100）表面的SOI衬底上，使三角柱状构件的棱线经由绝缘体面对，从而将硅晶体层彼此重叠地布置; 将构成SOI衬底的硅晶体加工成具有矩形横截面的立式板状构件; 并且作为纳米线，通过取向相关的湿法蚀刻将硅晶体加工成两个三角柱形部件一个在另一个上方布置的形状，使得构成纳米线的三角柱形部件的脊线面向通过脊线，以及包括纳米线场效应晶体管的集成电路。

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