专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US5334365A Single cesium titanyl arsenate-type crystals, and their preparation 失效
标题翻译：单一铯钛酸氧钛酸盐型晶体及其制备方法
公开(公告)号：US5334365A
公开(公告)日：1994-08-02
申请号：US888945
申请日：1992-05-26
申请人： Lap K. Cheng
发明人： Lap K. Cheng
IPC分类号： G02F1/35 , C30B9/00 , C30B9/06 , C30B29/22 , G02F1/355 , C01B37/14
CPC分类号： C30B9/00 , C30B29/10 , C30B29/14
摘要： A flux process is disclosed for producing a single orthorhombic crystal of Cs.sub.1-x M.sub.x TiOAsO.sub.4 (where M is Na, K, Rb, and/or Tl and x is from 0 to 0.4) wherein the dimension of the crystal along each axis is at least about 2 mm, and wherein the product at the dimensions along the three axes is at least about 15 mm.sup.3. The process involves preparing a homogeneous melt containing the components for forming said crystal and a flux comprising oxides of Cs and As at a temperature no higher than the decomposition temperature of said orthorhombic crystal, the mole fraction of M relative to the total Cs+M in the melt being within the range of from 0 to about 0.2; introducing a seed crystal for said single crystal in the melt; activating the controlled crystallization on the seed crystal; and continuing the crystallization until formation of the single crystal is completed. Single crystals of Cs.sub.1-x M.sub.x TiOAsO.sub.4 (including crystals at least about 5 mm.times.5 mm 5 mm) are also disclosed.
摘要翻译：公开了用于制造Cs1-xMxTiOAsO4（其中M是Na，K，Rb和/或T1和x为0至0.4）的单斜晶体的焊剂工艺，其中沿着每个轴的晶体的尺寸至少约为 2mm，并且其中沿着三个轴线的尺寸的产品为至少约15mm 3。该方法包括制备含有用于形成所述晶体的组分的均匀熔体和包含Cs和As的氧化物的焊剂，其温度不高于所述正交晶体的分解温度，M相对于总Cs + M的摩尔分数熔体在0至约0.2的范围内; 在熔体中引入所述单晶的晶种; 激活晶种上的受控结晶; 并继续结晶，直到完成单晶的形成。还公开了Cs1-xMxTiOAsO4的单晶（包括至少约5mm×5mm×5mm的晶体）。

IPRDB

热门服务

关于我们

友情链接

联系方式