专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US06413876B1 Method for plasma processing high-speed semiconductor circuits with increased yield 失效
标题翻译：用于等离子体处理具有增加的产量的高速半导体电路的方法
公开(公告)号：US06413876B1
公开(公告)日：2002-07-02
申请号：US09797571
申请日：2001-03-05
申请人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
发明人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
IPC分类号： H01L21302
CPC分类号： H01J37/32706
摘要： A plasma processing apparatus processes high-speed semiconductor circuits by using plasma with an increased yield. The plasma processing apparatus has a vacuum vessel including an exhaust device, a starting material gas supplying device, an electrode for installing a workpiece (wafer) and a device for applying radio frequency power to the wafer. This apparatus converts the starting material gas to plasma inside the vacuum vessel and plasma-processes a wafer surface, wherein an insulating film is interposed between the electrode for installing the wafer and the wafer and has a conductive material at a part thereof, and the conductive material is electrically grounded through an impedance regulating circuit.
摘要翻译：等离子体处理装置通过使用具有增加的产量的等离子体来处理高速半导体电路。等离子体处理装置具有包括排气装置，原料气体供给装置，用于安装工件的电极（晶片）和用于向晶片施加射频功率的装置的真空容器。该装置将原料气体转化为真空容器内的等离子体，对晶片表面进行等离子体处理，其中绝缘膜插入在用于安装晶片的电极和晶片之间，并且其一部分具有导电材料，并且导电材料通过阻抗调节电路电接地。

22. 发明授权

US06867144B2 Apparatus and method for plasma processing high-speed semiconductor circuits with increased yield 失效
标题翻译：用于等离子体处理高速半导体电路的装置和方法，其产量增加
公开(公告)号：US06867144B2
公开(公告)日：2005-03-15
申请号：US10138635
申请日：2002-05-06
申请人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
发明人： Yutaka Ohmoto , Hironobu Kawahara , Ken Yoshioka , Kazue Takahashi , Saburou Kanai
IPC分类号： H01L21/3065 , H01J37/32 , H01L21/302
CPC分类号： H01J37/32706
摘要： A plasma etching method of a wafer includes the steps of electrostatically attracting the wafer which has a gate oxide film onto a wafer mounting electrode in a vacuum processing chamber, introducing a mixed gas into the vacuum processing chamber on the basis of an etching recipe, generating a magnetic field inside the vacuum processing chamber, generating a plasma in the vacuum processing chamber, applying a bias power to the wafer to accelerate ions in the plasma toward the wafer, and setting an impedance of a portion of the wafer mounting electrode which corresponds to an outer periphery of the wafer as viewed from a bias power supply to a value which is greater than that of a center portion of the wafer mounting electrode using an electrode arranged within the wafer mounting electrode at a position corresponding to the outer periphery of the wafer and formed under an insulating film for electrostatically attracting the wafer.
摘要翻译：晶片的等离子体蚀刻方法包括以下步骤：将具有栅极氧化膜的晶片静电吸引到真空处理室中的晶片安装电极上，基于蚀刻配方将混合气体引入真空处理室，产生真空处理室内部的磁场，在真空处理室内产生等离子体，向晶片施加偏置功率，将等离子体中的离子加速朝向晶片，将晶片安装电极的一部分的阻抗设定为对应于从晶片安装电极的晶片安装电极的对应于晶片外周的位置的晶片安装电极的晶片安装电极的中心部分的角度看，晶片的外周是从偏压电源观察到的值并形成在用于静电吸引晶片的绝缘膜下。

23. 发明授权

US08940128B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08940128B2
公开(公告)日：2015-01-27
申请号：US12853427
申请日：2010-08-10
申请人： Yusaku Sakka , Ryoji Nishio , Ken Yoshioka
发明人： Yusaku Sakka , Ryoji Nishio , Ken Yoshioka
IPC分类号： C23C16/505 , H01J37/32 , C23C16/507 , H05H1/46 , H05H1/36
CPC分类号： H05H1/46 , H01J37/321 , H01J37/3211 , H01J37/32651 , H05H2001/463
摘要： The invention aims at suppressing the self bias generated at the surface of the inner wall of the vacuum processing chamber, to thereby suppress the chipping of the inner wall surface of the vacuum processing chamber or the consumption of the inner parts of the vacuum processing chamber. The present invention provides a plasma processing apparatus comprising a vacuum processing chamber, a vacuum processing chamber lid sealing an upper portion of the vacuum processing chamber, an induction antenna, a Faraday shield disposed between the induction antenna and the vacuum processing chamber lid, and a high frequency power supply for supplying high frequency power to the induction antenna, wherein the induction antenna is divided into two or more parts, the Faraday shield is divided into a division number corresponding to the division number of the induction antenna, and high frequency voltages are applied thereto via a matching box from the one high frequency power supply.
摘要翻译：本发明旨在抑制在真空处理室的内壁表面产生的自偏压，从而抑制真空处理室的内壁表面的碎裂或真空处理室的内部部分的消耗。本发明提供一种等离子体处理装置，其包括真空处理室，密封真空处理室的上部的真空处理室盖，感应天线，设置在感应天线和真空处理室盖之间的法拉第屏蔽，以及用于向感应天线提供高频电力的高频电源，其中感应天线被分成两部分或更多部分，法拉第屏蔽被分成对应于感应天线的分割数的分频数，高频电压是通过匹配盒从一个高频电源施加到其上。

24. 发明申请

US20100263796A1 Plasma Processing Apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US20100263796A1
公开(公告)日：2010-10-21
申请号：US12783686
申请日：2010-05-20
申请人： Manabu Edamura , Go Miya , Ken Yoshioka
发明人： Manabu Edamura , Go Miya , Ken Yoshioka
IPC分类号： H01L21/465 , C23F1/08 , C23C16/00
CPC分类号： H01J37/321
摘要： A plasma processing apparatus includes a processing chamber, a sample stage for mounting an object to be processed, a power supply, and at least one induction coil connected to the power supply. The induction coil is formed by connecting at least two identical coil elements in a parallel circuit-like arrangement so that current flows in each of the plurality of identical coil elements in a same direction when viewed from the sample stage. The induction coil is positioned so that a center thereof corresponds to a center of the object, and input ends of the coil elements are displaced circumferentially at equal angular intervals calculated by dividing 360° by the number of identical coil elements.
摘要翻译：等离子体处理装置包括处理室，用于安装待加工物体的样品台，电源以及连接到电源的至少一个感应线圈。感应线圈通过以并联电路状布置连接至少两个相同的线圈元件而形成，使得当从样品台观察时，电流以相同的方向在多个相同的线圈元件中的每一个中流动。感应线圈被定位成使得其中心对应于物体的中心，并且线圈元件的输入端部以相等的角度间隔沿圆周方向移位，其通过将360°除以相同线圈元件的数量而计算。

25. 发明授权

US07347656B2 Vacuum processing apparatus and semiconductor manufacturing line using the same 有权
标题翻译：真空处理装置和使用其的半导体制造线
公开(公告)号：US07347656B2
公开(公告)日：2008-03-25
申请号：US11074719
申请日：2005-03-09
申请人： Minoru Soraoka , Ken Yoshioka , Yoshinao Kawasaki
发明人： Minoru Soraoka , Ken Yoshioka , Yoshinao Kawasaki
IPC分类号： H01L21/677
CPC分类号： H01L21/67161 , H01L21/67167 , H01L21/67173 , H01L21/6719 , H01L21/67196 , H01L21/67727 , H01L21/67778 , Y10S134/902 , Y10S414/135 , Y10S414/137 , Y10S414/139 , Y10S414/14 , Y10T70/5801 , Y10T70/5805
摘要： A vacuum processing apparatus is composed of a cassette block and a vacuum processing block. The cassette block has a cassette table for mounting a plurality of cassettes containing a sample and an atmospheric transfer means. The vacuum processing block has a plurality of processing chambers for performing vacuum processing to the sample and a vacuum transfer means for transferring the sample. Both of the plan views of the cassette block and the vacuum processing block are nearly rectangular, and the width of the cassette block is designed larger than the width of the vacuum processing block, and the plan view of the vacuum processing apparatus is formed in an L-shape or a T-shape.
摘要翻译：真空处理装置由盒式磁带和真空处理块构成。盒式磁带具有用于安装包含样品和大气传送装置的多个盒的盒式台。真空处理块具有用于对样品进行真空处理的多个处理室和用于转移样品的真空转印装置。磁带盒和真空处理块的平面图都是近似矩形的，并且盒体的宽度被设计成大于真空处理块的宽度，真空处理装置的平面图形成为 L形或T形。

26. 发明申请

US20070184563A1 APPARATUS AND METHOD FOR PLASMA ETCHING 失效
标题翻译：用于等离子体蚀刻的装置和方法
公开(公告)号：US20070184563A1
公开(公告)日：2007-08-09
申请号：US11735657
申请日：2007-04-16
申请人： Go Miya , Manabu Edamura , Ken Yoshioka , Ryoji Nishio
发明人： Go Miya , Manabu Edamura , Ken Yoshioka , Ryoji Nishio
IPC分类号： H01L21/00 , H01L21/302 , H01L21/306
CPC分类号： H01J37/32449 , H01J37/3244 , H01L21/67017 , H01L21/67069
摘要： A plasma etching method for a plasma etching apparatus including: a processing chamber for performing plasma etching on an object to be processed; a first gas supply source; a second gas supply source; a first gas inlet for introducing a processing gas into the processing chamber; a second gas inlet for introducing a processing gas into the processing chamber; a flow rate regulator for regulating the flow rate of the processing gas; and a gas shunt for dividing the first processing gas into a plurality of portions, wherein the second processing gas is merged with at least one part between the gas shunt and the first gas inlet and between the gas shunt and the second gas inlet.
摘要翻译：一种用于等离子体蚀刻装置的等离子体蚀刻方法，包括：处理室，用于对被处理物体进行等离子体蚀刻; 第一气体供应源; 第二气体供应源; 用于将处理气体引入处理室的第一气体入口; 用于将处理气体引入所述处理室的第二气体入口; 用于调节处理气体的流量的流量调节器; 以及用于将所述第一处理气体分成多个部分的气体分流器，其中所述第二处理气体与所述气体分流器和所述第一气体入口之间以及所述气体分流器和所述第二气体入口之间的至少一部分合并。

27. 发明申请

US20060032585A1 Plasma processing method and apparatus 审中-公开
标题翻译：等离子体处理方法和装置
公开(公告)号：US20060032585A1
公开(公告)日：2006-02-16
申请号：US11198182
申请日：2005-08-08
申请人： Yoshitaka Kai , Ken Yoshioka , Tadamitsu Kanekiyo , Takeshi Shimada
发明人： Yoshitaka Kai , Ken Yoshioka , Tadamitsu Kanekiyo , Takeshi Shimada
IPC分类号： C23F1/00 , H01L21/306
CPC分类号： H01L21/31122 , H01L21/31116
摘要： A high-dielectric-constant gate insulating film 32 such as HfO2 is etched with gas plasma using gas selected from Ar gas, He gas, Ar+He mixed gas, and mixed gases formed by mixing CH4 with the preceding gases while maintaining a temperature of 40° C. or higher, thus ensuring high etching selective ratio between a HfO2 film 32 and a Poly-Si layer 33, a substrate Si layer 31 and a SiO2 mask 34, reducing the amount of loss of the substrate Si layer 31 and side etching of side walls of the Poly-Si gate portion 33 during plasma etching of HfO2.
摘要翻译：使用选自Ar气体，He气体，Ar + He混合气体的气体和通过混合CH形成的混合气体，用气体等离子体蚀刻诸如HfO 2的高介电常数栅极绝缘膜32，在保持40℃或更高温度的同时保持高的蚀刻选择比，从而确保HfO 2膜32和多晶硅层33之间的高蚀刻选择比，衬底Si层31和SiO 2掩模34，在HfO 3的等离子体蚀刻期间减少衬底Si层31的损耗量和多晶硅栅极部分33的侧壁的侧蚀刻， SUB> 2 。

28. 发明申请

US20050224182A1 Plasma processing apparatus 审中-公开
标题翻译：等离子体处理装置
公开(公告)号：US20050224182A1
公开(公告)日：2005-10-13
申请号：US10921341
申请日：2004-08-19
申请人： Manabu Edamura , Go Miya , Ken Yoshioka
发明人： Manabu Edamura , Go Miya , Ken Yoshioka
IPC分类号： H05H1/46 , C23F1/00 , H01J37/32 , H01L21/205 , H01L21/3065
CPC分类号： H01J37/321
摘要： The invention provides an inductively coupled plasma apparatus capable of disposing a parallel coil with a large number of total turns in a relatively small space. The present plasma processing apparatus comprises a processing chamber for subjecting an object to plasma processing, an inlet means for introducing a processing gas into the processing chamber, an evacuation means for evacuating an interior of the processing chamber, a sample stage for placing the object, a power supply means for generating plasma, and at least one induction coil connected to the power supply means, wherein the induction coil is formed by connecting a plurality of identical coil elements 101 in a parallel circuit-like arrangement, the induction coil being positioned so that its center corresponds to a center of the object, and wherein input ends 101 in of the coil elements 101 are arranged at equal angular intervals calculated by dividing 360° by the number of coil elements, the coil elements having a three-dimensional structure in a radial direction and a height direction along a surface of an annular ring with an arbitrary cross-sectional shape.
摘要翻译：本发明提供一种电感耦合等离子体装置，其能够在相对较小的空间中设置具有大量总匝数的平行线圈。本等离子体处理装置包括用于对物体进行等离子体处理的处理室，用于将处理气体引入处理室的入口装置，用于抽出处理室内部的抽空装置，用于放置物体的样品台，用于产生等离子体的电源装置和连接到电源装置的至少一个感应线圈，其中感应线圈通过以并联电路状布置连接多个相同的线圈元件101而形成，感应线圈定位成其中心对应于物体的中心，并且其中线圈元件101中的输入端101a以360度乘以线圈元件的数量计算的等角度间隔布置，线圈元件具有三维结构沿着具有任意横截面形状的环形环的表面的径向方向和高度方向。

29. 发明授权

US06837005B2 Weatherstrip for automobile 失效
标题翻译：汽车挡风玻璃
公开(公告)号：US06837005B2
公开(公告)日：2005-01-04
申请号：US10233716
申请日：2002-09-03
申请人： Mithuaki Arata , Hitoshi Hamanaka , Ken Yoshioka , Kazuhiko Tokutomi
发明人： Mithuaki Arata , Hitoshi Hamanaka , Ken Yoshioka , Kazuhiko Tokutomi
IPC分类号： B60J10/00 , B60J10/04 , E05D15/16 , B60J1/16 , E06B7/16
CPC分类号： B60J10/75 , B60J10/16 , B60J10/265 , B60J10/33
摘要： A weatherstrip for an automobile includes an attaching portion having an inverse U-shape cross section. A rising portion is formed in a protruding manner on the attaching portion and lip pieces are formed for sealing between a door inner panel and a window glass. The rising portion includes a sloping guide that leads to a concave groove with which the trim end of a trim is fitted and latched. To attach the weatherstrip to the upper edge of an inner panel of a door beltline, the attaching portion is attached to the flange by insertion. Then the trim end of the trim is pressed against the guide and is, thrust so as to be fitted and latched with the concave groove. Since the trim end need not climb over the flange while keeping a weatherstrip attached thereto, even if the angle created by the door beltline and a pillar is an acute angle, the creation of a large gap between the weatherstrip end and the pillar is eliminated.

30. 发明授权

US06646233B2 Wafer stage for wafer processing apparatus and wafer processing method 失效
标题翻译：晶圆处理装置的晶片台和晶圆加工方法
公开(公告)号：US06646233B2
公开(公告)日：2003-11-11
申请号：US10087747
申请日：2002-03-05
申请人： Seiichiro Kanno , Ken Yoshioka , Ryoji Nishio , Saburou Kanai , Hideki Kihara , Koji Okuda
发明人： Seiichiro Kanno , Ken Yoshioka , Ryoji Nishio , Saburou Kanai , Hideki Kihara , Koji Okuda
IPC分类号： F27B514
CPC分类号： H01L21/67109 , H01L21/6831
摘要： A wafer stage for use in wafer processing apparatus which comprises a liquid cooling jacket with a built-in coolant liquid circulation path and a ceramic plate that is attached onto the liquid cooling jacket and has therein a heater and an electrode for electrostatic chuck use, the wafer stage performing wafer processing while letting a wafer be mounted on the ceramic plate, wherein the liquid cooling jacket permits attachment of the ceramic plate through a coolant gas circulating gap as formed over the liquid cooling jacket while disposing between the liquid cooling jacket and the ceramic plate more than one heat resistant seal material containing therein an elastic body for sealing the coolant gas.
摘要翻译：用于晶片处理装置的晶片台，其包括具有内置冷却剂液体循环路径的液体冷却套和附接到液体冷却套上的陶瓷板，并且其中具有用于静电卡盘的加热器和电极，在将晶片安装在陶瓷板上的同时进行晶片处理的晶片台，其中液体冷却套管允许通过在液体冷却套上形成的冷却剂气体循环间隙来连接陶瓷板，同时设置在液体冷却套和陶瓷之间在其上容纳多个耐热密封材料，其中包含用于密封冷却剂气体的弹性体。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式