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21. 发明申请

US20050028724A1 Acentric lithium borate crystals, method for making, and applications thereof 有权
标题翻译：硼酸锂晶体，制备方法及其应用
公开(公告)号：US20050028724A1
公开(公告)日：2005-02-10
申请号：US10888049
申请日：2004-07-09
申请人： Joseph Kolis
发明人： Joseph Kolis
IPC分类号： C30B7/00 , C30B29/10 , C30B1/00 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： C30B7/00 , C30B29/10 , Y10T428/2982
摘要： Acentric, tetragonal lithium borate crystals are disclosed along with a hydrothermal method for forming such crystals. The crystals possess unique optical, non-linear optical, and other photonic properties and may be formed of sufficient size to be useful in a wide variety of photonic devices. In addition, the disclosed crystals are very hard and can be used in specialty grinding applications such as for grinding optical components for deep UV applications.
摘要翻译：公开了三角形硼酸锂晶体以及用于形成这种晶体的水热法。晶体具有独特的光学，非线性光学和其他光子性质，并且可以形成为足够的尺寸以用于各种各样的光子器件。此外，所公开的晶体非常硬，并且可用于特殊研磨应用中，例如用于研磨用于深UV应用的光学部件。

22. 发明授权

US06846359B2 Epitaxial CoSi2 on MOS devices 失效
标题翻译：外延CoSi2在MOS器件上
公开(公告)号：US06846359B2
公开(公告)日：2005-01-25
申请号：US10280668
申请日：2002-10-25
申请人： Chong Wee Lim , Chan Soo Shin , Ivan Georgiev Petrov , Joseph E. Greene
发明人： Chong Wee Lim , Chan Soo Shin , Ivan Georgiev Petrov , Joseph E. Greene
IPC分类号： C30B1/00 , C30B25/02 , G30B25/04
CPC分类号： C30B1/00 , C30B25/02 , C30B29/10
摘要： An SixNy or SiOxNy liner is formed on a MOS device. Cobalt is then deposited and reacts to form an epitaxial CoSi2 layer underneath the liner. The CoSi2 layer may be formed through a solid phase epitaxy or reactive deposition epitaxy salicide process. In addition to high quality epitaxial CoSi2 layers, the liner formed during the invention can protect device portions during etching processes used to form device contacts. The liner can act as an etch stop layer to prevent excessive removal of the shallow trench isolation, and protect against excessive loss of the CoSi2 layer.
摘要翻译：在MOS器件上形成SixNy或SiOxNy衬垫。然后沉积钴并且反应以在衬垫下方形成外延CoSi 2层。可以通过固相外延或反应性沉积外延自对准硅化物工艺形成CoSi 2层。除了高质量的外延CoSi2层之外，本发明中形成的衬垫还可以在用于形成器件触点的蚀刻工艺期间保护器件部分。衬里可以用作蚀刻停止层，以防止浅沟槽隔离物的过度去除，并且防止CoSi2层的过度损耗。

23. 发明申请

US20040079279A1 Epitaxial CoSi2 on MOS devices 失效
标题翻译：外延CoSi2在MOS器件上
公开(公告)号：US20040079279A1
公开(公告)日：2004-04-29
申请号：US10280668
申请日：2002-10-25
申请人： The Board of Trustees of the University of Illinois
发明人： Chong Wee Lim , Chan Soo Shin , Ivan Georgiev Petrov , Joseph E. Greene
IPC分类号： C30B023/00 , C30B025/00 , C30B028/12 , C30B028/14
CPC分类号： C30B1/00 , C30B25/02 , C30B29/10
摘要： An SixNy or SiOxNy liner is formed on a MOS device. Cobalt is then deposited and reacts to form an epitaxial CoSi2 layer underneath the liner. The CoSi2 layer may be formed through a solid phase epitaxy or reactive deposition epitaxy salicide process. In addition to high quality epitaxial CoSi2 layers, the liner formed during the invention can protect device portions during etching processes used to form device contacts. The liner can act as an etch stop layer to prevent excessive removal of the shallow trench isolation, and protect against excessive loss of the CoSi2 layer.
摘要翻译：在MOS器件上形成SixNy或SiOxNy衬垫。然后沉积钴并且反应以在衬垫下方形成外延CoSi 2层。可以通过固相外延或反应性沉积外延自对准硅化物工艺形成CoSi 2层。除了高质量的外延CoSi2层之外，本发明中形成的衬垫还可以在用于形成器件触点的蚀刻工艺期间保护器件部分。衬里可以用作蚀刻停止层，以防止浅沟槽隔离物的过度去除，并且防止CoSi2层的过度损耗。

24. 发明授权

US06248167B1 Method for single crystal growth and growth apparatus 有权
标题翻译：单晶生长和生长装置的方法
公开(公告)号：US06248167B1
公开(公告)日：2001-06-19
申请号：US09238901
申请日：1999-01-28
申请人： Tsutomu Okamoto , Koichi Tatsuki , Shigeo Kubota
发明人： Tsutomu Okamoto , Koichi Tatsuki , Shigeo Kubota
IPC分类号： C30B708
CPC分类号： C30B15/00 , C30B29/10
摘要： Disclosed is a method for the growth of a single crystal having excellent crystallinity, uniform quality in the inside thereof and hence excellently uniform optical properties, the method enabling an improvement in yields. The invention resides in a method for the growth of a single crystal of &bgr;-type barium borate (&bgr;-BaB2O4), the method comprising heating a crucible 6 indirectly to grow a &bgr;-BaB2O4 single crystal 21 from a melt of barium borate (BaB2O4) contained in the crucible and using no flux by using a seed crystal 9 of &bgr;-BaB2O4.
摘要翻译：公开了一种生长具有优异结晶性，在其内部质量均匀且因此具有优异均匀的光学性能的单晶的方法，该方法能够提高产量。本发明涉及一种用于生长β型硼酸钡（β-BaB 2 O 4）的单晶的方法，该方法包括间接加热坩埚6以从硼酸钡（BaB 2 O 4）的熔体中生长β-BaB 2 O 4单晶21 ），并且通过使用β-BaB 2 O 4的晶种9不使用助熔剂。

25. 发明授权

US06022410A Alkaline-earth metal silicides on silicon 失效
标题翻译：硅上的碱土金属硅化物
公开(公告)号：US06022410A
公开(公告)日：2000-02-08
申请号：US144921
申请日：1998-09-01
申请人： Zhiyi Yu , Jun Wang , Ravindranath Droopad , Daniel S. Marshall , Jerald A. Hallmark , Jonathan K. Abrokwah
发明人： Zhiyi Yu , Jun Wang , Ravindranath Droopad , Daniel S. Marshall , Jerald A. Hallmark , Jonathan K. Abrokwah
IPC分类号： H01L21/203 , C30B23/02 , C30B29/10 , C30B23/00
CPC分类号： C30B23/02 , C30B29/10
摘要： A method of forming a thin silicide layer on a silicon substrate 12 including heating the surface of the substrate to a temperature of approximately 500.degree. C. to 750.degree. C. and directing an atomic beam of silicon 18 and an atomic beam of an alkaline-earth metal 20 at the heated surface of the substrate in a molecular beam epitaxy chamber at a pressure in a range below 10.sup.-9 Torr. The silicon to alkaline-earth metal flux ratio is kept constant (e.g. Si/Ba flux ratio is kept at approximately 2:1) so as to form a thin alkaline-earth metal silicide layer (e.g. BaSi.sub.2) on the surface of the substrate. The thickness is determined by monitoring in situ the surface of the single crystal silicide layer with RHEED and terminating the atomic beam when the silicide layer is a selected submonolayer to one monolayer thick.
摘要翻译：一种在硅衬底12上形成薄硅化物层的方法，包括将衬底的表面加热至约500℃至750℃的温度，并引导硅18的原子束和碱性电子束的原子束，在分子束外延室中的衬底的加热表面处的压力在10-9乇以下的地球金属20。将硅与碱土金属的通量比保持恒定（例如，Si / Ba通量比保持在约2:1），以在衬底的表面上形成薄的碱土金属硅化物层（例如BaSi 2）。通过用RHEED原位监测单晶硅化物层的表面并且当硅化物层是选择的亚单层至一个单层厚度时终止原子束来确定厚度。

26. 发明授权

US5853691A Silver halides of altered crystal habit or morphology and methods for producing same 失效
标题翻译：改变晶体习惯或形态的银卤化物及其制造方法
公开(公告)号：US5853691A
公开(公告)日：1998-12-29
申请号：US695784
申请日：1996-08-12
申请人： Kenneth M. Doxsee
发明人： Kenneth M. Doxsee
IPC分类号： B01D9/02 , B01D9/00 , B82B1/00 , C01F11/18 , C01G5/02 , C09K3/00 , C30B7/00 , G03C1/015 , G03C1/035 , C01B9/00
CPC分类号： B01D9/00 , B82Y10/00 , B82Y30/00 , C01F11/183 , C01F11/184 , C01G5/02 , C30B29/10 , C30B7/00 , G03C1/015 , G03C1/035
摘要： Methods are disclosed in which first and second reactant salts and a complexing agent are added to a non-aqueous reaction solvent in which the complexing agent is soluble. The complexing agent is a crown ether or other cyclic or acyclic polydentate chelating agent that, in the reaction solvent, forms chelation complexes with at least one of the reactant salts. The reactant salts, which are substantially soluble and reactive with each other in water to form a first crystallite of silver halide, are present in the reaction solvent in relative amounts that are sufficient to form a desired amount of the silver halide in the reaction solvent. Reaction of the first and second reactant salts in the reaction solvent forms a second crystallite precipitate comprising crystals of silver halide having a different habit or morphology from silver halide crystals in the first crystallite that would otherwise be formable in water by reaction of similar amounts of the first and second reactant salts.
摘要翻译：公开了将第一和第二反应物盐和络合剂加入其中络合剂可溶的非水反应溶剂中的方法。络合剂是冠醚或其它环状或无环多齿螯合剂，其在反应溶剂中与至少一种反应物盐形成螯合配合物。基本上可溶于水的反应物盐形成卤化银的第一晶体的反应物盐以相当的量存在于反应溶剂中，其量足以在反应溶剂中形成所需量的卤化银。第一和第二反应物盐在反应溶剂中的反应形成第二微晶沉淀，其包含具有不同习惯或形态的卤化银晶体，所述卤化银具有与第一微晶中卤化银晶体不同的习惯或形态，否则可能在水中形成水，通过相似量的第一和第二反应物盐。

27. 发明授权

US5411723A Process for reducing the damage susceptibility in optical quality crystals 失效
标题翻译：降低光学质量晶体的损伤敏感性的方法
公开(公告)号：US5411723A
公开(公告)日：1995-05-02
申请号：US123662
申请日：1993-09-22
申请人： Patricia A. Morris
发明人： Patricia A. Morris
IPC分类号： C30B29/22 , C30B33/00 , C01B25/26 , C01G28/02 , C30B31/00
CPC分类号： C30B33/00 , C30B29/10 , C30B29/14
摘要： A process is disclosed for treating a crystal of MTiOXO.sub.4 which has crystal structure deficiencies of M and O, wherein M is selected from the group consisting of K, Rb, Tl and NH.sub.4 and mixtures thereof and X is selected from the group consisting of P, As and mixtures thereof, which includes the step of heating said crystal in the presence of a mixture of MTiOXO.sub.4 and at least one inorganic compound of one or more monovalent cations selected from the group consisting of Rb+, K+, Cs+ and Ti+ (said inorganic compound(s) being selected to provide a source of vapor phase monovalent cation and being present in an amount sufficient to provide at least a 0.1 mole % excess of the monovalent cation in relation to the M in the MTiOXO.sub.4 in said mixture) at a temperature of from about 400.degree. C. to 950.degree. C. and a pressure of at least 14 psi, and in the presence of a gaseous source of oxygen for a time sufficient to decrease the optical damage susceptibility of said crystal.
摘要翻译：公开了一种处理具有M和O的晶体结构缺陷的MTiOXO4晶体的方法，其中M选自K，Rb，Tl和NH4及其混合物，X选自P， As及其混合物，其包括在MTiOXO4和选自Rb +，K +，Cs +和Ti +的一种或多种一价阳离子的至少一种无机化合物存在下加热所述晶体的步骤（所述无机化合物被选择为提供气相一价阳离子源，并且以足以在所述混合物中的MTiOXO4中相对于M提供至少0.1摩尔％过量的一价阳离子的量存在），温度为约400℃至950℃，压力至少为14psi，并且在气态氧气源的存在下，足以降低所述晶体的光学损伤敏感性的时间。

28. 发明授权

US5343827A Method for crystal growth of beta barium boratean 失效
标题翻译： β硼酸钡的晶体生长方法
公开(公告)号：US5343827A
公开(公告)日：1994-09-06
申请号：US838628
申请日：1992-02-19
申请人： Peter F. Bordui , George D. Calvert
发明人： Peter F. Bordui , George D. Calvert
IPC分类号： C30B9/12 , C30B9/00 , C30B29/22 , G02F1/35 , G02F1/355 , C30B7/08
CPC分类号： C30B9/00 , C30B29/10
摘要： A method of growing optical quality beta barium borate; crystals from a pure NaCl fluxed melt. The method comprises maintaining particular thermal field conditions throughout the melt and slowly cooling the melt to cause beta barium borate to crystallize from the melt. The rate of cooling may be at a rate of not greater than 3.degree. C. per day. The method may utilize a seed crystal, suspended into the melt, so that the beta barium borate may crystallize on the seed crystal.
摘要翻译：增加光学质量的硼酸钡钡的方法; 来自纯NaCl熔融熔体的晶体。该方法包括在整个熔体中保持特定的热场条件并缓慢冷却熔体以使β硼酸钡从熔体中结晶。冷却速度可以是每天不大于3℃的速率。该方法可以利用悬浮在熔体中的晶种，使得硼酸钡可以在晶种上结晶。

29. 发明授权

US5334365A Single cesium titanyl arsenate-type crystals, and their preparation 失效
标题翻译：单一铯钛酸氧钛酸盐型晶体及其制备方法
公开(公告)号：US5334365A
公开(公告)日：1994-08-02
申请号：US888945
申请日：1992-05-26
申请人： Lap K. Cheng
发明人： Lap K. Cheng
IPC分类号： G02F1/35 , C30B9/00 , C30B9/06 , C30B29/22 , G02F1/355 , C01B37/14
CPC分类号： C30B9/00 , C30B29/10 , C30B29/14
摘要： A flux process is disclosed for producing a single orthorhombic crystal of Cs.sub.1-x M.sub.x TiOAsO.sub.4 (where M is Na, K, Rb, and/or Tl and x is from 0 to 0.4) wherein the dimension of the crystal along each axis is at least about 2 mm, and wherein the product at the dimensions along the three axes is at least about 15 mm.sup.3. The process involves preparing a homogeneous melt containing the components for forming said crystal and a flux comprising oxides of Cs and As at a temperature no higher than the decomposition temperature of said orthorhombic crystal, the mole fraction of M relative to the total Cs+M in the melt being within the range of from 0 to about 0.2; introducing a seed crystal for said single crystal in the melt; activating the controlled crystallization on the seed crystal; and continuing the crystallization until formation of the single crystal is completed. Single crystals of Cs.sub.1-x M.sub.x TiOAsO.sub.4 (including crystals at least about 5 mm.times.5 mm 5 mm) are also disclosed.
摘要翻译：公开了用于制造Cs1-xMxTiOAsO4（其中M是Na，K，Rb和/或T1和x为0至0.4）的单斜晶体的焊剂工艺，其中沿着每个轴的晶体的尺寸至少约为 2mm，并且其中沿着三个轴线的尺寸的产品为至少约15mm 3。该方法包括制备含有用于形成所述晶体的组分的均匀熔体和包含Cs和As的氧化物的焊剂，其温度不高于所述正交晶体的分解温度，M相对于总Cs + M的摩尔分数熔体在0至约0.2的范围内; 在熔体中引入所述单晶的晶种; 激活晶种上的受控结晶; 并继续结晶，直到完成单晶的形成。还公开了Cs1-xMxTiOAsO4的单晶（包括至少约5mm×5mm×5mm的晶体）。

30. 发明授权

US5273617A Method of forming silicon structures with selectable optical characteristics 失效
标题翻译：形成具有可选光学特性的硅结构的方法
公开(公告)号：US5273617A
公开(公告)日：1993-12-28
申请号：US912961
申请日：1992-07-10
申请人： Robert W. Fathauer , Leo Schowalter
发明人： Robert W. Fathauer , Leo Schowalter
IPC分类号： C30B23/02
CPC分类号： C30B23/02 , C30B23/002 , C30B29/10 , Y10S117/918 , Y10S438/929
摘要： Silicon and metal are coevaporated onto a silicon substrate in a molecular beam epitaxy system with a larger than stoichiometric amount of silicon so as to epitaxially grow particles of metal silicide embedded in a matrix of single crystal epitaxially grown silicon. The particles interact with incident photons by resonant optical absorption at the surface plasmon resonance frequency. Controlling the substrate temperature and deposition rate and time allows the aspect ratio of the particles to be tailored to desired wavelength photons and polarizations. The plasmon energy may decay as excited charge carriers or phonons, either of which can be monitored to indicate the amount of incident radiation at the selected frequency and polarization.
摘要翻译：硅和金属在具有大于化学计量的硅的分子束外延系统中共蒸发到硅衬底上，以外延生长嵌入单晶外延生长硅的基体中的金属硅化物的颗粒。颗粒通过在表面等离子体共振频率处的共振光吸收与入射光子相互作用。控制衬底温度和沉积速率和时间允许颗粒的纵横比定制成所需的波长光子和极化。等离子体激元能量可以衰减为激发的电荷载体或声子，其中任一个可以被监测以指示所选频率和极化处的入射辐射的量。

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